KR100268526B1 - Processing apparatus using gas - Google Patents

Abstract

The vertical heat treatment apparatus is provided with a heat treatment section for performing heat treatment using gas on a semiconductor wafer, and a gas supply section for supplying gas to the heat treatment section. The gas supply unit includes a plurality of gas control devices including a plurality of gas flow rate control devices, a gas control device storage device for accommodating these gas controller devices, and a plurality of electrical parts installed outside the storage container and attached to the gas controller device. And an electric parts container for storing a plurality of electric parts, and the plurality of gas flow rate control devices are integrated by block joints.

Description

Gas-Processing Equipment

1 is a perspective view showing a vertical heat treatment apparatus to which the present invention is applied.

FIG. 2 is a schematic diagram showing a gas supply unit in the apparatus of FIG.

3 is a diagram showing a unit of the gas control device and an electric component unit in the first FIG. Device.

4 is a cross-sectional view showing another embodiment of the mass flow controller included in the gas control mechanism unit.

5 is a perspective view showing another example of a gas control mechanism unit.

6 is a cross-sectional view showing another embodiment of the mass flow controller included in the gas control unit.

7 is a perspective view illustrating a plurality of integrated massflow controllers.

8 (a) to 8 (d) are schematic diagrams showing the structure of a block joint used in the massflow controller of FIG.

9 is a perspective view showing a modification of FIG. 7 of the massflow controller group.

* Explanation of symbols for main parts of the drawings

10: heat treatment unit 11: heat treatment furnace

12: wafer boat 13: elevator

14 wafer cassette 15 transfer mechanism

16 cassette holding mechanism 17 conveying mechanism

20: gas supply exhaust 21: vacuum exhaust mechanism

22 gas control unit 22a pipe

23: electric component unit 24: gas source unit

25 gas supply pipe 26 exhaust pipe

27: gas cylinder 28a: hand valve

29: check valve 30: pressure switch

31 case 32 pressure detection plate

33: Wheatstone bridge circuit 34: Resistance

35,53 Relay 40 Mass Flow Controller

41: flow rate detection unit 42: flow rate control unit

43: signal processor 44: the base

50: shutoff valve 51: air control unit

52: solenoid valve 54: quench tube

61 injector 62 reaction tube

63: heater 65: gas discharge boat

70: controller 71: heater

73,74 uptake 85 cable

131: entrance 132: exit

133: Euro 133a: circuit

138a: blocking member 139: valve seat

140: compression spring 141: valve body

142: actuator 143: rectifying layer

144: pipe 146a, 146b: temperature sensor

147a, 147b: Power 150,160: Joint

161: connection port 162: mounting hole

163: mounting bolt 245a, 245b: heating wire

RG1, RG2: Pressure reducing valves F1, F2: Filter

W: Wafer

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a processing apparatus using a gas such as a heat treatment apparatus of a semiconductor wafer, and more particularly, to a processing apparatus including a gas control mechanism unit in which a flow rate control apparatus for controlling a gas flow rate is combined.

In the semiconductor wafer manufacturing process, the work area is generally divided into a clean room and a maintenance room, and a wafer transfer system is disposed in the clean room, and a gas supply system and an exhaust system are installed in the maintenance room in a heat treatment apparatus. .

Thus, in the case of forming or etching the wafer, a gas cylinder having a high risk of retardation, flammability, or toxicity is used. For example, a gas cylinder is installed outdoors, and from there, the gas pipe in the maintenance room is opened. It is supplied to the reaction tube of a processing apparatus through the process.

On the other hand, in the recent semiconductor manufacturing facilities, the number of processing processes is increasing and complicated, so that the whole system tends to be compact, and the gas for compacting the gas supply system, ease of maintenance, and general purpose of the system, etc. It has been considered to form a gas control mechanism unit in which the control mechanism is integrated into a unit, and this gas control mechanism unit is also considered to be installed integrally with an exhaust system unit close to the heat treatment furnace or disposed above the heat treatment furnace. have.

