KR100261531B1 - The excessive voltage control circuit of both end of igbt - Google Patents
The excessive voltage control circuit of both end of igbt Download PDFInfo
- Publication number
- KR100261531B1 KR100261531B1 KR1019980008022A KR19980008022A KR100261531B1 KR 100261531 B1 KR100261531 B1 KR 100261531B1 KR 1019980008022 A KR1019980008022 A KR 1019980008022A KR 19980008022 A KR19980008022 A KR 19980008022A KR 100261531 B1 KR100261531 B1 KR 100261531B1
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- South Korea
- Prior art keywords
- circuit
- igbt
- amplifier
- resistors
- overvoltage
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/08116—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in composite switches
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
Abstract
Description
본 발명은 인슈레이티드 게이트 바이폴라 트랜지스터(IGBT) 스위칭소자를 사용하여 대용량의 IGBT 드라이브 시스템을 가동하도록 하는 기술분야로서 대용량 IGBT 드라이브 시스템의 경우 IGBT 소자의 지속적인 발전에도 불구하고 소자의 용량은 결정되어 있어 이 용량의 한계점을 극복하기 위하여서는 종래에는 다수개의 소자를 병렬로 연결하여 회로를 구성하는 방법을 사용하고 있다. 그런데 소자를 병렬연결하여 사용할 시에는 소자의 스위칭제어(온-오프작용)시 과전압과 과전류가 순간적으로 발생되게 되는데 이 순간 과전류, 과전압은 소자의 수명에 큰 영향을 주게 되며 심하면 소자의 파손을 초래하게 되는 바 따라서 종래에는 첨부한 도면 도 2 에 도시한 바와 같이 2개의 트랜지스터를 병렬로 연결하여 푸쉬풀앰프(1) 역할을 하도록 하여 2개의 트랜지스터의 베이스와 게이트(2) 일측을 연결하고 게이트(2)의 한극선과 커패시터(3)를 연결하며 푸쉬풀앰프(1)의 타측은 다이오드(4) 출력측과 연결하고 다이오드(4)의 입력측은 저항(5)과 연결하고 저항(5)의 타측은 IGBT와 연결하여서 되는 기존의 턴-오프회로를 구성하여 왔다.The present invention is a technical field for operating a large capacity IGBT drive system using an Insulated Gate Bipolar Transistor (IGBT) switching device. In the case of a large capacity IGBT drive system, the device capacity is determined despite the continuous development of the IGBT device. In order to overcome this capacity limitation, conventionally, a method of constructing a circuit by connecting a plurality of devices in parallel is used. However, when the devices are connected in parallel, overvoltage and overcurrent are generated instantaneously during the switching control (on-off action) of the device.At this moment, the overcurrent and overvoltage have a great effect on the life of the device. Therefore, in the related art, as shown in FIG. 2, two transistors are connected in parallel to serve as a push-pull amplifier 1, and one side of the two transistors and one side of the gate 2 are connected to each other. 2) connects one pole wire and capacitor (3), the other side of push-pull amplifier (1) is connected to diode (4) output side, the input side of diode (4) is connected to resistor (5), and the other side of resistor (5) Conventional turn-off circuits in connection with IGBTs have been constructed.
IGBT 턴-오프시 콜렉터 전류의 감소기울기는 매우 크다. 이러한 감소기울기로 인해 회로내의 작은 부유인덕턴스에 의해서도 큰전압이 콜렉터 및 에미터 양단에 유기된다. 과전압은 어떤 경우에는 소자의 정격전압을 초과할 수도 있다. 일반적으로 부하전류가 클수록 과전압의 크기(dVCE/dt) 는 증가하게 된다. 따라서 이러한 특성에 적절하게 대응할 수 있도록 전류의 크기에 따라 과전압의 크기를 보상,억제해줄 수 있는 회로가 필요하게 된다.The slope of the collector current during the IGBT turn-off is very large. Due to this decreasing slope, large voltages are induced across the collector and emitter even by small stray inductances in the circuit. The overvoltage may in some cases exceed the rated voltage of the device. In general, as the load current increases, the magnitude of the overvoltage (dVCE / dt) increases. Therefore, a circuit capable of compensating and suppressing the magnitude of the overvoltage according to the magnitude of the current is required to properly cope with this characteristic.
도 1 은 본 발명상으로 실시되는 IGBT 과전압회로가 개재된 과전류 검출회로1 is an overcurrent detection circuit interposed with an IGBT overvoltage circuit implemented according to the present invention.
도 2 는 기존의 턴-오프(Turn-off) 회로도2 is a conventional turn-off circuit diagram.
도 3 은 본 발명상으로 실시되는 턴-오프(Turn-off)회로도3 is a turn-off circuit diagram implemented in accordance with the present invention.
