KR100356483B1 - Stepper for manufacturing a semiconductor device - Google Patents

Abstract

The present invention relates to an exposure apparatus for manufacturing a semiconductor device for applying a modified illumination exposure method, a light source lamp; Light separating means comprising light blocking means for separating light emitted from the light source lamp into first and second split light; First and second apertures that deform each of the first and second split lights to pass through the reticle and are symmetrically mounted about the reticle; First and second condensing lenses for condensing each of the first and second split lights having passed through the first and second apertures, respectively; Light synthesizing means for synthesizing each of the first and second split lights that have passed through the reticle into synthetic light; A reduction projection lens for reducing projection of the composite light onto the wafer; It consists of a wafer stage that holds a wafer, so that two apertures, such as an annual modified illumination quadrature or a quadruple modified illumination aperture, are mounted on one exposure machine to take advantage of the modified illumination exposure method of each aperture simultaneously. Disclosed is an exposure apparatus for manufacturing a semiconductor device capable of stably forming all fine patterns other than a specific pattern.

Description

Exposure device for manufacturing semiconductor device {Stepper for manufacturing a semiconductor device}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure apparatus for manufacturing a semiconductor device for applying a modified illumination exposure method, and in particular, to enable the multiple modified illumination exposure method in an exposure process during a manufacturing process of a semiconductor device to stably form all fine patterns instead of a specific pattern. The exposure machine for semiconductor element manufacture which can be used.

In general, as semiconductor devices become highly integrated and miniaturized, the area occupied by each element constituting the semiconductor device is also reduced. In order to form an ultra-high integration device, a core process of the current semiconductor device manufacturing process is an exposure process for forming a fine pattern. In order to stably form a fine pattern, an off-axis illumination exposure method has been recently developed. As shown in FIGS. 1A and 1B, the modified illumination exposure method is achieved by attaching an aperture such as an annual modified illumination aperture 11 or a quadruple modified illumination aperture 12 to the exposure machine. The principle of the modified illumination exposure method is to collect more interference light generated from the reticle toward the photosensitive film than the conventional method, thereby delivering more information on the reticle, thereby increasing resolution and depth of focus.

As shown in FIG. 2, the conventional exposure machine includes a condenser lens 22 for condensing light emitted from the light source lamp 21, a reduction projection lens 23 positioned under the condenser lens 22, and a wafer. The wafer stage 24 to which the 28 is mounted forms a basic configuration. The reticle 27 is located between the condensing lens 22 and the reduction projection lens 23. In order to apply the modified illumination exposure method, the aperture 26 is mounted between the light source lamp 21 and the condenser lens 22.

By the way, in the modified illumination exposure system, an effective pattern is determined according to the shape of each aperture 26. For example, in the case of the reticle 27 in which the same pattern is repeatedly repeated, such as a memory area, it is effective to use the annual modified illumination aperture 11 of FIG. 1A, but the quadrupple modified illumination aperture of FIG. 12) is known to be ineffective. On the other hand, for the reticle 27 having a random pattern such as a logic area, it is effective to use the quadruple modified illumination aperture 12 of FIG. 1B, but the annual modified illumination aperture of FIG. 1A. (11) is known to be ineffective. As such, the modified illumination exposure method cannot expect an effect on a specific pattern according to the shape of the aperture used.

Accordingly, an object of the present invention is to provide an exposure apparatus for manufacturing a semiconductor device capable of stably forming all fine patterns instead of a specific pattern by enabling a multi-deformation illumination exposure method in an exposure process during a manufacturing process of a semiconductor device.

The exposure apparatus for manufacturing a semiconductor device according to the present invention for achieving the above object includes a light source lamp; Light separating means, comprising: light separating means for separating light emitted from the light source lamp into first and second split light; First and second apertures that deform each of the first and second split lights to pass through the reticle and are symmetrically mounted about the reticle; First and second condensing lenses for condensing each of the first and second split lights having passed through the first and second apertures, respectively; Light synthesizing means for synthesizing each of the first and second split lights that have passed through the reticle into synthetic light; A reduction projection lens that reduces and projects the composite light onto the wafer; And a wafer stage for fixing the wafer.

1A and 1B are plan views of a typical annual modified illumination aperture and quadruple modified illumination aperture applied to a modified illumination exposure scheme.

2 is a configuration diagram of an exposure apparatus for manufacturing a semiconductor device for applying a conventional modified illumination exposure method.

3 is a configuration diagram of an exposure apparatus for manufacturing a semiconductor device for applying a modified illumination exposure method according to the present invention.

<Explanation of symbols for the main parts of the drawings>

11: Annual variant illumination aperture 12: Quadruple variant illumination aperture

21: light source lamp 22: condensing lens

23: reduction projection lens 24: wafer stage

25: light 26: aperture

27: reticle 28: wafer

31: light source lamp 32: light

33 and 34: first and second split light 35: synthetic light

41 to 44: first to fourth optical separators

51 to 58: first to eighth reflective mirrors

61 and 62: first and second condenser lenses

63: reduction projection lens 64: wafer stage

71 and 72: first and second light blocking films 81 and 82: first and second aperture

91: reticle 100: wafer

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

3 is a configuration diagram of an exposure apparatus for manufacturing a semiconductor device for applying a modified illumination exposure method according to the present invention.

