KR100250954B1 - Deposition method of tasinx diffusion barrier and its application for multilevel interconnect contact of semiconductor device - Google Patents
Deposition method of tasinx diffusion barrier and its application for multilevel interconnect contact of semiconductor device Download PDFInfo
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- KR100250954B1 KR100250954B1 KR1019970057884A KR19970057884A KR100250954B1 KR 100250954 B1 KR100250954 B1 KR 100250954B1 KR 1019970057884 A KR1019970057884 A KR 1019970057884A KR 19970057884 A KR19970057884 A KR 19970057884A KR 100250954 B1 KR100250954 B1 KR 100250954B1
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- tantalum
- diffusion barrier
- tantalum silicide
- nitrogen
- metal
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- 238000009792 diffusion process Methods 0.000 title claims abstract description 91
- 230000004888 barrier function Effects 0.000 title claims abstract description 65
- 239000004065 semiconductor Substances 0.000 title claims description 24
- 238000000151 deposition Methods 0.000 title claims 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 91
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 47
- 238000000034 method Methods 0.000 claims abstract description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000010703 silicon Substances 0.000 claims abstract description 22
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 21
- 239000010410 layer Substances 0.000 claims abstract description 17
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000011229 interlayer Substances 0.000 claims abstract description 10
- VGQSEFBWEDYXLE-UHFFFAOYSA-N [Si].[Si].[Si].[Ta].[Ta].[Ta].[Ta].[Ta] Chemical compound [Si].[Si].[Si].[Ta].[Ta].[Ta].[Ta].[Ta] VGQSEFBWEDYXLE-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052786 argon Inorganic materials 0.000 claims abstract description 6
- 239000007789 gas Substances 0.000 claims abstract 6
- 229910001873 dinitrogen Inorganic materials 0.000 claims abstract 5
- 238000004544 sputter deposition Methods 0.000 claims abstract 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims abstract 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims abstract 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 69
- 229910052751 metal Inorganic materials 0.000 claims description 66
- 239000002184 metal Substances 0.000 claims description 66
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 57
- 239000010408 film Substances 0.000 claims description 47
- 239000010949 copper Substances 0.000 claims description 30
- 229910021332 silicide Inorganic materials 0.000 claims description 28
- 229910052802 copper Inorganic materials 0.000 claims description 26
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 25
- -1 tantalum silicide nitride Chemical class 0.000 claims description 17
- 230000008569 process Effects 0.000 claims description 16
- 239000010409 thin film Substances 0.000 claims description 16
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 12
- 229910004200 TaSiN Inorganic materials 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 230000001681 protective effect Effects 0.000 claims description 9
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 239000010937 tungsten Substances 0.000 claims description 6
- 230000002265 prevention Effects 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 3
- 238000000926 separation method Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims 7
- 239000000758 substrate Substances 0.000 claims 7
- 238000005304 joining Methods 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 abstract description 19
- 238000001465 metallisation Methods 0.000 abstract description 10
- 229910004201 TaSiNx Inorganic materials 0.000 abstract 5
- 229910002601 GaN Inorganic materials 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- HWEYZGSCHQNNEH-UHFFFAOYSA-N silicon tantalum Chemical compound [Si].[Ta] HWEYZGSCHQNNEH-UHFFFAOYSA-N 0.000 abstract 1
- 230000007547 defect Effects 0.000 description 11
- 230000008859 change Effects 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 125000004433 nitrogen atom Chemical group N* 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 229910002056 binary alloy Inorganic materials 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000010365 information processing Effects 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910001362 Ta alloys Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- JUZTWRXHHZRLED-UHFFFAOYSA-N [Si].[Cu].[Cu].[Cu].[Cu].[Cu] Chemical compound [Si].[Cu].[Cu].[Cu].[Cu].[Cu] JUZTWRXHHZRLED-UHFFFAOYSA-N 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000005280 amorphization Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910021360 copper silicide Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005261 decarburization Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910001325 element alloy Inorganic materials 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 210000000056 organ Anatomy 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
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- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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Abstract
Description
본 발명은, 256M급 이상의 초고집적 실리콘 기억 소자 및 비기억 소자 (이하 "소자"라 함)의 소스와 드레인 접촉접합 기술 및 다층 금속 배선 기술에 관한 것으로, 특히, 상기 접촉 접합기술 및 다층 금속 배선 기술에 사용될 수 있는 확산 방지막에 관한 것이다.BACKGROUND OF THE
실리콘 및 화합물 반도체 소자 제조시, 반도체/금속 및 금속/금속 사이에 반도체 및 금속의 상호 확산을 막을 수 있는 확산 방지막을 삽입하여 다층 구조의 금속 배선을 형성함으로써 소자의 정보 처리 속도, 전류 밀도 및 신뢰성을 현격히 향상시킬 수 있다.In the manufacture of silicon and compound semiconductor devices, a multi-layered metal wiring is formed by inserting a diffusion barrier to prevent mutual diffusion of semiconductors and metals between semiconductors / metals and metals / metals, thereby forming information processing speed, current density and reliability of the device. Can significantly improve.
