KR100297984B1 - A color filter plate and a fabricating method thereof - Google Patents

Abstract

The present invention relates to a color filter substrate for filtering light using a multilayer inorganic insulating film and a method of manufacturing the same, in order to filter color with the same characteristics as a conventional resin color filter using a multilayer inorganic material layer. And a first color filter formed of a first multilayer inorganic material layer in which two or more light transmissive material layers are stacked on the substrate, and a second multilayer inorganic material layer in which two or more light transmissive material layers are stacked on the substrate. A color filter substrate including a second color filter and a third color filter formed of a third multilayer inorganic material layer having two or more light transmitting material layers stacked on the substrate is provided, and manufactured using a conventional resin color filter. It is possible to improve the yield by eliminating projection defects appearing in the color filter, and to have a color filter on array structure. Can be, and has the advantage that than using an expensive resin color filter, to reduce the process cost.

Description

Color filter substrate and its manufacturing method {A COLOR FILTER PLATE AND A FABRICATING METHOD THEREOF}

The present invention relates to a color filter substrate and a method for manufacturing the same, and more particularly, to a color filter substrate for filtering light using a multilayer inorganic insulating film and a method for manufacturing the same.

1 is a schematic cross-sectional view of a liquid crystal display device having a color filter substrate according to the prior art.

A liquid crystal display device which independently drives a plurality of pixel cells to supply and implement an image signal to each pixel cell is formed corresponding to two substrates.

Each pixel cell located above the first substrate 10 in the lower plate is a pixel cell internal region 12 including a TFT 11 and a pixel electrode or a reflection plate, and wirings for selecting and injecting electric signals independently. (Not shown) is provided.

In addition, each cell positioned on the second substrate 11 corresponding to the first substrate 10 on the upper plate has a light blocking layer formed to correspond to an opaque portion of the first substrate, for example, a TFT portion and wirings. 15 and a color filter 16 formed corresponding to the pixel electrode or the inner region 12 of the pixel cell, such as a reflecting plate, and emitting an optional color, for example, red (R), green (G), or blue (B). ) Is formed. And the ITO layer 17 which is a common electrode is formed.

In order to manufacture the upper plate, the light blocking layer 15 is formed on the second substrate 11 corresponding to the opaque portion of the lower plate, and the color filter 16 is formed on the portion corresponding to the pixel cell inner region 12. The common electrode 17 is formed on the upper surface of the upper substrate using a transparent conductive material.

At this time, the color filter 17 coats the colored resin on the exposed entire surface of the substrate, and is then formed by selective exposure and development operations, and the operation is performed the same number of times according to the number of kinds of colors. As shown in the figure, when the color filter having three colors of R, G, and B is formed, the above operation is performed three times.

After preparing the lower plate and the upper plate respectively provided by the manufacturing process as described above, the manufacturing of the liquid crystal display device is completed through a process such as bonding the two substrates together.

In the prior art, color filters are formed using colored resins. However, the resin has a disadvantage in that the material is weak to heat. In addition, since the resin is a material that increases the process unit price, the resin acts as a disadvantage in terms of price competitiveness of the product.

The present invention is to provide a color filter substrate for filtering a color with the same characteristics as a conventional resin color filter using a multi-layer inorganic material layer and a method of manufacturing the same.

To this end, the present invention provides a substrate, a first color filter formed of a first multilayer inorganic material layer in which two or more light transmissive material layers are stacked on the substrate, and a second two or more light transmissive material layers stacked on the substrate. Provided is a color filter substrate comprising a second color filter formed of a multilayer inorganic material layer and a third color filter formed of a third multilayer inorganic material layer in which two or more light transmissive material layers are stacked on the substrate.

The present invention also provides a process for preparing a substrate, a first process of depositing and etching a first multi-layered inorganic material layer having a first color on the substrate to form a first color filter, and a result of the first process. Depositing and etching a second multilayer inorganic material layer forming a second color on the substrate to form a second color filter; and a third multilayer inorganic material layer forming a third color on the substrate as a result of the second process. It provides a color filter substrate manufacturing method comprising the step of forming a third color filter by deposition and etching.

1 is a schematic cross-sectional view of a substrate with a color filter according to the prior art

2 and 3 is a schematic layer structure diagram of the inorganic CF and the conventional resin CF according to the present invention

4 is a color characteristic diagram showing color implementation of inorganic CF and resin CF;

5 is a reflectance characteristic according to the light wavelength of the reflective red-inorganic CF according to the present invention

6 is a reflectance characteristic chart according to the light wavelength of the reflective green-inorganic CF according to the present invention.

