KR100253356B1 - Method for measuring dopant profile with high resolution using scm - Google Patents

Method for measuring dopant profile with high resolution using scm Download PDF

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KR100253356B1
KR100253356B1 KR1019970061759A KR19970061759A KR100253356B1 KR 100253356 B1 KR100253356 B1 KR 100253356B1 KR 1019970061759 A KR1019970061759 A KR 1019970061759A KR 19970061759 A KR19970061759 A KR 19970061759A KR 100253356 B1 KR100253356 B1 KR 100253356B1
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scm
profile
voltage
dopant
specimen
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KR1019970061759A
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KR19990041202A (en
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김영철
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김영환
현대반도체주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
    • G01Q60/24—AFM [Atomic Force Microscopy] or apparatus therefor, e.g. AFM probes
    • G01Q60/38—Probes, their manufacture, or their related instrumentation, e.g. holders

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  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
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Abstract

PURPOSE: A method for measuring a high resolution dopant profile using SCM is provided to measure the dopant profile of a thin junction by removing the side of the profile test piece to be measured so as to reduce the angle. CONSTITUTION: Applying a DC voltage and an AC voltage to the probe of an SCM, the dopant within a profile test piece(20) removed by an angle is charged in the oxide film in the surface or depleted in the profile test piece(20). A sensor(12) detects the capacitance measured under the condition for charging holes, and the amplifying unit(13) amplifies the detected capacitance to a predetermined level. The profile test piece(20) removed by an angle increases the resolution for the depth direction of side generated by contacting the surface of the profile test piece(20) with the tip of the probe of the SCM.

Description

에스씨엠을 이용한 고분해능 도우펀트 프로파일 측정방법Method for measuring high resolution dopant profile using SCM

본 발명은 에스씨엠을 이용한 고분해능 도우펀트 프로파일 측정방법에 관한 것으로, 특히 단면시편을 소정각으로 제거하여 도우펀트 프로파일을 측정함으로써 분해능을 향상시킬 수 있도록 한 에스씨엠을 이용한 고분해능 도우펀트 프로파일 측정방법에 관한 것이다.The present invention relates to a high resolution dopant profile measuring method using SCM, and particularly to a high resolution dopant profile measuring method using SCM to improve the resolution by measuring the dopant profile by removing the cross section specimen at a predetermined angle. It is about.

일반적으로 에스씨엠(SCM)은 에이에프엠(AFM)장치에 시편과 프로팁사이의 커패시턴스를 측정하는 기능을 부가한 장치로서 실리콘내에 도핑되어 있는 캐리어의 양을 측정하는 데 주로 사용되는데, 커패시턴스는 캐리어의 농도에 대한 변환될수 있으며 시편과 프로브 팁사이의 커패시턴스의 변화는 센서의 공진주파수변화로 나타난다.In general, SCM is a device that adds the ability to measure the capacitance between the specimen and the protip in the AFM device and is mainly used to measure the amount of carriers doped in silicon. The change in capacitance between the specimen and the probe tip results in a change in the resonant frequency of the sensor.

도1은 에스씨엠(SCM)을 이용하여 종래 직사각형으로 이루어진 단면시편의 도우펀트(Dopant) 프로파일(Profile)을 측정하는 모습을 보인 개략도로서, 이에 도시된 바와같이 탐지침에 직류전압과 교류전압을 가하여 시편(10)내부에서 발생하는 커패시턴스의 값을 감지하는 센서(12)와; 상기 센서(12)의 감지신호를 소정레벨로 증폭하는 증폭부(13)와; 상기 탐지침의 뒷면에 조사되어 반사되는 빛을 검출하는 검출부(14)로 구성되며, 이와같이 구성된 종래 에스씨엠(SCM)을 이용한 고분해능 도우펀트(Dopant) 프로파일(Profile) 측정방법의 동작을 설명하면 다음과 같다.Figure 1 is a schematic diagram showing the measurement of the dopant profile (profile) of the cross-section specimen made of a conventional rectangular using the SCM, as shown in the DC voltage and AC voltage to the probe A sensor 12 for sensing a value of capacitance generated inside the specimen 10; An amplifier 13 for amplifying the detection signal of the sensor 12 to a predetermined level; The detection unit 14 is configured to detect the light reflected from the back of the detection needle, and the operation of the high-resolution dopant profile measuring method using the conventional SCM configured as described above will be described below. Same as

먼저, 에스씨엠(SCM)의 탐지침에 직류전압과 교류전압을 가하여 주면 시편(10) 내부에 존재하는 도우펀트(Dopant)가 표면에 존재하는 산화막쪽으로 축적되거나 단면시편(10) 내부로 공핍된다.First, when a DC voltage and an alternating voltage are applied to the detection needle of SCM, a dopant existing inside the specimen 10 is accumulated toward the oxide film existing on the surface or depleted into the cross section specimen 10. .

