KR100289146B1 - Method for making a mesa of laser diode of buried heterostructure - Google Patents
Method for making a mesa of laser diode of buried heterostructure Download PDFInfo
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- KR100289146B1 KR100289146B1 KR1019990002519A KR19990002519A KR100289146B1 KR 100289146 B1 KR100289146 B1 KR 100289146B1 KR 1019990002519 A KR1019990002519 A KR 1019990002519A KR 19990002519 A KR19990002519 A KR 19990002519A KR 100289146 B1 KR100289146 B1 KR 100289146B1
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- 238000000034 method Methods 0.000 title claims abstract description 7
- 230000000903 blocking effect Effects 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 238000005530 etching Methods 0.000 claims abstract description 15
- 238000000151 deposition Methods 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 2
- 238000005498 polishing Methods 0.000 claims description 2
- 230000012010 growth Effects 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- OKKJLVBELUTLKV-UHFFFAOYSA-N methanol Substances OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000034655 secondary growth Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
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- Condensed Matter Physics & Semiconductors (AREA)
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- Semiconductor Lasers (AREA)
Abstract
매몰 헤테로구조체 레이저 다이오드의 메사를 형성하기 위해 HBr, H2O2, H2O 및 HCl을 일정한 비율로 혼합한 혼합 에칭액을 사용하여 에칭함으로써 메사의 상층부 폭이 하층부의 폭보다 넓게 형성되도록 하는 매몰 헤테로구조체인 레이저 다이오드의 메사를 형성시키는 방법이 개시되어 있다. N형의 InP 기판위에 1차성장으로 DH구조의 에피택셜층(B, C, D, E층)을 성장시킨 후 에피택셜층의 Cap layer인 E층을 제거한다. 상기 E층을 제거한 후 Si3N4막을 침착시키고, Si3N4stripe를 형성한 후 HBr, H2O2, H2O 및 HCl을 일정한 비율로 혼합한 에칭액을 이용하여 메사를 형성시키며, 상기 메사는 상층부가 하층부보다 넓은 면적을 갖도록 형성시키므로써 메사의 양측에 형성되는 전류차단층이 두껍게 형성되어 전류차단층과 메사가 인접하는 접촉부를 통해 누설전류가 발생하지 않도록 한다.In order to form the mesa of the buried heterostructure laser diode, etching is performed by using a mixed etching solution containing HBr, H 2 O 2 , H 2 O and HCl in a constant ratio so that the upper width of the mesa is wider than the width of the lower layer. A method of forming a mesa of a laser diode that is a heterostructure is disclosed. After the epitaxial layers (B, C, D, E layers) of the DH structure are grown on the N-type InP substrate by the first growth, the E layer which is the cap layer of the epitaxial layer is removed. After removing the E layer, a Si 3 N 4 film was deposited, and a Si 3 N 4 stripe was formed to form a mesa using an etchant in which HBr, H 2 O 2 , H 2 O, and HCl were mixed at a constant ratio. The mesa is formed so that the upper layer has a larger area than the lower layer, so that a current blocking layer formed on both sides of the mesa is formed thick so that no leakage current is generated through the contact portion adjacent to the current blocking layer and the mesa.
Description
본 발명은 매몰 헤테로구조체의 레이저 다이오드에 관한 것으로, 보다 상세하게는 매몰 헤테로구조체 레이저 다이오드의 메사를 형성하기 위해 HBr, H2O2, H2O 및 HCl을 일정한 비율로 혼합한 혼합 에칭액을 사용하여 에칭함으로써 메사의 상층부 폭이 하층부의 폭보다 넓게 형성되도록 하는 매몰 헤테로구조체인 레이저 다이오드의 메사를 형성시키는 방법에 관한 것이다.The present invention relates to a laser diode of a buried heterostructure, and more particularly, to use a mixed etching solution of HBr, H 2 O 2 , H 2 O and HCl in a constant ratio to form a mesa of a buried heterostructure laser diode. To form a mesa of a laser diode which is a buried heterostructure in which the upper portion of the mesa has a width wider than that of the lower layer.