7 is a reflectance characteristic according to the light wavelength of the reflective blue-inorganic CF according to the present invention

8 is a reflectance characteristic according to the light wavelength of the reflective magenta-inorganic CF according to the present invention

9 is a reflectance characteristic according to the light wavelength of the reflective cyan-inorganic CF according to the present invention

10 is a reflectance characteristic diagram according to the light wavelength of the reflective yellow-inorganic CF according to the present invention

11 is a reflectance characteristic according to the light wavelength of the transmission type red-inorganic CF according to the present invention

12 is a reflectance characteristic according to the light wavelength of the transmission-type green-inorganic CF according to the present invention

13 is a reflectance characteristic diagram according to the light wavelength of the transmission type blue-inorganic CF according to the present invention

14A through 14F are manufacturing process diagrams of a reflective color filter substrate according to the present invention.

15 is a cross-sectional structure diagram of a transmissive color filter substrate according to the present invention

16A through 16F are manufacturing process diagrams of a liquid crystal display device having a reflective color filter substrate according to the present invention.

FIG. 17 is a schematic layer structure diagram of a TFT portion in FIG. 16F

18 is a color filter arrangement in a color filter substrate according to the present invention;

Hereinafter, the present invention will be described with reference to the following examples and accompanying drawings.

The present invention is to form an inorganic color filter (ICF, hereinafter referred to as inorganic CF) using a multilayer inorganic material layer rather than a resin.

When light passes through the interface, it is transmitted, reflected and absorbed.

When the light passing through the medium 1 passes through the medium 2, it has a predetermined reflectance and transmittance. In this case, when light is incident on a multilayer film formed by superimposing several selected thin films, only a predetermined light wavelength band can be reflected or transmitted. Therefore, it can be used as a color filter for laminating and properly filtering the light transmitting layer appropriately selected.

The properties of the multilayer film in relation to the optical properties can be expressed by the following equation.

In a multilayer film laminated with n layers,

Here, N _r , d _r , and θ _r represent the refractive index, the film thickness, and the refractive angle of the multilayer film, respectively, and η ₀ represents the refractive index of air.

In the case of the inorganic CF produced by the present invention, if a material having an absorption coefficient is used, an inorganic CF having a lower layer structure can be produced.

Therefore, N can be expressed as follows by n (number of layers) and k (absorption coefficient).

N = n-ik

According to the above formulas, if the thickness and absorption coefficient of the respective inorganic material layers forming the inorganic CF are properly selected and combined, it is possible to produce an inorganic CF capable of color realization even in a low layer structure.

2 to 4 are views for explaining an experiment showing that the inorganic CF produced according to the present invention can implement color.

2 shows the inorganic CF showing the red color.

Excluding the aluminum layer 21 which is a reflective layer, it has a thickness of 2400 kPa.

The inorganic CF shown in the figure is formed by sequentially stacking the SiNx layer 22, the a-Si layer 23, and the ITO layer 24 on the aluminum layer 21. Unexplained reference numeral 20 is a glass substrate.

3 shows a resin CF made of the red resin 32.

The thickness of the resin formed on the aluminum layer 31 as the reflective layer has a thickness of 9500 kPa including the transparent conductive layer 33. Unexplained reference numeral 30 is a glass substrate.

4 is a color index table showing color characteristics shown at a viewing angle of 10 degrees in order to compare the color implementation of the inorganic CF and the resin CF shown in FIGS. 2 and 3. .

As can be seen from the color index, the inorganic CF according to the present invention exhibits similar color characteristics in color implementation as compared with resin CF. Therefore, the inorganic CF formed of the multilayer inorganic material layer according to the present invention can be used as a color filter of the device like the conventional resin CF.

An example of an inorganic CF that may be provided when the present invention is to be applied to a reflective color filter substrate is shown in the following table.

In the following example, the reflective inorganic CF is formed by stacking a multilayer inorganic material layer on a reflective layer using an Al layer having a thickness of 0.2 μm as a reflective layer. As the reflective layer, any kind of material layer having a light reflection characteristic such as an Mo layer, a Cr layer, etc. in addition to the aluminum layer is not limited.

