KR100286318B1 - Structure of liquid crystal display - Google Patents
Structure of liquid crystal display Download PDFInfo
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- KR100286318B1 KR100286318B1 KR1019990007145A KR19990007145A KR100286318B1 KR 100286318 B1 KR100286318 B1 KR 100286318B1 KR 1019990007145 A KR1019990007145 A KR 1019990007145A KR 19990007145 A KR19990007145 A KR 19990007145A KR 100286318 B1 KR100286318 B1 KR 100286318B1
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- liquid crystal
- crystal display
- upper substrate
- display device
- light
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 239000010410 layer Substances 0.000 claims abstract description 28
- 239000011159 matrix material Substances 0.000 claims abstract description 21
- 238000002347 injection Methods 0.000 claims abstract description 14
- 239000007924 injection Substances 0.000 claims abstract description 14
- 239000010409 thin film Substances 0.000 claims abstract description 12
- 230000005540 biological transmission Effects 0.000 claims abstract description 7
- 239000010408 film Substances 0.000 claims description 24
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000007796 conventional method Methods 0.000 abstract 1
- 239000011229 interlayer Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000010453 quartz Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133512—Light shielding layers, e.g. black matrix
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
Abstract
본 발명은 액정표시장치의 구조에 관한 것으로, 종래 마이크로렌즈를 이용한 방법은 혁신적으로 개구율을 증가시킬 수 있었으나, 마이크로렌즈 어레이의 제작이 어려울 뿐만 아니라 특히 상부기판과 하부기판의 정렬이 어려운 문제점으로 인해 상부기판과 하부기판의 오정렬이 발생하면 마이크로렌즈를 통해 집속된 빛이 블랙 매트릭스로 조사되어 오히려 화면의 밝기가 감소되는 문제점이 있었다. 따라서, 본 발명은 빛으로부터 박막트랜지스터의 활성층을 보호하는 블랙 매트릭스가 형성된 하부기판과 상부기판 사이에 액정주입층이 형성되어 이루어지는 액정표시장치의 구조에 있어서, 상기 상부기판 상에 형성되어 하부기판의 블랙 매트릭스에 조사되는 빛을 투과영역으로 굴절시키는 홀로그램 패턴을 포함하여 구성되는 액정표시장치의 구조를 제공함으로써, 홀로그램 패턴을 사용하여 화소구조상 투과되지 못하는 빛을 굴절시켜 투과영역으로 조사되도록 함에 따라 종래에 비해 개구율을 획기적으로 증가시킬 수 있을 뿐만 아니라 종래 마이크로 렌즈에 비해 제작이 간단하여 수율을 저감시키지 않고도 개구율을 높임과 아울러 생산원가를 절감할 수 있는 효과가 있다.The present invention relates to a structure of a liquid crystal display device, but the conventional method using a microlens has been able to innovatively increase the aperture ratio, but it is difficult to manufacture a microlens array and in particular due to the difficulty in aligning an upper substrate and a lower substrate. When the misalignment of the upper substrate and the lower substrate occurs, the light focused by the microlens is irradiated to the black matrix, thereby reducing the brightness of the screen. Accordingly, the present invention provides a liquid crystal display device in which a liquid crystal injection layer is formed between a lower substrate and an upper substrate on which a black matrix is formed to protect the active layer of the thin film transistor from light, the upper substrate being formed on the upper substrate. By providing a structure of a liquid crystal display device including a hologram pattern for refracting the light irradiated to the black matrix into the transmission region, by using the hologram pattern to refract light that is not transmitted through the pixel structure to be irradiated to the transmission region, Compared with the conventional micro lens, the aperture ratio can be dramatically increased, and the manufacturing is simpler than the conventional microlenses, thereby increasing the aperture ratio and reducing the production cost without reducing the yield.
