KR100246359B1 - Illumination system of semiconductor exposure apparatus - Google Patents

Illumination system of semiconductor exposure apparatus Download PDF

Info

Publication number
KR100246359B1
KR100246359B1 KR1019970049038A KR19970049038A KR100246359B1 KR 100246359 B1 KR100246359 B1 KR 100246359B1 KR 1019970049038 A KR1019970049038 A KR 1019970049038A KR 19970049038 A KR19970049038 A KR 19970049038A KR 100246359 B1 KR100246359 B1 KR 100246359B1
Authority
KR
South Korea
Prior art keywords
illumination system
lamp
exposure apparatus
elliptical mirror
semiconductor exposure
Prior art date
Application number
KR1019970049038A
Other languages
Korean (ko)
Other versions
KR19990026747A (en
Inventor
금은섭
Original Assignee
김영환
현대반도체주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김영환, 현대반도체주식회사 filed Critical 김영환
Priority to KR1019970049038A priority Critical patent/KR100246359B1/en
Publication of KR19990026747A publication Critical patent/KR19990026747A/en
Application granted granted Critical
Publication of KR100246359B1 publication Critical patent/KR100246359B1/en

Links

Images

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/702Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems

Abstract

본 발명은 반도체 노광장치의 조명계에 관한 것으로, 종래에는 램프의 장착위치에 따라 조명계의 개구수가 변경되어 노광특성이 달라지는 문제점이 있었던바, 본 발명의 반도체 노광장치의 조명계는 램프에서 발산된 광을 반사시키는 타원거울의 위치를 조절할 수 있는 타원거울 위치조절나사를 설치함으로써 램프의 위치조절 시 타원거울의 위치도 조절하여 노광특성에 변화가 없게 한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an illumination system of a semiconductor exposure apparatus. In the related art, a numerical aperture of an illumination system is changed according to a mounting position of a lamp, and thus exposure characteristics are changed. By installing an elliptical mirror position adjusting screw that adjusts the position of the elliptical mirror to reflect, the position of the elliptical mirror is also adjusted during the lamp position adjustment so that the exposure characteristics are not changed.

Description

반도체 노광장치의 조명계Illumination system of semiconductor exposure apparatus

본 발명은 반도체 노광장치에 관한 것으로, 특히 반도체 노광장치의 조명계에 관한 것이다.The present invention relates to a semiconductor exposure apparatus, and more particularly to an illumination system of a semiconductor exposure apparatus.

종래의 반도체 노광장치의 조명계는, 도 1에 도시한 바와 같이, 광원인 램프(1)와, 이 램프(1)에서 발산된 광을 반사시키는 타원거울(2)과, 상기 램프(1)의 위치를 조절하도록 설치되는 램프 위치조절나사(3a,3b,3c)를 포함하여 구성된다.As shown in FIG. 1, a conventional illumination system of a semiconductor exposure apparatus includes a lamp 1 that is a light source, an elliptical mirror 2 that reflects light emitted from the lamp 1, and an arrangement of the lamp 1. It comprises a lamp positioning screws (3a, 3b, 3c) which is installed to adjust the position.

상기 램프 위치조절나사(3a,3b,3c)는 램프(1)를 엑스(X)축, 와이(Y)축, 제트(Z)축의 방향으로 이동시키는 엑스축 조절나사(3a), 와이축 조절나사(3b), 제트축 조절나사(3c)로 구성된다.The lamp position adjusting screws 3a, 3b, and 3c are X-axis adjusting screws 3a and Y-axis adjusting screws for moving the lamp 1 in the directions of the X (X) axis, the Y (Y) axis, and the jet (Z) axis. 3b) and jet shaft adjusting screw 3c.

상기와 같은 구성을 가진 종래의 반도체 노광장치의 조명계는 상기 램프 위치조절나사(3a,3b,3c)를 이용하여 조명계의 균일도를 조절한다.The illumination system of the conventional semiconductor exposure apparatus having the above configuration adjusts the uniformity of the illumination system by using the lamp position adjusting screws (3a, 3b, 3c).

첨부한 도 3은 종래 조명계의 유효 집속광 원리를 도시한 개략도로서, 램프(1)에서 발산된 광은 타원거울(2)을 통해 전면으로 반사되고 이 광은 차광판(4)을 통과한 후 집속 렌즈(5)를 거쳐 마스크(6)에 도달한다.3 is a schematic diagram showing the principle of the effective focused light of the conventional illumination system, wherein the light emitted from the lamp 1 is reflected to the front through the elliptical mirror 2 and the light is focused after passing through the light shielding plate 4. The mask 6 is reached via the lens 5.