Inorganic CF Collar Layer Classification of Inorganic CF Layer Thickness (㎛) R (red) First floor a-Si 0.07 Second floor SiN _X 0.14 3rd Floor ITO 0.05 G (green) First floor SiN _X 0.33 Second floor a-Si 0.035 3rd Floor ITO 0.15 B (blue) First floor a-Si 0.02 Second floor Cr 0.02 3rd Floor ITO 0.08

5 to 7 show results of reflection characteristics for each optical wavelength band shown by the reflective red-inorganic CF, the reflective green-inorganic CF, and the reflective blue-inorganic CF shown in [Table 1].

By the same method, the following inorganic CF can also be formed.

Inorganic CF Collar Layer Classification of Inorganic CF Layer Thickness (㎛) Mg (magenta) First floor SiO ₂ 0.12 Second floor a-Si 0.12 3rd Floor ITO 0.1 Cy (cyan) First floor SiN _X 0.18 Second floor a-Si 0.024 3rd Floor ITO 0.127 Ye (yellow) First floor SiN _X 0.15 Second floor a-Si 0.01 3rd Floor ITO 0.06

8 to 10 show the reflection characteristics for each wavelength of light shown by the reflective magenta-inorganic CF, cyan-inorganic CF, and yellow-inorganic CF shown in [Table 2].

Examples of inorganic CF that may be provided when the present invention is to be applied to a transmissive color filter substrate are illustrated in the following table.

The transmissive inorganic CF in the following example is formed by stacking a multilayer inorganic material layer on a transparent insulating substrate.

Inorganic CF Collar Layer Classification of Inorganic CF Layer Thickness (㎛) R (red) The first floor a-Si 0.17 2nd floor ITO 0.12 G (green) The first floor ITO 0.15 2nd floor SiN _x 0.2 3rd floor a-Si 0.04 4th floor SiN _x 0.2 5th floor ITO 0.15 B (blue) The first floor ITO 0.18 2nd floor Al 0.008 3rd floor ITO 0.18 4th floor Al 0.008 5th floor ITO 0.15

11 to 13 show the results of reflection characteristics for each wavelength of light shown by the transmission red-inorganic CF, the transmission green-inorganic CF, and the transmission blue-inorganic CF shown in [Table 3].

As set forth above, by stacking the inorganic material layers to a predetermined thickness and by a predetermined number of layers, and disposing each inorganic material layer at a predetermined layer position, an inorganic CF having excellent color characteristics can be formed.

In particular, the inorganic CFs shown in the above tables are configured to have at least one material layer having light transmittance and having an absorption coefficient. It is a material that constitutes the material layer having absorption coefficient, and has an absorption coefficient of 4.5 to 0.001 in the range of 380 to 780 nm, an Al layer having an absorption coefficient of 2.5 to 7.8 and a Cr layer having an absorption coefficient of 2.5 to 4.8. This is an example.

like this. When using a material layer formed of a material having an absorption coefficient as one constituent layer of an inorganic CF having a specific color, an inorganic CF capable of filtering colors can be manufactured even in a low layer structure having two to five layers. In this case, as shown in the above equation, it is important to select and combine the absorption coefficient of each inorganic material layer or the thickness of the material layer as appropriate.

In the above example, a material layer formed of a-Si, SiN _X , ITO, Cr, SiO ₂ , and Al is used as the material layer forming the inorganic CF. However, if the material layer is formed of a material having a light transmissive material as well as the above-described material layer, it can be used as a constituent layer of the inorganic CF that filters the color according to the appropriate combination of the material layers. For example, a material layer formed of a semiconductor material such as poly-Si, a metal material of Mo, Cr, AlNd, or an oxide thereof may be used as one constituent layer of the inorganic CF.

14A to 14G schematically illustrate a manufacturing process of the reflective color filter substrate according to the present invention.

Referring to FIG. 14A, an aluminum layer 41 is formed as a reflective layer on the insulating substrate 40.

Subsequently, a first multilayer inorganic material layer 41 having a red color is formed. As shown in Table 1, the first multilayer inorganic material layer 41 sequentially contains an a-Si layer of 0.07 μm, a SiN _X layer of 0.14 μm, and an ITO layer of 0.05 μm. It can be formed by laminating.

Subsequently, a first photoresist pattern PR1 defining a red color filter is selectively formed on the first multilayer inorganic material layer 41.

Referring to FIG. 14B, the first multilayer inorganic material layer 41 is etched using the first photoresist pattern PR1 as an etch mask to form red-inorganic CF (R).

