KR100259406B1 - Cold sintering type board and manufacturing method thereof - Google Patents

Cold sintering type board and manufacturing method thereof Download PDF

Info

Publication number
KR100259406B1
KR100259406B1 KR1019970078334A KR19970078334A KR100259406B1 KR 100259406 B1 KR100259406 B1 KR 100259406B1 KR 1019970078334 A KR1019970078334 A KR 1019970078334A KR 19970078334 A KR19970078334 A KR 19970078334A KR 100259406 B1 KR100259406 B1 KR 100259406B1
Authority
KR
South Korea
Prior art keywords
mol
oxide
low temperature
temperature sintering
substrate material
Prior art date
Application number
KR1019970078334A
Other languages
Korean (ko)
Other versions
KR19990058244A (en
Inventor
이준석
임정택
Original Assignee
김종수
엘지정밀주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김종수, 엘지정밀주식회사 filed Critical 김종수
Priority to KR1019970078334A priority Critical patent/KR100259406B1/en
Publication of KR19990058244A publication Critical patent/KR19990058244A/en
Application granted granted Critical
Publication of KR100259406B1 publication Critical patent/KR100259406B1/en

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/03—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on magnesium oxide, calcium oxide or oxide mixtures derived from dolomite
    • C04B35/04—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on magnesium oxide, calcium oxide or oxide mixtures derived from dolomite based on magnesium oxide
    • C04B35/043—Refractories from grain sized mixtures
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/10—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminium oxide
    • C04B35/101—Refractories from grain sized mixtures
    • C04B35/1015—Refractories from grain sized mixtures containing refractory metal compounds other than those covered by C04B35/103 - C04B35/106
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/14—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on silica
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/44—Metal salt constituents or additives chosen for the nature of the anions, e.g. hydrides or acetylacetonate
    • C04B2235/442—Carbonates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64—Burning or sintering processes

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Compositions Of Oxide Ceramics (AREA)

Abstract

PURPOSE: A low temperature sintering substrate material powder is provided, which has a calcining temperature of not more than 1,000 deg.C and a resistance of not less than 1012ohm·centimeter. Therefore, it is applicable to ceramics low temperature sintering multilayered substrate. Also, a method for preparing the same is provided. CONSTITUTION: The method comprises steps of: (i) ball-milling the powder constituted by adding 1-5 wt.% of ZnO and 1-5 wt.% of CeO2, or 1-5 wt.% of BaCO3 and 1-5 wt.% of CeO2, or 1-5 wt.% of BaCO3 and 1-5 wt.% of NaCO3 to a basic composition comprising 19-36 mol.% of MgO, 14-36 mol.% of Al2O3, 44-62 mol.% of SiO2 and 0.5-1 mol.% of B2O3 with deionized water; (ii) calcining the dried powder of the step (i) in an alumina crucible at a temperature of 1,400-1,500 deg.C for 2 hours to completely melt the powder and then lowering the temperature of the molten material at room temperature to form glass; (iii) ball-milling the glass with zirconia ball and drying the ball-milled glass; (iv) mixing the powder of the step (iii) with binding agent by mortar; (v) preparing sample having a diameter of 10 millimeter and a thickness of 2 millimeter from the mixture of the step (iv) by using a hydraulic press; and (vi) putting the prepared sample on an alumina setter and sintering it at a temperature of 850-950 deg.C. The low temperature sintering substrate materials powder contains 19-36 mol.% of MgO, 14-36 mol.% of Al2O3, 44-62 mol.% of SiO2 and 0.5-1 mol.% of B2O3 and further contains 1-5 wt.% of ZnO and 1-5 wt.% of CeO2, or 1-5 wt.% of BaCO3 and 1-5 wt.% of CeO2, or 1-5 wt.% of BaCO3 and 1-5 wt.% of NaCO3.

Description

저온 소결용 기판재료 분말 및 그 제조방법Low temperature sintering substrate material powder and its manufacturing method

본 발명은 산화마그네슘, 산화알루미늄, 산화규소, 산화붕소, 산화아연, 산화세슘, 탄산바륨, 탄산나트륨을 주성분으로 한 저온소결용 분말에 관한 것으로, 특히 소성온도가 1000℃이하이며, 저항이 1× 1012Ωcm 이상인 조성물로 세라믹스 저온소결용 다층기판에 이용할 수 있는 저온소결용 기판재료 분말에 관한 것이다.The present invention relates to a powder for low-temperature sintering mainly composed of magnesium oxide, aluminum oxide, silicon oxide, boron oxide, zinc oxide, cesium oxide, barium carbonate and sodium carbonate. It relates to a low-temperature sintering substrate material powder that can be used in ceramic low-temperature sintering multilayer substrates having a composition of 10 12 Ωcm or more.