종래에는 다층 구조 금속 배선에 사용되는 확산 방지막으로서, 티탄(Ti), 텅스텐(W) 및 탄탈륨(Ta)과 같은 내화성 금속에 질소 등을 첨가한 티탄 질화막(TiN), 텅스텐 질화막(WN) 및 탄탈질화막(TaN)과 같은 이원소계 합금이 제안되어져 왔다.Conventionally, as a diffusion barrier film for multilayer structure metal wiring, a titanium nitride film (TiN), tungsten nitride film (WN) and tantalum in which nitrogen is added to a refractory metal such as titanium (Ti), tungsten (W) and tantalum (Ta) Binary alloys such as nitride films (TaN) have been proposed.
그러나, 상기 이원소계 합금 확산 방지막에서는, 주배선 금속(구리, 텅스텐, 알루미늄, 은 등)이 상기 이원소계 합금 확산 방지막위에 증착된 후, 기억 소자 및 비기억 소자의 후속 제조 공정(end-line process)에 따라 550∼700℃에서 후속 열처리가 행하여지면, 티탄 질화막과 같은 상기 이원소계 합금 확산 방지막은 열적 안정성이 열화되어 결정립 사이로 원소의 확산이 일어나서 확산 방지 기능이 상실된다. 이에 따라, 높은 밀도의 결정 결함이 MOSFET(금속 산화막 반도체 전계효과 트랜지스터) 소자의 소스 및 드레인 접촉 접합(contact junction) 부위에서 발생하여 반도체 소자의 전기적 특성이 열화되는 것을 막을 수 없게 된다.However, in the binary alloy diffusion barrier, a main wiring metal (copper, tungsten, aluminum, silver, etc.) is deposited on the binary alloy diffusion barrier, followed by an end-line process of manufacturing a memory element and a non-memory element. When subsequent heat treatment is performed at 550 to 700 ° C., the binary alloy diffusion barrier film, such as a titanium nitride film, is deteriorated in thermal stability, causing diffusion of elements between crystal grains and loss of diffusion prevention function. As a result, high density crystal defects cannot be prevented from occurring in the source and drain contact junctions of the MOSFET (metal oxide semiconductor field effect transistor) device and deteriorating the electrical characteristics of the semiconductor device.
본 발명은, 상술한 온도 범위 이상의 고온에서 후속 열처리 하여도 반도체 및 주배선 금속의 확산을 방지할 수 있고, 그에 따라 전기적 특성의 열화 및 결함이 전혀 발생하지 않는 확산 방지막을 제공하는 것을 목적으로 한다.It is an object of the present invention to provide a diffusion barrier that can prevent diffusion of semiconductors and main wiring metals even after subsequent heat treatment at a high temperature of the above-described temperature range, and thereby prevents deterioration of electrical properties and defects. .
본 발명의 또 다른 목적은, 상기 삼원소계 확산방지막을 소자의 소스와 드레인의 접합배선(contact metallization)공정 및 다층 금속배선 공정에 이용하므로써, 고온 열처리 후에도 반도체 및 금속의 확산이 방지되고, 우수한 전기적 특성을 가지는 접합배선 및 다층금속배선을 제공하는 것이다.Another object of the present invention is to use the three-element diffusion barrier layer in the contact metallization process of the source and drain of the device and the multilayer metallization process, thereby preventing the diffusion of the semiconductor and metal even after high temperature heat treatment, and excellent electrical It is to provide a junction wiring and a multilayer metal wiring having characteristics.
