KR100331283B1 - Chemical Mechanical Polishing Method Preventing The Dishing And Erosion - Google Patents
Chemical Mechanical Polishing Method Preventing The Dishing And Erosion Download PDFInfo
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- KR100331283B1 KR100331283B1 KR1019990064632A KR19990064632A KR100331283B1 KR 100331283 B1 KR100331283 B1 KR 100331283B1 KR 1019990064632 A KR1019990064632 A KR 1019990064632A KR 19990064632 A KR19990064632 A KR 19990064632A KR 100331283 B1 KR100331283 B1 KR 100331283B1
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- 238000005498 polishing Methods 0.000 title claims abstract description 58
- 238000000034 method Methods 0.000 title claims abstract description 37
- 239000000126 substance Substances 0.000 title claims abstract description 14
- 230000003628 erosive effect Effects 0.000 title description 2
- 238000007517 polishing process Methods 0.000 claims abstract description 26
- 238000005260 corrosion Methods 0.000 claims abstract description 17
- 230000007797 corrosion Effects 0.000 claims abstract description 17
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 22
- 229910052721 tungsten Inorganic materials 0.000 claims description 22
- 239000010937 tungsten Substances 0.000 claims description 22
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 239000010410 layer Substances 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 6
- 239000011229 interlayer Substances 0.000 claims description 6
- 230000000873 masking effect Effects 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims 1
- 238000001514 detection method Methods 0.000 abstract description 8
- 235000012431 wafers Nutrition 0.000 description 13
- 239000000463 material Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
본 발명은, 디슁 및 부식을 방지한 화학기계적연마법에 관한 것으로서, 물질의 마찰을 이용하는 MCM법으로 센서를 소정의 위치에 설치하여 엔드포인트 디텍션 (EPD; End Point Detection)을 구축한 후, 엔드포인트를 설정하여서 연마공정을 진행하다가 엔드포인트를 감지하여서 연마공정를 마치므로 최적 상태의 웨이퍼 연마부위에 디슁(Dishing)과 부식(Erosion)을 최소화하는 매우 유용하고 효과적인 발명이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chemical mechanical polishing method that prevents dishing and corrosion. The present invention relates to an end point detection (EPD; It is a very useful and effective invention that minimizes dishing and corrosion at the wafer polishing site in the optimum state because the polishing process is completed by setting the point and then sensing the end point.
Description
본 발명은 화학기계적연마법(Chemical Mechanical Polishing)에 관한 것으로서, 특히, 물질의 마찰을 이용하는 MCM(Motor Current Method)법으로 센서를 소정의 위치에 설치하여 엔드포인트 디텍션(End Point Detection)을 구축한 후, 엔드포인트를 설정하여서 연마공정을 진행하다가 엔드포인트(End Point)를 감지하여서 연마공정를 마치므로 최적 상태의 웨이퍼 연마부위에 디슁(Dishing)과 부식 (Erosion)을 최소화하도록 하는 디슁 및 부식을 방지한 화학기계적연마법에 관한 것이다.The present invention relates to chemical mechanical polishing, and in particular, an endpoint detection is established by installing a sensor at a predetermined position by a motor current method (MCM) method using friction of a material. After setting the end point, the polishing process is performed, and the end point is detected to finish the polishing process, thus preventing dishing and corrosion to minimize the dishing and corrosion at the wafer polishing part in an optimal state. It is about a chemical mechanical polishing method.
일반적으로, 텅스텐 혹은 금속을 이용한 금속배선공정에서 메탈콘택 혹은 비아 형성시, 층간절연막과 텅스텐등을 금속층과의 접착력을 향상하기 위하여 접착층 (Glue Layer)으로서, Ti/TiN막이 주로 사용되어진다. 이 때, 층간절연막에 콘택을 형성하고, 이 콘택 내부에 금속층을 매립하여 불필요한 부분을 제거하기 위하여 화학기계적연마공정(Chemical Mechanical Polishing)을 진행하게 된다.In general, when forming a metal contact or via in a metal wiring process using tungsten or metal, a Ti / TiN film is mainly used as a glue layer to improve adhesion between the interlayer insulating film and tungsten. At this time, a contact is formed in the interlayer insulating film, and a metal mechanical layer is embedded in the contact to remove unnecessary portions.
이 화학기계적연마공정을 진행할 때, 텅스텐플러그 이외의 메탈층을 완전하게 제거하여야만 메탈브리지(Metal Bridge)에 의한 소자의 페일을 막을 수 있다.When the chemical mechanical polishing process is performed, the metal bridge other than the tungsten plug must be completely removed to prevent the device from failing by the metal bridge.