Description
본 발명은 액정표시장치의 구조에 관한 것으로, 특히 다결정 실리콘 박막트랜지스터(poly-silicon thin film transistor : TFT)를 이용한 액정모듈(LCD module)의 블랙 매트릭스(black matrix)에 조사되는 빛을 이용할 수 있도록 한 액정표시장치의 구조에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure of a liquid crystal display device, and in particular, to use light irradiated to a black matrix of a LCD module using a poly-silicon thin film transistor (TFT). It relates to the structure of a liquid crystal display device.
종래 액정표시장치의 구조를 첨부한 도면을 참조하여 상세히 설명하면 다음과 같다.The structure of the conventional liquid crystal display will be described in detail with reference to the accompanying drawings.
도1은 종래 액정표시장치의 화소부를 개략적으로 보인 단면도로서, 이에 도시한 바와같이 하부 석영기판(1)상의 일부에 형성된 반도체층(2)과; 상기 반도체층(2)의 상부에 형성된 게이트절연막(3)과; 상기 게이트절연막(3)상의 일부에 이격 형성된 게이트라인(4) 및 공통전극라인(5)과; 상기 게이트라인(4), 공통전극라인(5) 및 게이트절연막(3)을 포함한 하부 석영기판(1)의 상부에 형성된 제1층간절연막(6)과; 상기 제1층간절연막(6)상의 일부에 이격 형성되어 상기 반도체층(2)과 선택적으로 접속되는 제1,제2데이터라인(7,8)과; 상기 제1,제2데이터라인(7,8)을 포함한 제1층간절연막(6)의 상부에 형성된 제2층간절연막(9)과; 상기 제2층간절연막(9)상의 일부에 형성되어 상기 게이트라인(4), 공통전극라인(5) 및 제1데이터라인(7)에 조사되는 빛을 차단하는 블랙 매트릭스(10)와; 상기 블랙 매트릭스를 포함한 제2층간절연막(9) 상부에 형성된 평탄화막(11)과; 상기 평탄화막(11)상의 일부에 형성되어 상기 제2층간절연막(9) 및 평탄화막(11)을 통해 상기 제2데이터라인(8)에 접속되는 제1화소전극(12)과; 상기 제1화소전극(12)을 포함하는 평탄화막(11)의 상부에 형성된 제1배향막(13)과; 상기 제1배향막(13)의 상부에 액정이 주입되어 형성된 액정주입층(14)과; 상기 액정주입층(14)의 상부에 적층 형성된 제2배향막(15) 및 제2화소전극(16)과; 상기 제2화소전극(16)의 상부에 형성된 상부 석영기판(17)으로 구성된다.1 is a cross-sectional view schematically showing a pixel portion of a conventional liquid crystal display device, as shown therein; a semiconductor layer 2 formed on a portion of a lower quartz substrate 1; A gate insulating film 3 formed on the semiconductor layer 2; A gate line 4 and a common electrode line 5 spaced apart from each other on the gate insulating film 3; A first interlayer insulating film (6) formed on the lower quartz substrate (1) including the gate line (4), common electrode line (5) and gate insulating film (3); First and second data lines (7, 8) formed on a portion of the first interlayer insulating film (6) and selectively connected to the semiconductor layer (2); A second interlayer insulating film 9 formed on the first interlayer insulating film 6 including the first and second data lines 7 and 8; A black matrix 10 formed on a portion of the second interlayer insulating film 9 to block light emitted to the gate line 4, the common electrode line 5, and the first data line 7; A planarization film 11 formed on the second interlayer insulating film 9 including the black matrix; A first pixel electrode 12 formed on a portion of the planarization film 11 and connected to the second data line 8 through the second interlayer insulating film 9 and the planarization film 11; A first alignment layer 13 formed on the planarization layer 11 including the first pixel electrode 12; A liquid crystal injection layer 14 formed by injecting liquid crystal on the first alignment layer 13; A second alignment layer 15 and a second pixel electrode 16 stacked on the liquid crystal injection layer 14; The upper quartz substrate 17 is formed on the second pixel electrode 16.
한편, 도2는 상기한 바와같은 액정표시장치의 화소부를 개략적으로 보인 평면도이다.2 is a plan view schematically illustrating the pixel unit of the liquid crystal display device as described above.