이때, 상기 도우펀트(Dopant)의 축적과 공핍은 도우펀트(Dopant)의 형태와 가해주는 직류전압의 극성에 따라 달라지는데, 예를 들어 도우펀트(Dopant)가 피형이면 양의 직류전압을 가하였을때 시편(10) 내부의 다수캐리어인 홀들이 단면시편(10) 내부쪽으로 밀려나 공핍층이 생기고 음의 직류전압을 가하였을때는 홀들이 표면쪽으로 몰려 축적된다.At this time, the accumulation and depletion of the dopant depends on the shape of the dopant and the polarity of the DC voltage applied to it. Holes, which are multiple carriers in the specimen 10, are pushed into the cross-section specimen 10 to form a depletion layer, and when the negative DC voltage is applied, the holes are accumulated toward the surface.

여기서, 상기 홀들이 축적되는 조건에서 측정된 커패시턴스의 값을 센서(12)를 통해 감지하여 이를 증폭부(13)에서 소정레벨 증폭하여 구한다.Here, the capacitance value measured under the condition in which the holes are accumulated is sensed through the sensor 12 and amplified by the amplifier 13 to obtain a predetermined level.

즉, 공핍층이 생기는 직류전압 조건에서 낮은 교류전압에 따라 공핍되는 단면시편(10)의 두께가 달라져서 커패시턴스의 값이 변화게 되는데, 이 커패시턴스의 변화값을 가지고 도우펀트(Dopant) 프로파일(Profile)을 측정한다.That is, in the DC voltage condition in which the depletion layer is formed, the thickness of the cross-section specimen 10 depleted according to the low AC voltage is changed so that the capacitance value is changed, and the dopant profile is changed with the change of the capacitance. Measure

그러나, 상기와 같은 직사각형으로 이루어진 단면시편의 도우펀트 프로파일 측정시에 단면시편의 정션깊이가 점점 작아짐에 따라 에스엠장치의 분해능으로는 불순물측면을 측정할 수 없는 문제점이 있었다.However, as the depth of junction of the cross-section specimen gradually decreases when measuring the dopant profile of the rectangular cross-section specimen, the impurity side cannot be measured by the resolution of the SM device.

따라서, 상기와 같은 문제점을 감안하여 창안한 본 발명은 두께가 얇은 정션의 도우펀트 프로파일을 측정할 수 있도록 한 에스씨엠을 이용한 고분해능 도우펀트 프로파일 측정방법을 제공함에 그 목적이 있다.Accordingly, an object of the present invention is to provide a method for measuring a high resolution dopant profile using SCM which enables to measure a dopant profile of a thin junction.

도1은 에스씨엠을 이용하여 종래 직사각형으로 이루어진 단면시편의 도우펀트 프로파일을 측정하는 모습을 보인 개략도.1 is a schematic view showing a state of measuring the dopant profile of the cross-sectional specimen made of a conventional rectangular using the SMC.

도2는 에스씨엠을 이용하여 본 발명 소정각으로 제거된 단면시편의 고분해능 도우펀트 프로파일을 측정하는 모습을 보인 개략도.Figure 2 is a schematic diagram showing a high resolution dopant profile of the cross-sectional specimens removed at a predetermined angle of the present invention using the SM.

도3은 도2에 있어서, 깊이방향의 분해능을 보인 단면도.3 is a cross-sectional view showing the resolution in the depth direction in FIG.

*도면의 주요부분에 대한 부호의 설명** Description of the symbols for the main parts of the drawings *

12:센서 13:증폭부12: sensor 13: amplifier

14:검출부 15:스캐너14: Detection part 15: Scanner

20:소정각으로 제거된 시편20: Specimens removed at prescribed angles

상기와 같은 목적은 측정하고자 하는 단면시편의 측면을 소정각으로 제거하여 각도를 줄임으로써 달성되는 것으로, 이와같은 본 발명을 설명한다.The above object is achieved by reducing the angle by removing the side surface of the cross-section specimen to be measured at a predetermined angle, which describes the present invention.

도2는 에스씨엠(SCM)을 이용하여 본 발명 소정각으로 제거된 단면시편의 고분해능 도우펀트(Dopant) 프로파일(Profile)을 측정하는 모습을 보인 개략도로서, 이에 도시한 바와같이 에스씨엠(SCM)의 구성은 종래와 동일하나 측정하고자 하는 단면시편의 측면을 소정각으로 제거하여 각도를 줄인 시편(20)을 사용하는 것이 다르며, 이와같이 소정각으로 제거된 단면시편(20)을 이용하여 도우펀트(Dopant) 프로파일(Profile)을 측정하는 방법을 설명하면 다음과 같다.Figure 2 is a schematic diagram showing the measurement of the high-resolution dopant profile (profile) of the cross-section specimens removed at a predetermined angle of the present invention using the SCM (SCM), as shown here The configuration is the same as in the prior art, but different from the use of the specimen 20 to reduce the angle by removing the side of the specimen to be measured at a predetermined angle, the dopant (using a cross-section specimen 20 removed at a predetermined angle as described above) Dopant) The following describes how to measure a profile.