Referring to FIG. 14C, a second multilayer inorganic material layer 42 emitting green color is formed on the exposed front surface of the substrate. As shown in Table 1, the second multilayer inorganic material layer 42 sequentially forms a SiN _X layer of 0.33 µm, an a-Si layer of 0.035 µm thick, and an ITO layer of 0.15 µm thick, as shown in Table 1. It can be formed by laminating.

Subsequently, a second photoresist pattern PR2 defining a green color filter is selectively formed on the second multilayer inorganic material layer PR2.

Referring to FIG. 14D, the second multilayer inorganic material layer 42 is etched using the second photoresist pattern PR2 as an etch mask to form green-inorganic CF (G).

Referring to FIG. 14E, a third multilayer inorganic material layer 43 emitting blue color is formed on the exposed front surface of the substrate. As shown in Table 1, the third multi-layered inorganic material layer 43 sequentially includes an a-Si layer of 0.02 μm, a Cr layer of 0.02 μm, and an ITO layer of 0.08 μm. It can be formed by laminating.

Subsequently, a third photoresist pattern PR3 defining a blue color filter is selectively formed on the third multilayer inorganic material layer PR3.

Referring to FIG. 14F, the third multilayer inorganic material layer 43 at the bottom thereof is etched using the third photoresist pattern PR3 as an etch mask to form blue-inorganic CF (B).

15 shows a cross-sectional structure of a transmissive color filter substrate according to the present invention.

A light shielding layer 51 is formed on the insulating substrate 500, and red inorganic CF (R), green inorganic CF (G), and blue CF (B) are formed. These inorganic CFs (R) (G) (B) are composed of multilayer inorganic material layers.

In the same manner as the manufacturing process of the reflective color filter substrate according to the present invention, one inorganic CF is selectively and sequentially formed.

At this time, an example of the multilayer inorganic material layer constituting the respective inorganic CF is as shown in Table 3.

For example, red-inorganic CF (R) is formed by sequentially stacking an a-Si layer having a thickness of 0.17 µm and an ITO layer having a thickness of 0.12 µm, and then etching the green-inorganic CF (G) with a thickness of 0.15 µm. Layer of ITO, 0.2 µm thick SiN _X layer, 0.04 µm a-Si layer, 0.2 µm thick SiN _X layer, 0.15 µm thick ITO layer, and then photoetched to form a blue- Inorganic CF (B) is formed by sequentially stacking a 0.18 μm thick ITO layer, a 0.008 μm thick Al layer, a 0.18 μm thick ITO layer, a 0.008 μm thick Al layer, and a 0.15 μm thick ITO layer. It is.

16A to 16G schematically illustrate a manufacturing process of the reflective liquid crystal display device according to the present invention.

Referring to Fig. 16A, the TFTs 51-1, 51-2, 51-3, pixel cell internal regions 52-1, 52-2, 52-3, and the like are subjected to a conventional manufacturing process. The board | substrate of the reflection type liquid crystal display device in which the pixel cell provided is provided is provided. For convenience of description, pixel cells are classified into first and second type pixel cells.

Then, a light reflective material layer, such as an aluminum layer, a chromium layer, or a molybdenum layer, is deposited on the entire surface of the substrate and photo-etched to reflect the light reflection layers 60-1, 60-2, 60-60 on each pixel cell. 3) form.

Referring to FIG. 16B, a first multi-layered inorganic material layer 61 emitting red color is formed on the entire surface of the substrate. As shown in Table 1, the first multilayer inorganic material layer 61 is formed of an a-Si layer of 0.07 µm, a SiN _X layer of 0.14 µm thick, and an ITO layer of 0.05 µm thick, as shown in Table 1 below. It can be formed by laminating sequentially.

Subsequently, the photoresist pattern forming process is performed by diffraction exposure method, so that the first photoresist pattern PR1 and the first photoresist positioned on the TFTs 51-1, 51-2, 51-3 of each pixel cell are first formed. The first photoresist pattern PR2 is formed on the pixel cell inner region 52-1 of the pixel pixel cell. In this case, the first photoresist pattern PR1 is formed relatively thicker than the second photoresist pattern PR2.

Referring to FIG. 16C, the first multilayer inorganic material layer 61 is dry-etched using the first photoresist pattern PR1 and the second photoresist pattern PR2 as a mask to form an internal region 52 of the first type pixel cell. Red inorganic CF (R) is formed in -1). At this time, the first multilayer inorganic material layer 61 remains on the TFTs 51-1, 51-2, and 51-3 by the first photoresist pattern PR1.