일반적으로, 세라믹스 다층기판재료로는 90% 이상의 산화알루미늄을 사용하여 1600℃ 이상의 고온에서 소결하는 고온소결용 다층기판이 있고, 유리질을 주성분으로 하여 1000℃ 이하의 온도에서 소결이 가능한 저온소결용 다층기판이 있다.In general, ceramic multilayer substrate materials include high temperature sintering multilayer substrates sintered at a high temperature of 1600 ° C. or more using 90% or more of aluminum oxide, and low temperature sintering multilayers capable of sintering at temperatures of 1000 ° C. or less based on glass as a main component. There is a substrate.

현재 고온소결용 다층기판은 단판형이거나 간단한 모양의 패키지(Package)용으로 사용되고 있으나, 기판의 크기를 줄이는데 한계를 나타내고 있다. 이에 비하여 저온소결용 다층기판은 다층구조로 할 수 있으며, 저항이 낮은 은전극을 사용하여 전송속도를 높일 수 있다. 또한, 콘덴서나 저항기, 코일 등과 같은 여러 수동부품들을 내장할 수 있어서 고온소결용 다층기판에 비해 크기를 줄이는 것이 유리하다.Currently, high temperature sintered multilayer boards are used for package of single plate type or simple shape, but they show limitations in reducing the size of the substrate. On the other hand, low-temperature sintering multi-layer boards can have a multi-layer structure, and the transmission speed can be increased by using a silver electrode having a low resistance. In addition, since several passive components such as a capacitor, a resistor, a coil, and the like can be embedded, it is advantageous to reduce the size of the multilayer board for high temperature sintering.

이러한 저온소결용 다층기판을 이용하여 시판되는 제품으로는 파워앰프모듈(PAM), 전압조절진동자(VCO), 커플러(Coupler) 등의 제품이 있다.Commercially available products using such low-temperature sintering multilayer boards include power amplifier modules (PAMs), voltage controlled oscillators (VCOs), and couplers (Coupler).

종래의 저온소결용 기판재료로는 알루미나와 붕규산유리를 혼합하는 방법이 대표적으로 제시되고 있지만, 유리를 제작하여 알루미나 분말과 혼합하는 공정이 필요하고, 붕규산유리와 알루미나의 첨가량에 의해 전기적 특성과 물리적 특성이 좌우되었다.Conventionally, a low temperature sintering substrate material has been suggested as a method of mixing alumina and borosilicate glass. However, a process of manufacturing glass and mixing it with alumina powder is required, and the electrical properties and physical properties of the borosilicate glass and alumina are added. The characteristics were influenced.

그런데, 이와 같이 구성된 종래의 알루미나와 붕규산유리의 혼합물에서는 알루미나가 필러(Filler)로서 작용하여 전체구조를 지지하는 역할을 하고 붕규산유리에 의해 알루미나 분말을 연결시켜주는 역할을 하는데, 붕규산유리와 알루미나의 조화가 이루어져야 하고, 은전극을 사용하여 동시 소성이 이루어지기 때문에 960℃이하의 온도에서 소결이 이루어져야 하는 문제점이 있었다.However, in the conventional mixture of alumina and borosilicate glass configured as described above, alumina acts as a filler to support the entire structure and connects alumina powder by borosilicate glass. There is a problem that the sintering should be made at a temperature of 960 ° C. or less because the co-firing is to be performed and the co-firing is performed using the silver electrode.

따라서, 본 발명은 상기 문제점을 해결하기 위하여 안출된 것으로, 본 발명의 목적은 소성온도가 1000℃이하이며, 저항이 1×1012Ωcm 이상인 조성물로 세라믹스 저온소결용 다층기판에 이용할 수 있는 저온소결용 기판재료 분말을 제공하는데 있다.Accordingly, the present invention has been made to solve the above problems, the object of the present invention is a low temperature sintering that can be used in a multilayer substrate for low temperature sintering of ceramics with a composition having a firing temperature of less than 1000 ℃, resistance of 1 × 10 12 Ωcm It is to provide a substrate material powder for.

