KR100379503B1 - Method for forming oxide layer - Google Patents

Method for forming oxide layer Download PDF

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KR100379503B1
KR100379503B1 KR1019950046863A KR19950046863A KR100379503B1 KR 100379503 B1 KR100379503 B1 KR 100379503B1 KR 1019950046863 A KR1019950046863 A KR 1019950046863A KR 19950046863 A KR19950046863 A KR 19950046863A KR 100379503 B1 KR100379503 B1 KR 100379503B1
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oxygen
oxide film
field region
semiconductor substrate
silicon
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KR1019950046863A
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Korean (ko)
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KR970052900A (en
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정인철
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주식회사 하이닉스반도체
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Element Separation (AREA)
  • Local Oxidation Of Silicon (AREA)

Abstract

PURPOSE: A method for forming an oxide layer is provided to be capable of minimizing the use of oxygen gas when carrying out an ion implantation and flatly forming the oxide layer by carrying out an annealing process using nitrogen alone. CONSTITUTION: An oxide layer(12) and a photoresist layer(13) are sequentially deposited on a semiconductor substrate(11). A photoresist pattern is formed by selectively etching the photoresist layer for defining a field region. An ion implantation is carried out on the field region by implanting oxygen and silicon ions into the surface of the semiconductor substrate. An isolation layer(14) is formed on the field region implanted with oxygen and silicon ions by carrying out an annealing process on the resultant structure under nitrogen gas atmosphere. Preferably, the implanting energy of oxygen and silicon ions is in the range of 100-150 KeV.

Description

산화막 형성방법Oxide Formation Method

본 발명은 반도체 소자 제조방법에 관한 것으로 특히, 두꺼운 산화막 형성에 적당하도록 한 산화막 형성방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device, and more particularly to a method of forming an oxide film suitable for forming a thick oxide film.

일반적으로 반도체 소자의 격리방법에 있어서는 활성영역과 필드영역을 정의하여 필드영역에만 필드 산화막을 형성시키는 국부산화(LOCOS : Local Oxidation of Silicon) 공정으로 이루어진다.In general, a method of isolating a semiconductor device includes a local oxidation of silicon (LOCOS) process in which an active region and a field region are defined to form a field oxide layer only in the field region.

이하, 첨부도면을 참조하여 종래의 산화막 형성방법을 설명하면 다음과 같다.Hereinafter, a conventional oxide film forming method will be described with reference to the accompanying drawings.

첨부도면 제 1 도 (a)∼(c)는 종래의 산화막 형성방법을 나타낸 공정단면도이다.1 (a) to (c) are process cross-sectional views showing a conventional oxide film forming method.

종래의 산화막 형성방법은 제 1 도 (a)에 도시한 바와 같이, 반도체 기판(1)상에 산화막(2), 질화막(3)을 차례로 증착한 후 상기 질화막(3)상에 감광막(4)을 도포한다. 이어서 활성영역과 필드영역을 정의하고 상기 감광막(4)을 마스크로 이용하여 제 1 도 (b)에 도시한 바와 같이, 필드영역의 질화막(3)을 선택적으로 제거한 후, 상기 필드영역에 필드이온을 주입하고 열처리 하여 제 1 도 (c)에 도시한 바와 같이, 필드 산화막(5)을 형성한다.In the conventional oxide film forming method, as shown in FIG. 1A, an oxide film 2 and a nitride film 3 are sequentially deposited on a semiconductor substrate 1, and then the photoresist film 4 is formed on the nitride film 3. Apply. Subsequently, an active region and a field region are defined and the nitride film 3 of the field region is selectively removed as shown in FIG. Is injected and heat treated to form the field oxide film 5, as shown in FIG.