상기한 바와같은 종래의 액정표시장치는 하부 및 상부 석영기판(1,17) 사이에 액정주입층(14)이 형성된 구조이며, 하부 석영기판(1) 상에는 다결정실리콘과 같은 반도체물질로 반도체층(2)을 형성하고, 실리콘산화막과 같은 절연물질로 게이트절연막(3)을 형성한 후, 게이트라인(4)과 공통전극라인(5)을 형성하고, 상기 반도체층(2)에 제1,제2데이터라인(7,8)을 선택적으로 접속시키는 제1층간절연막(6)을 형성하며, 상기 게이트라인(4), 공통전극라인(5) 및 제1데이터라인(7)에 조사되는 빛을 차단하는 블랙 매트릭스(10)를 제2층간절연막(9) 상부에 형성하고, 상기 제2데이터라인(8)에 ITO(indium-tin-oxide)와 같은 제1화소전극(12)을 선택적으로 접속시키는 제2층간절연막(9) 및 평탄화막(11)을 형성하며, 상부 석영기판(17) 상에는 공통전극인 ITO와 같은 제2화소전극(16)을 형성한다.As described above, the conventional liquid crystal display device has a structure in which a liquid crystal injection layer 14 is formed between the lower and upper quartz substrates 1 and 17, and the semiconductor layer is formed of a semiconductor material such as polycrystalline silicon on the lower quartz substrate 1. 2), the gate insulating film 3 is formed of an insulating material such as a silicon oxide film, and then the gate line 4 and the common electrode line 5 are formed. A first interlayer insulating film 6 for selectively connecting the two data lines 7 and 8 is formed, and the light irradiated to the gate line 4, the common electrode line 5, and the first data line 7 is irradiated. A blocking black matrix 10 is formed on the second interlayer insulating film 9, and the first pixel electrode 12 such as indium-tin-oxide (ITO) is selectively connected to the second data line 8. The second interlayer insulating film 9 and the planarization film 11 are formed, and the second pixel electrode 16 such as ITO, which is a common electrode, is formed on the upper quartz substrate 17. The.
따라서, 픽셀 스위칭(pixel switching) 소자인 박막트랜지스터의 동작에 따라 하부 및 상부 석영기판(1,17)에 전압이 인가되면, 액정이 주입되어 형성된 액정주입층(14)이 구동된다.Therefore, when voltage is applied to the lower and upper quartz substrates 1 and 17 according to the operation of the thin film transistor, which is a pixel switching element, the liquid crystal injection layer 14 formed by injecting the liquid crystal is driven.
이때, 박막트랜지스터의 활성층인 폴리실리콘박막은 빛의 조사에 의해 누설전류가 증가하는 특성을 나타내므로, 블랙 매트릭스(10)를 형성하여 조사되는 빛으로부터 게이트라인(4), 공통전극라인(5) 및 제1데이터라인(7)을 보호한다.In this case, since the polysilicon thin film, which is an active layer of the thin film transistor, exhibits a characteristic of increasing leakage current by irradiation of light, the gate line 4 and the common electrode line 5 are formed from the light irradiated by forming the black matrix 10. And protect the first data line 7.
상기한 바와같은 종래 액정표시장치에서 박막트랜지스터의 동작에 따른 빛의 광로를 도식화하여 도3a 및 도3b에 나타내었다.3A and 3B show an optical path of light according to the operation of the thin film transistor in the conventional liquid crystal display device as described above.
먼저, 도3a에서 나타난 바와같이 블랙 매트릭스(21)가 형성된 영역과 도면에 도시하지는 않았지만 스토리지 커패시터가 형성되는 영역은 액정이 구동되어도 빛이 통과하지 못하는 영역이며, 여기서 미설명부호 '22'는 하부기판, '23'은 액정주입층 그리고 '24'는 상부기판이다.First, as shown in FIG. 3A, a region in which the black matrix 21 is formed and a region in which the storage capacitor is formed, although not shown in the drawing, are regions in which light does not pass even when the liquid crystal is driven. The substrate '23' is the liquid crystal injection layer and '24' is the upper substrate.