The gas control mechanism unit collects and stores a filter, a pressure switch, a mass flow controller (flow control device), a shutoff valve, a check valve, and an open / close valve in a pipe, and connects an air inlet pipe and an exhaust pipe to the pipe. Air flows through the body, for example, to prevent the leakage of gas from the unit into the maintenance room. The gas control mechanism unit has a complex three-dimensional structure including a plurality of piping systems to cope with various heat treatments. The mass flow controller includes a flow rate detection sensor for detecting a gas flow rate, a gas flow rate regulator, and a control mechanism for controlling the gas flow rate regulation mechanism in accordance with the flow rate detection signal of the flow rate detection sensor. Since it becomes a central part, it is necessary to perform a lot of regular maintenance and inspection work compared with other apparatus.

Therefore, in the conventional mass flow controller, since the gas supply pipe is directly connected to the inlet and the outlet of the gas, there is little freedom of piping and it has a flat piping structure. For this reason, there is a limit to the compactness of the gas control equipment unit, which becomes quite large. Therefore, when the maintenance of the equipment on the processing vessel side is not considered, the gas control equipment unit must be installed at a location away from the processing vessel. There is also a problem that the occupied area of the entire processing apparatus is large.

In addition, electrical components such as electrical contacts, integrated circuits, or connector parts exist in the gas control unit. For example, some pressure switches are provided with a pressure signal output function and a switch function. In this case, the pressure switch is equipped with a signal output circuit and a micro switch or relay.

The mass flow controller is provided with a processing circuit for outputting a flow control signal in accordance with the flow detection value, and the shutoff valve has a solenoid valve for supplying air of shut-off action. Therefore, when flammable gas leaks from the connection between the gas controller and the gas, the leaked gas is exhausted from the exhaust duct because air flows through the body of the gas controller, but the explosion temperature is partially formed. In this state, if a spark occurs due to a contact of a pressure switch, a contact of an air control solenoid valve of a shutoff valve, or a poor connection of an electric circuit, a small explosion occurs in extreme cases. Moreover, even if it is not flammable gas, even if retardant gas, such as oxygen, leaks, it may ignite from a spark or a superheated part. If such a small explosion occurs within the ignition gas control unit, the pipe may be destroyed or the gas control device may be damaged by this.

It is an object of the present invention to provide a processing apparatus capable of compacting the gas supply system in the first aspect.

It is a second object of the present invention to provide a processing apparatus using a gas capable of preventing an accident due to sparking of an electrical component.

According to a first aspect of the present invention, there is provided a gas treatment unit which performs a specific treatment with a gas on a target object; A gas supply section for supplying gas to the gas processing section, the gas supply section includes a plurality of gas controllers including a plurality of gas flow rate control devices, a plurality of gas controllers, a sealed structure, and a gas introduced therein; And a gas flow through the exhaust gas, and includes a gas control device storage chamber having a tubular body, and a plurality of electrical components provided outside the storage chamber and attached to the gas control device to integrate the plurality of gas flow control devices. There is provided a treatment apparatus using a gas present.

According to a second aspect of the present invention, there is provided a gas processing unit for performing a specific treatment by a gas of a target object, a gas supply unit for supplying gas to the gas processing unit, and the gas supply unit includes a plurality of gas control devices, and A gas control device storage container for containing a gas control device, having a sealed structure, having a gas introduction pipe and a gas discharge pipe, and using a gas flowing therethrough in a closed state; and outside the gas control device storage container A processing apparatus using a gas provided in the gas control apparatus and provided with a plurality of electrical parts is provided.