먼저, 일반적인 동작은 종래와 동일하다. 즉, 에스씨엠(SCM)의 탐지침에 직류전압과 교류전압을 가하여 주면 소정각으로 제거된 단면시편(20) 내부에 존재하는 도우펀트(Dopant)가 표면에 존재하는 산화막쪽으로 축적되거나 소정각으로 제거된 단면시편(20) 내부로 공핍된다.First, the general operation is the same as in the prior art. That is, when a DC voltage and an AC voltage are applied to the detection needle of SCM, a dopant existing in the cross-section specimen 20 removed at a predetermined angle accumulates toward an oxide film present on the surface or at a predetermined angle. Depletion into the removed cross-section specimen 20.

이때, 상기 도우펀트(Dopant)의 축적과 공핍은 도우펀트(Dopant)의 형태와 가해주는 직류전압의 극성에 따라 달라지는데, 예를 들어 도우펀트(Dopant)가 피형이면 양의 직류전압을 가하였을때 소정각으로 제거된 단면시편(20) 내부의 다수캐리어인 홀들이 시편(20) 내부쪽으로 밀려나 공핍층이 생기고 음의 직류전압을 가하였을때는 홀들이 표면쪽으로 몰려 축적된다.At this time, the accumulation and depletion of the dopant depends on the shape of the dopant and the polarity of the DC voltage applied to it. Holes that are multiple carriers in the cross-section specimen 20 removed at a predetermined angle are pushed into the specimen 20 to form a depletion layer, and when the negative DC voltage is applied, the holes are accumulated toward the surface.

여기서, 상기 홀들이 축적되는 조건에서 측정된 커패시턴스의 값을 센서(12)를 통해 감지하여 이를 증폭부(13)에서 소정레벨 증폭하여 구한다.Here, the capacitance value measured under the condition in which the holes are accumulated is sensed through the sensor 12 and amplified by the amplifier 13 to obtain a predetermined level.

즉, 공핍층이 생기는 직류전압 조건에서 낮은 교류전압에 따라 공핍되는 소정각으로 제거된 단면시편(20)의 두께가 달라져서 커패시턴스의 값이 변화게 되는데, 이 커패시턴스의 변화값을 가지고 도우펀트(Dopant) 프로파일(Profile)을 측정한다.That is, in the DC voltage condition in which the depletion layer is formed, the thickness of the cross-sectional specimen 20 removed at a predetermined angle depleted according to the low AC voltage is changed, and thus the capacitance value is changed. ) Measure the profile.

이때, 도3과 같이 소정각으로 제거된 단면시편(20)은 에스씨엠(SCM)의 탐지침의 팁이 시편(20)표면에 접촉하여 생기는 측면의 깊이 방향에 대해 분해능을 향상시키는데, 즉 에스씨엠(SCM)을 이용하여 상기 소정각으로 제거된 단면시편(20)의 도우펀트(Dopant) 프로파일(Profile)을 측정하면 깊이 방향에서의 분해능을 200배 이상 증가시킬 수 있다.At this time, the cross-sectional specimen 20 removed at a predetermined angle as shown in Figure 3 improves the resolution in the depth direction of the side surface generated by the tip of the detection needle of the SCM (SCM) in contact with the surface of the specimen 20, that is, S By measuring the dopant profile of the cross-section specimen 20 removed at the predetermined angle using the SCM, the resolution in the depth direction may be increased by 200 times or more.

이상에서 상세히 설명한 바와같이 본 발명은 두께가 얇은 정션의 도우펀트 프로파일을 측정할 수 있는 효과가 있다.As described in detail above, the present invention has the effect of measuring the dopant profile of the thinner junction.

Claims (1)

탐지침에 직류전압과 교류전압을 가하여 시편내부에서 발생하는 커패시턴스의 값을 감지하는 센서와; 상기 센서의 감지신호를 소정레벨로 증폭하는 증폭부와; 상기 탐지침의 뒷면에 조사되어 반사되는 빛을 검출하는 검출부로 구성된 에스씨엠에 있어서, 단면시편을 소정각으로 제거하여 도우펀트 프로파일을 측정하는 것을 특징으로 하는 에스씨엠을 이용한 고분해능 도우펀트 프로파일 측정방법.A sensor for sensing the value of capacitance generated inside the specimen by applying a DC voltage and an AC voltage to the detector needle; An amplifier for amplifying the detection signal of the sensor to a predetermined level; A method of measuring a high resolution dopant profile using an SMC comprising measuring a dopant profile by removing a cross-sectional specimen at a predetermined angle in the SCM configured to detect light reflected and irradiated onto the back side of the detector needle. .
KR1019970061759A 1997-11-21 1997-11-21 Method for measuring dopant profile with high resolution using scm KR100253356B1 (en)

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