KR100259066B1 - Solid state imaging device manufacturing method - Google Patents
Solid state imaging device manufacturing method Download PDFInfo
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- KR100259066B1 KR100259066B1 KR1019920010237A KR920010237A KR100259066B1 KR 100259066 B1 KR100259066 B1 KR 100259066B1 KR 1019920010237 A KR1019920010237 A KR 1019920010237A KR 920010237 A KR920010237 A KR 920010237A KR 100259066 B1 KR100259066 B1 KR 100259066B1
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- color filter
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 5
- 238000003384 imaging method Methods 0.000 title claims description 8
- 239000007787 solid Substances 0.000 title 1
- 239000000463 material Substances 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 7
- 239000002184 metal Substances 0.000 claims description 6
- 238000007789 sealing Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims 2
- 238000000059 patterning Methods 0.000 claims 1
- 238000002834 transmittance Methods 0.000 abstract description 6
- 230000007423 decrease Effects 0.000 abstract description 2
- 238000007796 conventional method Methods 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
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- Solid State Image Pick-Up Elements (AREA)
Abstract
본 발명은 고체 촬상소자에 관한 것으로써, 종래의 고체 촬상소자의 제조방법에 있어서 마이크로렌즈의 두께를 2-3㎛ 정도로 형성함에 따라 마이크로렌즈의 곡률반경이 커져, 촛점거리가 길어지므로 포토다이오드에 촛점이 맺히도록 포토다이오드에서 칼라필터층까지의 두께(t1)가 커지게 됨에 의해서 투과율이 저하되고 원가가 상승되는 문제점을 개선하기 위해 마이크로 렌즈의 곡률반경을 작게 형성한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state image pickup device. In the conventional method for manufacturing a solid-state image pickup device, the microlens has a radius of curvature and a focal length increases as the thickness of the microlens is formed to about 2-3 μm. As the thickness t 1 from the photodiode to the color filter layer becomes large so as to form a focus, the curvature radius of the microlens is made small in order to improve the problem that the transmittance decreases and the cost increases.
즉, 본 발명은 칼라필터층 위에 제 1 렌즈재료를 1㎛ 정도 증착하고 종래에 사용했던 마스크를 이용 노광현상하여 양측면이 역삼각형 모양이되도록 형성하고 다시 그 위에 제 2 렌즈재료를 3㎛ 정도 증착하고 상기와 같은 마스크를 이용하여 패터닝하고 열공정으로 리플로우시켜 마이크로렌즈 두께가 4㎛ 정도되도록 형성한다.That is, in the present invention, the first lens material is deposited on the color filter layer by about 1 μm, and the exposure surface is developed using a mask used in the prior art, so that both sides are formed to have an inverted triangle shape, and the second lens material is deposited on the color filter layer by about 3 μm. Patterned using the mask as described above and reflowed by a thermal process to form a microlens thickness of about 4㎛.
따라서 마이크로렌즈 촛점거리가 짧아지므로 포토다이오드에서 칼라필터층까지의 두께가 작아져 투과율이 향상되고 원가절감의 효과가 있다.Therefore, since the focal length of the microlenses is shortened, the thickness from the photodiode to the color filter layer is reduced, thereby improving the transmittance and reducing the cost.
Description
제 1 도는 종래의 고체 촬상소자 구조 단면도1 is a cross-sectional view of a conventional solid-state image sensor structure
제 2 도는 본 발명의 고체 촬상소자 공정 단면도2 is a cross-sectional view of a solid-state imaging device process of the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 실리콘기판 2 : 포토다이오드1 silicon substrate 2 photodiode
3 : 실링용메탈 4 : 평탄층3: sealing metal 4: flat layer
5 : 칼라필터층 6 : 마이크로렌즈5 color filter layer 6 microlens
6a : 제 1 렌즈재료 6b : 제 2 렌즈재료6a: first lens material 6b: second lens material
본 발명은 고체 촬상소자에 관한것으로, 특히 투과율 향상 및 스미어(Smear) 현상을 방지할 수 있도록 한 마이크로 렌즈(micro lens)의 제조방법에 관한것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state image pickup device, and more particularly, to a method of manufacturing a micro lens capable of improving transmittance and preventing smear.