도 1a은 본 발명에 의한 삼원소계 탄탈실리나이트라이드 (TaSiNx) 확산 방지막 제조 방법에 따른 박막내의 질소함유량의 변화를 나타낸 그래프이며, 도 1b는 질소 농도에 따른 탄탈실리나이트라이드 (TaSiNx) 확산 방지막의 비저항값의 변화를 도시한다.Figure 1a is a graph showing the change in nitrogen content in the thin film according to the method for producing a three-element tantalum silicide nitride (TaSiN x ) diffusion barrier according to the present invention, Figure 1b is tantalum silicide nitride (TaSiN x ) diffusion according to the nitrogen concentration The change in the specific resistance value of the protective film is shown.
도 2는 본 발명에 의한 확산방지막을 이용한, 기억소자 및 비기억 소자의 소스 및 드레인접촉공정의 개요도이다.2 is a schematic diagram of a source and drain contact process of a memory element and a non-memory element using the diffusion barrier according to the present invention.
도 3은 본 발명에 의한 확산 방지막을 이용한, 기억소자 및 비기억 소자의 소자간 상호연결을 위한 다층 금속 배선공정의 개요도이다.3 is a schematic diagram of a multi-layer metallization process for the interconnection of elements of a memory device and a non-memory device using the diffusion barrier according to the present invention.
도 4은 열처리 온도에 따른 실리콘/탄탈실리나이트라이드/구리 (Si/TaSiNx/Cu) 구조의 다층 금속 배선의 면저항값의 변화를 타나낸 그래프이다.4 is a graph showing a change in sheet resistance of a multilayer metal wiring having a silicon / tantallin nitride / copper (Si / TaSiN × / Cu) structure according to a heat treatment temperature.
도 5는 본 발명에 의한 실리콘/탄탈실리나이트라이드/구리 (Si/TaSiNx/Cu) 구조의 다층 금속 배선에서 탄탈실리나이트라이드박막내의 질소농도 차이에 따른 결함발생을, 탄탈실리나이트라이드를 사용하지 않는 실리콘/구리 구조의 다층 금속 배선과 비교하여 도시하는 노말스키(Nomarski) 현미경 사진이다.FIG. 5 shows the occurrence of defects according to the nitrogen concentration difference in the tantalum silicide nitride film in the silicon / tantal silicide nitride / copper (Si / TaSiN x / Cu) structure of the multilayer metal interconnection according to the present invention, using tantalum silicide It is a Normalski micrograph shown compared with the multilayer metal wiring of a silicon / copper structure which does not.
**도면의 주요부분에대한 부호의설명**** Description of the symbols for the main parts of the drawings **
1 : 분리산화막 2 : 소스1: separation oxide 2: source
3 : 드레인 4 : 게이트산화막3: drain 4: gate oxide film
5 : 게이트금속 6 : 게이트금속 보호막5: gate metal 6: gate metal protective film
7 : 탄탈륨실리나이트사이드 확산방지막7: tantalum silicide side diffusion prevention film
8 : 주배선 금속 9 : 층간절연박막8
따라서, 본 발명에서는 탄탈륨에 실리콘 및 질소를 첨가하여 삼원소계 합금을 제조하였다. 제조된 탄탈실리나이트라이드 (TaSiNx) 확산 방지막 (이하 "탄탈 확산 방지막")을 반도체와의 접촉 접합(contact junction) 공정 및 다층 금속 배선(multi-level interconnection)을 위한 다층 구조로 사용하였다. 본 발명의 탄탈 확산 방지막은 850℃ 이상의 고온에서 후속 열처리하여도 반도체 및 구리 금속의 확산을 방지하였으며, 전기적 특성의 열화 및 결함이 전혀 발생하지 않는 특징이 있다.Therefore, in the present invention, silicon and nitrogen were added to tantalum to prepare a three-element alloy. The prepared tantalum silicide (TaSiN x ) diffusion barrier (hereinafter referred to as "tantalum diffusion barrier") was used as a multilayer structure for a contact junction process and a multi-level interconnection with a semiconductor. The tantalum diffusion barrier of the present invention prevents diffusion of semiconductors and copper metals even after subsequent heat treatment at a high temperature of 850 ° C. or higher, and does not cause any deterioration of electrical characteristics and defects.
