KR100262739B1 - Driving circuit of tma - Google Patents

Abstract

PURPOSE: An active circuit of a thin film actuated mirror array is to selectively drive a plurality of target pixels among the MxN unit pixels installed in the thin film actuated mirror array, using a decoder and a plurality of switches. CONSTITUTION: A driving controller(410) generates row switching control data and column switching control data consisting of a predetermined bit, using a clock pulse and a synchronous signal supplied from the outside. A column storage unit(420) stores the column switching control data generated in the driving controller for a while, and outputs the stored column switching control data at a time. A column switching unit(430) selectively applies an image signal supplied from the outside to the M number of column lines, on the basis of the column switching control data output from the column storage unit. A row storage unit(440) stores the row switching control data generated in the driving controller for a while, and selectively outputs the stored row switching control data to the N number of row lines.

Description

Driving circuit of thin film type optical path control device

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a drive circuit for thin film type optical path control devices (AMAs), and more particularly to a drive circuit for thin film type optical path control devices including a switching unit including a decoder and a plurality of switches.

AMA is a type of projection image display device, and refers to a device that displays a predetermined image by reflecting light incident from a light source at a predetermined angle for each pixel of M × N (M, N is a natural number). Compared to the CRT representing a direct-view image display device, it operates at a lower voltage, consumes less power, and provides an image without distortion. In addition, liquid crystal display (LCD) and DMD ( Its light efficiency is higher than that of Deformable Mirror Device, and its development is actively underway.

As described above, in the AMA, M × N (M, N is a positive integer) unit pixels are formed in a matrix form, and each unit pixel is tilted to a predetermined angle to be incident from an external light source. By reflecting light at a predetermined angle to project a predetermined image onto a screen (not shown), a structure and an operation process of a general thin film type optical path control apparatus will be described with reference to FIGS. 1 and 3 as follows.

First, FIG. 1 is a plan view showing a plane of a general M × N thin film type optical path adjusting device, FIG. 2 is a cross-sectional view showing a cross section of unit pixels constituting a general M × N thin film type optical path adjusting device, and FIG. It is a block diagram which shows the drive circuit of the thin film-type optical path control apparatus which concerns on technology.

Hereinafter, to facilitate understanding of the present invention, a thin film type optical path adjusting device including M × N unit pixels is referred to as an AMA module 350, and each unit pixel constituting the M × N thin film type optical path adjusting device is called an AMA pixel. It is called.

First, when a synchronization signal and image data are externally applied to the system controller 310, the system controller 320 individually drives M × N AMA pixels in the AMA module 350 to correspond to the image signals applied from the outside. In order to control the driving, the common electrode 320, the gate driver 330, and the source driver 340 are driven. In this case, the system controller 310 may control the driving signal to be applied to each AMA pixel from the gate driver 330 and the source driver 340 based on the synchronization signal applied from the outside.

By driving control of the system controller 330, the gate driver 300 may gate the drive signals provided from the source driver 340 to be sequentially applied to the M × N AMA pixels constituting the AMA module 350. The signal on / off signal is generated, and the source driver 330 generates a drive signal corresponding to the image data applied from the outside. In this case, the driving signal generated by the source driver 330 charges the driving voltage for a predetermined time and then drives the actuator 200 using the charged voltage for the remaining time.

In addition, the common electrode unit 320 provides a common voltage, such as a ground voltage, to the upper electrode 240 of the AMA pixel under the control of the system controller 310.

Thereafter, when the gate signal generated by the gate driver 330 is provided to the gate electrode 125 of the AMA pixel along the gate line of the gate pad 335 shown in FIG. 3, the gate electrode 125 is turned on. Therefore, the driving signal provided to the source electrode 120 from the source driver 340 via the source pad 345 is applied to the drain electrode 115.

Meanwhile, since the drain electrode 115 makes an electrical connection with the lower electrode 220 through the metal layer 140 made of a conductive metal and the distributor 270, the driving signal applied to the drain electrode 115 is the metal layer 140. And the lower electrode 220 via the distributor 270.

In this case, since the common voltage provided from the common electrode unit 320 is applied to the upper electrode 240, a potential difference between the driving signal applied to the lower electrode 220 and the common voltage applied to the upper electrode 240 occurs. Therefore, an electric field is generated between the lower electrode 220 and the upper electrode 240 corresponding to the potential difference between the driving signal and the common voltage.