＜도면의 주요부분에 대한 부호설명＞<Code Description of Main Parts of Drawing>
1 : 푸쉬풀앰프 2 : 게이트 3 : 커패시터1: push-pull amplifier 2: gate 3: capacitor
4,16 : 다이오드 5,10,10a : 저항 11 : OP앰프4,16 diode 5,10,10a resistor 11 op amp
12,12a,12b,12c : 스위칭 13 : 콘덴서 14 : HPF12, 12a, 12b, 12c: Switching 13: Capacitor 14: HPF
15 : 트랜지스터15: transistor
상기와 같은 문제점을 해결하기 위하여 첨부한 도면 도 3 에 도시한 바와 같이 2개의 저항(10)(10a)이 직렬연결되고 두저항(10)(10a) 사이에 OP앰프(11)가 연결되되 OP앰프(11) 일측극선과 스위칭(S1)(12)이 될 수 있게 결선하며 OP앰프(11) 타측극선은 콘덴서(13)와 연결하고 콘덴서(13)는 두 개의 저항(10b)(10c)과 병렬연결되며 저항(10c)와 스위칭(S2)(12a)이 될 수 있게 결선하며 콘덴서(13)는 또한 HPF(14)와 연결하며 HPF(14)는 스위칭(S3)(12b)(12c)(S4)이 될 수 있게 병렬연결하고 이것은 다시 트랜지스터(15)와 연결하며 트랜지스터(15)의 에미터와 다이오드(16) 입력측과 연결하며 다이오드(16) 출력측은 푸쉬풀앰프(1)를 통과하여 게이트로 연결되게 회로를 구성한다.In order to solve the above problems, as shown in FIG. 3, two resistors 10 and 10a are connected in series and an OP amplifier 11 is connected between the two resistors 10 and 10a. One end pole of the amplifier 11 is connected to the switching (S1) 12, and the other pole of the OP amplifier 11 is connected to the capacitor 13, and the capacitor 13 is connected to two resistors 10b and 10c. It is connected in parallel and can be connected to the resistor 10c and the switching (S2) 12a. The capacitor 13 is also connected to the HPF 14 and the HPF 14 is connected to the switching (S3) 12b and 12c ( Parallel to S4), which in turn connects to transistor 15, to the emitter of transistor 15 and to the diode 16 input side, and the diode 16 output side passes through push-pull amplifier 1 to the gate. Configure the circuit to be connected to
상기와 같이 구성된 본 발명의 작용을 설명하면 본 발명상으로 실시되는 회로인 아답티브(adaptive) 턴-오프회로는 회로를 동작시키기 위한 4개의 스위치(12)(12a)(12b)(12c)로 구성되게 하였다. S1(12) 은 오프구간에서 아답티브회로가 동작하도록 선택하는 회로로서 턴-온시 개방되고 턴-오프시 직류전압을 통과시킨다. 단락회로의 경우 콜렉터-에미터 전압이 DC-링크 전압에 도달한 후 턴-오프 제어신호가 인가된다. 이러한 동작모드상황에서는 본 발명상의 회로입력은 정상상태에서 보다 더욱 큰 기울기를 가지고 상승하게 되므로 미분회로의 특성으로 인해 아답티브 과전압 제어(제한)회로의 동작은 더욱 효과적으로 작용한다. 그리고 스위치 S2(12a)를 단락시키므로 미분기의 시상수가 증가하게 된다. 따라서 단락회로의 발생시 아답티브 과전압 제한회로의 동작은 더욱 효과적으로 작용한다. S3(12b)의 단락구간에서 아답티브 회로의 고대역통과여과필터를 동작하도록 선택하는 회로로 턴-온시 개방되고 턴-오프시 직류전압을 통과시키며 S4(12c)회로는 오프시 IGBT를 다시 턴-온시키도록 하는 전압의 전위를 결정한다.Referring to the operation of the present invention configured as described above, the adaptive turn-off circuit, which is a circuit implemented according to the present invention, is composed of four switches 12, 12a, 12b, and 12c for operating the circuit. It was made up. S1 (12) is a circuit that selects the adaptive circuit to operate in the off section and is open at turn-on and passes a DC voltage at turn-off. In the case of a short circuit, the turn-off control signal is applied after the collector-emitter voltage reaches the DC-link voltage. In such an operation mode situation, the circuit input according to the present invention rises with a larger slope than in the normal state, so that the operation of the adaptive overvoltage control (limiting) circuit works more effectively due to the characteristics of the differential circuit. Since the switch S2 12a is shorted, the time constant of the differentiator is increased. Therefore, when the short circuit occurs, the operation of the adaptive overvoltage limiting circuit works more effectively. The circuit selects to operate the high-pass filter of the adaptive circuit in the short section of S3 (12b), which is open at turn-on and passes the DC voltage at turn-off, and the S4 (12c) circuit turns the IGBT again when off. -Determine the potential of the voltage to be turned on.
본 발명상으로 실시되는 아답티브 턴-오프회로는 IGBT 주변에 과전압을 제어하는 별도의 회로가 필요없음에 따라 과전류검출회로시스템 구성 및 제작시 그 제작비를 낮출수 있으며 기기의 동작에 대한 신뢰성을 높일 수 있는 효과가 있다.The adaptive turn-off circuit implemented according to the present invention can reduce the manufacturing cost when constructing and fabricating the overcurrent detection circuit system because it does not need a separate circuit for controlling the overvoltage around the IGBT and improve the reliability of the operation of the device. It can be effective.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019980008022A KR100261531B1 (en) | 1998-03-04 | 1998-03-11 | The excessive voltage control circuit of both end of igbt |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019980003064 | 1998-03-04 | ||
| KR1019980008022A KR100261531B1 (en) | 1998-03-04 | 1998-03-11 | The excessive voltage control circuit of both end of igbt |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR2019980003064 Division | 1998-03-04 | 1998-03-04 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR19990074435A KR19990074435A (en) | 1999-10-05 |
| KR100261531B1 true KR100261531B1 (en) | 2000-07-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019980008022A KR100261531B1 (en) | 1998-03-04 | 1998-03-11 | The excessive voltage control circuit of both end of igbt |
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| KR (1) | KR100261531B1 (en) |
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1998
- 1998-03-11 KR KR1019980008022A patent/KR100261531B1/en not_active IP Right Cessation
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| KR19990074435A (en) | 1999-10-05 |
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