종래의 InP계 BH-LD의 제조공정은 도 1 및 도 2(a)에서 도시된 바와같이, InP 기판(A)에 DH(Double Heterostructure)구조의 에피층을 성장(1차성장)시키고, 도 2(b)에서 나타낸 바와같이, 캡층(cap layer)인 InGaAsP층을 제거한다. 그 후에 Si3N4막을 PECVD(Plasma Enhanced Chemical Vapor Deposition)장비로 침착(deposit)하고, 사진석판술(Photolithography)을 사용하고 Br-methanol계 또는 HBr계 에칭액을 사용하여 도 2의 (c)를 메사 에칭한다.In the conventional manufacturing process of InP-based BH-LD, as shown in FIGS. 1 and 2 (a), an epitaxial layer having a double heterostructure (DH) structure is grown (primary growth) on an InP substrate A, and FIG. As shown in 2 (b), the InGaAsP layer, which is a cap layer, is removed. Thereafter, the Si 3 N 4 film was deposited using a Plasma Enhanced Chemical Vapor Deposition (PECVD) apparatus, photolithography, and Br-methanol-based or HBr-based etching solution. Mesa etch.
다음에는 전류차단층(Current blocking layer)을 성장(2차성장)시키는데, 이때, 도 2의 (d)와같이 Si3N4막을 제거하지 않고 전류차단층(a층, b층)을 성장시키므로써 메사위에 전류차단층이 성장하는 것을 방지할 수 있다. 이어서, Si3N4막을 제거한 후 도 2의 (e)와 같이 3차성장(c층, d층)시킨다.Next, a current blocking layer is grown (secondary growth). At this time, the current blocking layer (a layer, b layer) is grown without removing the Si 3 N 4 film as shown in FIG. The growth of the current blocking layer on the mesas can be prevented. Subsequently, after removing the Si 3 N 4 film, it is subjected to tertiary growth (c layer, d layer) as shown in FIG.
즉, 종래에는 매몰 헤테로구조체인 레이저 다이오드(BH-LD)의 제작은 도 2에서 나타낸 바와같이, BH공정에서 Si3N4막을 에칭마스크로 사용하여 Br-methanol계 또는 HBr계 에칭액으로 메사 에칭한 후 전류차단층을 성장한다. 즉, 도 1에서 나타낸 바와같이, 메사의 양측면이 DH기판과 수직상태가 되도록 형성되면 메사(10)의 양측에 성장되는 전류차단층(a층과 b층)에는 간섭영역이 형성된다. 상기 전류차단층의 a층 및 b층에 해당하는 a1 및 b1은 120°의 큰 각을 갖도록 형성되지만, a2 및 b2는 40°의 작은 각을 갖게된다. 상기 a2 및 b2가 작은 각을 갖게 되므로 a2 및 b2의 두께가 얇아 a2 및 b2의 영역을 통해 누설전류가 발생하게 된다. 따라서, 메사의 형태에 따라 전류차단층의 모양(두께)이 달라지게 되며, 전류차단층과 메사의 사이에서 발생되는 누설전류는 전류차단층의 두께 및 도핑농도의 함수로서 표현이 되는데 도핑농도는 MOCVD설비에 의해 쉽게 제어할 수 있지만 전류차단층의 두께는 조절하기가 매우 어려워 메사와 전류차단층(a층)의 사이(10) 및 전류차단층(a층과 b층)(12)에서 간섭이 발생함으로써 누설전류가 발생하는 문제점이 있다.That is, conventionally, the manufacturing of a buried heterostructure laser diode (BH-LD), as shown in Figure 2, using a Si 3 N 4 film as an etching mask in the BH process mesa etching with Br-methanol-based or HBr-based etching solution After growing the current blocking layer. That is, as shown in FIG. 1, when both sides of the mesa are formed to be perpendicular to the DH substrate, an interference region is formed in the current blocking layers (a and b layers) grown on both sides of the mesa 10. A1 and b1 corresponding to a and b layers of the current blocking layer are formed to have a large angle of 120 °, but a2 and b2 have a small angle of 40 °. Since a2 and b2 have small angles, the thicknesses of a2 and b2 are thin so that a leakage current is generated through the regions of a2 and b2. Therefore, the shape (thickness) of the current blocking layer varies depending on the shape of the mesa, and the leakage current generated between the current blocking layer and the mesa is expressed as a function of the thickness and the doping concentration of the current blocking layer. It can be easily controlled by the MOCVD facility, but the thickness of the current blocking layer is very difficult to control, so interference between the mesa and the current blocking layer (a layer) 10 and the current blocking layer (a and b layer) 12 is achieved. This causes a problem that leakage current occurs.
