KR100232158B1 - Bst etching method - Google Patents
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- KR100232158B1 KR100232158B1 KR1019960073512A KR19960073512A KR100232158B1 KR 100232158 B1 KR100232158 B1 KR 100232158B1 KR 1019960073512 A KR1019960073512 A KR 1019960073512A KR 19960073512 A KR19960073512 A KR 19960073512A KR 100232158 B1 KR100232158 B1 KR 100232158B1
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- 238000005530 etching Methods 0.000 title claims abstract description 53
- 238000000034 method Methods 0.000 title claims abstract description 44
- 238000009616 inductively coupled plasma Methods 0.000 claims abstract description 25
- 239000000463 material Substances 0.000 claims description 7
- 229920002120 photoresistant polymer Polymers 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- 239000006227 byproduct Substances 0.000 abstract description 14
- 239000003989 dielectric material Substances 0.000 description 6
- 239000000047 product Substances 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- 229910002367 SrTiO Inorganic materials 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
- H01L21/31122—Etching inorganic layers by chemical means by dry-etching of layers not containing Si, e.g. PZT, Al2O3
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
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Abstract
Ar/Cl2가스 시스템을 이용한 BST(Ba1-XSrXTiO3) 식각방법으로, BST층상에 산화막을 형성하고 패터닝하여 일정영역의 BST층을 노출시킨 후, Ar/Cl2/SF6가스 시스템을 에천트로 사용하고 저압, 고밀도인 ICP(Inductively Coupled Plasma) 방식을 이용하여 노출된 BST층을 식각함으로써, BST의 식각율 및 마스크에 대한 선택비가 향상되고 잔류물 및 부산물을 제거할 수 있다.After the BST (Ba 1-X Sr X TiO 3 ) etching method using an Ar / Cl 2 gas system, an oxide film is formed and patterned on the BST layer to expose a BST layer in a predetermined region, and then Ar / Cl 2 / SF 6 gas is used. By using the system as an etchant and etching the exposed BST layer using a low pressure, high density Inductively Coupled Plasma (ICP) method, the etch rate of the BST and the selectivity to the mask can be improved and residues and by-products can be removed.
Description
본 발명은 BST(Ba1-XSrXTiO3) 식각방법에 관한 것으로, 특히 Ar/Cl2가스 시스템을 이용한 BST 식각방법에 관한 것이다.The present invention relates to a BST (Ba 1-X Sr X TiO 3 ) etching method, and more particularly, to a BST etching method using an Ar / Cl 2 gas system.
일반적으로, 차세대 고집적 Gbit 규모의 디램(DRAM)을 개발하기 위해서 더좁은 면적에서도 기존의 요구되는 전하 저장 밀도(25-30 fF/cell)를 유지할 수 있도록 더 높은 유전율을 갖는 새로운 유전체의 개발이 필요하다.In general, the development of the next generation of highly integrated Gbit-scale DRAM (DRAM) requires the development of a new dielectric with a higher dielectric constant to maintain the required charge storage density (25-30 fF / cell) even in smaller areas. Do.
현재, 16Mbit와 64Mbit DRAM에 사용 중인 Si3N4를 대치할만한 물질로는 Ta2O5(εr=20-25)와 같은 물질과 고유전 물질들(εr=100-1500)이 많이 연구되어 왔다.Currently, many materials such as Ta 2 O 5 (ε r = 20-25) and high dielectric materials (ε r = 100-1500) have been studied to replace Si 3 N 4 used in 16- and 64-Mbit DRAMs. Has been.
특히, 고유전 물질 중에 SrTiO3와 Ba1-XSrXTiO3는 10㎓ 이상의 고진동수에서도 고유전 특성을 잃지 않고 화학적 열적으로도 매우 안정되어 있어서, Gbit 규모의 디램을 만드는데 매우 적합한 유전 물질들로 생각되어 왔다.In particular, SrTiO 3 and Ba 1-X Sr X TiO 3 among the high dielectric materials are highly chemically and thermally stable without losing their high dielectric properties even at high frequencies of 10 ㎓ or higher, which makes them suitable for making Gbit-scale DRAMs. Has been considered.