한편, 전체 면적대비 빛이 통과하는 영역의 비율을 개구율이라 하며, 화면의 밝기에 직접적으로 영향을 준다. 이와같은 개구율을 증가시키기 위하여 설계의 최적화를 통해 블랙 매트릭스(21)와 스토리지 커패시터가 형성되는 영역의 면적을 최소화하고 있으나, 이는 한계에 부딪치게 되었다.On the other hand, the ratio of the light passing area to the total area is called the opening ratio, and directly affects the brightness of the screen. In order to increase the aperture ratio, the area of the region where the black matrix 21 and the storage capacitor are formed through the optimization of the design is minimized, but this has encountered limitations.
따라서, 최근에 개구율을 향상시키기 위하여 도3b에 나타난 바와같이 마이크로렌즈(microlens)를 이용하는 방법이 제안되었다.Therefore, recently, a method of using microlens has been proposed as shown in Fig. 3B to improve the aperture ratio.
즉, 액정주입층(23)으로부터 일정한 위치의 상부기판(24) 상에 화소크기의 마이크로렌즈 어레이(30)를 형성하여 광효율을 증대시킨 것이다.In other words, the pixel size microlens array 30 is formed on the upper substrate 24 at a predetermined position from the liquid crystal injection layer 23 to increase the light efficiency.
따라서, 블랙 매트릭스(21)와 스토리지 커패시터가 형성된 영역에 조사될 직선광은 마이크로렌즈를 통해 투과영역으로 굴절되므로, 실제 개구율은 고정된 상태지만 투과율을 높여 개구율의 증가를 꾀한 것이다.Accordingly, since the linear light to be irradiated to the region where the black matrix 21 and the storage capacitor are formed is refracted into the transmission region through the microlens, the actual aperture ratio is fixed, but the transmittance is increased by increasing the transmittance.
그러나, 상기한 바와같은 마이크로렌즈를 이용한 방법은 혁신적으로 개구율을 증가시킬 수 있었으나, 마이크로렌즈 어레이의 제작이 어려울 뿐만 아니라 특히 상부기판과 하부기판의 정렬이 어려운 문제점으로 인해 상부기판과 하부기판의 오정렬이 발생하면 마이크로렌즈를 통해 집속된 빛이 블랙 매트릭스로 조사되어 오히려 화면의 밝기가 감소되는 문제점이 있었다.However, although the method using the microlenses as described above can innovatively increase the aperture ratio, it is difficult to manufacture the microlens array and in particular, the misalignment of the upper substrate and the lower substrate due to the difficulty in aligning the upper substrate and the lower substrate. When this occurs, the light focused through the microlens is irradiated to the black matrix, so that the brightness of the screen is reduced.
본 발명은 상기한 바와같은 종래의 문제점을 해결하기 위하여 창안한 것으로, 본 발명의 목적은 다결정실리콘 박막트랜지스터를 이용한 액정 모듈의 개구율을 증가시킬 수 있는 액정표시장치의 구조를 제공하는데 있다.The present invention has been made to solve the conventional problems as described above, an object of the present invention is to provide a structure of a liquid crystal display device that can increase the aperture ratio of the liquid crystal module using a polysilicon thin film transistor.
도1은 종래 액정표시장치의 화소부를 개략적으로 보인 단면도.1 is a cross-sectional view schematically showing a pixel portion of a conventional liquid crystal display device.
도2는 도1의 화소부를 개략적으로 보인 평면도.FIG. 2 is a plan view schematically illustrating the pixel portion of FIG. 1; FIG.
도3a는 도1에 있어서, 박막트랜지스터의 동작에 따른 빛의 광로를 보인 예시도.Figure 3a is an exemplary view showing an optical path of the light according to the operation of the thin film transistor in Figure 1;
도3b는 종래 기술의 다른 예로써, 마이크로 렌즈를 이용함에 따른 빛의 광로를 보인 예시도.Figure 3b is another example of the prior art, showing an optical path of light by using a micro lens.