본 발명은 상기와 같은 문제점을 해결하기 위하여 안출된 것으로, 본 발명의 목적은 매몰 헤테로구조체 레이저 다이오드의 메사를 형성하기 위해 HBr, H2O2, H2O 및 HCl을 일정한 비율로 혼합한 혼합 에칭액을 사용하여 에칭함으로써 메사의 상층부 폭이 하층부의 폭보다 넓게 형성되도록 하는 매몰 헤테로구조체인 레이저 다이오드의 메사를 형성시키는 방법을 제공하는데 있다.The present invention has been made to solve the above problems, an object of the present invention is to mix HBr, H 2 O 2 , H 2 O and HCl in a fixed ratio to form a mesa of the buried heterostructure laser diode The present invention provides a method of forming a mesa of a laser diode, which is a buried heterostructure, in which an upper layer portion of the mesa is formed wider than the lower layer portion by etching using an etching solution.
도 1은 종래의 DH-LD의 구조를 개략적으로 나타낸 도면이다.1 is a view schematically showing the structure of a conventional DH-LD.
도 2는 종래의 DH-LD의 제작공정을 나타낸 도면이다.2 is a view showing a manufacturing process of the conventional DH-LD.
도 3은 본 발명에 따른 DH-LD의 구조를 개략적으로 나타낸 도면이다.3 is a view schematically showing the structure of DH-LD according to the present invention.
도 4는 본 발명에 따른 DH-LD의 제작공정을 나타낸 도면이다.4 is a view showing a manufacturing process of DH-LD according to the present invention.
도 5는 본 발명에 따른 DH-LD의 메사의 형상을 개략적으로 나타낸 도면이다.5 is a view schematically showing the shape of the mesa of the DH-LD according to the present invention.
＜도면의 주요부분에 대한 부호의 설명><Explanation of symbols for main parts of the drawings>
100 : 메사 A : InP 기판100 Mesa A: InP substrate
B, C, D, E : 에피택셜층B, C, D, E: epitaxial layer
상기 목적을 달성하기 위하여 본 발명은 N형의 InP 기판위에 DH구조의 에피택셜층(B, C, D, E층)을 성장시키는 단계; Cap layer인 E층을 제거한 후 Si3N4막을 침착시키는 단계; Si3N4stripe를 형성한 후 HBr, H2O2, H2O 및 HCl계를 일정한 비율로 혼합한 에칭액을 이용하여 메사를 형성시키는 단계; 메사의 양측에 a(n-InP) 및 b(p-InP)층을 각각 성장시켜 전류차단층을 형성시키는 단계; 메사의 상부에 형성된 Si3N4stripe를 제거시킨 후 메사의 표면 및 전류차단층의 표면에 Ti/Pt/Au를 증착시키는 단계; 그리고 InP 기판을 연마하여 전체 두께를 100∼120㎛가 되도록 한 후 InP 기판에 Ti/Pt/Au를 증착시킨 후 400℃에서 어닐링하는 단계를 포함하는 매몰 헤테로구조체인 레이저 다이오드의 메사를 형성시키는 방법을 제공한다.In order to achieve the above object, the present invention comprises the steps of growing an epitaxial layer (B, C, D, E layer) of the DH structure on the N-type InP substrate; Removing the Cap layer E layer and then depositing a Si 3 N 4 film; Forming a mesa using an etching solution in which a Si 3 N 4 stripe is formed and a mixture of HBr, H 2 O 2 , H 2 O and HCl in a constant ratio; Forming a current blocking layer by growing a (n-InP) and b (p-InP) layers respectively on both sides of the mesa; Removing Ti 3 N 4 stripe formed on top of the mesa and then depositing Ti / Pt / Au on the surface of the mesa and the surface of the current blocking layer; And polishing the InP substrate to make the total thickness 100 to 120 μm, depositing Ti / Pt / Au on the InP substrate, and then annealing at 400 ° C. to form a mesa of the laser diode, which is a buried heterostructure. To provide.
본 발명에 의하면, N형의 InP 기판위에 1차성장으로 DH구조의 에피택셜층(B, C, D, E층)을 성장시킨 후 에피택셜층의 Cap layer인 E층을 제거한다. 상기 E층을 제거한 후 Si3N4막을 침착시키고, Si3N4stripe를 형성한 후 HBr, H2O2, H2O 및 HCl을 일정한 비율로 혼합한 에칭액을 이용하여 메사를 형성시키며, 상기 메사는 상층부가 하층부보다 넓은 면적을 갖도록 형성시키므로써 메사의 양측에 형성되는 전류차단층이 두껍게 형성되어 전류차단층과 메사가 인접하는 접촉부를 통해 누설전류가 발생하지 않도록 한다.According to the present invention, the epitaxial layers (B, C, D, E layers) of the DH structure are grown on the N-type InP substrate in the first growth, and then the E layer, which is the cap layer of the epitaxial layer, is removed. After removing the E layer, a Si 3 N 4 film was deposited, and a Si 3 N 4 stripe was formed to form a mesa using an etchant in which HBr, H 2 O 2 , H 2 O, and HCl were mixed at a constant ratio. The mesa is formed so that the upper layer has a larger area than the lower layer, so that a current blocking layer formed on both sides of the mesa is formed thick so that no leakage current is generated through the contact portion adjacent to the current blocking layer and the mesa.