According to a third aspect of the present invention, there is provided a gas treatment unit which performs a specific treatment by an object gas; A gas supply section for supplying gas to the gas processing section, the gas supply section accommodates a plurality of gas controllers and these gas controllers, has a sealed structure, is provided with a gas introduction pipe and a gas discharge pipe, Among them, a gas controller storage container using gas that flows through the gas, and a plurality of electrical components provided outside the gas controller storage container and accommodating the plurality of electrical components attached to the gas controller device. A processing apparatus using a gas having a container is provided.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a perspective view showing the configuration of a vertical heat treatment apparatus for a semiconductor wafer to which the present invention is applied. This apparatus consists of the heat processing part 10 and the gas supply and exhaust part 20 provided in the rear end of the heat processing part.

The heat treatment unit 10 includes a cylindrical heat treatment furnace 11 that is provided almost vertically. Below the heat treatment furnace 11, the boat elevator 13 which moves up and down the wafer boat 12 in which the some semiconductor wafer is mounted is provided. The boat elevator 13 then rolls or unrolls the wafer boat 12 on which the wafer is mounted on the heat treatment furnace 11.

In front of the boat elevator 13, the transfer mechanism 15 which transfers a semiconductor wafer between the wafer cassette 14 and the wafer boat 12 is provided. Moreover, above this transfer mechanism 15, the cassette accommodating mechanism 16 which accommodates the some wafer cassette 14, and the conveyance mechanism 17 which conveys the wafer cassette 14 are provided.

The gas supply and exhaust unit 20 includes a vacuum exhaust mechanism 21 for evacuating the inside of the heat treatment furnace 11 and a gas source unit 24 accommodating each gas source provided adjacent to the vacuum exhaust mechanism 21. And a gas control device unit 22 having a plurality of controllers for controlling gases such as purge gas, process gas, and carrier gas supplied from the gas source unit 24 into the heat treatment furnace 11. An electrical component unit 23 having a plurality of electrical components therefor is provided. The heat treatment furnace 11 is provided through the gas supply pipe 25 through the controller unit 22 from the gas source unit 24 while exhausting the inside of the heat treatment furnace 11 through the exhaust pipe 26 by the vacuum exhaust port 21. By supplying the processing gas into the inside), the process gas is subjected to a reduced pressure atmosphere with a predetermined gas pressure, and heat treatment such as a film forming process is performed in the atmosphere.

Next, the gas supply source 20 will be described with reference to FIG.

The gas source unit 24 is provided with a plurality of gas cylinders 27 (only one is shown in FIG. 2), and these gas cylinders 27 are hydrogen gas, oxygen, gas of silane system, halogen gas, etc., respectively. Process gas, carrier gas and purge gas are sealed under high pressure.

The gas supply pipe 25 is connected to each gas cylinder 27 via a primary pressure reducing valve RG1 for primary pressure reduction of a high-pressure process gas. The gas supply pipe 25 is made of, for example, stainless steel, and a hand valve 28a and a secondary pressure reducing valve RG2 are inserted into the gas supply pipe 25, and at the downstream thereof, for example, as a gas controller. The filter F1, the pressure switch 30, the mass flow controller 40, the shutoff valve 50, the check valve 29, the hand valve 28b, and the filter F2 are provided in this order. These gas controllers are housed in the tube body 22a to constitute the gas controller unit 22.

On the downstream side of the gas control device unit 22, an injector 61 made of, for example, quartz or stainless steel is connected to the gas supply pipe 25 through a Teflon tube (not shown). The injector 61 is a gas. It is inserted in the reaction tube 62 of the heat processing furnace 11 which is a process part. The heat treatment furnace 11 is equipped with the reactor 62 and the heater 63 provided so that the reaction tube 62 may be enclosed, for example. Thus, the wafer boat 12 on which the semiconductor wafer W is mounted is mounted to the reaction tube 62 in a state where the wafer boat 12 is placed on the heat insulating container 64. A gas discharge boat 65 is provided in the reaction tube 62, and the exhaust mechanism 21 is connected through an exhaust pipe 26.