도1 내지 도5는 본 발명에 의한 저온 소결용 기판재료 분말을 알루미나 세터에 놓고 850∼950℃의 온도로 소결한 후 1∼40MHz 범위에서 측정한 유전율, 유전손실 및 절연저항값을 나타낸 도표.1 to 5 are diagrams showing the dielectric constant, dielectric loss and insulation resistance measured in the range of 1 to 40 MHz after sintering the substrate material powder for low temperature sintering according to the present invention in an alumina setter and sintering at a temperature of 850 to 950 ° C.

상기 목적을 달성하기 위하여, 본 발명의 저온소결용 기판재료 분말 제조방법은, 산화마그네슘, 알루미나, 산화규소, 산화붕소, 산화아연, 산화세슘, 탄산바륨, 탄산나트륨을 평량하여, 탈이온수와 함께 볼밀링 방법을 이용하며 적당한 비율로 혼합하는 과정과, 상기 과정에서 건조된 분말을 알루미나 도가니에 담아서 1400∼1500℃에서 2시간 소성하여 완전히 녹인 다음 상온으로 온도를 떨어뜨려 유리를 생성시키는 과정과, 상기 과정에서 만들어진 유리는 다시 지르코니아 볼을 사용하여 볼밀링을 하고 건조하여, 분말과 결합제를 유발로 혼합하고, 유압프레스를 사용해 직경 10mm, 두께 2mm의 시편을 제작하는 과정과, 상기 제작한 시편을 알루미나 세터에 놓고, 850∼950℃의 온도로 2시간 소결시키는 과정을 구비하여 이루어진 것을 특징으로 한다.In order to achieve the above object, the low-temperature sintering substrate material powder production method of the present invention, magnesium oxide, alumina, silicon oxide, boron oxide, zinc oxide, cesium oxide, barium carbonate, sodium carbonate, and weighed together with deionized water The process of mixing at an appropriate ratio using a milling method, and the powder dried in the above process in alumina crucible and calcined at 1400 ~ 1500 ℃ for 2 hours to completely melt and then drop the temperature to room temperature to produce a glass, and The glass produced in the process is again ball milled using a zirconia ball and dried, mixed with powder and a binder, and a hydraulic press is used to prepare a specimen having a diameter of 10 mm and a thickness of 2 mm, and the prepared specimen is alumina. Placed in the setter, characterized in that it was provided with a step of sintering at a temperature of 850 ~ 950 ℃ for 2 hours.

상기 목적을 달성하기 위하여, 본 발명의 저온소결용 기판재료 분말은 산화마그네슘(MgO) 19∼36mol%, 알루미나(Al2O3) 14∼36mol%, 산화규소(SiO2) 44∼62mol%, 산화붕소(B2O3) 0.5∼1mol%를 기본조성으로 이루어진 것을 특징으로 한다.In order to achieve the above object, the low-temperature sintering substrate material powder of the present invention is magnesium oxide (MgO) 19-36 mol%, alumina (Al 2 O 3 ) 14-36 mol%, silicon oxide (SiO 2 ) 44-62 mol%, Boron oxide (B 2 O 3) It is characterized by consisting of 0.5 to 1 mol% in the basic composition.

여기서, 본 발명은 산화아연(ZnO) 1∼5wt%, 산화세슘(CeO2) 1∼5wt%을, 또는 산화아연(ZnO) 1∼5wt%, 탄산바륨(BaCO3) 1∼5wt%을, 또는 산화세슘(CeO2) 1∼5wt%, 탄산나트륨(NaCO3) 1∼5wt%을, 또는 탄산바륨(BaCO3) 1∼5wt%, 탄산나트륨(NaCO3) 1∼5wt%을 추가로 첨가하는 것이 바람직하다.In the present invention, 1-5 wt% of zinc oxide (ZnO), 1-5 wt% of cesium oxide (CeO 2 ), 1-5 wt% of zinc oxide (ZnO), 1-5 wt% of barium carbonate (BaCO 3 ), Or 1 to 5 wt% of cesium oxide (CeO 2 ), 1 to 5 wt% of sodium carbonate (NaCO 3 ), or 1 to 5 wt% of barium carbonate (BaCO 3 ), and 1 to 5 wt% of sodium carbonate (NaCO 3 ). desirable.

