KR100205441B1 - Growth apparatus of epitaxial layer - Google Patents
Growth apparatus of epitaxial layer Download PDFInfo
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- KR100205441B1 KR100205441B1 KR1019950046846A KR19950046846A KR100205441B1 KR 100205441 B1 KR100205441 B1 KR 100205441B1 KR 1019950046846 A KR1019950046846 A KR 1019950046846A KR 19950046846 A KR19950046846 A KR 19950046846A KR 100205441 B1 KR100205441 B1 KR 100205441B1
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Abstract
본 발명은 에픽텍셜(Epitaxial)층 성장장비에 관한 것으로써, 좀더 구체적으로는 에픽텍셜층의 성장전에 웨이퍼의 표면에 있던 염소(CL)를 완전히 제거하여 스테킹(Stacking)결함이 발생되는 것을 미연에 방지할 수 있도록 한 것이다.The present invention relates to an epitaxial layer growth apparatus, and more specifically, it is not known that stacking defects are generated by completely removing chlorine (CL) on the surface of the wafer before growth of the epitaxial layer. To prevent it.
이를 위해, 챔버(1)내에 웨이퍼(2)가 로딩되는 써셉터(Susceptor)(3)와, 상기 웨이퍼를 가열하는 히터(4)를 설치하고 상기 챔버의 일측으로는 가스라인(6)과 가스믹서(7)를 통해 공정가스를 챔버내부로 취입하기 위한 노즐(5)을 설치하도록 된 것에 있어서, 가스라인(6)의 일부를 석영관(6a)으로 형성하고 상기 석영관의 외주면에는 공정가스측으로 자외선을 쪼여주기 위한 자외선 램프(8)를 설치하여서 된 에픽텍셜(Epitaxial)층 성장장비.To this end, a susceptor 3 in which the wafer 2 is loaded in the chamber 1 and a heater 4 for heating the wafer are provided, and the gas line 6 and the gas are provided at one side of the chamber. In order to install a nozzle (5) for blowing the process gas into the chamber through the mixer (7), a part of the gas line (6) is formed of a quartz tube (6a), the process gas on the outer peripheral surface of the quartz tube Epitaxial layer growth equipment by installing an ultraviolet lamp (8) for emitting ultraviolet light to the side.
Description
제1도는 종래의 장비를 나타낸 구성도.1 is a block diagram showing a conventional equipment.
제2도는 어픽텍셜층의 결함을 나타낸 종단면도.2 is a longitudinal cross-sectional view showing a defect in the apographic layer.
제3도는 본 발명의 장비를 나타낸 구성도.3 is a block diagram showing the equipment of the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 챔버 2 : 웨이퍼1 chamber 2 wafer
3 : 써셉터 4 : 히터3: susceptor 4: heater
5 : 노즐 6 : 가스라인5: nozzle 6: gas line
6a : 석영관 7 : 가스믹서6a: quartz tube 7: gas mixer
8 : 자외선램프8: UV lamp
본 발명은 에픽텍셜(Epitaxial)층 성장장비에 관한 것으로서, 좀더 구체적으로는 에픽텍셜층의 성장전에 웨이퍼의 표면에 있던 염소(CL)를 완전히 제거하여 스태킹(Stacking)결함이 발생되는 것을 미연에 방지할 수 있도록 한 것이다.The present invention relates to an epitaxial layer growth device, and more specifically, to completely remove chlorine (CL) on the surface of a wafer before growth of the epitaxial layer to prevent stacking defects from occurring. It is to be done.
첨부도면 제1도는 종래의 장비를 나타낸 구성도로써, 공정이 진행되는 챔버(1) 내에 웨이퍼(2)가 로딩되는 써셉터(Susceptor)(3)가 설치되어 있고 상기 써셉터의 하부에는 공정시 웨이퍼를 가열시키는 히터(4)가 설치되어 있으며 상기 챔버의 일측으로는 가스라인(6)과 가스 믹서(7)를 통해 공정가스(HCl, SiH2Cl2, AsH3, H2)를 챔버내부로 취입하기 위한 노즐(5)이 설치되어 있다.FIG. 1 is a block diagram showing a conventional apparatus, and a susceptor 3 in which a wafer 2 is loaded is installed in a chamber 1 in which a process is performed, and a lower part of the susceptor is used during a process. A heater 4 for heating the wafer is installed, and process gas (HCl, SiH 2 Cl 2 , AsH 3 , H 2 ) is introduced into the chamber through the gas line 6 and the gas mixer 7 on one side of the chamber. The nozzle 5 for blowing in is provided.