종래의 고체 촬상소자는 제 1 도에 도시한 바와같이 실리콘기판(1)에 빛의 신호를 전기적인 신호로 변환시키는 포토다이오드(2)가 형성되고, 포토다이오드와 포토다이오드 사이의 VCCD영역(Vertical Charge Coupled Device)(도시하지 않음) 상측에 빛의 차광을 위한 실딩(Shielding)용 메탈(metal)(3)이 형성되고 실리용메탈(3)을 칼라필터층이 균일한 막두께를 갖도록 하기 위한 평탄층(4)에 둘러싸여 있다.In the conventional solid-state imaging device, as shown in FIG. 1, a photodiode 2 for converting a light signal into an electrical signal is formed on a silicon substrate 1, and a VCCD region between the photodiode and the photodiode (Vertical) is formed. Charge Coupled Device (not shown) A shielding metal 3 for shielding light is formed on the upper side, and the flat metal for the color filter layer to have a uniform film thickness. It is surrounded by layer 4.
그리고 평탄층(4)위에 칼라필터층(5)이 형성되고 포토다이오드(2) 영역 상측의 칼라필터층위에 VCCD영역의 빛을 효과적으로 포토다이오드(2) 영역에 집속시키기 위한 마이크로렌즈(6)가 형성된 구조이다.In addition, the color filter layer 5 is formed on the flat layer 4, and the microlens 6 is formed on the color filter layer above the photodiode 2 region to effectively focus the light of the VCCD region to the photodiode 2 region. to be.
그러나 이와같은 종래의 고체 촬상소자에 있어서는 포토다이오드(2)에서 부터 칼라필터층(5)까지의 두께(t1)는 8-9㎛정도 형성되어져 있으며, 이는 마이크로렌즈(6)층의 두께(t2)에 따라 결정되어진다.However, in the conventional solid-state imaging device, the thickness t 1 from the photodiode 2 to the color filter layer 5 is formed to be about 8-9 μm, which is the thickness t of the microlens 6 layer. 2 ).
여기서, 마이크로렌즈(6)의 두께(t2)가 2-2.3㎛ 정도로 한정되어진 관계로 자연히 마이크로렌즈(6)의 곡률반경이 크게되어 마이크로렌즈(6)의 촛점을 포토다이오드(2) 영역에 맞추다보니, 두께(t1)가 두껍게 된다.Here, the radius of curvature of the microlens 6 is naturally increased because the thickness t 2 of the microlens 6 is limited to about 2-2.3 μm, thereby focusing the microlens 6 on the photodiode 2 region. As a result, the thickness t 1 becomes thicker.
따라서 공정횟수가 많아지고 투과율이 저하될 뿐만 아니라 스미어(Smear)현상이 일어나는 문제점이 있다.Therefore, the number of processes increases and transmittance decreases as well as a smear phenomenon occurs.
본 발명은 이와같은 문제점을 해결하기 위해 안출한 것으로써, 투과율을 향상시키고, 스미어 현상을 방지할 수 있는 고체 촬영소자를 제공하는데 그 목적이 있다.An object of the present invention is to provide a solid-state imaging device capable of improving the transmittance and preventing the smear phenomenon.
이와같은 목적을 달성하기 위한 본 발명은 칼라필터층 위에 마이크로렌즈를 형성시, 마이크로렌즈의 곡률반경을 작게 형성하여, 마이크로 렌즈의 촛점이 짧은 거리에서 맺힐 수 있도록 함으로, 포토다이오드에서 칼라필터층까지의 두께를 작게 한 것이다.In order to achieve the above object, the present invention forms a small curvature radius of the microlens when the microlens is formed on the color filter layer so that the focal point of the microlens can be formed at a short distance, and thus the thickness of the photodiode to the color filter layer. Will be made smaller.
이와같은 본 발명의 고체 촬상소자에 제조방법을 첨부된 도면을 참조하여 보다 상세히 설명하면 다음과 같다.When described in more detail with reference to the accompanying drawings a manufacturing method for a solid-state imaging device of the present invention as follows.
제 2 도는 본 발명의 고체 촬상소자 공정 단면도로써, 제 2 도(a)와 같이 실리콘기판(1)에 실리콘기판(1)과 반대되는 도전형 이온을 소정의 부위에 주입하여 매트릭스 형태의 복수개 포토다이오드(2)영역을 형성하고 포토다이오드(2) 사이에 VCCD영역(도시되지 않음)을 형성한다.FIG. 2 is a cross-sectional view of a solid-state image pickup device according to the present invention. As shown in FIG. 2 (a), a plurality of photos in a matrix form are implanted in a predetermined region by injecting conductive ions opposite to the silicon substrate 1 into a predetermined portion. A diode 2 region is formed and a VCCD region (not shown) is formed between the photodiodes 2.