이러한 물질들이 소자에 응용되기 위해서는 소자의 특성과 관련된 물질의 물리적 전기적 특성을 향상시킨다든지, 소자의 구조를 최대한 단순화시킨다든지, 전극 재료를 포함하여 이러한 고유전 물질의 건식 식각 공정을 개발한다든지하는 해결되어야 할 많은 기술적인 문제들을 가지고 있다.These materials can be applied to devices by improving the physical and electrical properties of materials related to device characteristics, simplifying the structure of devices as much as possible, or developing dry etching processes for these high dielectric materials, including electrode materials. There are many technical problems to be solved.
고유전 물질을 디램에 응용하는데 있어서도 전기적 특성을 향상시키고 집적도를 높이기 위해서는 고유전 물질을 건식 식각하는 공정이 필요하다.In the application of high dielectric materials to DRAM, a process of dry etching high dielectric materials is needed to improve electrical characteristics and increase integration.
이와 관련하여, 최근에는 Pb(Zr1-XTiX)O3, SrTiO3와 같은 고유전 물질이나 Pt, RuO2와 같은 전극 물질을 주 에천트(etchant)로 Cl2를 사용하여 건식식각하는 공정에 관한 보고들이 있다.In this regard, recently, dry etching of high dielectric materials such as Pb (Zr 1-X Ti X ) O 3 , SrTiO 3 , or electrode materials such as Pt and RuO 2 using Cl 2 as a main etchant There are reports of the process.
또한, BST 식각에 관한 종래의 기술로는 CF4, SF6, Cl2, HBr, Ar 등의 가스 시스템을 에천트로 사용하고 MERIE(Magnetically Enhanced Reactive Ion Etching) 방식을 이용하여 식각하는 방법이 알려져 있다.In addition, as a conventional technique for BST etching, a method of using a gas system such as CF 4 , SF 6 , Cl 2 , HBr, Ar, etc. as an etchant and etching using MERIE (Magnetically Enhanced Reactive Ion Etching) is known. .
MERIE 방법은 전자석을 이용하여 챔버(chamber)내에 자기장을 형성시켜줌으로써, 플라즈마(plasma) 생성을 도울 수 있도록 한 것과, 플라즈마내의 이온과 전자가 자기장과 수직한 방향으로 큰 운동에너지를 갖도록 한 것을 특징으로 한다.The MERIE method uses an electromagnet to form a magnetic field in the chamber, which helps to generate plasma, and allows ions and electrons in the plasma to have a large kinetic energy in a direction perpendicular to the magnetic field. It is done.
이러한 방식으로 BST를 식각할 경우, Ar/CF4가스 시스템에서 식각율 250Å/min의 식각속도와, SiO2를 마스크로 사용하여 Ar/Cl2가스 시스템에서 선택비 0.23의 결과를 얻은 것이 가장 좋은 결과이다.In the case of etching BST in this way, it is best to obtain an etching rate of 250 mW / min in an Ar / CF 4 gas system and a selectivity of 0.23 in an Ar / Cl 2 gas system using SiO 2 as a mask. The result is.
특히, Ar/Cl2가스 시스템을 이용하여 MERIE 식각 방식으로 BST를 식각할 경우, 식각이 매우 비효율적이고 식각 후에는 잔류물(residues)이나 Cl계의 부산물(by-product)이 형성되는 문제점을 가지고 있다.In particular, when BST is etched by a MERIE etching method using an Ar / Cl 2 gas system, etching is very inefficient and residues or by-products of Cl system are formed after etching. have.
이러한 생성물들은 식각 조건상에서 휘발성을 띄지 않으므로 식각 후, 이러한 생성물들을 제거해야 하는 공정이 추가되는 또 다른 문제점을 안고 있다.Since these products are not volatile under etching conditions, there is another problem that after etching, a process to remove these products is added.
종래 기술에 따른 BST 식각 방법에 있어서는 다음과 같은 문제점들이 있었다.The BST etching method according to the prior art has the following problems.
첫째, 식각이 비효율적이며, 식각 후에 생성되는 잔류물(residues)이나 부산물(by-product)들을 제거해야 하므로 공정이 복잡하다.First, the process is complicated because etching is inefficient and the residues or by-products generated after etching must be removed.
둘째, 부산물의 생성 및 부산물 제거 공정으로 인하여 챔버의 오염 문제가 발생한다.Second, contamination of the chamber occurs due to the generation of by-products and by-product removal processes.