Meanwhile, the deformable portion 230 formed between the lower electrode 220 and the upper electrode 240 may be PZT (Pb (Zr, Ti) O ₃ ) or PLZT ((Pb, La) (Zr, Ti) O ₃ Piezoelectric ceramics, such as), or electrodistorted ceramics, such as PMN (Pb (Mg, Nb) O ₃ ), have a property of deforming in proportion to an electric field.

Thus, the deformable portion 230 is deformed in proportion to the electric field generated by the electric potential difference between the lower electrode 220 and the upper electrode 240 to incline the entire actuator 240 at a predetermined angle proportional to the applied electric field. .

By the operation process described above, in the state in which the actuator 200 is inclined at a predetermined angle, the light incident from the light source is reflected at a predetermined angle corresponding to the inclination angle on the surface of the upper electrode 240. In this case, the upper electrode 230 is composed of a conductor having good light reflection efficiency such as aluminum (Al), and will simultaneously serve as a common electrode and a mirror.

In this manner, each of the M × N AMA pixels constituting the AMA module 350 reflects the light incident from the light source at a predetermined angle, thereby forming a predetermined image corresponding to the input image data.

However, in the above-described conventional thin film type optical path control apparatus, the source driver 340 and the gate driver 330 described above are used in the pitch interval between the source driver 340 and the gate driver 330 by using an IC (Intergrated Chip). Since the dimension of the AMA module 350 is determined by the AMA module 350, it is difficult to use the AMA module 350 to implement high resolution.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned conventional problems, and an object of the present invention is to provide a plurality of M × N unit pixels included in a thin film type optical path control apparatus using a switching unit including a decoder and a plurality of switches. The present invention provides a driving circuit for a thin film type optical path control device capable of selectively driving two target pixels.

In order to achieve the above object, in the present invention, M x N (M, N is a positive integer) actuators, and M number for applying a predetermined video signal applied from the outside to the N actuators located in the column direction A driving circuit of a thin film type optical path control device having a column line and N row lines for switching M actuators located in the row direction, the column switching comprising a predetermined bit using a clock pulse and a synchronization signal applied from the outside. A drive controller for generating control data and row switching control data; A column storage unit for temporarily storing column switching control data generated by the driving control unit and simultaneously outputting the stored column switching control data; A column switching unit selectively applying an image signal applied from the outside to the M column lines based on the column switching control data output from the column storage unit; And a row storage unit for temporarily storing the column switching control data generated by the driving control unit and selectively applying the stored column switching control data to the N row lines.

1 is a plan view showing a plane of a typical M × N thin-film optical path control device,

2 is a cross-sectional view showing a cross section of a unit pixel constituting a general M × N thin film type optical path adjusting device;

3 is a block diagram showing a driving circuit of a thin film type optical path adjusting device according to the related art;

Figure 4 is a block diagram showing a driving circuit of the thin film type optical path control apparatus according to the present invention,

FIG. 5 is a circuit diagram illustrating one of a plurality of column registers included in a column storage unit included in a driving circuit of a thin film type optical path adjusting device according to the present invention and a column switch in a column switching unit formed corresponding thereto.

FIG. 6 is a circuit diagram illustrating one of a plurality of row registers provided in a row storage unit provided in a driving circuit of a thin film type optical path control device according to the present invention; FIG.

<Explanation of symbols for main parts of drawing>

100 driving substrate 110 semiconductor substrate

115: drain electrode 120: source electrode

125 gate electrode 130 field oxide film

135: insulating layer 140: metal layer

145: protective layer 150: etch stop layer

160: air gap 200: actuator

210: membrane 220: lower electrode

230: strained layer 240: upper electrode

250: stripe 260: power distribution hole

270: distributor 310: system control unit

320: common electrode 330: gate driver

335: gate pad 340: source driver

345: source pad 350: AMA module

410: drive control unit 420: column storage unit

430: column switching unit 440: row storage unit

CR: Column Register RR: Low Register

S (m): source line G (n): gate line

Advantages and other objects and advantages of the present invention will be more clearly understood by the following description with reference to the accompanying Figures 4-6.

4 is a block diagram showing a driving circuit of the thin film type optical path control apparatus according to the present invention, Figure 5 is a plurality of column registers provided in the column storage unit provided in the driving circuit of the thin film type optical path control apparatus according to the present invention FIG. 6 is a circuit diagram illustrating one and a column switch in a column switching unit formed corresponding thereto, and FIG. 6 illustrates one of a plurality of row registers provided in a row storage unit included in a driving circuit of a thin film type optical path adjusting device according to the present invention. It is a circuit diagram.