그러나 상기와 같은 종래의 반도체 노광장치의 조명계는 타원거울(2)이 고정되어 있고 램프(1)의 위치만을 조절하여 조명 균일도를 조절하였으므로 램프 위치조절나사(3a,3b,3c)를 이용하여 램프(1)의 위치를 조절하면, 도 3에 도시한 바와 같이, 노광원의 위치변경에 의해 램프(1)와 차광판(4)과의 거리가 상이하게 바뀌므로 광이 차광판(4)을 통과할 때 조명계의 개구수가 변하는 문제점이 있었다.However, the illumination system of the conventional semiconductor exposure apparatus as described above, since the elliptical mirror 2 is fixed and the illumination uniformity is adjusted by adjusting only the position of the lamp 1, the lamp is adjusted using the lamp position adjusting screws 3a, 3b, and 3c. When the position of (1) is adjusted, as shown in Fig. 3, the distance between the lamp 1 and the light shielding plate 4 is changed differently by changing the position of the exposure source, so that light can pass through the light shielding plate 4. When the numerical aperture of the illumination system was changed.

노광장치에서의 가간섭성(coherence)은 σ=

Figure 1019970049038_B1_M0001
(NAill; 조명계 개구수, NAlens; 렌즈 개구수)으로 주어지며 상기와 같이 렌즈 개구수 값은 일정하나 조명계 개구수 값이 램프(1)의 위치에 따라 변화하면 가간섭성도 변화하여 집속 렌즈(5)의 성능이 저하되므로 전체적인 노광장치의 성능이 저하되는 문제점이 있었던바, 이에 대한 보완이 요구되어 왔다.Coherence in the exposure apparatus is σ =
Figure 1019970049038_B1_M0001
(NAill; illumination system numerical aperture, NAlens; lens numerical aperture) and the lens numerical aperture value is constant as described above, but when the illumination system numerical aperture value changes according to the position of the lamp 1, the coherence is also changed and the focusing lens 5 Since the performance of) decreases, there is a problem that the performance of the overall exposure apparatus is deteriorated.

따라서, 본 발명은 상기와 같은 문제점을 감안하여 안출한 것으로서, 램프의 위치를 조절할 때 타원거울의 위치도 조절하여 광이 차광판을 통과할 때 조명계 개구수를 일정하게 유지시켜주는 반도체 노광장치의 조명계를 제공하는데 그 목적이 있다.Accordingly, the present invention has been made in view of the above problems, and also adjusts the position of the elliptical mirror when adjusting the position of the lamp to maintain a constant numerical aperture of the illumination system when light passes through the light shielding plate. The purpose is to provide.

도 1은 종래 반도체 노광장치의 조명계를 도시한 사시도.1 is a perspective view showing an illumination system of a conventional semiconductor exposure apparatus.

도 2는 본 발명에 따른 반도체 노광장치의 조명계를 도시한 사시도.2 is a perspective view showing an illumination system of a semiconductor exposure apparatus according to the present invention.

도 3은 종래 조명계의 유효 집속광 원리를 도시한 개략도.3 is a schematic diagram showing the principle of the effective focused light of the conventional illumination system.

도 4는 본 고안에 따른 조명계의 유효 집속광 원리를 도시한 개략도.Figure 4 is a schematic diagram showing the principle of the effective focused light of the illumination system according to the present invention.

(도면의 주요부분에 대한 부호의 설명)(Explanation of symbols for the main parts of the drawing)

1; 램프 2; 타원거울One; Lamp 2; Oval mirror

3a,3b,3c; 램프 위치조절나사 4; 차광판3a, 3b, 3c; Lamp positioning screw 4; Shading plate

5; 집속 렌즈 6; 마스크5; Focusing lens 6; Mask

10; 고정판 11a,11b,11c; 타원거울 위치조절나사10; Fixing plates 11a, 11b, 11c; Elliptical Mirror Positioning Screw

상기와 같은 목적을 달성하기 위하여 본 발명은 광원인 램프와, 이 램프에서 발산된 광을 반사시키는 타원거울과, 상기 램프의 위치를 조절하도록 설치되는 램프 위치조절나사와, 상기 타원거울의 위치를 조절하여 조명계 개구수를 일정하게 유지시키도록 설치되는 타원거울 위치조절나사를 포함하여 구성된 것을 특징으로 하는 반도체 노광장치의 조명계가 제공된다.In order to achieve the above object, the present invention provides a lamp which is a light source, an elliptical mirror for reflecting light emitted from the lamp, a lamp position adjusting screw installed to adjust the position of the lamp, and a position of the elliptical mirror. There is provided an illumination system of a semiconductor exposure apparatus, comprising an elliptical mirror position adjustment screw installed to adjust and maintain a constant number of illumination system.