그러나 상기와 같은 종래의 산화막 형성방법은 필드 산화막 성장시 발생하는 버즈-빅(Bird's Beak) 현상으로 인해 활성영역(소자영역)의 면적이 감소하여 집적도가 저하되고, 산화막의 형상이 반도체 기판위로 돌출되기 때문에 소자패턴 형성이 불편하며 기판과 질화막의 열팽창 계수의 차이에 의해 기판의 휨 현상이 발생하는 문제점이 있었다.However, in the conventional oxide film forming method as described above, the area of the active region (device region) is reduced due to the Bird's Beak phenomenon, which occurs during field oxide film growth, and the degree of integration decreases, and the shape of the oxide film protrudes onto the semiconductor substrate. Therefore, it is inconvenient to form an element pattern, and there is a problem in that the warpage of the substrate occurs due to the difference in the coefficient of thermal expansion between the substrate and the nitride film.

본 발명은 상기의 문제점을 해결하기 위해 안출한 것으로서, 이온주입 공정시 산소 가스의 사용량을 극소화 하고, 산화막 형상이 기판위로 돌출되지 않은 평탄한 산화막을 형성하는데 그 목적이 있다.SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and has an object of minimizing the amount of oxygen gas used in the ion implantation process and forming a flat oxide film in which the oxide film does not protrude onto the substrate.

상기의 목적을 달성하기 위한 본 발명의 산화막 형성방법은 필드영역을 정의하여 필드영역의 반도체 기판상에 산소(O2) 및 규소(Si)이온을 선택적으로 주입하는 제 1 단계, 상기 반도체 기판을 열처리 하여 산소 및 규소이온이 주입된 필드영역에 필드 산화막을 형성하는 제 2 단계를 포함하여 이루어짐을 특징으로 한다.The oxide film forming method of the present invention for achieving the above object is a first step of defining a field region to selectively implant oxygen (O 2 ) and silicon (Si) ions on the semiconductor substrate of the field region, the semiconductor substrate And a second step of forming a field oxide film in the field region into which oxygen and silicon ions are implanted by heat treatment.

이하, 첨부도먼을 참조하여 본 발명의 산화막 헝성방법을 설명하먼 다음과갈다. 제 2도 (a)∼(c)는 본 발명의 산화막 형성방법을 설명하기 위한 공정단면도이다. 먼저, 제 2 도 (a)에 도시한 바와 같이, 반도체 기판(11)상에 산화막(12)을 증착하고, 상기 산화막(12)상에 감광막(13)을 도포한다.The following describes the oxide film forming method of the present invention with reference to the accompanying drawings. 2 (a) to 2 (c) are cross-sectional views for explaining the oxide film forming method of the present invention. First, as shown in FIG. 2A, an oxide film 12 is deposited on the semiconductor substrate 11, and a photosensitive film 13 is coated on the oxide film 12. As shown in FIG.

이때 상기 산화막(12)의 두께는 약 200∼1,000Å으로 성장시키고, 상기 감광막(13)의 두께는 10,000∼15,000Å 정도로 도포한다.At this time, the thickness of the oxide film 12 is grown to about 200 ~ 1,000Å, the thickness of the photosensitive film 13 is applied to about 10,000 ~ 15,000Å.

이어 필드영역과 활성영역을 정의한 후 상기 감광막 패턴을 마스크로 이용하여 제 2 도 (b)에 도시한 바와 같이, 규소(Si) 및 산소(O2)를 약 100∼150KeV의 에너지로 주입한다.Subsequently, after defining the field region and the active region, silicon (Si) and oxygen (O 2 ) are implanted with energy of about 100 to 150 KeV using the photosensitive film pattern as a mask as shown in FIG.

이때 상기 규소와 산소의 침투 깊이(필드영역의 반도체 기판으로 침투하는 길이)는 4,000∼6,000Å 정도이다.At this time, the penetration depth of silicon and oxygen (length penetrating into the semiconductor substrate in the field region) is about 4,000 to 6,000 Pa.

또한 상기 이온주입 직후에는 주입된 이온들과 실리콘 원자들과의 충돌로 인해 손상(Damage)을 받으므로, 요구되는 전기적 특성을 갖지 못한다.In addition, immediately after the ion implantation, damage due to collision between the implanted ions and silicon atoms does not have the required electrical characteristics.