그런데, 상기 CMP연마공정을 진행할 때, 발생되는 웨이퍼 내의 연마불균일도 (Non-Uniformity)에 의하여 금속층을 완전하게 제거하기 위한 오버 폴리싱 (Over-Polishing)이라는 공정이 필요하다. 이 오버 폴리싱에 의하여 패턴의 디슁과 부식이 심하여지면, 소자의 신뢰성에 큰 영향을 미치게 된다.However, when the CMP polishing process is performed, a process called over-polishing is required to completely remove the metal layer by non-uniformity in the wafer. If the patterning and corrosion are severed by this overpolishing, the reliability of the device will be greatly affected.
이러한 오버폴리싱을 최소화하는 방법으로, CMP연마시, EPD법(End Point Detection)을 사용하고 있다. 이 EPD법은 CMP연마시에, Ti막이 거의 연마되고, 층간절연막이 드러나는 시점에서, 적층된 층의 물리적, 기계적 특성을 이용하는 것으로서, 현재, 모니터 커런트 방법(Monitor Current Method)), 라이트 디텍션 방법(Light Detection Method), 플레이튼 온도를 이용하는 방법등이 알려져 있으나 실제적으로 거의 사용되지 않고 있다.As a method of minimizing such overpolishing, EPD method (End Point Detection) is used during CMP polishing. This EPD method utilizes the physical and mechanical properties of the stacked layers at the time when the Ti film is almost polished and the interlayer insulating film is exposed during CMP polishing. Currently, the current monitoring method and the light detection method are used. Light Detection Method) and methods using platen temperature are known, but are rarely used in practice.
현재에는 대부분이 텅스텐을 CMP를 진행할 때, 도 1에 도시된 바와 같이, 금속막의 연마속도를 모니터링한다. 증착된 금속층의 두께는 공지이므로 연마속도에 비례하여 계산, 특정연마시간을 모든 웨이퍼에 적용하여 CMP연마공정을 진행한다.Currently, when most of tungsten is subjected to CMP, the polishing rate of the metal film is monitored, as shown in FIG. Since the thickness of the deposited metal layer is known, the CMP polishing process is performed by applying a specific polishing time to all wafers in proportion to the polishing rate.
그러나, 증착된 금속층의 증착두께가 균일하지 않고, 웨이퍼에 연마할수록 연마패드의 상태가 변화되므로 웨이퍼 대 웨이퍼의 연마량이 달라지게 되므로 웨이퍼간에 오버폴리싱의 차이가 발생하고, 오버폴리싱(Over-Polishing)도 커지므로 디슁과 부식이 심해지는 문제점을 지니고 있었다.However, since the deposition thickness of the deposited metal layer is not uniform, and the polishing pad changes as the polishing is performed on the wafer, the polishing amount of the wafer is changed, resulting in a difference in overpolishing between wafers and over-polishing. It also had a problem of increasing the deepening and corrosion.
본 발명은 이러한 점을 감안하여 안출한 것으로서, 물질의 마찰을 이용하는 MCM법으로 센서를 소정의 위치에서 설치하여 엔드포인트 디텍션(End Point Detection)을 구축한 후, 엔드포인트를 설정하여서 연마공정을 진행하다가 엔드포인트를 감지하여서 연마공정를 마치므로 최적 상태의 웨이퍼 연마부위에 디슁 (Dishing)과 부식(Erosion)을 최소화하는 것이 목적이다.The present invention has been made in view of this point, and after the sensor is installed at a predetermined position by the MCM method using the friction of the material to establish the endpoint detection (End Point Detection), the endpoint is set to proceed the polishing process After finishing the polishing process by detecting the end point, the objective is to minimize the dishing and corrosion on the wafer polishing part in an optimal state.
도 1은 종래의 화학기계적연마법의 레시피를 나타낸 도표이고,1 is a diagram showing a recipe of the conventional chemical mechanical polishing method,
도 2는 본 발명에 따른 디슁 및 부식을 방지한 화학기계적연마법의 레시피를 나타낸 도표이고,Figure 2 is a diagram showing the recipe of the chemical mechanical polishing method to prevent dishing and corrosion according to the present invention,
도 3은 본 발명에 따른 연마시간과 종래의 방법에 따른 연마방법을 비교한 도표이며,3 is a table comparing the polishing time according to the conventional method and the polishing time according to the present invention,
도 4는 본 발명에 따른 엔드 포인트를 나타 내주는 그래프이고,4 is a graph showing an endpoint according to the present invention,
도 5는 본 발명에 따른 디슁 및 부식을 방지한 화학기계적연마법으로 연마를 하는 경우, 부식의 개선효과를 보인 도면이다.5 is a view showing the effect of improving the corrosion when polishing by the chemical mechanical polishing method to prevent dishing and corrosion according to the present invention.