본 발명은 이와 같은 문제점들을 해결하기 위한 것으로, 식각율을 향상시키고 식각시 생성되는 부산물을 제거할 수 있는 BST 식각 방법을 제공하는데 그 목적이 있다.The present invention has been made to solve such problems, and an object thereof is to provide an BST etching method capable of improving an etching rate and removing by-products generated during etching.
제1(a)도 내지 제1(d)도는 본 발명에 따른 BST 식각 공정을 보여주는 도면1 (a) to 1 (d) is a view showing a BST etching process according to the present invention
제2도는 ICP(Inductively Coupled Plasma) 소스를 발생시키는 장치를 개략적으로 보여주는 도면2 schematically shows an apparatus for generating an inductively coupled plasma source (ICP).
제3도는 ICP 파워에 따른 BST의 식각율 및 산화막과 BST의 선택비를 보여주는 그래프3 is a graph showing the etch rate of BST and the selectivity of oxide film and BST according to ICP power.
제4도는 압력에 따른 BST의 식각율 및 산화막과 BST의 선택비를 보여주는 그래프4 is a graph showing the etch rate of BST and the selectivity of oxide film and BST according to pressure
제5(a)도는 종래 기술에 따른 방법으로 BST를 식각한 후의 모습을 보여주는 사진Figure 5 (a) is a photograph showing the state after etching the BST by the method according to the prior art
제5(b)도는 본 발명에 따른 방법으로 BST를 식각한 후의 모습을 보여주는 사진Figure 5 (b) is a photograph showing the state after etching the BST by the method according to the invention
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 기판 2 : 제1산화막1 substrate 2 first oxide film
3 : BST층 4 : 제2산화막3: BST layer 4: Second oxide film
5 : 포토레지스터5: Photoresistor
본 발명에 따른 BST 식각 방법은 BST층상에 산화막을 형성하고 패터닝하여 일정영역의 BST층을 노출시킨 후, Ar/Cl2/SF6가스 시스템을 에천트로 사용하고 저압, 고밀도인 ICP(inductively Coupled Plasma) 방식을 이용하여 노출된 BST층을 식각하는데 그 특징이 있다.In the BST etching method according to the present invention, an oxide film is formed on the BST layer and patterned to expose the BST layer in a predetermined region, and then an Ar / Cl 2 / SF 6 gas system is used as an etchant and a low pressure, high density ICP (inductively coupled plasma) is used. ) Is used to etch exposed BST layer.
본 발명의 다른 특징은 BST층 식각시, ICP 파워를 600~1400W 로 하고 압력을 0.1~100mTorr 로 하는데 있다.Another feature of the present invention is to make the ICP power 600 ~ 1400W and pressure 0.1 ~ 100mTorr during BST layer etching.
상기와 같은 특징을 갖는 본 발명에 따른 BST 식각 방법을 첨부된 도면을 참조하여 설명하면 다음과 같다.Referring to the accompanying drawings, the BST etching method according to the present invention having the above characteristics is as follows.
제1(a)도 내지 제1(d)도는 본 발명에 따른 BST 식각 공정을 보여주는 도면으로써, 제1(a)도에 도시된 바와 같이, 실리콘 기판(1)상에 열산화 공정으로 제1산화막(2)을 약 5000Å 정도의 두께로 형성하고, 제1산화막(2)상에 스퍼터링(sputtering) 방법으로 BST(Ba1-XSrXTiO3)층(3)을 약 1000Å의 두께로 형성한다. 그리고, BST층(3)상에 저온 화학 기상 증착법(LPCVD)으로 제2산화막(4)을 약 6000Å 정도의 두께로 형성한다.1 (a) to 1 (d) show a BST etching process according to the present invention. As shown in FIG. 1 (a), a first step of thermal oxidation on a silicon substrate 1 is performed. An oxide film 2 is formed to a thickness of about 5000 kPa, and a BST (Ba 1-X Sr X TiO 3 ) layer 3 is formed to a thickness of about 1000 kPa by the sputtering method on the first oxide film 2. do. Then, on the BST layer 3, the second oxide film 4 is formed to a thickness of about 6000 kPa by low temperature chemical vapor deposition (LPCVD).
이어, 제1(b)도에 도시된 바와 같이, 제2산화막(4)상에 포토레지스트(5)을 형성하고 패터닝하여 제2산화막의 일정영역을 노출 시킨 후, 반응성 이온 식각 공정(RIE)으로 노출된 제2산화막(4)을 제거하여 일정영역의 BST층(3)을 노출시킨다.Subsequently, as shown in FIG. 1 (b), after forming and patterning the photoresist 5 on the second oxide film 4 to expose a predetermined region of the second oxide film, a reactive ion etching process (RIE) is performed. The exposed second oxide film 4 is removed to expose the BST layer 3 in a predetermined region.