도 1은 본 발명에서 제조된 탄탈 확산 방지막의 제조 방법에 따른 박막내의 질소 함유량의 변화 및 비저항값의 변화를 나타낸 도면이다.1 is a view showing the change in the nitrogen content and the change in the specific resistance value of the thin film according to the manufacturing method of the tantalum diffusion barrier film prepared in the present invention.
순도 99.99%의 탄탈륨실리사이드 (Ta5Si3) 타켓을 사용하여 스파터링 (RF 및 DC) 방법으로, 질소 및 알곤의 전체 유량에 대한 질소 유량비 (N2/(N2+Ar))를 0에서 20%까지 변화시키면서 탄탈 확산 방지막을 증착하였다. 도 1a에서와 같이, 질소 유량비(N2/(N2+Ar))가 0에서 6%가 될 때까지 탄탈 확산 방지막내의 질소 농도가 급격히 증가하였으며, 질소 유량비가 6% 이상이 되면 탄탈 확산 방지막내의 질소 농도의 증가는 둔화되어 질소 농도는 43 원자농도% (이하 "at.%"라 한다)로 포화 상태를 나타내고 있다. 이러한 현상은, 탄탈 확산 방지막 내부의 질소 농도가 28 at.% 이하인 경우 탄탈륨실리사이드가 질소와 반응하여 탄탈실리나이트라이드라는 질화물을 형성하기에는 아직 질소 농도가 충분하지 못하므로 후속 열처리하는 동안 탄탈륨 실리사이드가 결정화되는 특성을 보이기 때문이다. 그러나 TaSiNx박막내의 질소 농도가 40 at.% 이상인 경우는 탄탈륨과 실리콘의 합금 상태도를 고려해 볼 때 탄탈 확산 방지막내의 질소 농도가 탄탄실리나이트라이드라는 질화물을 형성하기에 충분한 고용도를 가진다. 따라서 탄탈 확산 방지막내의 질소 농도가 40 at.% 이하인 경우 다결정 구조의 결정 구조를 가지는데 반하여 질소 농도가 40 at.% 이상으로 증가하면 안정된 비정질 상을 나타냄을 보여주었다. 탄탈 확산 방지막내에 존재하는 40 at.%이상의 잉여의 질소 원자들은 탄탈실리나이트라이드의 결정 구조를 미세화하면서 결정립계에 응집(segregation)하여 반도체 및 다른 금속 원자 (특히 구리 원자)의 확산을 방지하는 효과의 현격한 향상을 가져올 뿐만 아니라 탄탈실리나이트라이드 자체의 결정립이 성장하려는 구동력을 감소시킴으로써, 미세 구조를 후속 열처리 공정에서도 지속적으로 유지함으로써 반도체와의 접촉공정이나 다층 구조의 금속 배선에 사용할 경우 확산 방지막으로써 기능을 안정되게 얻을 수 있었다.Using a tantalum silicide (Ta 5 Si 3 ) target with a purity of 99.99%, the ratio of nitrogen flow rate (N 2 / (N 2 + Ar)) to the total flow rate of nitrogen and argon was determined from zero by the spattering (RF and DC) method. The tantalum diffusion barrier was deposited while changing to 20%. As shown in FIG. 1A, the nitrogen concentration in the tantalum diffusion barrier rapidly increased until the nitrogen flow ratio N 2 / (N 2 + Ar) became 0 to 6%, and when the nitrogen flow ratio was 6% or more, tantalum diffusion The increase in the nitrogen concentration in the protective film is slowed down, and the nitrogen concentration is shown to be saturated at 43 atomic concentration% (hereinafter referred to as "at.%"). This phenomenon is due to the fact that the tantalum silicide crystallizes during the subsequent heat treatment since the tantalum silicide does not yet have sufficient nitrogen concentration to react with nitrogen to form a nitride called tantalum silicide when the nitrogen concentration in the tantalum diffusion barrier is 28 at% or less. It is because it shows the characteristic. However, when the nitrogen concentration in the TaSiN x thin film is 40 at.% Or more, considering the state diagram of the alloy of tantalum and silicon, the nitrogen concentration in the tantalum diffusion barrier has a sufficient solid solubility to form a nitride called tantansilitide. Therefore, when the concentration of nitrogen in the tantalum diffusion barrier is less than 40 at.%, It has a crystal structure of polycrystalline structure. However, when the concentration of nitrogen increases to more than 40 at.%, It shows a stable amorphous phase. The excess of at least 40 at.% Of nitrogen atoms present in the tantalum diffusion barrier prevents the diffusion of semiconductors and other metal atoms (especially copper atoms) by agglomeration at grain boundaries while miniaturizing the crystal structure of tantalum nitride. In addition to the remarkable improvement, the tantalum silitide itself reduces the driving force to grow, and the microstructure is continuously maintained in the subsequent heat treatment process so that it can be used in contact with semiconductors or multi-layer metal wiring. It was possible to obtain a stable function.