이러한 목적은 소정의 소자하부구조를 갖는 반도체기판 상에 층간절연막을 적층한 후에 마스킹식각으로 콘택홀을 형성하고, 텅스텐을 매립하여 CMP연마공정으로 텅스텐플러그를 형성하는 공정에 있어서, 상기 웨이퍼에서 CMP연마를 진행할 부위에 MCM법으로 엔드포인트를 구하는 공정과; 상기 엔드포인트를 Falling Signal로 지정하는 공정과; 상기 엔드포인트 감지시, 콘택홀에 매립된 텅스텐을 제외한 웨이퍼 상에 적층된 텅스텐을 모두 제거하고, Ti막의 일부만을 잔류한 상태에서 연마를 종료하는 제1 CMP연마 공정과; 상기 공정 후에 소정의 다운 포오스와 빽압을 가하여 웨이퍼 상에 잔류된 금속층을 제거하는 제2 CMP연마공정을 포함하여 이루어진 디슁 및 부식을 방지한 화학기계적연마법을 제공함으로써 달성된다.The object is to form a contact hole by masking etching after stacking an interlayer insulating film on a semiconductor substrate having a predetermined device substructure, and to form a tungsten plug in a CMP polishing process by embedding tungsten. Obtaining an endpoint at the site to be polished by MCM; Designating the endpoint as a falling signal; A first CMP polishing process of removing all of the tungsten stacked on the wafer except for the tungsten embedded in the contact hole and terminating the polishing in the state where only a part of the Ti film remains while detecting the endpoint; It is achieved by providing a chemical mechanical polishing method that prevents dishing and corrosion, which comprises a second CMP polishing process that applies a predetermined down force and tight pressure after the process to remove the metal layer remaining on the wafer.
그리고, 상기 제2 CMP연마공정은, 연마패드가 연마조건에 도달하기 위하여 다운포오스와 빽압을 조절하는 제1,제2단계와; 상기 단계 후에 잔류된 Ti막을 식각하는 제3단계와; 상기 단계 후에 오버-폴리싱을 최소화하기 위하여 상기 제3단계에 비하여 텅스텐연마속도가 저하되도록 하여 연마를 진행하는 제4단계를 포함하여 이루어진다.The second CMP polishing process includes: first and second steps of adjusting the downforce and the back pressure in order for the polishing pad to reach polishing conditions; Etching the Ti film remaining after the step; In order to minimize over-polishing after the step, a tungsten polishing rate is lowered as compared with the third step, and the fourth step is performed.
상기 제 3단계에서 Ti막을 80 ∼ 90% 정도 식각하는 것이 바람직 하다.In the third step, it is preferable to etch the Ti film by about 80 to 90%.
상기 제 4단계의 연마속도는, 상기 제3단계에 비하여 텅스텐연마속도가 25 ∼ 30% 정도가 되도록 하여 공정을 진행하도록 하다.The polishing rate of the fourth step is such that the tungsten polishing rate is 25 to 30% as compared to the third step so that the process proceeds.
상기 제 4단계의 연마공정은, 15 초 내지 20초 동안 진행하는 것이 바람직 하다.The polishing process of the fourth step is preferably performed for 15 seconds to 20 seconds.
이하, 첨부한 도면을 참조하여 본 발명의 바람직한 일실시예에 대해 상세하게 설명하고자 한다.Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the present invention.
본 발명의 연마공정을 살펴 보도록 하면, 먼저, 소정의 소자하부구조를 갖는반도체기판 상에 층간절연막을 적층한 후에 마스킹식각으로 콘택홀을 형성하고, 텅스텐을 매립하여 CMP연마공정으로 텅스텐플러그를 형성하는 공정에서, 웨이퍼에서 CMP연마를 진행할 부위에 MCM법(Motor Current Method)으로 엔드포인트(End Point)를 구하도록 한다.Referring to the polishing process of the present invention, first, after forming an interlayer insulating film on a semiconductor substrate having a predetermined device substructure, a contact hole is formed by masking etching, and tungsten is embedded to form a tungsten plug by a CMP polishing process. In the process, the end point is obtained by the MCM method (Motor Current Method) at the site where the CMP polishing is to be performed on the wafer.
이 때, 신호를 읽어 들이는 센서(Sensor)를 연마장치(Polisher)의 플레이튼 (Platen)에 설치하고 신호소음(Signal Noise)을 줄이는 필터(Filter)를 설치하도록 한다.At this time, a sensor for reading a signal is installed in a platen of a polishing apparatus, and a filter for reducing signal noise is installed.
그리고, 계속하여 상기 엔드포인트를 Falling Signal로 지정하도록 한다.Then, the endpoint is designated as a falling signal.