이하, 본 발명의 일실시예에 관하여 첨부도면을 참조하면서 상세히 설명한다.Hereinafter, an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

도1 내지 도5는 본 발명에 의한 저온 소결용 기판재료 분말을 알루미나 세터에 놓고 850∼950℃의 온도로 소결한 후 1∼40MHz 범위에서 측정한 유전율, 유전손실 및 절연저항값을 나타낸 도표이다.1 to 5 are diagrams showing the dielectric constant, dielectric loss and insulation resistance measured in the range of 1 to 40 MHz after sintering the substrate material powder for low temperature sintering according to the present invention in an alumina setter and sintering at a temperature of 850 to 950 ° C. .

먼저, 본 발명의 구성물질은 산화마그네슘(MgO) 19∼36mol%, 알루미나(Al2O3) 14∼36mol%, 산화규소(SiO2) 44∼62mol%, 산화붕소(B2O3) 0.5∼1mol%, 산화아연(ZnO) 1∼5wt%, 산화세슘(CeO2) 1∼5wt%, 탄산바륨(BaCO3) 1∼5wt%, 탄산나트륨(NaCO3) 1∼5wt%를 기본 조성으로 하는 저온소결용 분말이다.First, the constituents of the present invention are magnesium oxide (MgO) 19-36 mol%, alumina (Al 2 O 3 ) 14-36 mol%, silicon oxide (SiO 2 ) 44-62 mol%, boron oxide (B 2 O 3 ) 0.5 -1 mol%, zinc oxide (ZnO) 1-5 wt%, cesium oxide (CeO 2 ) 1-5 wt%, barium carbonate (BaCO 3 ) 1-5 wt%, sodium carbonate (NaCO 3 ) 1-5 wt% Low temperature sintering powder.

상기 각 조성물의 특성 및 역할을 설명하면 다음과 같다.Referring to the characteristics and roles of each composition is as follows.

산화마그네슘, 알루미나, 산화규소 등은 결정화 유리를 만드는 기본성분이다.Magnesium oxide, alumina, silicon oxide and the like are the basic ingredients for making crystallized glass.

산화아연과 산화 세슘은 소성온도를 낮춰주며 너무 적게 첨가하면 소성온도가 낮아지지 않고, 너무 많이 첨가하면 전기저항이 떨어진다.Zinc oxide and cesium oxide lower the firing temperature, and when added too little, the firing temperature does not decrease.

탄산바륨과 탄산 나트륨은 결정화 유리 생성시 산화마그네슘 대신에 첨가되는 성분으로 너무 적게 첨가하면 소결온도가 낮아지지 않고, 너무 많이 첨가하면 손실값이 감소한다.Barium carbonate and sodium carbonate are components added in place of magnesium oxide in the production of crystallized glass, and when added too little, the sintering temperature does not decrease, and when added too much, the loss value decreases.

상기 본 발명의 구성을 실현하는 실시예를 자세히 설명한다.The embodiment which realizes the structure of this invention mentioned above is explained in full detail.

먼저, 도1 내지 도5에 표기된 비율이 되도록 출발물질인 산화마그네슘, 알루미나, 산화규소, 산화붕소, 산화아연, 산화 세슘, 탄산바륨, 탄산나트륨을 평량하여, 탈이온수와 함께 혼합한다. 이때 혼합은 볼밀링(Ball Milling) 방법을 이용하며, 알루미나볼과 지르코니아 자(jar)를 사용한다.First, magnesium oxide, alumina, silicon oxide, boron oxide, zinc oxide, cesium oxide, barium carbonate, and sodium carbonate are weighed out so as to be in the ratios shown in FIGS. 1 to 5, and mixed with deionized water. At this time, the mixing is performed using a ball milling method, and alumina balls and zirconia jars are used.

건조된 분말은 알루미나 도가니에 담아서 1400∼1500℃ 2시간 소성하여 완전히 녹인 다음 상온으로 온도를 떨어뜨려 유리를 생성시킨다. 만들어진 유리는 다시 지르코니아 볼을 사용하여 볼밀링을 하고 건조하여, 분말과 결합제를 유발로 혼합하고, 유압프레스를 사용해 직경 10mm, 두께 2mm의 시편을 제작한다.The dried powder is put in an alumina crucible and calcined at 1400-1500 ° C. for 2 hours to completely dissolve and then drop the temperature to room temperature to form glass. The resulting glass is again ball milled using zirconia balls, dried, mixed with powders and binders, and a hydraulic press is used to produce specimens 10 mm in diameter and 2 mm thick.