그리고 VCCD영역 상측에 빛의 차광을 위한 실링용메탈(3)을 형성하고, 실링용메탈(3)이 형성된 부위가 평탄해지도록 평탄층(4)을 형성한 후 그 위에 칼라필터층(5)을 형성한다.Then, the sealing metal 3 for shielding light is formed on the upper side of the VCCD region, and the flat filter layer 4 is formed so that the portion where the sealing metal 3 is formed is flat, and then the color filter layer 5 is formed thereon. Form.
여기서 평탄층(4)과 포토다이오드(2)에서 부터 칼라필터층(5)까지의 두께(t1)는 종래 보다 약 3-4㎛ 정도 낮게 형성한다.Here, the thickness t 1 from the flat layer 4 and the photodiode 2 to the color filter layer 5 is about 3-4 μm lower than that of the related art.
그리고 칼라필터층(5)위에 제 1 렌즈재료(6a)를 1.0㎛ 정도 코팅(coating)하고 종래와 같은 동일한 마스크를 이용하여 포토다이오드(2)영역 상측 부위에 노광량과 현상시간을 조절하여 모서리 부분이 역삼각형 모양이되도록 형성한다.Then, the first lens material 6a is coated on the color filter layer 5 by about 1.0 μm and the exposure amount and the developing time are adjusted on the upper portion of the photodiode region 2 using the same mask as in the prior art. Form to be an inverted triangle shape.
그리고 제 2 도(b)와 같이 제 2 렌즈재료(6b)을 전면에 코팅한 다음 상기와 같은 마스크를 이용하여 노광량, 현상시간을 적절히 조절하여 제 1, 제 2 렌즈재료가 적층되도록 형성한다.Then, as shown in FIG. 2 (b), the second lens material 6b is coated on the entire surface, and then the exposure amount and the developing time are appropriately adjusted using the mask as described above to form the first and second lens materials to be stacked.
이때 제 1, 제 2 렌즈재료(6a, 6b)의 두께는 4㎛ 정도가 되도록 한다.At this time, the thicknesses of the first and second lens materials 6a and 6b are about 4 μm.
그 다음 제 2 도(c)와 같이 열공정을 통하여 렌즈재료(6a, 6b)를 리플로우(reflow)시켜 원하는 구조의 마이크로렌즈를 형성한다.Next, as shown in FIG. 2C, the lens materials 6a and 6b are reflowed through a thermal process to form a microlens having a desired structure.
이상에서 설명한 바와같이 본 발명의 고체 촬상소자에 있어서는 마이크로렌즈의 곡률반경이 작아지므로 해서 촛점거리도 짧아진다.As described above, in the solid-state imaging device of the present invention, the radius of curvature of the microlenses is small, so the focal length is also shortened.
따라서 포토다이오드에서 칼라필터층까지의 두께(t1)가 줄어들기 때문에 공정회수 및 고가인 재료가 절약되어 원가가 절감되고, 투과율이 향상될뿐만 아니라, 스미어 현상 및 렌즈재료가 갖고 있는 낮은 굴절율을 효과적으로 대체할 수 있고 마이크로렌즈 형성시 종래와 같은 마이크 사용이 가능한 효과들이 있다.As a result, the thickness (t 1 ) from the photodiode to the color filter layer is reduced, thereby reducing the number of processes and expensive materials, thereby reducing the cost, improving the transmittance, and effectively reducing the smear phenomenon and the low refractive index of the lens material. There are effects that can be replaced and the use of a microphone as in the prior art in forming a microlens.
Claims (2)
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019920010237A KR100259066B1 (en) | 1992-06-12 | 1992-06-12 | Solid state imaging device manufacturing method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019920010237A KR100259066B1 (en) | 1992-06-12 | 1992-06-12 | Solid state imaging device manufacturing method |
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| Publication Number | Publication Date |
|---|---|
| KR940001429A KR940001429A (en) | 1994-01-11 |
| KR100259066B1 true KR100259066B1 (en) | 2000-06-15 |
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| Application Number | Title | Priority Date | Filing Date |
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| KR1019920010237A Expired - Fee Related KR100259066B1 (en) | 1992-06-12 | 1992-06-12 | Solid state imaging device manufacturing method |
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| KR100693927B1 (en) * | 2005-02-03 | 2007-03-12 | 삼성전자주식회사 | Micro lens manufacturing method, micro lens array manufacturing method and image sensor manufacturing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03190168A (en) * | 1989-12-19 | 1991-08-20 | Matsushita Electron Corp | Manufacture of solid-state image sensing device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03190168A (en) * | 1989-12-19 | 1991-08-20 | Matsushita Electron Corp | Manufacture of solid-state image sensing device |
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