이때, 제2산화막(4) 제거시, 에천트(etchant)는 CHF3/O2를 사용한다.At this time, when the second oxide film 4 is removed, an etchant uses CHF 3 / O 2 .
그리고, 제1(c)도에 도시된 바와 같이, 남아 있는 포토레지스트(5)를 제거하고, 제2산화막(4)을 마스크로 하여, Ar/Cl2/SF6가스 시스템을 에천트로 사용하고 저압, 고밀도인 ICP(Inductively Coupled Plasma) 방식을 이용하여 노출된 BST층(3)을 식각한다.Then, as shown in FIG. 1 (c), the remaining photoresist 5 is removed, and the Ar / Cl 2 / SF 6 gas system is used as an etchant with the second oxide film 4 as a mask. The exposed BST layer 3 is etched using a low pressure, high density Inductively Coupled Plasma (ICP) method.
이때, BST층(3) 식각시, ICP 파워는 600~1400W 로 하고 압력은 0.1~100mTorr 로 한다.At this time, when etching the BST layer 3, the ICP power is 600 ~ 1400W and the pressure is 0.1 ~ 100mTorr.
이어, 제1(d)도에 도시된 바와 같이, 남아 있는 제2산화막(4)을 제거하여 BST 식각 공정을 완료한다.Subsequently, as shown in FIG. 1 (d), the remaining second oxide film 4 is removed to complete the BST etching process.
이와 같이, BST를 식각하는데 있어서, 플라즈마의 상태, 공정압력, 에천트 등은 BST이 식각율 행상과 마스크에 대한 선택비의 확보 및 식각 후 잔류물과 부산물 제거에 영향을 미치는 요소들이다.As such, in etching BST, the state of plasma, process pressure, etchant are factors that influence the removal of residues and by-products after the etching and securing the selectivity for the etching rate process and mask.
제2도는 ICP(Inductively Coupled Plasma) 소스를 발생시키는 장치를 개략적으로 보여주는 도면으로써, 이러한 ICP는 기존의 RIE(Reactive Ion Etcher)의 챔버에 유도 코일(inducting coil)을 통하여 RF 전자장을 인가하여 고밀도 플라즈마를 생성시키고 기판에 수평한 방향의 이온 운동에너지를 독립 변수로 설정하여 조정할 수 있는 것을 특징으로 한다.2 is a schematic view showing a device for generating an ICP (Inductively Coupled Plasma) source. The ICP is applied to a chamber of a conventional reactive ion emitter (RIE) by applying an RF electromagnetic field through an inducting coil. And by adjusting the ion kinetic energy in a direction horizontal to the substrate as an independent variable.
이러한 ICP의 특징적인 요소인 ICP 파워는 BST 식각시, 식각율과 선택비에 영향을 미친다.The characteristic factor of ICP, ICP power, affects the etch rate and selectivity during BST etching.
제3도는 ICP 파워에 따른 BST의 식각율 및 산화막과 BST의 선택비를 보여주는 그래프이고, 제4도는 압력에 따른 BST의 식각율 및 산화막과 BST의 선택비를 보여주는 그래프이다.3 is a graph showing the etch rate of BST and the selectivity of oxide film and BST according to ICP power, and FIG. 4 is a graph showing the etch rate of BST and selectivity ratio of oxide film and BST according to pressure.
제3도에 도시된 바와 같이, ICP 파워를 증가시킴에 따라 BST의 식각율은 증가하고 마스크로 사용하는 산화막과 BST의 선택비는 거의 변하지 않는 결과를 보여준다. 이러한 특성은 BST의 식각율을 향상시키는데 있어서 ICP 파워를 변수로 사용할 수 있음을 보여주는 것이다.As shown in FIG. 3, as the ICP power is increased, the etch rate of BST increases and the selectivity of the oxide film and BST used as a mask hardly changes. These characteristics show that ICP power can be used as a variable to improve the etching rate of BST.