For example, a tape heater 71 is connected to the gas pipe 25 in order to preheat the process gas or to prevent condensation. 2 shows only a part of the tape heater 71 for convenience.

In the gas control mechanism, an electric product for controlling the extraction of the detection signal, the flow rate of the gas control mechanism, the pressure or the supply stop of the gas is combined. For example, in the pressure switch 30, a portion of the resistance 34 of the Wheatstone bridge circuit 33 is adhered to the pressure detection plate 32 in the case 31, and the distortion of the pressure detection plate 32 is bent. A function of capturing by the stone bridge circuit 33 and outputting the pressure detection value to the controller 70 and outputting an alarm signal to the controller 70 by the relay 35 when the pressure detection value exceeds the set value. Have.

With respect to this pressure switch 30, electrical components other than the resistor 34 are mounted on the board | substrate of the circuit unit 36. As shown in FIG.

In addition, the mass flow controller 40 processes a detection signal of the flow rate detecting unit 41, the flow rate adjusting unit 42, and the flow rate detecting unit 41, and outputs an operation signal to the flow rate adjusting unit 42. The signal processor 43 includes electrical components such as a control amplifier, and is supplied with a DC voltage of ± V ₀ , for example, ± 15V.

In addition, the shutoff valve 50 is configured to shut off by the air from the air control unit 51, the air control unit 51 includes a solenoid valve 52 or a circuit for differentializing the solenoid valve 53 Etc. are provided. 54 is a quench tube.

Electrical components such as the circuit unit 36, the signal processor 43 of the mass flow controller 40, and the air controller 51 of the shutoff valve 50 are separated from the gas controller unit 22. It is housed in the tube body 23a and comprises the electric component unit 23. As shown in FIG. The connector 72 of the tape heater 71 is also incorporated in the electric component unit 23.

In the above example, one gas distribution system has been described as an example. However, in the actual heat treatment apparatus, a plurality of gas distribution systems are provided to cope with various heat treatments, and the number of gas control mechanisms in each gas distribution system is large, so that gas control is performed. The number of gas control devices in the device unit 22 is very large, and is configured to show the gas control device unit 22, for example, in FIG. The gas controller unit 22 is connected to the airtight tube 73 on the inlet side and the airtight tube 74 on the exhaust side to a tube 22a of a sealed structure, and air flows through the tube body 22a. It is assumed that the leakage preventing structure does not leak out of the tube body 22a even if gas leaks in the tube body 22a.

In addition, the electric component unit 23 is installed outside the pipe body 22a of the blocked gas controller unit 22 separately from the gas controller unit 22, as shown in FIG. The electrical component is housed. Thus, a cable 84 including a signal path and the like for transmitting an electric signal between the electric component and the gas control mechanism is connected between the two units 22 and 23. A cable 85 is connected between the electrical component unit 23 and the controller 70 for receiving arm signals, detection signals or control signals.

In the heat treatment apparatus configured as described above, first, a plurality of wafers W mounted on the wafer boat 12 are loaded into the reaction tube 62 of the heat treatment furnace 11, and then the inside of the reaction tube 62 has a predetermined vacuum degree. At the same time as the pressure is reduced, the heater 63 is brought into a crack state at a predetermined temperature. This flows through the process gas pipe 25 from the gas cylinder 27 of the gas source unit 24. Thus, while the pressure and flow rate of the processing gas are controlled by the pressure reducing valve RG2 and the mass flow controller 40, the processing gas is introduced into the reaction tube 62 through the injector 61, and the wafer is processed by the processing gas. Heat treatment such as etching, CVD, and diffusion treatment is performed on (W).

Thus, after the treatment is completed, the treatment gas is replaced with the purge gas to purge the reaction tube 62.