이하, 본 발명에 따른 반도체 노광장치의 조명계의 일실시예를 첨부한 도면을 참조로 하여 상세히 설명하면 다음과 같다.Hereinafter, an embodiment of an illumination system of a semiconductor exposure apparatus according to the present invention will be described in detail with reference to the accompanying drawings.

본 발명의 반도체 노광장치의 조명계는, 도 2에 도시한 바와 같이, 광원인 램프(1)와, 이 램프(1)에서 발산된 광을 반사시키는 타원거울(2)과, 상기 램프(1)의 위치를 조절하도록 설치되는 램프 위치조절나사(3a,3b,3c)를 포함하여 구성되는 것은 종래와 동일하다.As shown in FIG. 2, the illumination system of the semiconductor exposure apparatus of the present invention includes a lamp 1 as a light source, an elliptical mirror 2 for reflecting light emitted from the lamp 1, and the lamp 1. It is the same as the conventional one, including the lamp position adjusting screws (3a, 3b, 3c) is installed to adjust the position of.

상기 램프 위치조절나사(3a,3b,3c)는 램프(1)를 엑스(X)축, 와이(Y)축, 제트(Z)축의 방향으로 이동시키는 엑스축 조절나사(3a), 와이축 조절나사(3b), 제트축 조절나사(3c)로 구성된다.The lamp position adjusting screws 3a, 3b, and 3c are X-axis adjusting screws 3a and Y-axis adjusting screws for moving the lamp 1 in the directions of the X (X) axis, the Y (Y) axis, and the jet (Z) axis. 3b) and jet shaft adjusting screw 3c.

본 발명의 타원거울(2)은 고정판(10)에 일체로 부착되어 있고, 상기 고정판(10)의 하부에는 타원거울(2)의 위치를 조절하여 조명계 개구수를 일정하게 유지시키도록 타원거울 위치조절나사(11a,11b,11c)가 설치된다.The elliptical mirror 2 of the present invention is integrally attached to the fixed plate 10, the lower portion of the fixed plate 10 to adjust the position of the elliptical mirror (2) to maintain the illumination system numerical aperture constant position Adjusting screws 11a, 11b and 11c are provided.

상기 타원거울 위치조절나사(11a,11b,11c)는 램프 위치조절나사(3a,3b,3c)와 마찬가지로 타원거울(2)을 엑스(X)축, 와이(Y)축, 제트(Z)축의 방향으로 이동시키는 엑스축 조절나사(11a), 와이축 조절나사(11b), 제트축 조절나사(11c)로 구성된다.The elliptical mirror position adjusting screws (11a, 11b, 11c) is similar to the lamp position adjusting screws (3a, 3b, 3c), the elliptical mirror (2) of the X (X) axis, Y (Y) axis, jet (Z) axis X-axis adjusting screw 11a, Y-axis adjusting screw 11b, and jet-axis adjusting screw 11c to move in the direction.

상기와 같은 구성을 가진 본 발명의 반도체 노광장치의 조명계의 동작을 설명하면 다음과 같다.Referring to the operation of the illumination system of the semiconductor exposure apparatus of the present invention having the above configuration is as follows.

먼저, 상기 램프(1)의 엑스축, 와이축, 제트축 조절나사(3a,3b,3c)를 이용하여 조명계의 균일도를 조절한 후 타원거울 위치조절나사(11a,11b,11c)를 이용하여 조명계 개구수를 목표치에 맞게 조정한다.First, the uniformity of the illumination system is adjusted using the X-axis, the Y-axis, and the jet-axis adjusting screws 3a, 3b, and 3c of the lamp 1, and then the opening of the illumination system using the elliptical mirror position adjusting screws 11a, 11b, and 11c. Adjust the number to your target.