이렇게 제작한 시편을 알루미나 세터(Al2O3Setter)에 놓고, 850∼950℃의 온도로 2시간 소결한 후 1∼40MHz 범위에서 유전율, 유전손실, 절연저항 값을 측정하였다.The specimen thus prepared was placed in an alumina setter (Al 2 O 3 Setter), and then sintered at a temperature of 850 to 950 ° C. for 2 hours, and then measured for dielectric constant, dielectric loss, and insulation resistance in the range of 1 to 40 MHz.

앞에서 설명한 바와 같이, 본 발명의 저온소결용 기판재료 분말에 의하면, 소성온도가 1000℃이하이며, 저항이 1× 1012Ωcm 이상인 조성물로 세라믹스 저온소결용 다층기판에 이용할 수 있는 효과가 있다.As described above, according to the low temperature sintering substrate material powder of the present invention, the firing temperature is 1000 ° C. or less, and the resistance is 1 × 10 12 Ωcm or more.

아울러 본 발명의 바람직한 실시예들은 예시의 목적을 위해 개시된 것이며, 당업자라면 본 발명의 사상과 범위 안에서 다양한 수정, 변경, 부가등이 가능할 것이며, 이러한 수정 변경등은 이하의 특허청구범위에 속하는 것으로 보아야 할 것이다.In addition, preferred embodiments of the present invention are disclosed for the purpose of illustration, those skilled in the art will be able to various modifications, changes, additions, etc. within the spirit and scope of the present invention, these modifications and changes should be seen as belonging to the following claims. something to do.

Claims (5)