During this process, gas leaks from, for example, a joint of a connection part, etc. in the gas controller unit 22, and from an electrical component such as a switch 35 or a relay 53 coupled to the gas controller. As described above, even when a space is generated or a specification due to a poor connection of a circuit or a poor connection of the connector 26 of the tape heater 25 occurs, the electrical components leaked by the outside of the gas control device unit 22 as described above. Since it is separated from the atmosphere of gas, there is no fear of gas explosion or ignition. In this way, the gas control device is stored in the tube body 22a having the gas leakage structure, and the electric component unit 23 is constituted separately from each other or for each electric component. The gas supply system is remarkably compacted without using an airtight structure or an explosion proof structure.

By the way, in the gas control unit 22, the mass flow controller (gas flow control device) 40 exists centrally, and also the occupied space becomes large. Therefore, by studying the structure and piping of the mass flow controller 40, the gas control valve unit 22 can be miniaturized, and the gas supply system can be further compacted.

The massflow controller considering such a thing will be described. 4 is a cross-sectional view showing such a mass flow controller. The mass flow controller 40 includes a base table 44 having a flow path 133 that connects the inlet 131 and the outlet 132 of the gas, and the flow rate of the gas in the flow path 133 of the base table 44. The flow rate adjusting section 42 for adjusting the flow rate, the flow rate detecting section 41 for detecting the flow rate of the gas in the flow path 133, and the gas flow rate adjusting groove so that the flow rate of the gas becomes a predetermined value by the flow rate detecting section 41. The signal processing part 43 which outputs an operation signal to the 42 is provided.

In this mass flow controller, the outlet 132 is positioned such that the gas flow direction is perpendicular to the flow path 133, and the flow path 133 and the outlet 132 have an L shape. Similarly, the inlet 131 may be positioned in such a manner that the gas flow direction is a direction orthogonal to the flow path 133. The inlet 131 and the outlet 132 also have an L-shaped flow path 133. The inlet 131 and the outlet 132 may be formed to form an L-shape with the flow path 133 (refer to the dashed-dotted line in FIG. 4).

The gas flow rate adjusting unit 42 is inserted through the compression spring 140 between the valve seat 139 provided at a part of the circulation part 133a provided at the outlet side of the flow path 133 and the valve seat 139. The valve body 141 provided is comprised, and the actuator 142 which mounts these valve body 141 in the valve seat 141 against the repulsion force of the compression spring 140 is comprised. As the actuator 142, for example, a piezoelectric element, a solenoid, or a flexible heating wire can be used.

In addition, the gas flow rate detection unit 41 has a substantially U-shaped pipe 144 for allowing a portion of the gas to flow through the gas passage 133 from the inlet 131 in series. The heating wires 245a and 245b are wound around the parallel part of this pipe 144 at regular intervals. Moreover, the temperature sensors 146a and 146b are provided in the vicinity of the position where these heating wires 145a and 145b are wound, respectively. The heating wires 145a and 145b are connected to the power sources 147a and 147b, respectively, and the voltage is applied from them.

The power sources 147a and 147b and the temperature sensors 146a and 146b are connected to the signal processing unit 143. In the signal processor 43, the temperature difference generated by the gas flow is detected by the sensors 146a and 146b, and the power supply 147a is applied to the heating wires 145a and 145b until there is no secondary difference. A signal is output to 147b, and the gas flow rate is determined by the difference of these voltages. Thus, the difference value of the voltage and the value of the voltage corresponding to the set signal are compared, and a control signal is output to the gas flow rate adjusting unit 42 so that the gas flow rate becomes a predetermined flow path as the elapses. The gas flow regulating mechanism 42 drives the valve body 141 in response to this control signal, and the cross-sectional area of the portion corresponding to the valve seat 139 of the flow path 133 is adjusted so that the gas flow rate is controlled to a predetermined value. . Moreover, the rectifying layer 143 is formed in the part to which the pipe 144 of the flow path 133 is connected. In the flow control apparatus configured as described above, since the inlet 131 and / or the outlet 132 are configured to be orthogonal to the flow path 133 as described above, the width of the direction selection of the gas supply pipe 123 increases, The piping flow of the gas control device unit 22 can be easily connected by increasing the degree of freedom of piping such as the mass flow controller 40, the gas supply pipe 25, the filters F1, F2, and the valve 28b. have. In addition, by connecting the gas supply pipe 25 to the flow path 133 in an L-shape, the mass flow controller 40 itself can be downsized, and the gas supply pipe 25 can be piped in three dimensions. The unit 22 can be miniaturized. Further, by miniaturizing the gas control unit 22, the gas control unit 22 can be piped to the heat treatment unit 10 without disturbing the maintenance of the entire heat treatment apparatus.