도 1b는 질소 원자 농도에 따른 확산방지막의 비저항 변화를 나타낸 것이다. 질소 원자 농도가 0일 때, 비저항은 160μΩ-cm이며, 질소 원자 농도가 20%일 때 200μΩ-cm이며, 40%로 증가하면 비저항은 1.2KμΩ-cm까지 증가한다. 일반적으로 확산 방지막으로 사용되는 금속은 200μΩ-cm 내외의 낮은 비저항을 가져야 한다. 그 이유는 접촉 접합용 배선으로 사용될 경우 비저항이 높은 경우 접촉 저항의 증가로 인해 정보 처리 속도가 낮아지기 때문이다. 현재 가장 널리 사용되고 있는 티탄 질화막(TiN)의 경우 비저항은 약 200μΩ-cm이지만, 600℃ 이상의 온도에서 후속 열처리시 하부층의 실리콘과 반응하여 비저항이 500μΩ-cm 이상 증가한다. 그러나, 본 발명에서 제조된 탄탈 확산 방지막은 질소 농도 28% 이상만 되어도 700℃ 이상의 온도에서 열처리하여도 비저항은 500μΩ-cm 이하로 유지하면서, 동시에 구리 금속의 확산을 막을 수 있다. 특히 다층 금속 배선에 필요한 확산 방지막으로 사용할 경우에는 확산 방지막의 비저항 보다 금속과의 반응을 막을 수 있는 고온 열적 안정성이 보다 중요한 요소가 된다.Figure 1b shows the resistivity change of the diffusion barrier according to the nitrogen atom concentration. When the nitrogen atom concentration is 0, the specific resistance is 160 mu Ω-cm, when the nitrogen atom concentration is 20%, 200 mu Ω-cm, and when it increases to 40%, the specific resistance increases to 1.2 K mu Ω-cm. In general, the metal used as the diffusion barrier should have a low resistivity of about 200μΩ-cm. The reason for this is that, when used as a contact bonding wiring, when the specific resistance is high, the information processing speed decreases due to an increase in the contact resistance. In the case of the most widely used titanium nitride film (TiN), the specific resistance is about 200 µΩ-cm, but the specific resistance increases more than 500 µΩ-cm by reaction with the silicon of the lower layer at a subsequent heat treatment at a temperature of 600 ° C. or higher. However, the tantalum diffusion barrier film prepared in the present invention can prevent the diffusion of copper metal while maintaining a specific resistance of 500 mu Ω-cm or less even when heat treatment is performed at a temperature of 700 ° C. or higher even if the nitrogen concentration is 28% or more. In particular, when used as a diffusion barrier film for multilayer metal wiring, a high temperature thermal stability that prevents the reaction with metal becomes more important than the specific resistance of the diffusion barrier film.
도 2는 탄탈 확산 방지막을 기억 소자 혹은 비기억 소자의 접합 배선 (contact metallization)으로 사용한 실용예이다.2 is a practical example in which a tantalum diffusion barrier is used as contact metallization of a memory element or a non-memory element.