도4는 본 발명의 일 실시예를 개략적으로 보인 단면도.Figure 4 is a cross-sectional view schematically showing an embodiment of the present invention.
도5는 도4의 화소부를 개략적으로 보인 평면도.FIG. 5 is a plan view schematically illustrating the pixel portion of FIG. 4; FIG.
도6은 본 발명의 다른 실시예를 개략적으로 보인 단면도.Figure 6 is a schematic cross-sectional view of another embodiment of the present invention.
***도면의 주요부분에 대한 부호의 설명****** Explanation of symbols for main parts of drawing ***
41:하부기판 42:블랙 매트릭스41: lower substrate 42: black matrix
43:액정주입층 44:홀로그램 패턴43: liquid crystal injection layer 44: hologram pattern
45:평탄화막 46:편광판45: flattening film 46: polarizing plate
47:투명전극 48:상부기판47: transparent electrode 48: upper substrate
상기한 바와같은 본 발명의 목적을 달성하기 위한 액정표시장치의 구조는 빛으로부터 박막트랜지스터의 활성층을 보호하는 블랙 매트릭스가 형성된 하부기판과 상부기판 사이에 액정주입층이 형성되어 이루어지는 액정표시장치의 구조에 있어서, 상기 상부기판 상에 형성되어 블랙 매트릭스에 조사되는 빛을 투과영역으로 굴절시키는 홀로그램 패턴을 포함하여 구성되는 것을 특징으로 한다.The structure of the liquid crystal display device for achieving the object of the present invention as described above is the structure of the liquid crystal display device is formed between the lower substrate and the upper substrate on which the black matrix is formed to protect the active layer of the thin film transistor from light. The method may include a hologram pattern formed on the upper substrate and refracting light irradiated to the black matrix into a transmission region.
상기한 바와같은 본 발명에 의한 액정표시장치의 구조를 첨부한 도면을 참조하여 상세히 설명하면 다음과 같다.The structure of the liquid crystal display according to the present invention as described above will be described in detail with reference to the accompanying drawings.
도4는 본 발명의 일 실시예를 개략적으로 보인 단면도로서, 이에 도시한 바와같이 박막트랜지스터(미도시) 및 블랙 매트릭스(42)가 형성된 하부기판(41)과; 투과되는 빛의 굴절율을 고려하여 상기 블랙 매트릭스(42)와 정렬되어 상부기판(48) 상에 형성되는 홀로그램 패턴(44)과; 상기 홀로그램 패턴(44)이 형성된 상부기판(48)을 평탄화하는 평탄화막(45)과; 상기 평탄화막(45) 상에 적층 형성된 편광판(46) 및 상부 투명전극(47)과; 상기 상부기판(48)의 상부 투명전극(47) 및 하부기판(41)의 사이에 액정이 주입되어 형성된 액정주입층(43)으로 구성된다.4 is a cross-sectional view schematically showing an embodiment of the present invention, and as shown therein, a lower substrate 41 on which a thin film transistor (not shown) and a black matrix 42 are formed; A hologram pattern 44 arranged on the upper substrate 48 in alignment with the black matrix 42 in consideration of the refractive index of transmitted light; A planarization film 45 for planarizing the upper substrate 48 on which the hologram pattern 44 is formed; A polarizing plate 46 and an upper transparent electrode 47 stacked on the planarization layer 45; The liquid crystal injection layer 43 is formed by injecting a liquid crystal between the upper transparent electrode 47 and the lower substrate 41 of the upper substrate 48.