In this case, the gas control device unit 22 can be configured as shown in FIG. The gas control device unit 22 includes a plurality of gas supply pipes 25 corresponding to the types of gas used in the pipe body 22a, filters F1 and valves 28b provided in the gas supply pipes 25, and The mass flow controller 40 and the like are provided. As described above, the inlet 131 and / or the outlet 132 are configured to be orthogonal to the flow path 133 as described above, as shown in FIG. 5 (in FIG. 5, the inlet 131 and the outlet 132). Orthogonal to the flow path 133) The mass flow controller 40 can be installed near the wall of the tubular body 22a, and it is necessary to perform a lot of regular maintenance and inspection work compared to other equipment. The advantage is that the massflow controller can be easily maintained.

Next, another embodiment of the massflow controller will be described.

In this embodiment, the massflow controller 40 has gas inlets 131a, 131b, outlets 132a, and 132b, as shown in FIG. . In addition, a joint for connecting the gas supply pipe 25 to the inlet and the outlet used (inlet 131a and outlet 132b in FIG. 6) through, for example, a seal member 138 such as an O-ring or a metal seal. 150 is detachably mounted.

In FIG. 6, the inlet 131b and the outlet 132b, which are not used, are blocked by a metal blocking member 138a.

In addition, the other part of FIG. 6 is comprised similarly to the massflow controller of FIG.

By configuring the mass flow controller 40 in this way, the inlet and outlet of the gas can be arbitrarily selected according to the request, so that the degree of freedom of piping can be further increased, and the gas control unit can be further miniaturized. In FIG. 6, two inlets and two outlets are orthogonal to each other. However, the number of the inlets and outlets is not limited to two, but a large number may be provided. In this case, the seams may be connected to the inlets and outlets used. In addition, the inlet and the outlet may not necessarily be plural, and the effect which maintains more easily is maintained by attaching a joint at least detachably.

As described above, the case where the seam 150 is detachably attached to each massflow controller 40 has been described. However, when the block-shaped seam is detachably attached to the plurality of massflow controllers 40 at the same time, the gas is removed. It is possible to further miniaturize the controller unit.

That is, as shown in FIG. 7, gas which is connected to the flow path of each base stage 44 at least one of the gas inlet and the outlet provided in the base stage 44 of the several massflow controller 40 comprised as mentioned above is shown. The block-shaped joint 160 having the connection port 161 of the supply pipe 25 and the gas flow passage 160a can be freely attached or detached through the seal member.

In this case, the connection port 161 of the block-shaped joint 160 can be positioned in the immediately preceding shape or orthogonal to the flow path provided in the base 44, and can be made into any piping shape as needed.

The block-shaped joint 160 can change the gas passage 160a and the connection port 161 in various ways depending on piping. This state is shown in FIG. 8 (a)-FIG. 8 (d). 8A is an example in which each gas passage 160a is designed linearly.

8B is an example in which the connection port 161 corresponding to each gas flow path 160a is provided in the side wall of a block joint. 8 (c) shows an example in which each gas flow path 160a is joined and connected to one connection port 161. 8 (d) is an example in which the state of FIG. 8 (a) and the state of FIG. 8 (c) can be selectively employed using the valve 164.