도 2a는 분리 산화막(1)을 형성한 후 소스(2) 및 드레인(3)의 접촉창을 식각해낸 후 보론 혹은 인 등의 불순물을 주입하여 소스 및 드레인을 형성한다. 이 때 열산화막이 소스 및 드레인 접촉창을 덮게 된다. 도 2b는 게이트 부분을 다시 식각하여 도 2c에서 게이트 산화막(4)을 형성한다. 게이트 금속(5)을 증착/식각한 후 게이트 금속 보호막(6)을 도포한다. 도 2d에서 도면과 같이 소스 및 드레인의 접촉창이 될 부분을 다시 식각하여 도 2e에서 탄탈 확산 방지막(7)을 도포한 후 구리, 알루미늄, 은 혹은 텅스텐 금속 중 하나를 주금속배선(8)으로 도포함으로써 기억 혹은 비기억 소자의 후제조 공정이 끝나게 된다. 탄탈 확산 방지막을 소스 및 드레인의 접합 배선으로 사용함으로써 소스 및 드레인의 0.1 마이크론 이하의 매우 얇은 접합(shallow junction)이 후속 열처리에 의해 파괴되는 현상을 방지할 수 있다.In FIG. 2A, after forming the
도 3은 본 발명의 탄탈 확산 방지막을 다층 금속 배선 공정에 이용한 실용예로서, 도 2에서의 도 2d 공정 이후의 공정을 보여주고 있다.FIG. 3 is a practical example in which the tantalum diffusion barrier of the present invention is used in a multi-layer metal wiring process, and shows a process after the process of FIG. 2D in FIG. 2.
도 3a에서 탄탈 확산 방지막(7)을 소스(2) 및 드레인(3)의 접촉 배선한다. 도 3b에서는, 소스(2)쪽은 주금속 배선(8)을 한 후 실리카 글래스(9)(silica glass) 등과 같은 층간 절연 박막 (interlevel dielectric material)을 전면에 도포한다. 도 3c는 드레인(3)쪽은 층간 절연막(9)을 다시 식각한다. 도 3d는 탈탄 확산 방지막(7)을 전면에 도포하고 그 위에 주금속 배선(8)을 도포하고 그 위에 다시 보호막(9)을 형성시킨다. 4G급 이상의 기억소자 및 비기억소자에서는 층간절연막/탄탈확산방지막/주금속배선 도포공정이 4층 이상 되풀이됨으로써 모든 금속 배선 공정이 끝나게 되고 그 이후에 보호막(9)을 형성시킨다.In FIG. 3A, the
도 3에 의한 다층 금속배선 공정에 의하여, 기억 소자 및 비기억 소자의 후제조 공정중, 여러 층의 금속을 다층으로 배선할 경우에 층간 절연막 제조 및 평탄화 공정에 필요한 후속 열처리에 의해 발생하게 되는 주금속 배선 및 층간 절연막과의 반응을 방지함으로써 다층 금속 배선 공정의 신뢰성을 향상시키고, 금속 배선에 따른 결함 발생 및 전기적 특성 열화를 방지할 수 있게 되었다.In the post-manufacturing process of the memory and non-memory devices, the multilayer metallization process shown in FIG. By preventing the reaction with the metal wiring and the interlayer insulating film, it is possible to improve the reliability of the multi-layer metal wiring process and to prevent the occurrence of defects and the deterioration of electrical characteristics due to the metal wiring.