상기 공정 후에 엔드포인트를 감지할 때, 콘택홀에 매립된 텅스텐을 제외한 웨이퍼 상에 적층된 텅스텐을 모두 제거하고, Ti막의 일부만을 잔류한 상태에서 연마를 종료하는 제1 CMP연마 공정을 진행하도록 한다.When the endpoint is detected after the above process, all the tungsten deposited on the wafer except for the tungsten embedded in the contact hole is removed, and the first CMP polishing process is performed to finish polishing with only a part of the Ti film remaining. .
그리고, 상기 공정 후에 소정의 다운 포오스(Down Force)와 빽압(Back Pressure)을 가하여 웨이퍼 상에 잔류된 금속층을 제거하는 제2 CMP연마공정을 진행하여 디슁과 부식이 방지되는 CMP연마공정을 진행하도록 한다.After the process, a second CMP polishing process for removing a metal layer remaining on the wafer by applying a predetermined down force and back pressure is performed, thereby performing a CMP polishing process that prevents dishing and corrosion. Do it.
한편, 상기 제2 CMP연마공정은, 도 2에 도시된 바와같이, 제1,제2단계 로서, 연마패드가 연마조건에 도달하기 위하여 다운포오스와 빽압을 조절하도록 한다.On the other hand, the second CMP polishing process, as shown in Figure 2, as the first and second steps, the polishing pad to adjust the downforce and the back pressure to reach the polishing conditions.
그리고, 상기 제1,제2단계 후에 잔류된 Ti막을 식각하는 제3단계를 진행하도록 한다.Then, a third step of etching the Ti film remaining after the first and second steps is performed.
상기 제 3단계에서 Ti막을 80 ∼ 90% 정도 식각하는 것이 바람직 하다.In the third step, it is preferable to etch the Ti film by about 80 to 90%.
또한, 상기 단계 후에 오버-폴리싱을 최소화하기 위하여 상기 제3단계에 비하여 텅스텐연마속도가 저하되도록 하여 연마를 진행하는 제4단계를 진행하도록 한다.Further, in order to minimize over-polishing after the step, the tungsten polishing rate is lowered as compared with the third step so that the fourth step of grinding is performed.
상기 제 4단계의 연마속도는, 상기 제3단계에 비하여 텅스텐연마속도가 25 ∼ 30% 정도가 되도록 하여 공정을 진행하는 것이 바람직 하고, 15 초 내지 20초 동안 진행하는 것이 바람직 하다.In the fourth polishing step, the tungsten polishing rate is 25 to 30% as compared to the third step, and the process is preferably performed for 15 seconds to 20 seconds.
도 3은 본 발명에 따른 연마시간과 종래의 방법에 따른 연마방법을 비교한 도표이며, 도 4는 본 발명에 따른 엔드 포인트를 나타 내주는 그래프이다. 이 엔드 포인트는 시그널 그래프가 상승하다가 하락하는 지점을 잡도록 한다.3 is a table comparing the polishing time according to the present invention and the polishing method according to the conventional method, and FIG. 4 is a graph showing an end point according to the present invention. This endpoint allows the signal graph to catch the point as it rises and falls.
도 5는 본 발명에 따른 디슁 및 부식을 방지한 화학기계적연마법으로 연마를 하는 경우, 부식의 개선효과를 보인 도면으로서, 종래에 비하여 본 발명에 따른 CMP연마법을 적용하면 패턴 사이즈(Pattern Size)에 대하여 상대적으로 부식의 높이(Relative Height Of Erosion)가 낮아지는 정도를 보이고 있다.5 is a view showing the effect of improving the corrosion when the grinding by the chemical mechanical polishing method to prevent the dish and corrosion according to the present invention, when applying the CMP polishing method according to the present invention compared to the conventional pattern size (Pattern Size Relative Height Of Erosion is relatively low.
상기한 바와 같이, 본 발명에 따른 디슁 및 부식을 방지한 화학기계적연마법을 이용하게 되면, 물질의 마찰을 이용하는 MCM법으로 센서를 소정의 위치에서 설치하여 엔드포인트 디텍션(End Point Detection)을 구축한 후, 엔드포인트를 설정하여서 연마공정을 진행하다가 엔드포인트를 감지하여서 연마공정를 마치므로 오버-폴리싱(Over-Polishing Time)시간을 줄여주어 웨이퍼 연마부위에 디슁 (Dishing)과 부식(Erosion)을 최소화하므로 소자의 전기적인 특성을 향상하도록 하는 매우 유용하고 효과적인 발명이다.As described above, when the chemical mechanical polishing method which prevents the dishing and corrosion according to the present invention is used, the end point detection is established by installing the sensor at a predetermined position by the MCM method using friction of materials. After setting the end point, the polishing process is performed. After detecting the end point, the polishing process is completed to reduce the over-polishing time, thereby minimizing dishing and corrosion on the wafer polishing area. Therefore, it is a very useful and effective invention to improve the electrical characteristics of the device.
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