Referring to FIG. 4, the driving circuit of the thin film type optical path control apparatus according to the present invention includes a driving controller 410, a column storage unit 420, a column switching unit 430, and a row storage unit 440. The function of each structural member is as follows.

First, the driving controller 410 generates column switching control data and row switching control data based on a clock pulse and a synchronization signal applied from the outside, and stores the generated column switching control data in a column. By providing the switching unit 420 and supplying the low switching control data to the row storage unit 440, the control unit 420 supplies the image signals applied from the outside to a plurality of pixels among the M × N AMA pixels simultaneously.

The column storage unit 420 is composed of a plurality of registers having a predetermined storage capacity capable of storing A (A is a positive integer) bit, and each register is a column switching control provided by the driving controller 410. Data is stored in a storage capacity unit, and the stored column switching control data are provided to the column switching unit 430 in parallel.

The column switching unit 430 is composed of M switches corresponding to each of the M column lines, and is switched corresponding to each bit value of the column switching control data provided in parallel in the column storage unit 420, thereby The applied image signal is applied to the N pixels formed in the column direction with respect to any one of the M lines.

The row storage unit 440 is composed of a plurality of registers having a predetermined storage capacity capable of storing B (B is a positive integer) bits, each of which registers the column switching control provided by the driving controller 410. The data is stored in a storage capacity unit, and the stored column switching control data is provided to N row lines, that is, N gate lines provided in the AMA module 350 in parallel.

Hereinafter, a description will be given of a preferred embodiment of the present invention in detail with respect to the operation of the entire driving circuit, based on the individual operation of the component member to perform the above-described function.

On the other hand, in a preferred embodiment of the present invention, for example, a 680 x 480 thin film type optical path adjusting device, the driving element of the thin film type optical path adjusting device uses a MOS transistor, and the source line electrically connecting the source electrode of the MOS transistor in the column direction. A thin film type optical path control device having a column line and a gate line in which the gate electrode of the MOS transistor is electrically connected in a row direction as a low line is exemplified. In addition, in the preferred embodiment of the present invention, an 8-bit shift register is used for the column register and the row register. At this time, the following description is a preferred embodiment of the present invention, the number of column registers provided in the column storage unit 420, even in a thin film type optical path control device using a different drive element or support 800 × 600 and higher resolution, By varying the number of column switches provided in the column switching unit 430 and the number of row rasters provided in the row storage unit 440, it may be easily changed.

First, when a clock pulse and a synchronizing signal are externally applied to the driving control unit 410, the driving control unit 410 generates column switching control data with reference to the clock pulse and synchronizing signal applied from the outside, and generates the column switching. The control data is provided to each of the plurality of column registers CR in 8-bit units, while generating low switching control data, and the generated low switching control data is provided to each of the plurality of row registers RR in 8-bit units. In this case, since the 8-bit column register and the row register are used in the preferred embodiment of the present invention, in order to satisfy the column selection value and the row selection value for the 680 × 480 thin film type optical path control device, the column storage unit 420 may be used. It is preferable to use 80 column registers, and the row storage unit 440 may use 60 row registers.

Meanwhile, in the 800 × 600 thin film type optical path adjusting device, the column storage unit 420 may be configured with 100 column registers, and the row storage unit 440 may use 75 row registers.

Thereafter, the 80 column registers CR1, CR2,... CR80 provided in the column storage unit 420 sequentially store the column switching control data provided in units of 8 bits from the driving control unit 410 by 8 bits. When the storage is completed, 640-bit column switching control data of 8 bits in 80 column registers are provided in parallel to 640 column switches formed corresponding to each bit output terminal of the column register.

That is, as shown in Fig. 5, taking the first column register CR1 as an example, 8-bit data a1, a2, a3... … column switches C1, C2, C3,..., 8-bit column switching control signals formed of a8 correspondingly to the respective bit output stages; … Column switching control data a1, a2, a3,... … gives a8. And the remaining column registers CR2, CR3,... … In the CR80, the column switches C1, C2, C3,... … Column switching control data a1, a2, a3,... … gives a640.

After that, the column switches C1, C2, C3,... Received with 1-bit column switching control data from 80 column registers. … Each of the C640s selectively turns on and applies an externally applied image signal to the column line corresponding to the turned-on column switch based on the column switching control data.