저온소결용 기판재료 분말 제조방법에 있어서, 19~36 mol%의 산화마그네슘(MgO), 14~36 mol%의 알루미나(Al2O3) 44∼62mol%의 산화규소(SiO2) 그리고 0.5~1mol%의 산화붕소(B2O3)를 기본조성으로 하고, 산화아연(ZnO) 1∼5wt% 및 산화세슘(CeO2) 1∼5wt%, 산화아연(ZnO) 1~5wt% 및 탄산바륨(BaCO3) 1∼5wt%, 산화 세슘(CeO2) 1~5wt% 및 탄산나트륨(NaCO3) 1∼5wt% 또는 탄산바륨(BaCO3) 1~5wt%를 첨가하여 구성한 분말을 탈이온수와 함께 볼밀링 방법을 이용하여 혼합하는 과정과, 상기 과정에서 건조된 분말을 알루미나 도가니에 담아서 1400∼1500℃ 2시간 소성하여 완전히 녹인 다음 상온으로 온도를 떨어뜨려 유리를 생성시키는 과정과, 상기 과정에서 만들어진 유리를 다시 지르코니아 볼을 사용하여 볼밀링을 하고 건조하여, 분말과 결합제를 유발로 혼합하고, 유압프레스를 사용해 직경 10 mm, 두께 2mm의 시편을 제작하는 과정과, 상기 제작한 시편을 알루미나 세터에 놓고, 850∼950℃의 온도로 2시간 소결시키는 과정을 구비하여 이루어진 것을 특징으로 하는 저온소결용 기판재료 분말제조방법.In the low temperature sintering substrate material powder manufacturing method, 19-36 mol% magnesium oxide (MgO), 14-36 mol% alumina (Al 2 O 3 ) 44-62 mol% silicon oxide (SiO 2 ) and 0.5- 1 mol% boron oxide (B 2 O 3 ) as a basic composition, 1-5 wt% zinc oxide (ZnO), 1-5 wt% cesium oxide (CeO 2 ), 1-5 wt% zinc oxide (ZnO) and barium carbonate 1-5 wt% (BaCO 3 ), 1-5 wt% of cesium oxide (CeO 2 ) and 1-5 wt% of sodium carbonate (NaCO 3 ) or 1-5 wt% of barium carbonate (BaCO 3 ) together with deionized water The process of mixing using a ball milling method, the powder dried in the above process is put in an alumina crucible and calcined at 1400-1500 ° C. for 2 hours to completely dissolve and then drop the temperature to room temperature to generate glass, and The glass is again ball milled with zirconia balls and dried, mixed with powder and binder in a mortar, using a hydraulic press A substrate material powder for low temperature sintering comprising the steps of preparing a specimen having a diameter of 10 mm and a thickness of 2 mm, and placing the prepared specimen in an alumina setter and sintering at a temperature of 850 to 950 ° C. for 2 hours. Manufacturing method. 저온소결용 기판재료 분말에 있어서, 산화마그네슘(MgO), 19~36mol%의 알루미나(Al2O3) 14∼36mol%의 산화규소(SiO2) 44~62mol%, 산화붕소(B2O3) 0.5~1mol%를 기본조성으로 하고, 산화아연(ZnO) 5wt%, 산화 세슘(CeO2) 1∼5wt%을 추가로 첨가한 것을 특징으로 하는 저온소결용 기판재료 분말.Low temperature sintering substrate material powder, magnesium oxide (MgO), 19-36 mol% alumina (Al 2 O 3 ) 14-36 mol% silicon oxide (SiO 2 ) 44-62 mol%, boron oxide (B 2 O 3 A substrate material powder for low temperature sintering characterized in that 0.5 to 1 mol% is used as a basic composition, and zinc oxide (ZnO) 5 wt% and cesium oxide (CeO 2 ) 1 to 5 wt% are further added. 저온소결용 기판재료 분말에 있어서, 산화마그네슘(MgO) 19~36mol%, 알루미나(Al2O3) 14~36mol%, 산화규소(SiO2) 44∼62mol% 산화붕소(B2O3) 0.5∼1mol%를 기본조성으로 하고 산화아연(ZnO) 1∼5wt%, 탄산바륨(BaCO3) 1∼5wt%을 추가로 첨가한 것을 특징으로 하는 저온소결용 기판재료 분말.Low temperature sintering substrate material powder: magnesium oxide (MgO) 19-36 mol%, alumina (Al 2 O 3 ) 14-36 mol%, silicon oxide (SiO 2 ) 44-62 mol% boron oxide (B 2 O 3 ) 0.5 A low-temperature sintering substrate material powder comprising 1 mol% of zinc oxide (ZnO) and 1-5 wt% of barium carbonate (BaCO 3 ). 저온소결용 기판재료 분말에 있어서, 산화마그네슘(MgO) 19~36mol%, 알루미나(Al2O3) 14~36mol%, 산화규소(SiO2) 44~62mol%, 산화붕소(B2O3) 0.5~1mol%를 기본조성으로 하고, 산화세슘(CeO2) 1~5wt%, 탄산나트륨(NaCO3) 1∼5wt%을 추가로 첨가한 것을 특징으로 하는 저온소결용 기판재료 분말.Low temperature sintering substrate material powder: magnesium oxide (MgO) 19-36 mol%, alumina (Al 2 O 3 ) 14-36 mol%, silicon oxide (SiO 2 ) 44-62 mol%, boron oxide (B 2 O 3 ) A substrate material powder for low temperature sintering comprising 0.5 to 1 mol% as a basic composition, and further adding 1 to 5 wt% of cesium oxide (CeO 2 ) and 1 to 5 wt% of sodium carbonate (NaCO 3 ). 저온소결용 기판재료 분말에 있어서, 산화마그네슘(MgO) 19~36mol%, 알루미나(Al2O3) 14~36mol%, 산화규소(SiO2) 44~62mol%, 산화붕소(B2O3) 0.5~1mol%를 기본조성으로 하고, 탄산바륨(BaCO3) 1~5wt%, 탄산나트륨(NaCO3) 1∼5wt%을 추가로 첨가한 것을 특징으로 하는 저온소결용 기판재료 분말.Low temperature sintering substrate material powder: magnesium oxide (MgO) 19-36 mol%, alumina (Al 2 O 3 ) 14-36 mol%, silicon oxide (SiO 2 ) 44-62 mol%, boron oxide (B 2 O 3 ) A substrate material powder for low temperature sintering comprising 0.5 to 1 mol% as a basic composition, and further adding 1 to 5 wt% of barium carbonate (BaCO 3 ) and 1 to 5 wt% of sodium carbonate (NaCO 3 ).
KR1019970078334A 1997-12-30 1997-12-30 Cold sintering type board and manufacturing method thereof KR100259406B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019970078334A KR100259406B1 (en) 1997-12-30 1997-12-30 Cold sintering type board and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019970078334A KR100259406B1 (en) 1997-12-30 1997-12-30 Cold sintering type board and manufacturing method thereof

