KR100237009B1 - Method for forming oxide film of semiconductor device - Google Patents
Method for forming oxide film of semiconductor device Download PDFInfo
- Publication number
- KR100237009B1 KR100237009B1 KR1019960074971A KR19960074971A KR100237009B1 KR 100237009 B1 KR100237009 B1 KR 100237009B1 KR 1019960074971 A KR1019960074971 A KR 1019960074971A KR 19960074971 A KR19960074971 A KR 19960074971A KR 100237009 B1 KR100237009 B1 KR 100237009B1
- Authority
- KR
- South Korea
- Prior art keywords
- oxide film
- semiconductor device
- wafer
- vapor deposition
- chemical vapor
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
Abstract
반도체 소자를 화학기상증착방법으로 산화막을 형성할 때 화학기상증착튜브의 특성상 웨이퍼가 로드되는 위치에 따라서 산화막의 균일성에 큰 차이를 보인다. 따라서 상기 산화막을 균일하게 형성되도록 웨이퍼의 위치에 따른 가장 알맞은 조건으로 나누어 두 번에 걸쳐 산화공정을 실시한다. 그 결과 다량의 웨이퍼가 공급되더라도 균일한 산화막이 형성되도록 하는 반도체 소자의 산화막 형성방법이 개시된다.When a semiconductor device is formed of an oxide film by a chemical vapor deposition method, the uniformity of the oxide film is significantly changed according to the position of the wafer loaded due to the characteristics of the chemical vapor deposition tube. Therefore, the oxidation process is performed twice in the most suitable condition according to the position of the wafer so that the oxide film is uniformly formed. As a result, an oxide film forming method of a semiconductor device is disclosed in which a uniform oxide film is formed even when a large amount of wafers are supplied.
Description
본 발명은 반도체 소자의 산화막 형성방법에 관한 것으로 특히, 화학기상증착 튜브 내에 다수의 웨이퍼를 넣어 산화막을 형성하여도 일정한 균일성을 갖도록 하는 반도체 소자의 산화막 형성방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of forming an oxide film of a semiconductor device, and more particularly, to a method of forming an oxide film of a semiconductor device in which a plurality of wafers are put in a chemical vapor deposition tube to have a uniform uniformity.
일반적으로 화학기상증착은 웨이퍼 상에 형성시키려는 박막재료를 구성하는 원소로 된 1종 혹은 그 이상의 화합물, 단체의 가스를 기판위에 공급해, 기상 또는 기판 표면에서의 화학 반응에 의해서 소망하는 박막을 형성시키는 방법이다. 종래 반도체 소자의 산화막을 화학기상증착방법으로 형성할 때 화학기상증착 튜브의 특성상 웨이퍼가 로드되는 위치에 따라 산화막의 균일성은 크게 달라진다. 이것은 혼합가스의 흐름이 중력 및 압력 등의 영향으로 균일하게 웨이퍼에 증착되지 않기 때문이다. 따라서 웨이퍼 각각의 산화막의 두께가 현저한 차이로 인하여 결국에는 반도체 소자의 특성을 저하시키는 요인으로 작용하게 된다.In general, chemical vapor deposition is a process of supplying one or more compounds of the elements constituting the thin film material to be formed on a wafer or a gas of a single element on a substrate to form a desired thin film by gas phase or chemical reaction on the surface of the substrate. Way. When the oxide film of a conventional semiconductor device is formed by a chemical vapor deposition method, the uniformity of the oxide film varies greatly depending on the position at which the wafer is loaded due to the characteristics of the chemical vapor deposition tube. This is because the flow of the mixed gas is not uniformly deposited on the wafer under the influence of gravity and pressure. Therefore, due to the significant difference in the thickness of the oxide film of each wafer, it eventually acts as a factor that degrades the characteristics of the semiconductor device.
따라서 본 발명은 산화공정시 한 공정에 다수의 웨이퍼를 넣어도 균일한 산화막이 형성되도록 두 번에 걸친 산화공정으로 상기 문제점을 해소할 수 있는 반도체 소자의 산화막 형성방법을 제공하는데 그 목적이 있다.Accordingly, an object of the present invention is to provide a method of forming an oxide film of a semiconductor device which can solve the above problem by two oxidation processes so that a uniform oxide film is formed even if a plurality of wafers are put in one step during the oxidation process.