따라서 어닐링 공정을 통해 불순물 고유의 전기적인 특성을 갖도록 한다.Therefore, the annealing process to have the inherent electrical characteristics of the impurity.

이때 상기 어닐링시 산화로의 분위기 가스로는 질소만을 사용한다.At this time, only the nitrogen is used as the atmosphere gas of the oxidation furnace during the annealing.

이에 따라 이미 주입된 규소와 산소를 결합하여 제 2 도 (c)에 도시한 바와 같이, 필드 산화막(14)을 형성하게 되는데, 상기 어닐링시 질소만을 사용하므로 필드 산화막(14)이 반도체 기판위로 돌출되지 않고 평탄한 필드 산화막(14)이 형성된다.As a result, as shown in FIG. 2 (c), the silicon oxide and silicon implanted are combined to form a field oxide film 14. Since only nitrogen is used during the annealing, the field oxide film 14 protrudes onto the semiconductor substrate. Instead, a flat field oxide film 14 is formed.

이상 상술한 바와 같이, 본 발명의 산화막 형성방법은 소자격리를 위한 필드 산화막 형성시 발생하는 버즈-빅 현상을 방지하여 활성영역을 최대한 확보하므로집적도가 향상되고, 반도체 기판과 평탄한 필드 산화막을 형성할 수 있는 효과가 있다.As described above, the method of forming the oxide film of the present invention prevents the buzz-big phenomenon occurring during the formation of the field oxide film for device isolation, thereby securing the maximum active area, thereby increasing the integration density and forming a flat field oxide film with the semiconductor substrate. It can be effective.

제 1 도 (a)∼(c)는 종래의 산화막 형성방법을 나타낸 공정단면도1 (a) to (c) are process cross-sectional views showing a conventional oxide film forming method.

제 2 도 (a)∼(c)는 본 발명의 산화막 형성방법을 나타낸 공정단면도2 (a) to 2 (c) are process cross-sectional views showing the oxide film forming method of the present invention.

*도면의 주요부분에 대한 부호의 설명** Description of the symbols for the main parts of the drawings *

11 : 반도체 기판 12 : 산화막11 semiconductor substrate 12 oxide film

13 : 감광막 14 : 필드 산화막13: photosensitive film 14: field oxide film

Claims (3)

필드영역을 정의하여 필드영역의 반도체 기판의 표면내에 산소(O2) 및 규소 (Si)이온을 선택적으로 주입하는 제 1 단계,A first step of defining a field region to selectively implant oxygen (O 2 ) and silicon (Si) ions into the surface of the semiconductor substrate in the field region, 상기 반도체 기판을 질소 분위기에서 열처리하여 산소 및 규소이온이 주입된 필드영역에 산화막을 형성하는 제 2 단계를 포함하여 이루어짐을 특징으로 하는 산호막 형성방법.And a second step of forming an oxide film in a field region in which oxygen and silicon ions are implanted by heat-treating the semiconductor substrate in a nitrogen atmosphere. 제 1 항에 있어서,The method of claim 1, 상기 산소(O2) 및 규소(Si)이온을 주입하는 단계는 반도체 기판상에 산화막, 감광막을 차례로 증착하는 단계,Injecting the oxygen (O 2 ) and silicon (Si) ions is a step of depositing an oxide film, a photosensitive film on the semiconductor substrate in order, 상기 감광막을 노광 및 현상공정을 통해 필드영역을 정의하는 단계,Defining a field region by exposing and developing the photoresist; 상기 필드영역에 산소 및 규소이온을 주입하는 단계를 포함하여 이루어짐을 특징으로 하는 산화막 형성방법.And injecting oxygen and silicon ions into the field region. 제 2 항에 있어서, 상기 규소 및 산소이온의 주입에너지는 100∼150KeV임을 특징으로 하는 산화막 형성방법.The method of claim 2, wherein the implantation energy of silicon and oxygen ions is 100 to 150 KeV.
KR1019950046863A 1995-12-05 1995-12-05 Method for forming oxide layer KR100379503B1 (en)

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