이하 첨부된 도면을 참조하여 본 발명을 설명하면 다음과 같다.Hereinafter, the present invention will be described with reference to the accompanying drawings.
도 3은 본 발명에 따른 DH-LD의 구조를 개략적으로 나타낸 도면이고, 도 4는 본 발명에 따른 DH-LD의 제작공정을 나타낸 도면이고, 도 5는 본 발명에 따른 DH-LD의 메사의 형상을 개략적으로 나타낸 도면이다.Figure 3 is a view schematically showing the structure of the DH-LD according to the present invention, Figure 4 is a view showing the manufacturing process of the DH-LD according to the present invention, Figure 5 is a mesa of the DH-LD according to the present invention It is a figure which shows the shape schematically.
먼저, 도 3 내지 도 5를 참조하여, 매몰 헤테로구조체인 레이저 다이오드의 메사를 형성시키는 방법을 설명하면, 먼저, 도 4(a)에 나타낸 바와같이, N형의 InP 기판(A)위에 DH구조의 에피택셜층(B, C, D, E층)을 1차 성장시키게 된다. 즉, 에피택셜층(B, C, D층)은 DH구조로서 B, D층은 캐리어를 C층에 모아주게 되고 또한 발생되는 빛을 C층에 모아주는 역할을 함로써 C층에서 빛을 발산하게 된다. E층은 D층을 보호하는 역할을 한다. 상기 에피택셜층(B, C, D층)의 성장은 630℃에서 행해지고 양자우물의 두께는 8nm, 장벽(barrier)은 10nm, SCH(Separate Confinement Heterostructure)층은 0.2㎛가 되며 양자우물의 수는 8개가 된다.First, referring to FIGS. 3 to 5, a method of forming a mesa of a laser diode which is a buried heterostructure will be described. First, as shown in FIG. 4A, a DH structure is formed on an N-type InP substrate A. FIG. Epitaxial layers (B, C, D, and E layers) are grown first. In other words, the epitaxial layer (B, C, D layer) is a DH structure, the B, D layer collects carriers in the C layer and also collects the generated light in the C layer to emit light from the C layer. Done. The E layer serves to protect the D layer. The epitaxial layer (B, C, D layer) is grown at 630 ℃, the quantum well thickness is 8nm, the barrier (barrier) 10nm, SCH (Separate Confinement Heterostructure) layer is 0.2㎛ and the number of quantum wells There are eight.
상기 다음에는, 도 4(b)에서 나타낸 바와같이 Cap layer인 E층을 제거한 후 Si3N4막을 표면에 침착시키게 된다. 상기 다음에는 도 4(c)와 같이 사진석판술(Photoresist)에 의해 Si3N4막의 표면에 Si3N4stripe(e)를 형성한 후 HBr, H2O2, H2O 및 HCl을 일정한 비율로 혼합한 에칭액을 이용하여 메사(100)를 형성시키게 된다. 상기 에칭액은 HBr : H2O2: H2O : HCl을 1 : 1 : 10 : 1의 비율로 혼합하여 사용한다. 상기 메사(100)의 상부폭(g)은 1.6∼1.9㎛가 되고, 활성층의 폭(f)은 1.5∼1.8㎛가 된다. 도 3 및 도 5에 나타낸 바와같이, 메사(100)의 상부폭(g)이 활성층의 폭(f)보다 넓게 형성되도록 에칭함으로써 메사(100)의 하단부와 DH구조(B)와의 사이에 형성되는 메사각(X)은 약 85°가 된다. 상기 메사각(X)이 85°정도가 되도록 메사를 에칭한 후 메사(100)의 양측면에 전류차단층(a, b층)을 성장시킨다. 이때 전류차단층은 a층을 성장시킨 후 b층을 성장시키므로써 형성되며, 상기 b층의 상측부에 형성되는 성장각(Y)은 80°정도가 되므로 전류차단층(a, b층)의 두께는 두꺼워진다. 도 4(d)에 나타낸 바와같이 메사가 형성된 DH기판에 MOCVD 설비를 이용하여 2차 성장을 수행하며, 이때 성장온도는 590℃로 한다. 도 4의 (d)에 나타낸 a, b의 두께는 각각 1㎛, 1㎛가 된다.Next, as shown in FIG. 4 (b), the E 3 layer, which is a cap layer, is removed and then a Si 3 N 4 film is deposited on the surface. The Next, Fig. 4 (c) and as photolithography (Photoresist) a Si 3 N 4 film, the surface of Si 3 N 4 stripe (e) forming the after HBr, H 2 O 2, H 2 O and HCl in by The mesa 100 is formed using the etching solution mixed at a constant ratio. The etching solution is used by mixing HBr: H 2 O 2 : H 2 O: HCl in a ratio of 1: 1: 1: 10: 1. The upper