The exposure machine of the present invention includes: a light source lamp 31; Light separating means, comprising light blocking means for separating the light 32 irradiated from the light source lamp 31 into the first and second split light 33 and 34; First and second apertures 81 and 82 that deform each of the first and second split lights 33 and 34 to pass through the reticle 91 and are symmetrically mounted about the reticle 91; First and second condensing lenses 61 and 62 for condensing the first and second split lights 33 and 34 respectively having passed through the first and second apertures 81 and 82, respectively; Light synthesizing means for synthesizing each of the first and second split lights 33 and 34 that have passed through the reticle 91 into a combined light 35; A reduction projection lens 63 for reducing and projecting the composite light 35 onto the wafer 100; It consists of a wafer stage 64 for fixing the wafer 100.

In the above, the light separation means includes a first light separator 41 for separating the light 32 irradiated from the light source lamp 31 into the first and second separation lights 33 and 34, and the first separation light ( First, third and fifth reflecting mirrors 51, 53, and 55, and second splitting light 34, which redirect the path of the first splitting light 33 so that 33 reaches the first aperture 81. ) Consists of second and fourth reflecting mirrors 52 and 54 which redirect the path of the second split light 34 to reach the second aperture 82. The light blocking means included in the light separation means includes a first light blocking film 71 provided at the path portion of the first separation light 33 and a second light blocking film 72 provided at the path portion of the second separation light 34. Is done.

The first and second apertures 81 and 82 may use apertures having various shapes, such as the annual modified illumination aperture 11 and the quadruple modified illumination aperture 12 shown in FIGS. 1A and 1B, respectively. In some cases, an aperture having the same shape may be used at the same time.

The light combining means changes the path of the first split light 33 so that the first split light 33 passing through the reticle 91 reaches the reduction projection lens 63 through the fourth light splitter 44. The second light splitter 42, the seventh reflecting mirror 57 and the eighth reflecting mirror 58, and the second splitting light 34 passing through the reticle 91 are reduced through the fourth light splitter 44. It consists of a third light splitter 43 and a sixth reflecting mirror 56 which redirect the path of the second split light 34 to reach the projection lens 63.

The exposure process of the semiconductor element using the exposure machine of this invention which has the above-mentioned structure is briefly demonstrated as follows.

And the reduction projection lens 63 via the fourth optical separator 44. The first splitting light 33 and the second splitting light 34 are synthesized by the fourth splitter 44 to be the combined light 35, which is then transferred to the wafer through the reduction projection lens 63. The photosensitive film on 100 is exposed.

The above exposure process can be variously performed according to the design rule of the semiconductor device.

First, if you want both characteristics of the annual deformed illumination aperture and the quadruple deformed illumination aperture, use the annual deformed illumination aperture as the first aperture 81 and the quadruple deformed illumination aperture as the second aperture 82 for exposure. The process can be carried out. At this time, the first and second light blocking films 71 and 72 are in an open state.

Second, in the case where only one characteristic of the annual modified illumination aperture and the quadruple modified illumination aperture is desired, an exposure process is performed using only the second aperture 82 by blocking the first separation light 33 with the first light blocking film 71. Alternatively, the second separation light 34 may be blocked by the second light blocking film 72, and the exposure process may be performed using only the first aperture 81.

Third, an exposure process is performed using an annual modified illumination aperture on both the first aperture 81 and the second aperture 82, or a quadruple modified illumination aperture is applied to both the first aperture 81 and the second aperture 82. The exposure process can be performed using.

As described above, the present invention provides a multiple modified illumination exposure method that simultaneously takes advantage of the modified illumination exposure method that each aperture has by mounting two apertures such as an annual modified illumination aperture or a quadruple modified illumination aperture in one exposure machine. This makes it possible to stably form all fine patterns other than a specific pattern.

Claims (5)

Light source lamps; Light separating means, comprising: light separating means for separating the light emitted from the light source lamp into first and second split light and changing a path of the first and second split light; First and second modified illumination apertures that deform each of the first and second split lights to pass through the reticle and are symmetrically mounted about the reticle; First and second condensing lenses for condensing each of the first and second split lights having passed through the first and second apertures, respectively; Light synthesizing means for synthesizing each of the first and second split lights that have passed through the reticle into synthetic light; A reduction projection lens that reduces and projects the composite light onto the wafer; And And a wafer stage for fixing the wafer. The method of claim 1, The optical separation means, A light separator that separates the light irradiated from the light source lamp into the first and second split lights; At least one reflective mirror for changing a path of the first split light so that the first split light reaches the first aperture; And And at least one other reflecting mirror for changing a path of the second split light so that the second split light reaches the second aperture. The method of claim 1, The light blocking means, A first light blocking film disposed in a path portion of the first split light; And An exposure apparatus for manufacturing a semiconductor device, comprising a second light blocking film provided in a path portion of the second separation light. The method of claim 1, The first and second modified illumination aperture is a semiconductor device manufacturing exposure apparatus, characterized in that using any one of a variety of shapes, such as an annual modified illumination aperture or quadruple modified illumination aperture. The method of claim 1, The light synthesizing means, At least one light splitter and at least one reflective mirror for redirecting the first split light so that the first split light passing through the reticle reaches the reduced projection lens; And At least one other optical splitter and at least one other reflective mirror for changing the path of the second split light so that the second split light passes through the reticle to reach the reduction projection lens. Exposure machine.