도 4는 도 2 및 3과 같은 다층 금속 배선의 후속 열처리에 따른 면저항 변화를 측정한 것이다. 600∼900℃의 후속열처리 온도범위안에서 탄탈 확산 방지막내의 질소 농도가 28 at. % 이하의 경우에는, 700℃ 이상으로 열처리 온도가 증가하면 열처리 온도가 증가함에 따라 박막의 면저항값은 급격한 증가를 보이는데 이는 탄탈 확산 방지막이 구리의 확산을 막지 못하고 실리콘기관과 반응하여 구리실리사이드 (Cu-silicide)를 형성하였기 때문이다. 또 이로 인하여 다층 구조 금속 배선에서 주배선재료인 구리박막과 탄탈 확산 방지막이 서로 반응하여 전기저항이 증가했기 때문이다. 이와 같은 반응은 실제 소자제조시 소자의 얕은 접합 (shallow junction)을 파괴하는 치명적인 결함을 가져오는 원인이 된다. 그러나 도 3에서 탄탈 확산 방지막내의 질소 농도가 40 at. % 이상인 경우는 열처리온도가 증가함에 따라 면저항값이 커다란 변화 없이 초기 증착시의 구리박막의 면저항값을 유지하고 있느데 이는 탄탈 확산 방지막이 효과적으로 구리의 확산을 막아 구리박막의 전기적, 물리적 특성열화를 방지했음을 보여주고 있다. 따라서 탄탈 확산 방지막내의 질소 농도가 40 at. % 이상일 때 900℃ 까지 다층 금속 배선의 열적. 전기적 특성을 유지할 수 있다.4 is a measurement of the sheet resistance change according to the subsequent heat treatment of the multi-layer metal wiring as shown in FIGS. In the subsequent heat treatment temperature range of 600 to 900 ° C, the nitrogen concentration in the tantalum diffusion barrier was 28 at. In the case of less than%, when the heat treatment temperature increases above 700 ℃, the sheet resistance of the thin film increases rapidly as the heat treatment temperature increases. This means that the tantalum diffusion barrier does not prevent the diffusion of copper and reacts with the silicon organ to form copper silicide (Cu -silicide was formed. This is because the electrical resistance is increased by the reaction between the copper thin film and the tantalum diffusion preventing film, which are the main wiring materials, in the multi-layer metal wiring. Such reactions cause fatal defects that destroy the shallow junctions of the device during actual device fabrication. However, in FIG. 3, the nitrogen concentration in the tantalum diffusion barrier is 40 at. In the case of more than%, as the heat treatment temperature increases, the sheet resistance of the copper thin film is maintained without any significant change, and the tantalum diffusion barrier effectively prevents the diffusion of copper and prevents the deterioration of the electrical and physical properties of the copper thin film. It is showing. Therefore, the nitrogen concentration in the tantalum diffusion barrier was 40 at. Thermal of multi-layered metal wiring up to 900 ° C when above%. Electrical characteristics can be maintained.
도 5는 실리콘/탄탈 확산 방지막/구리 (Si/TaSiNx/Cu)구조의 다층 금속 배선을 열처리한 후, 실리콘내부에 생성된 결함을 노말스키 (Nomarski) 현미경으로 관찰한 사진을 타나낸 것으로, (a)는 600℃에서 열처리된 실리콘/28at.%질소의 탄탈확산방지막/구리 다층구조 금속배선인 경우이고, (b)는 700℃에서 열처리된 실리콘/28at.%질소의 탄탈확산방지막/구리 다층구조 금속배선, (c)는 800℃에서 열처리된 실리콘/40 at.%질소의 탄탈확산방지막/구리 다층구조 금속배선, (d)는 900℃에서 열처리된 실리콘/40at.%질소의 탄탈확산방지막/구리 다층구조 금속배선인 경우이며, (e)는 600℃에서 열처리된 실리콘/구리 다층구조 금속배선내의 실리콘내부에 생성된 결함을 보여준다. 도 5(b)에서 탄탈 확산 방지막내의 질소 농도가 28 at. % 이하의 경우는, 700℃ 부터 실리콘/탄탈 확산 방지막 계면에서 구리금속과 실리콘과 실리사이드 반응에 반응에 의한 피라미드 모양의 결함이 나타남을 볼 수 있다. 그러나 탄탈 확산 방지막의 질소 농도가 40 at. % 이상의 경우, 도 5(d)에 나타난 바와 같이 900℃ 까지 실리콘내부에 이러한 결함이 나타나지 않았다. 따라서 40 at. %이상의 질소 농도를 가진 탄탈 확산 방지막을 사용할 경우 900℃ 까지 구리의 확산을 방지할 수 있다는 것을 알 수 있다. 그 이유는 도 1과 관련된 설명에서 밝힌 바와 같이 질소 농도의 증가에 따른 탄탈 확산 방지막의 미세구조 비정질화 때문이다. 즉, 구리금 속의 확산 경로가 되는 확산 방지막의 결정립계를 미세화하고 비정질화함으로써 구리금속의 확산이 방지되는 효과를 가져올 수 있기 때문이다. 또, 결정립계에 존재하는 40 at. %이상의 잉여의 질소원자가 구리의 확산을 막을 뿐만 아니라, 탄탈실리나이트라이드의 결정화를 고온 열처리에서도 억제함으로써 지속적인 미세구조 비정질화를 통해 다층 구조 금속 배선의 열적. 전기적 특성을 향상시킴을 알 수 있다.FIG. 5 shows a photograph of a silicon / tantal diffusion barrier / copper (Si / TaSiN × / Cu) structure after heat treatment, followed by a Normalsky microscope for defects generated in silicon. (a) is the case of tantalum diffusion barrier / copper of silicon / 28at.% nitrogen heat-treated at 600 ° C, and (b) is the tantalum diffusion barrier / copper of silicon / 28at.