For example, if the second bit a2 of the column register CR2, the fourth bit a4 of the column register CR14, the seventh bit a7 of the column register CR53 are applied with 1, and the rest are all applied with 0, a bit value of 1 Column switches C10, C108, and C431 formed correspondingly to the bit output terminal to which the image switching control signal is applied are turned on, and column switches formed to correspond to the bit output terminal to which the image switching control signal having a bit value of 0 is applied. All stay off. At this time, in the preferred embodiment of the present invention, the column switch is composed of 640 MOS transistors, and since the image signals from the outside are applied to the source lines provided in the MOS transistors, the column switches C10, C108, and C431 are turned on. Accordingly, the image signal applied from the outside is provided to the source electrode provided in the 480 pixels formed in the column direction in the column lines S 10, S 108, and S 431 corresponding to the column switches C 10, C 108, and C 431. .

Meanwhile, the 60 column registers RR1, RR2,... … The RR60 sequentially stores the low switching control data provided in units of 8 bits from the driving controller 410 by 8 bits. When the storage is completed, the RR60 stores the row switching control data of 480 bits by 8 bits in the 60 row registers. Each of the 480 column lines corresponding to each bit output terminal of the 480 gate lines is provided in parallel to each other.

At this time, all of the M AMA pixels positioned in the gate line corresponding to the bit output terminal of the low switching control signal having a bit value of 1 of the low switching control signal 480 bits are turned on.

For example, as shown in FIG. 6, taking the first row register RR1 as an example, 8-bit data b1, b2, b3... … a low line (gate line) G (1), G (2), G (3),... … Low switching control data b1, b2, b3, ... in units of one bit in G (8). … gives b8. And the remaining row registers RR2, RR3,... … In the RR60, the row lines (gate lines) G (2), G (3), G (4),... … , Low switching control data b1, b2, b3,... … provides b480.

Thereafter, the low lines (gate lines) G (2), G (3), G (4),... … Each G 480 selectively turns on the gate line to which the low switching data having the bit value of 1 of the 480 gate lines is applied based on the data value of the low switching control data. That is, all of the 640 AMA pixels formed in the row direction of the gate line to which the low switching data having a bit value of 1 are applied are turned on.

For example, if the fifth bit b5 of row register RR5, the fourth bit b4 of row register RR23, the third bit b3 of row register RR36 are applied as 1, and the rest are all applied as 0, a bit value of 1 is applied. The 640 AMA pixels on the gate lines G 41, G 180, and G 283 electrically connected to the bit output terminal to which the image switching control signal is applied are turned on.

Therefore, in combination with the example in the above-described column switching control signal, the column line (source line) S (10), S 108, S 431 and the row switching control signal selected by the column switching control signal are selected. The image signal applied from the outside will be applied only to the AMA pixel formed at the intersection of the selected low line (gate line) G 41, G 180, and G 283.

Therefore, according to the present invention, it is possible to drive a thin film type optical path adjusting device for a high resolution with a simple circuit configuration, it is possible to drive a plurality of target AMA pixels simultaneously with a single signal application.

Claims (6)

M x N (M, N is a positive integer) actuators, M column lines for applying a predetermined image signal applied from the outside to the N actuators located in the column direction, and M actuators located in the row direction In the driving circuit of the thin film type optical path control device having N row lines for switching the A driving controller which generates column switching control data and row switching control data consisting of predetermined bits using a clock pulse and a synchronization signal applied from the outside; A column storage unit for temporarily storing column switching control data generated by the driving control unit and simultaneously outputting the stored column switching control data; A column switching unit selectively applying an image signal applied from the outside to the M column lines based on the column switching control data output from the column storage unit; And a row storage unit for temporarily storing column switching control data generated by the driving control unit and selectively applying the stored column switching control data to the N row lines. The driving circuit of claim 1, wherein the driving circuit of the thin film type optical path adjusting device is applied to a 640 × 480 thin film type optical path adjusting device. 3. The driving circuit of claim 2, wherein the column storage unit comprises 80 8-bit registers, and the row storage unit consists of 60 8-bit registers. 2. The driving circuit of claim 1, wherein the driving circuit of the thin film type optical path adjusting device is applied to an 800 × 600 thin film type optical path adjusting device. 5. The driving circuit of claim 4, wherein the column storage unit is made of 100 8-bit registers, and the row storage unit is made of 75 8-bit registers. 6. The drive circuit according to any one of claims 1 to 5, wherein the column switching unit comprises M column switches using MOS transistors.

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