첨부한 도 4는 본 발명에 따른 조명계의 유효 집속광 원리를 도시한 개략도로서, 본 발명의 반도체 노광장치의 조명계는 상기 타원거울 위치조절나사(11a,11b, 11c)를 이용하여 타원거울(2)의 위치를 조절하므로 램프(1)에서 발산된 광이 타원거울(2)을 통해 전면으로 반사되어 차광판(4)을 통과할 때 조명계 개구수를 일정하게 유지시켜준다.4 is a schematic diagram showing the principle of the effective focused light of the illumination system according to the present invention, the illumination system of the semiconductor exposure apparatus of the present invention is an elliptical mirror (2) using the elliptical mirror position adjusting screws (11a, 11b, 11c) By adjusting the position of), the light emitted from the lamp 1 is reflected to the front through the elliptical mirror 2 to keep the numerical aperture of the illumination system constant when passing through the light shield plate 4.

본 발명의 반도체 노광장치의 조명계에 의하면 조명계 개구수를 일정하게 유지시켜 주므로 노광장치에서의 가간섭성을 일정하게 유지시켜주고 렌즈의 성능 저하를 방지하여 노광장치의 성능에 변화가 없게 할 수 있는 효과가 있다.According to the illumination system of the semiconductor exposure apparatus of the present invention, since the numerical aperture of the illumination system is kept constant, the coherence in the exposure apparatus can be kept constant and the performance of the exposure apparatus can be kept unchanged by preventing the degradation of the lens performance. It works.

Claims (1)

광원인 램프와, 이 램프에서 발산된 광을 반사시키는 타원거울과, 상기 램프의 위치를 조절하도록 설치되는 램프 위치조절나사와, 상기 타원거울의 위치를 조절하여 조명계 개구수를 일정하게 유지시키도록 설치되는 타원거울 위치조절나사를 포함하여 구성된 것을 특징으로 하는 반도체 노광장치의 조명계.A lamp as a light source, an elliptical mirror for reflecting light emitted from the lamp, a lamp positioning screw installed to adjust the position of the lamp, and a position of the elliptical mirror to maintain a constant numerical aperture of the illumination system Illumination system of a semiconductor exposure apparatus comprising an elliptical mirror position adjustment screw installed.
KR1019970049038A 1997-09-26 1997-09-26 Illumination system of semiconductor exposure apparatus KR100246359B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019970049038A KR100246359B1 (en) 1997-09-26 1997-09-26 Illumination system of semiconductor exposure apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019970049038A KR100246359B1 (en) 1997-09-26 1997-09-26 Illumination system of semiconductor exposure apparatus

Publications (2)

Publication Number Publication Date
KR19990026747A KR19990026747A (en) 1999-04-15
KR100246359B1 true KR100246359B1 (en) 2000-03-15

Family

ID=19521747

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970049038A KR100246359B1 (en) 1997-09-26 1997-09-26 Illumination system of semiconductor exposure apparatus

Country Status (1)

Country Link
KR (1) KR100246359B1 (en)

Also Published As

Publication number Publication date
KR19990026747A (en) 1999-04-15

Similar Documents

Publication Publication Date Title
US5222112A (en) X-ray pattern masking by a reflective reduction projection optical system
KR0135834B1 (en) Light source with shadow removing double reflector
TWI502288B (en) An exposure apparatus, an exposure method, a manufacturing method of an element, and an opening plate
US5978072A (en) Exposure apparatus
KR100246359B1 (en) Illumination system of semiconductor exposure apparatus
US4171904A (en) Image forming device of copying apparatus of the variable duplicate size type
JP2018205682A (en) Exposure apparatus
JPH0529099B2 (en)
CN115735161A (en) Optical system with aperture stop
US5012277A (en) Image exposure device
TW200303970A (en) Light source unit, lighting device, exposure device and exposure method
KR102439935B1 (en) Projection exposure apparatus
CN109782543B (en) Illumination system and photoetching machine
KR100500771B1 (en) Scanning-slit exposure device
KR100865554B1 (en) Exposure apparatus
KR0147602B1 (en) Lighting apparatus for increase of contrast
KR20090053693A (en) Exposure apparatus and device manufacturing method
JP3322833B2 (en) Illumination apparatus and method, and laser processing apparatus and method using the same
KR100579325B1 (en) Adjusting Apparatus of Rod Lens for Liquid Crystal Projector
KR100186740B1 (en) Exposure apparatus of semiconductor device
US3074313A (en) Photocopier apparatus
JPH09138468A (en) Original illumination device
KR100232582B1 (en) Reflection exposure method and lamp housing of exposure
JPH0743496B2 (en) Image exposure device
KR100219403B1 (en) Back mirror adjusting apparatus of optical system for semiconductor fabrication

Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20091126

Year of fee payment: 11

LAPS Lapse due to unpaid annual fee