% nitrogen heat-treated at 700 ° C. Multilayer metallization, (c) Tantalum diffusion barrier / copper of silicon / 40 at.% Nitrogen heat-treated at 800 ° C Multi-layered metallization, (d) Tantalum diffusion of silicon / 40at.% Nitrogen heat-treated at 900 ° C In the case of the barrier / copper multilayer metallization, (e) shows defects generated in the silicon in the silicon / copper multilayered metallization heat treated at 600 ° C. In FIG. 5 (b), the nitrogen concentration in the tantalum diffusion barrier is 28 at. In the case of% or less, it can be seen that the pyramidal defects due to the reaction of the copper metal, the silicon and the silicide reaction appear at the silicon / tantalum diffusion barrier interface from 700 ° C. However, the concentration of nitrogen in the tantalum diffusion barrier was 40 at. In the case of more than%, such defects did not appear in the silicon up to 900 ° C as shown in FIG. Thus 40 at. It can be seen that the use of a tantalum diffusion barrier with a nitrogen concentration of more than% can prevent copper diffusion up to 900 ° C. The reason for this is due to the microstructure amorphousness of the tantalum diffusion barrier according to the increase of the nitrogen concentration as shown in the description related to FIG. 1. That is, it is because the diffusion of the copper metal can be prevented by making the grain boundary of the diffusion barrier film which becomes the diffusion path in the copper metal fine and amorphous. Moreover, 40 at. Present in a grain boundary. Excess nitrogen atoms not only prevent the diffusion of copper, but also suppress the crystallization of tantalum silicide even at high temperature heat treatment, so that the thermal structure of the multi-layered metal wiring through continuous microstructure amorphization. It can be seen that it improves the electrical characteristics.
따라서, 원자 농도 28% 이하인 경우 700℃까지 열적 안정한 접촉 접합을 위한 확산 방지막으로 사용할 수 있고, 다층 금속 배선을 위한 확산 방지막의 경우 40%의 질소 원자 농도를 갖는 탄탈 확산 방지막을 사용하여 900℃까지 열적 안정한 다층 금속 배선을 수행할 수 있다. 따라서, 본 발명에서 제조된 탄탈 확산 방지막은 접촉 접합 및 다층 금속 배선에 모두 응용될 수 있는 특성을 가지고 있다.Therefore, when the atomic concentration is 28% or less, it can be used as a diffusion barrier for thermally stable contact bonding up to 700 ° C. In the case of the diffusion barrier for multilayer metal wiring, up to 900 ° C using a tantalum diffusion barrier having a nitrogen atom concentration of 40%. Thermally stable multilayer metal wiring can be performed. Therefore, the tantalum diffusion barrier film produced in the present invention has a property that can be applied to both contact bonding and multilayer metal wiring.
이상에서 상술한 바와 같이 본 발명에 의한 탄탈 확산 방지막을, 기억 소자 및 비기억 소자의 제조방법내의 새로운 접촉접합 공정 및 다층 금속 배선 공정에 이용함으로써, 고온에서 후속 열처리 하여도 반도체 및 주배선 금속의 확산을 방지할 수 있고, 그에 따라 전기적 특성의 열화 및 결함이 전혀 발생하지 않아, 기존의 확산 방지막을 이용한 경우보다 월등히 우수한 전기적 특성을 가지는 반도체 소자를 제공할 수 있다.As described above, the tantalum diffusion barrier according to the present invention is used for the novel contact bonding process and the multilayer metal wiring process in the manufacturing method of the memory element and the non-memory element, so that the semiconductor and the main wiring metal may be subjected to subsequent heat treatment at high temperature. The diffusion can be prevented, and thus deterioration and defects of the electrical characteristics do not occur at all, thereby providing a semiconductor device having excellent electrical characteristics than in the case of using a conventional diffusion barrier.
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