KR940001429A - Solid state imaging device manufacturing method - Google Patents

Solid state imaging device manufacturing method Download PDF

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Publication number
KR940001429A
KR940001429A KR1019920010237A KR920010237A KR940001429A KR 940001429 A KR940001429 A KR 940001429A KR 1019920010237 A KR1019920010237 A KR 1019920010237A KR 920010237 A KR920010237 A KR 920010237A KR 940001429 A KR940001429 A KR 940001429A
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KR
South Korea
Prior art keywords
filter layer
microlens
lens material
color filter
thickness
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Application number
KR1019920010237A
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Korean (ko)
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KR100259066B1 (en
Inventor
이정재
Original Assignee
문정환
금성일렉트론 주식회사
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Priority to KR1019920010237A priority Critical patent/KR100259066B1/en
Publication of KR940001429A publication Critical patent/KR940001429A/en
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Publication of KR100259066B1 publication Critical patent/KR100259066B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

본 발명은 고체 촬상소자에 관한 것으로써, 종래의 고체 촬상소자의 제조방법에 있어서 마이크로렌즈의 두께를 2-3㎛ 정도로 형성함에 따라 마이크로렌즈의 곡률반경이 커져, 촛점거리가 길어지므로 포토다이오드에 촛점이 맺히도록 포토다이오드에서 칼라필터층까지의 두께(t1)가 커지게 됨에 의해서 투과율이 저하되고 원가가 상승되는 문제점을 개선하기 위해 마이크로 렌즈의 곡률반경을 작게 형성한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state image pickup device. In the conventional method for manufacturing a solid-state image pickup device, the microlens has a radius of curvature and a focal length increases as the thickness of the microlens is formed to about 2-3 μm. As the thickness t 1 from the photodiode to the color filter layer becomes large so as to form a focus, the curvature radius of the microlens is made small in order to improve the problem that the transmittance decreases and the cost increases.

즉, 본 발명은 칼라필터층 위에 제 1 렌즈재료를 1㎛ 정도 증착하고 종래에 사용했던 마스크를 이용 노광현상하여 양측면이 역삼각형 모양이되도록 형성하고 다시 그 위에 제 2 렌즈재료를 3㎛ 정도 증착하고 상기와 같은 마스크를 이용하여 패터닝하고 열공정으로 리플로우시켜 마이크로렌즈 두께가 4㎛ 정도되도록 형성한다.That is, in the present invention, the first lens material is deposited on the color filter layer by about 1 μm, and the exposure surface is developed using a mask used in the prior art, so that both sides are formed to have an inverted triangle shape, and the second lens material is deposited on the color filter layer by about 3 μm. Patterned using the mask as described above and reflowed by a thermal process to form a microlens thickness of about 4㎛.

따라서 마이크로렌즈 촛점거리가 짧아지므로 포토다이오드에서 칼라필터층까지의 두께가 작아져 투과율이 향상되고 원가절감의 효과가 있다.Therefore, since the focal length of the microlenses is shortened, the thickness from the photodiode to the color filter layer is reduced, thereby improving the transmittance and reducing the cost.

Description

고체 촬상소자 제조방법Solid state imaging device manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 2 도는 본 발명의 고체 촬상소자 공정 단면도2 is a cross-sectional view of a solid-state imaging device process of the present invention.

Claims (2)

기판에 복수개의 포토다이오드 영역을 형성하고 형성된 마이크로렌즈의 촛점거리를 감안하여 포토다이오드 사이의 VCCD영역 상측부위에 빛의 차광을 위한 실링 금속을 형성하고 평탄화를 위한 평탄층을 형성한 CCD 칩위에 칼라필터층을 형성하는 공정과, 칼라필터층위에 제 1 렌즈재료를 증착하고 렌즈형성용 마스크를 이용 노광량과 현상시간을 조절하여 양측면이 역삼각형이되도록 포토다이오드 상측 부위에 패터닝하는 공정과, 그 위에 제 2 렌즈재료를 증착하고 상기와 같은 마스크를 이용하여 패터닝하는 공정과, 열공정으로 제 1, 제 2 렌즈재료를 리플로우시켜 마이크로 렌즈를 형성하는 공정으로 이루어진 고체 촬상소자 제조방법.Forming a plurality of photodiode regions on the substrate and considering the focal length of the formed microlenses, a color is formed on the CCD chip where a sealing metal for shielding light is formed on the upper portion of the VCCD region between the photodiodes and a flat layer for planarization is formed. Forming a filter layer, depositing a first lens material on the color filter layer, and controlling the exposure amount and developing time using a lens forming mask to pattern the upper side of the photodiode so that both sides are inverted triangles; A method of manufacturing a solid-state imaging device comprising the steps of depositing a lens material and patterning the same using a mask as described above, and forming a microlens by reflowing the first and second lens materials in a thermal process. 제 1 항에 있어서, 제 1 렌즈재료는 1㎛로 증착하고 제 2 렌즈재료는 3㎛로 증착함을 특징으로 하는 고체 촬상소자 제조방법.The method of claim 1, wherein the first lens material is deposited at 1 μm and the second lens material is deposited at 3 μm. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920010237A 1992-06-12 1992-06-12 Method of manufacturing solid stage image pick-up device KR100259066B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019920010237A KR100259066B1 (en) 1992-06-12 1992-06-12 Method of manufacturing solid stage image pick-up device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920010237A KR100259066B1 (en) 1992-06-12 1992-06-12 Method of manufacturing solid stage image pick-up device

Publications (2)

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KR940001429A true KR940001429A (en) 1994-01-11
KR100259066B1 KR100259066B1 (en) 2000-06-15

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100693927B1 (en) * 2005-02-03 2007-03-12 삼성전자주식회사 Method of manufacturing microlens, method of manufacturing microlens array and method of manufacturing image sensor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03190168A (en) * 1989-12-19 1991-08-20 Matsushita Electron Corp Manufacture of solid-state image sensing device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100693927B1 (en) * 2005-02-03 2007-03-12 삼성전자주식회사 Method of manufacturing microlens, method of manufacturing microlens array and method of manufacturing image sensor

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Publication number Publication date
KR100259066B1 (en) 2000-06-15

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