After that, the photoresist removing process is performed, but the first photoresist pattern PR1 is relatively thicker than the second photoresist pattern PR2 by adjusting the process time so that only the second photoresist pattern PR2 can be removed. Allow a portion of to remain at the proper thickness.

Therefore, the stacked structure of the first multilayer inorganic material layer 61 and the remaining layer PR1 'of the first photoresist pattern is positioned on the TFTs 51-1, 51-2, 51-3, and the first The red-inorganic CF (R) is positioned above the inner region 52-1 of the pixel cell.

Referring to FIG. 16D, a second multilayer inorganic material layer 62 that emits green color is formed on the entire surface of the exposed substrate. The second multilayer inorganic material layer 62 is a 0.33 μm thick SiN _X layer, a 0.035 μm thick a-Si layer, and a 0.15 μm ITO layer, as shown in Table 1 to form green-inorganic CF. It can be formed by sequentially stacking.

Subsequently, the photoresist pattern forming process is performed by diffraction exposure method, so that the third photoresist pattern PR3 and the second photoresist positioned on the TFTs 51-1, 51-2, 51-3 of each pixel cell are formed. A fourth photoresist pattern PR4 is formed on the pixel cell inner region 52-2 of the pixel cell. In this case, the third photoresist pattern PR3 is formed relatively thicker than the fourth photoresist pattern PR4. In the third photoresist pattern PR3, the fourth photoresist pattern PR4 is the same as the method of forming the second photoresist pattern PR2 in the first photoresist pattern PR1 described with reference to FIG. 16B.

Referring to FIG. 16E, the second multilayer inorganic material layer 62 is dry-etched using the third photoresist pattern PR3 and the fourth photoresist pattern PR4 as a mask to form an internal region 52 of the second type pixel cell. -2) to form a green-inorganic CF (G) on top. At this time, the second multilayer inorganic material layer 62 remains on the TFTs 51-1, 51-2, and 51-3 by the third photoresist pattern PR1.

Thereafter, the photoresist removing process is performed, but the third photoresist pattern PR3 is thicker than the fourth photoresist pattern PR4 by adjusting the process time so that only the fourth photoresist pattern PR4 is removed. Allow a portion of to remain at the proper thickness.

The manufacturing process of the green inorganic CF described with reference to FIGS. 16D and 16E is the same as the manufacturing process of the red-inorganic CF described with reference to FIGS. 16B and 16C.

As a result of forming the green inorganic CF on the second type pixel cell inner region 52-2, the first multilayer inorganic material layer 61 is formed on the TFTs 51-1, 51-2, and 51-3. The stacked structure of the remaining layer PR1 ′ of the first photoresist pattern, the second multilayer inorganic material layer 62, and the remaining layer PR3 ′ of the third photoresist pattern is provided.

Referring to FIG. 16F, the blue-inorganic CF (above the blue-inorganic CF (R) or the green-inorganic CF (G) in the same manner as in the manufacturing process of the third type pixel cell inner region 52-3. B) is also formed in a board | substrate.

As a result of the formation of the blue inorganic CF (B), the first multilayer inorganic material layer 61 and the remaining layer PR1 'of the first photoresist pattern are formed on the TFTs 51-1, 51-2 and 51-3. ), The second multilayer inorganic material layer 62, the remaining layer PR3 'of the third photoresist pattern, the third multilayer inorganic material layer 63, and the stacked structure PR5' of the remaining layer PR5 'of the fifth photoresist pattern. Is prepared. In other words, the inorganic material layer of the photoresist film multilayer is thickly stacked on the TFT, and the stacked structures 68-1, 68-2, and 68-3 are formed on the upper and lower plates in which various elements are provided in the liquid crystal display device. In the process of bonding, it may be used as a spacer for maintaining a gap for the space in which the liquid crystal between the upper plate and the lower plate. An enlarged view of the spacers 68-1, 68-2, 68-3 positioned on the TFT is shown in FIG.

During the manufacturing process of the color filter, the stacking structure of the material layer forming the spacer may vary according to the color filter formation order.

Since the spacer has a function for maintaining the gap between the upper and lower plates bonded together, the spacer may be formed on the upper portion of each TFT as illustrated above, but only a predetermined portion of the TFT may be selected and formed in an appropriate number.