또한, BST는 Ba, Sr, Ti를 구성 원소로 하는 산화물로써, BST 식각시 기존의 식각방법으로는 쉽게 휘발성을 갖는(즉, 기화할 수 있는) 생성물(잔류물 또는 부산물)을 만들어 낼 수 없어 이러한 생성물을 따로 제거해야 했을 뿐 아니라, 100mTorr 이상의 공정압력에서의 스퍼터링에 의한 식각도 잔류물의 재증착(redeposition)으로 인해 BST의 식각이 매우 어려웠었다.In addition, BST is an oxide containing Ba, Sr, and Ti as a constituent element, and it is impossible to produce products (residues or by-products) that are easily volatile (that is, vaporizable) by conventional etching methods when etching BST. Not only did these products have to be removed separately, but the etching by sputtering at a process pressure of 100 mTorr or higher also made BST difficult to etch due to redeposition of residues.
이러한 BST를 식각하기 위해서는 100mTorr 이하의 압력에서 공정을 진행함으로써 이루어질 수 있다.In order to etch the BST, the process may be performed at a pressure of 100 mTorr or less.
즉, 챔버내의 생성물들은 압력이 낮아지는 것에 비례하여 쉽게 제거될 수 있다.That is, the products in the chamber can be easily removed in proportion to the lowering of the pressure.
제4도에 도시된 바와 같이, 약 0.1~100mTorr의 범위에서 압력이 낮아짐에 따라 BST의 식각율과 마스크로 사용하는 산화막과 BST의 선택비가 향상되는 결과를 볼 수 있다.As shown in FIG. 4, as the pressure decreases in the range of about 0.1 to 100 mTorr, the etching rate of the BST and the selectivity of the oxide film and the BST used as the mask may be improved.
제5(a)도는 종래 기술에 따른 방법으로 BST를 식각한 후의 모습을 보여주는 사진이고, 제5(b)도는 본 발명에 따른 방법으로 BST를 식각한 후의 모습을 보여주는 사진이다.Figure 5 (a) is a photograph showing the state after etching the BST by the method according to the prior art, Figure 5 (b) is a photograph showing the state after etching the BST by the method according to the present invention.
제5(a)도에 도시된 바와 같이, 종래 기술에 따른 방법은 BST 식각 후 Cl계의 부산물이 향성된다.As shown in FIG. 5 (a), in the conventional method, Cl by-products are flavored after BST etching.
이러한 부산물이 생기는 이유는 ICO의 공정조건(압력, 온도, RIE 파워, ICP 파워)에서는 부산물이 휘발성이 없기 때문이다.These by-products occur because the by-products are not volatile under ICO process conditions (pressure, temperature, RIE power, ICP power).
그러므로, 본 발명에서는 제5(b)도에 도시된 바와 같이, Ar/Cl2의 에천트에 SF6가스를 첨가함으로써 부산물을 제거할 수 있는 것이다.Therefore, in the present invention, as shown in FIG. 5 (b), by-products can be removed by adding SF 6 gas to the etchant of Ar / Cl 2 .
결론적으로, 본 발명은 Ar/Cl2/SF6가스 시스템을 ICP(Inductively Coupled Plasma)로 만들어서 BST를 빨리 식각하고 마스크로 사용되는 제2산화막은 BST에 비해 상대적으로 느리게 식각함으로써, 식각 후, 발생되는 잔류물 및 부산물을 제거할 수 있는 건식식각방법인 것이다.In conclusion, in the present invention, the Ar / Cl 2 / SF 6 gas system is made of Inductively Coupled Plasma (ICP) to quickly etch BST, and the second oxide film used as a mask is relatively slow compared to BST, so that after the etching, It is a dry etching method that can remove the residues and by-products.
본 발명에 따른 BST 식각 방법에 있어서는 다음과 같은 효과가 있다.In the BST etching method according to the present invention has the following effects.
첫째, Ar/Cl2/SF6가스 시스템을 에천트로 사용하고 저압, 고밀도인 ICP 방식을 이용함으로써, BST의 식각율 및 마스크에 대한 선택비가 향상된다.First, by using the Ar / Cl 2 / SF 6 gas system as an etchant and using a low pressure, high density ICP method, the etching rate of the BST and the selectivity to the mask are improved.
둘째, BST 식각 후, 잔류물 및 부산물이 제거되므로 공정이 간단하고 챔버의 오염 문제를 해결할 수 있다.Second, after the BST etching, residues and by-products are removed, which simplifies the process and solves the contamination problem of the chamber.
Claims (6)
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