In addition, in order to attach the block-shaped joint 160 to the base member 44, an attachment bolt 163 penetrating the attachment hole 162 provided in the block-shaped joint 160 is attached to the base table 44 (not shown). No).

Thus, by attaching or detachably attaching the block state joint 160 to at least one of the inlet and the outlet of the plurality of massflow controllers 40, it is possible to reduce the number of parts and facilitate the piping work. In addition, since the flow rate control unit can be unitized, the gas control unit 22 can be further miniaturized and maintenance can be facilitated.

In addition, the piping shape of the mass flow controller 40 can be selected freely, and as shown in FIG. 9, the inlet 131 and the outlet 132 may be located upwards, or may be located sideways, and may be located in arbitrary directions. Can be placed.

In the above example, the electric parts are housed in the airtight tube 23a to constitute the electric part unit 23. However, the electric parts need not be unitized, and may be provided outside the gas body of the gas control unit.

Further, gas sensors may be provided in the units 22 and 23, respectively, to cut off the power at the output of the gas sensor. Instead of storing all the gas control devices in one pipe, the gas control devices may be divided into a plurality of cables and stored in storage units such as pipes for each group. In addition, the present invention is not limited to the above heat treatment apparatus, and may be applied to any processing apparatus using a gas such as an etching apparatus, an ion implantation apparatus, a plasma CVD apparatus, or the like. In addition, the object to be processed is not limited to the semiconductor wafer, but may be another substrate such as an LCD substrate.

Claims (18)