FIG. 18 shows a color filter arrangement diagram of another type in the liquid crystal display according to the thirteenth embodiment of the present invention.

A method of implementing red (R), green (G), and blue (B), the three primary colors of the blue color method inside the pixel cell are yellow-inorganic CF (Ye), magenta-inorganic CF (Mg), and cyan-inorganic CF ( Cy) is produced and arranged. One pixel cell is divided into two parts to realize one color by mixing two colors.

The multilayer inorganic material layers for forming yellow inorganic CF (Ye), magenta inorganic CF (Mg), and cyan inorganic CF (Cy) are as shown in [Table 3].

As described above, the inorganic CF formed of the multilayer inorganic material layer according to the present invention can be applied to an element requiring a color filter, for example, a liquid crystal display device.

The present invention provides a color filter and various displays including the color filter by using a light-transmitting multilayer inorganic material layer, thereby eliminating the projection defects appearing in the color filter manufactured using the existing resin color filter, thereby improving the yield. It can be improved and configured to have a color filter on array structure. In addition, there is an advantage that the process cost can be lowered than in the case of using an expensive resin color filter. In particular, in the case of using a material layer having an absorption coefficient, even if the inorganic CF is taken in a low layer structure, color can be implemented, and thus it can be a practical inorganic color filter.

Claims (11)

Substrate, A first color filter formed of a first multilayer inorganic material layer having two or more light transmissive material layers stacked on the substrate; A second color filter formed of a second multilayer inorganic material layer having two or more light transmitting material layers stacked on the substrate; And a third color filter formed of a third multilayer inorganic material layer in which two or more light transmitting material layers are stacked on the substrate. The method according to claim 1, And at least one light transmitting material layer having an absorption coefficient in the multilayer inorganic material layers. The method according to claim 1 or 2, And a light reflection layer between the substrate and the color filters. The method according to claim 3, The light reflection layer is a color filter substrate formed of a metal material such as Al, Cr, Cu, Mo, AlNd. The method according to claim 3, The first multilayer inorganic material layer is sequentially stacked a-Si layer, SiN _X layer, ITO layer on the light reflection layer, the second multilayer inorganic material layer is a SiN _X layer, a- on the light reflection layer The Si layer and the ITO layer are sequentially stacked, and the third multilayer inorganic material layer is a color filter substrate in which an a-Si layer, Cr layer, and ITO layer are sequentially stacked on the light reflection layer. The method according to claim 1 or 2, The first multilayer inorganic material layer is formed by sequentially stacking an ITO layer and an a-Si layer, and the second multilayer inorganic material layer includes an ITO layer, a SiN _X layer, an a-Si layer, a SiN _X layer, and an ITO layer. The third multilayer inorganic material layer is formed by sequentially stacking the color filter substrate in which an ITO layer, an Al layer, an ITO layer, an Al layer, and an ITO layer are sequentially stacked. Preparing a substrate; A first process of forming a first color filter by depositing and etching a first multilayer inorganic material layer having a first color on the substrate; Forming a second color filter by depositing and etching a second multi-layer inorganic material layer having a second color on the substrate resulting from the first process; And depositing and etching a third multi-layered inorganic material layer forming a third color on the substrate resulting from the second process to form a third color filter. The method according to claim 7, And forming the multilayer inorganic material layers to include at least one light transmissive material layer having an absorption coefficient. The method according to claim 7 or 8, And forming a light reflection layer interposed between the substrate and the color filters after preparing the substrate. The method according to claim 9, The first multilayer inorganic material layer is sequentially stacked a-Si layer, SiN _X layer, ITO layer on the light reflection layer, the second multilayer inorganic material layer is a SiN _X layer, a- on the light reflection layer The Si layer and the ITO layer are sequentially laminated, and the third multilayer inorganic material layer is a color filter substrate manufacturing method of sequentially laminating an a-Si layer, Cr layer, and ITO layer on the light reflection layer. The method according to claim 7 or 8, The first multilayer inorganic material layer is formed by sequentially stacking an ITO layer and an a-Si layer, and the second multilayer inorganic material layer includes an ITO layer, a SiN _X layer, an a-Si layer, a SiN _X layer, and an ITO layer. The third multilayer inorganic material layer is formed by sequentially stacking, the method of manufacturing a color filter substrate in which the ITO layer, Al layer, ITO layer, Al layer, ITO layer is sequentially stacked.