Publications (2)

Publication Number Publication Date
KR19990058244A KR19990058244A (en) 1999-07-15
KR100259406B1 true KR100259406B1 (en) 2000-06-15

Family

ID=19529813

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970078334A KR100259406B1 (en) 1997-12-30 1997-12-30 Cold sintering type board and manufacturing method thereof

Country Status (1)

Country Link
KR (1) KR100259406B1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109133911A (en) * 2018-09-25 2019-01-04 桂林电子科技大学 A kind of method of ultra-low temperature cold sintering zno-based ceramics
CN109867519A (en) * 2019-04-25 2019-06-11 重庆大学 A kind of high-potential gradient ZnO voltage-sensitive ceramic and preparation method thereof

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100832814B1 (en) * 2007-02-20 2008-05-28 (주)동화라이징 Binder composition for low temperature calcination
CN115806390A (en) * 2021-09-15 2023-03-17 浙江矽瓷科技有限公司 Low-temperature co-fired ceramic powder and preparation method and application thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0274558A (en) * 1988-09-12 1990-03-14 Mitsubishi Electric Corp Ceramic base plate

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0274558A (en) * 1988-09-12 1990-03-14 Mitsubishi Electric Corp Ceramic base plate

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109133911A (en) * 2018-09-25 2019-01-04 桂林电子科技大学 A kind of method of ultra-low temperature cold sintering zno-based ceramics
CN109867519A (en) * 2019-04-25 2019-06-11 重庆大学 A kind of high-potential gradient ZnO voltage-sensitive ceramic and preparation method thereof
CN109867519B (en) * 2019-04-25 2022-04-15 重庆大学 High potential gradient ZnO voltage-sensitive ceramic and preparation method thereof

Also Published As

Publication number Publication date
KR19990058244A (en) 1999-07-15

Similar Documents

Publication Publication Date Title
US4812422A (en) Dielectric paste and method of manufacturing the paste
CN109467426A (en) A kind of low-temperature co-fired ceramic substrate material and preparation method thereof
KR20020088527A (en) Dielectric Ceramic Compositions and Manufacturing Method of Multilayer components thereof
CN1872753A (en) Ceramic material of microcrystalline glass, and preparation method
CN104774005A (en) Low-temperature sintered lead-free microwave dielectric ceramic and preparation method thereof
KR20040085939A (en) Low dielectric constant, low temperature fired ceramics
Wang et al. Synthesis and characterization of low CTE value La2O3-B2O3-CaO-P2O5 glass/cordierite composites for LTCC application
CN101092300A (en) Dielectric adjustable material of ceramics burned together at low temperature, and preparation method
KR100704318B1 (en) Low-temperature Firing Low Dielectric constant Dielectric Composition
JP5803453B2 (en) Glass ceramic dielectric material and glass ceramic dielectric
KR100259406B1 (en) Cold sintering type board and manufacturing method thereof
KR100444224B1 (en) Dielectric Ceramic Compositions
KR100401942B1 (en) Dielectric Ceramic Compositions and Manufacturing Process the same
CN109180173A (en) A kind of low temperature sintering microwave ceramic material and preparation method thereof
US4939106A (en) Sintered ceramic body
KR100401943B1 (en) Dielectric Ceramic Compositions and Manufacturing Method using the same compositions
KR20040085938A (en) Low-fire high-permittivity dielectric compositions
JPH01141837A (en) Material for dielectric body for circuit substrate
KR100479688B1 (en) Dielectric ceramic composition and method for preparing dielectric ceramic for low temperature co-fired ceramic
JP2000211969A (en) Porcelain fired at lower temperature and electronic parts equipped therewith
JP3287303B2 (en) Dielectric ceramic composition and ceramic electronic component using the same
JPS62252340A (en) Sintered glass and sintered glass ceramic
JPH0517211A (en) Substrate material and circuit substrate
JPH01132194A (en) Wiring board
KR20200081774A (en) Dielectric ceramics composition for high frequency device, ceramic substrate thereby and manufacturing method thereof

Legal Events

Date Code Title Description
A201 Request for examination
N231 Notification of change of applicant
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20040318

Year of fee payment: 5

LAPS Lapse due to unpaid annual fee