상기 목적을 달성하기 위한 본 발명은 화학 기상 증착 튜브 내에 다수의 웨이퍼를 하부에서부터 상부까지 적층된 구조를 형성하도록 로드하는 단계와, 상기 단계로부터 0.5 내지 1Torr 이상의 압력 및 혼합가스 2000 내지 2100cc 이하의 양에서 1차 산화막 형성 공정을 실시하는 단계와, 상기 단계로부터 0.5 내지 1Torr 이하의 압력 및 혼합가스 2000 내지 2100cc 이상의 양에서 2차 산화막 형성공정을 실시하는 단계로 이루어지는 것을 특징으로 한다.The present invention for achieving the above object is a step of loading a plurality of wafers in a chemical vapor deposition tube to form a stacked structure from the bottom to the top, from the pressure of 0.5 to 1 Torr or more and the amount of mixed gas 2000 to 2100 cc or less And performing a secondary oxide film forming process at a pressure of 0.5 to 1 Torr or less and a mixed gas of 2000 to 2100 cc or more from the above step.
첨부도면은 웨이퍼를 튜브 내에 로드하는 본체인 보트(Boat)의 단면도.The attached drawing is a sectional view of a boat which is a main body which loads a wafer into a tube.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 웨이퍼 2 : 보트1: wafer 2: boat
이하, 첨부도면을 참조하여 본 발명을 상세히 설명하면 다음과 같다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
첨부도면은 웨이퍼를 튜브 내에 로드하는 본체인 보트(Boat) 및 웨이퍼(1)를 나타낸 도면으로서, 보트(2)의 상부에 로드된 웨이퍼(1)의 산화막이 균일하게 형성되는 조건과 보트(2)의 하부에 로드된 웨이퍼(1)의 산화막이 균일하게 형성되는 두 조건을 나누어 산화공정을 실시한다. 구체적인 예로 튜브내 분위기를 0.5 내지 1Torr의 압력과 2000 내지 2100cc의 양의 혼합가스를 기준으로 하여 보트(2) 상부에 위치한 웨이퍼(1)는 0.5 내지 1Torr 이상의 압력과 혼합가스 2000 내지 2100cc 이하의 양으로 1차 산화공정을 실시한다. 그리고 보트(2) 하부에 위치한 웨이퍼(1)는 0.5 내지 1Torr 이하의 압력과 혼합가스 2000 내지 2100cc 이상의 양으로 2차 산화공정을 실시한다. 이때 상기 혼합가스는 SiH4:N2O가 1:45 내지 55의 비율로 공급되며 상기 1 및 2차 산화공정인 인-시투(In-situ)로 실시한다.The accompanying drawings show a boat and a wafer 1, which are main bodies for loading a wafer into a tube, in which the oxide film of the wafer 1 loaded on the top of the boat 2 is uniformly formed and the boat 2 The oxidation process is performed by dividing the two conditions in which the oxide film of the wafer 1 loaded on the bottom of the substrate 1 is uniformly formed. As a specific example, the wafer 1 placed on the top of the boat 2 based on the pressure of 0.5 to 1 Torr and the amount of mixed gas of 2000 to 2100 cc in the tube atmosphere has a pressure of 0.5 to 1 Torr or more and a quantity of 2000 to 2100 cc or less The primary oxidation step is carried out. The wafer 1 located below the boat 2 is subjected to a secondary oxidation process with a pressure of 0.5 to 1 Torr or less and a mixed gas of 2000 to 2100 cc or more. At this time, the mixed gas is supplied in a ratio of 1:45 to 55 of SiH 4 : N 2 O and is carried out by in-situ, which is the first and second oxidation processes.
상술한 바와 같이 웨이퍼의 산화막이 균일성을 갖도록 하는 두 조건으로 두 번에 걸쳐 산화공정 실시하므로 다량의 웨이퍼를 한 번에 산화공정을 할 수 있고 소자의 특성 저하를 방지하고 생산성 측면에서 좋은 효과가 있다.As described above, the oxidation process is performed twice in two conditions to make the oxide film of the wafer uniform. Therefore, a large amount of wafers can be oxidized at one time, preventing deterioration of device characteristics and having good effects in terms of productivity. have.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960074971A KR100237009B1 (en) | 1996-12-28 | 1996-12-28 | Method for forming oxide film of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960074971A KR100237009B1 (en) | 1996-12-28 | 1996-12-28 | Method for forming oxide film of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR19980055735A KR19980055735A (en) | 1998-09-25 |
| KR100237009B1 true KR100237009B1 (en) | 2000-01-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019960074971A KR100237009B1 (en) | 1996-12-28 | 1996-12-28 | Method for forming oxide film of semiconductor device |
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| KR (1) | KR100237009B1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| KR102480740B1 (en) * | 2018-03-20 | 2022-12-23 | 가부시키가이샤 코쿠사이 엘렉트릭 | Semiconductor device manufacturing method, substrate processing method, substrate processing device and program |
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1996
- 1996-12-28 KR KR1019960074971A patent/KR100237009B1/en not_active IP Right Cessation
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| Publication number | Publication date |
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| KR19980055735A (en) | 1998-09-25 |
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