A gas processing unit which performs a specific treatment with a gas on the target object; A gas supply section for supplying gas to the gas processing section, the gas supply section includes a plurality of gas controllers including a plurality of gas flow rate control devices, a plurality of gas controllers, a sealed structure, and a gas introduced therein; And a gas control device accommodating container having a gas flow by exhaust, and a plurality of electrical components provided outside the accommodating container and attached to the gas control device. A processing apparatus using an integrated gas. The flow rate control apparatus according to claim 1, wherein each of the flow rate control devices includes: a base having an inlet, an outlet of a fluid, and a flow path therebetween; flow control means for adjusting a flow rate of the fluid in the flow path of the base; And a flow rate detecting means for detecting a flow rate, and a control signal output means for outputting a flow rate control signal to the flow rate control means in accordance with the detection result of the flow rate detecting means to control the flow rate of the fluid to a predetermined value. The flow control device is freely attached to and detached from at least one of the inlet and the outlet of each base, and has a block-shaped joint having a connection portion of the fluid pipe connected to the flow path of the base of each flow control unit. A flow control device is a processing device that uses a gas that is integrated by the block-shaped joint. The processing apparatus according to claim 2, wherein each of the flow bases of the flow control unit has another inlet, and uses a gas in which the block-shaped joint is detachably attached so as to be continuous to one of these inlets. 3. The processing apparatus according to claim 2, wherein each of the flow bases of the flow rate control unit has a further outlet and uses a gas in which the block-shaped joint is detachably attached so as to be continuous to one of these outlets. The process according to claim 2, wherein at least one of the inlet or the outlet of the fluid in the base is used in each of the flow rate control units so that the flow direction of the fluid therein is in a direction orthogonal to the flow path. Device. The processing apparatus according to claim 1, further comprising a gas having an electrical component storage container accommodating the plurality of electrical components. A gas processing unit which performs a specific processing by the gas of the target object; A gas supply unit for supplying gas to the gas processing unit, wherein the gas supply unit accommodates a plurality of gas control devices and these gas control devices, has a sealed structure, is provided with a gas introduction pipe and a gas discharge pipe, and is in a closed state. A processing apparatus using a gas control apparatus accommodating container which uses a gas which gas flows through, and a gas provided outside the gas control apparatus accommodating container and having a plurality of electrical parts attached to the gas control apparatus. . 8. The gas flow control apparatus according to claim 7, wherein the gas control device has a plurality of flow control devices, each flow control device comprising: a base having an inlet, an outlet of a fluid, and a flow path therebetween; Flow rate adjusting means for adjusting the flow rate of the fluid in the flow path of the base; Flow rate detecting means for detecting a flow rate of the fluid in the flow path; And a control signal output means for outputting a flow rate control signal to the flow rate adjusting means to control a predetermined value of the flow rate of the fluid in accordance with the detection result of the flow rate detecting means, and at least one of the inlet or the outlet of the fluid The processing apparatus which uses gas located so that the flow direction of a fluid in it may become a direction orthogonal to the said flow path. 8. The gas controller of claim 7, wherein the gas controller has a plurality of flow control devices, each flow control device comprising: a base having an inlet, an outlet of a fluid, and a flow path therebetween; Flow rate adjusting means for regulating the flow rate of the fluid in the fluid of the base; Flow rate detecting means for detecting a flow rate of the fluid in the flow path; Control signal output means for outputting a flow control signal to the flow rate adjusting means in accordance with a detection result of the fluid detecting means to control the flow rate of the fluid to a predetermined value; And a gas having a seam freely attached to or detached from at least one of the inlet and the outlet. 10. The processing apparatus according to claim 9, wherein the base has another inlet, and one side of the inlet uses a gas in which the seam is detachably attached. 10. The processing apparatus according to claim 9, wherein the base has another outlet, and the gas is used in which the seam is detachably attached to one of these outlets. 10. The processing apparatus according to claim 9, wherein at least one of the inlet or outlet of the fluid of the base is positioned so that the flow direction of the fluid therein becomes a direction orthogonal to the flow path. A gas processing unit which performs a specific processing by the gas to be processed; A gas supply section for supplying gas to the gas processing section, the gas supply section accommodates a plurality of gas controllers and these gas controllers, has a sealed structure, is provided with a gas introduction pipe and a gas discharge pipe, and is in a closed state. A gas controller storage container using a gas flowing therethrough, a plurality of electrical parts installed outside the gas controller storage container and attached to the gas controller, and the plurality of electrical parts. A processing apparatus using gas provided with a storage container. 14. The gas control device of claim 13, wherein the gas control device has a plurality of flow control devices, the flow control device comprising: a base having an inlet, an outlet of a fluid, and a flow path therebetween; Flow rate adjusting means for adjusting the flow rate of the fluid in the flow path of the base; Flow rate detecting means for detecting a flow rate of the fluid in the flow path; A control signal output means for outputting a flow rate control signal to the flow rate adjusting means in accordance with the detection result of the flow rate detecting means and controlling the flow rate of the fluid to a predetermined value, wherein at least one of the inlet or the outlet of the fluid in the base stage is provided; The processing apparatus which uses the gas located so that the flow direction of the fluid in it may become a direction orthogonal to the said flow path. 14. The gas control apparatus of claim 13, wherein the gas control apparatus has a plurality of flow control apparatuses, each flow control apparatus comprising: a base having an inlet, an outlet of a fluid, and a flow path therebetween; Flow rate adjusting means for adjusting the flow rate of the fluid in the flow path of the base; Flow rate detecting means for detecting a flow rate of the fluid; Control signal output means for outputting a flow rate control signal to the flow rate adjusting means in accordance with the detection result of the flow rate detecting means to control the flow rate of the fluid to a predetermined value; A processing apparatus using a gas having a seam that is detachably attached to at least one of the inlet and the outlet. The processing apparatus according to claim 15, wherein the base has another inlet, and they use a gas in which the seam is detachably attached to one side of the inlet. The processing apparatus according to claim 15, wherein the base has another outlet, and they use a gas in which the seam is detachably attached to one side of the outlet. The processing apparatus according to claim 15, wherein at least one of the inlet or the outlet of the fluid of the base is positioned so that the flow direction of the fluid therein is in a direction orthogonal to the flow path.