상기한 바와같은 본 발명의 일 실시예는 블랙 매트릭스(42)에 조사되는 빛을 홀로그램 패턴(44)을 통해 굴절시켜 투과영역에 조사되도록 한다. 이때, 홀로그램 패턴(44)을 통해 굴절되어 조사되는 빛의 촛점을 맞추기 위해서는 투과되는 빛의 각도가 한계각 이하로 적어야 하므로, 굴절되는 각을 최소화하기 위해서 홀로그램 패턴(44)의 간격을 3㎛ 이상으로 하여야 한다.As described above, the embodiment of the present invention refracts the light irradiated to the black matrix 42 through the hologram pattern 44 so as to be irradiated to the transmission region. At this time, in order to focus the light that is refracted and irradiated through the hologram pattern 44, the angle of transmitted light should be less than or equal to the limit angle, so that the interval between the hologram patterns 44 is 3 μm or more in order to minimize the angle of refraction. Should be done.
따라서, 홀로그램 패턴(44)을 게이트라인과 평행하게 하면 원하는 결과를 얻을 수 없게 되므로, 도5에 도시한 바와같이 홀로그램 패턴(44)과 게이트라인(4)을 서로 경사지게 한다. 여기서, 도5의 미설명 부호(4,5,7,10)는 도2의 부호와 동일하게 표기하였으므로, 자세한 설명을 생략하기로 한다.Therefore, if the hologram pattern 44 is parallel to the gate line, the desired result cannot be obtained. As shown in FIG. 5, the hologram pattern 44 and the gate line 4 are inclined to each other. Here, the unexplained reference numerals 4, 5, 7, and 10 of FIG. 5 are the same as those of FIG. 2, and thus detailed description thereof will be omitted.
한편, 상기 편광판(46)은 광학적으로 계산된 두께로 형성하여 조사되는 빛의 굴절각도를 원하는 특성 내에서 선택할 수 있도록 하는 것이 바람직하다.On the other hand, the polarizing plate 46 is preferably formed to an optically calculated thickness to be able to select the refractive angle of the irradiated light within the desired characteristics.
그리고, 도6은 본 발명의 다른 실시예를 개략적으로 보인 단면도로서, 이에 도시한 바와같이 도4의 본 발명의 일 실시예와는 다르게 투명 전극(미도시)이 형성된 상부기판(48)과 블랙 매트릭스(42)가 형성된 하부기판(41)의 사이에 액정주입층(43)이 형성되며, 상부기판(48)의 노출된 면에 순차적으로 홀로그램 패턴(44), 평탄화막(45) 및 편광판(46)을 형성한 것으로, 상기 본 발명의 일 실시예와는 다르게 상부기판(48)의 투명 전극을 광학적으로 계산된 두께로 형성하여 조사되는 빛의 굴절각도를 원하는 특성 내에서 선택할 수 있도록 한다.6 is a cross-sectional view schematically showing another embodiment of the present invention. As shown in FIG. 6, the upper substrate 48 and the black on which the transparent electrode (not shown) is formed are different from the embodiment of the present invention of FIG. 4. The liquid crystal injection layer 43 is formed between the lower substrate 41 on which the matrix 42 is formed, and the hologram pattern 44, the planarization film 45, and the polarizing plate are sequentially formed on the exposed surface of the upper substrate 48. 46), unlike the embodiment of the present invention, the transparent electrode of the upper substrate 48 is formed to have an optically calculated thickness so that the refractive angle of the irradiated light can be selected within desired characteristics.
상기한 바와같은 본 발명에 의한 액정표시장치의 구조는 홀로그램 패턴을 사용하여 화소구조상 투과되지 못하는 빛을 굴절시켜 투과영역으로 조사되도록 함에 따라 종래에 비해 개구율을 획기적으로 증가시킬 수 있을 뿐만 아니라 종래 마이크로 렌즈에 비해 제작이 간단하여 수율을 저감시키지 않고도 개구율을 높임과 아울러 생산원가를 절감할 수 있는 효과가 있다.As described above, the structure of the liquid crystal display device according to the present invention uses a hologram pattern to refract light that is not transmitted through the pixel structure to be irradiated to the transmission area, thereby significantly increasing the aperture ratio as compared with the conventional art. Compared to the lens, it is simpler to manufacture, thereby increasing the aperture ratio and reducing the production cost without reducing the yield.
Claims (5)
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