width g of the mesa 100 is 1.6-1.9 탆, and the width f of the active layer is 1.5-1.8 탆. As shown in FIGS. 3 and 5, the upper width g of the mesa 100 is formed between the lower end of the mesa 100 and the DH structure B by etching so as to be formed wider than the width f of the active layer. The mesa angle X is about 85 degrees. After the mesa is etched so that the mesa angle (X) is about 85 °, the current blocking layers (a, b layers) are grown on both sides of the mesa (100). At this time, the current blocking layer is formed by growing the a layer and then growing the b layer, and the growth angle (Y) formed at the upper side of the b layer is about 80 °, so that the current blocking layer (a, b layer) The thickness becomes thick. As shown in FIG. 4 (d), secondary growth is performed on the DH substrate on which the mesa is formed by using a MOCVD facility, and the growth temperature is 590 ° C. FIG. The thickness of a and b shown to Fig.4 (d) becomes 1 micrometer and 1 micrometer, respectively.
이어서 도 4(e)에 나타낸 바와같이 메사(100)의 마지막층에 형성되어 있는 Si3N4stripe(e)를 제거한 후, 메사(100) 및 전류차단층(b층)의 상부면에 c, d층을 성장시키며, 이때 두께는 각각 2㎛, 0.3㎛가 된다. 상기 다음에는 메사의 마지막층인 E층위에 Ti/Pt/Au를 증착시키게 된다. 상기 다음에는 InP 기판을 연마하여 전체 두께를 100∼120㎛가 되도록 한 후 InP 기판에 Ti/Pt/Au를 증착시킨 후 400℃에서 어닐링(annealing)하게 된다.Subsequently, as shown in FIG. 4E, after removing the Si 3 N 4 stripe (e) formed on the last layer of the mesa 100, c is formed on the upper surface of the mesa 100 and the current blocking layer (b layer). , d layers are grown, and the thicknesses are 2 μm and 0.3 μm, respectively. Next, Ti / Pt / Au is deposited on the E layer, which is the last layer of mesa. Next, the InP substrate is polished to have a total thickness of 100 to 120 μm, and Ti / Pt / Au is deposited on the InP substrate, followed by annealing at 400 ° C. FIG.
이상 설명에서 알 수 있는 바와 같이, 본 발명은 N형의 InP 기판위에 1차성장으로 DH구조의 에피택셜층(B, C, D, E층)을 성장시킨 후 에피택셜층의 Cap layer인 E층을 제거한다. 상기 E층을 제거한 후 Si3N4막을 침착시키고, Si3N4stripe를 형성한 후 HBr, H2O2, H2O 및 HCl을 일정한 비율로 혼합한 에칭액을 이용하여 메사를 형성시키며, 상기 메사는 상층부가 하층부보다 넓은 면적을 갖도록 형성시키므로써 메사의 양측에 형성되는 전류차단층이 두껍게 형성되어 전류차단층과 메사가 인접하는 접촉부를 통해 누설전류가 발생하지 않도록 한다.As can be seen from the above description, in the present invention, the epitaxial layer (B, C, D, E layer) of the DH structure is grown on the N-type InP substrate as the first growth, and then E is the cap layer of the epitaxial layer. Remove the layer. After removing the E layer, a Si 3 N 4 film was deposited, and a Si 3 N 4 stripe was formed to form a mesa using an etchant in which HBr, H 2 O 2 , H 2 O, and HCl were mixed at a constant ratio. The mesa is formed so that the upper layer has a larger area than the lower layer, so that a current blocking layer formed on both sides of the mesa is formed thick so that no leakage current is generated through the contact portion adjacent to the current blocking layer and the mesa.
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