따라서, 웨이퍼(2)에 에픽텍셜층을 성장시키기 위해 써셉터(3)의 상면에 웨이퍼(2)를 로딩시킨 다음 가스라인(6)을 통해 챔버의 내부에 H2가스를 취입함과 동시에 히터(4)에 전원을 인가하여 로딩된 웨이퍼(2)를 약 1120℃이상 가열시킨다.Therefore, in order to grow the epitaxial layer on the wafer 2, the wafer 2 is loaded on the upper surface of the susceptor 3, and then the H 2 gas is blown into the inside of the chamber through the gas line 6. Power is applied to (4) to heat the loaded wafer 2 to about 1120 占 폚 or more.
그후, 웨이퍼의 표면에 달라 붙어 있던 불순물(Native oxide, Si paticle 등)을 제거하기 위해 가스 믹서(7)를 통해 가스라인(6)으로 HCl 가스를 취입하여 웨이퍼의 표면(상면)을 식각한다.Thereafter, HCl gas is blown into the gas line 6 through the gas mixer 7 to remove impurities (Native oxide, Si paticle, etc.) stuck to the surface of the wafer, and the surface (top) of the wafer is etched.
상기한 공정으로 웨이퍼의 표면을 식각하고 나면 챔버(1)내의 온도를 1100℃로 낮춘 다음 HCl 가스의 취입을 중단하고, 가스라인(6)을 통해 챔버(1)내에 SiH2Cl2가스 및 AsH3가스를 취입하여 웨이퍼의 표면에 에피텍셜층을 성장시킨다.After etching the surface of the wafer by the above process, the temperature in the chamber 1 is lowered to 1100 ° C., and then the blowing of HCl gas is stopped, and the SiH 2 Cl 2 gas and AsH in the chamber 1 through the gas line 6. 3 The gas is blown to grow an epitaxial layer on the surface of the wafer.
상기 웨이퍼의 표면에 에픽텍셜층이 성장 완료되고 나면 웨이퍼의 온도가 상온에 도달할 때 까지 가스라인(6)을 통해 H2가스를 취입하므로써 공정이 완료된다.After the epitaxial layer is grown on the surface of the wafer, the process is completed by blowing the H 2 gas through the gas line 6 until the temperature of the wafer reaches room temperature.
그러나 이러한 종래의 장비는 HCl 가스를 이용하여 식각할 때 웨이퍼의 표면에 달라 붙어 있던 불순물이 완전히 제거되지 않고 잔류하게 되므로 에픽텍셜층의 성장이 완료되고 난 후 제2도와 같은 결함(Dislocation, projection, pit, spikes 등)을 나타나게 됨은 물론 Cl이 Si-Cl로 잔류하여 스태킹결함을 유발시키게 되는 문제점이 있었다.However, since such impurities do not completely remove the impurities attached to the surface of the wafer when etching using HCl gas, defects such as dislocation, projection, and the like after the growth of the epitaxial layer are completed. pit, spikes, etc.) of course, there was a problem that Cl is left as Si-Cl causing stacking defects.
본 발명은 종래의 이와 같은 문제점을 해결하기 위해 안출한 것으로써, 그 구조를 개선하여 에픽텍셜층의 성장전에 웨이퍼의 표면에 달라 붙어 있던 불순물을 고온에서 완전히 제거시킬 수 있도록 하는데 그 목적이 있다.SUMMARY OF THE INVENTION The present invention has been made to solve such a problem in the related art, and its object is to improve its structure so that impurities that have adhered to the surface of the wafer before growth of the epitaxial layer can be completely removed at a high temperature.
상기 목적을 달성하기 위한 본 발명의 형태에 따르면, 챔버내에 웨이퍼가 로딩되는 써셉터(Susceptor)와, 상기 웨이퍼를 가열하는 히터를 설치하고 상기 챔버의 일측으로 가스라인과 가스 믹서를 통해 공정가스를 챔버내부로 취입하기 위한 노즐을 설치하도록 된 것에 있어서, 가스라인의 일부를 석영관으로 형성하고 상기 석영관의 외주면에는 공정가스측으로 자외선을 쪼여주기 위한 자외선 램프를 설치하여서 된 에픽텍셜(Epitaxial)층 성장장비가 제공된다.According to an aspect of the present invention for achieving the above object, a susceptor in which a wafer is loaded in a chamber and a heater for heating the wafer are installed and a process gas is supplied to a side of the chamber through a gas line and a gas mixer. An epitaxial layer formed by installing a nozzle for blowing into the chamber, wherein a part of the gas line is formed of a quartz tube and an ultraviolet lamp is provided on the outer circumferential surface of the quartz tube to inject ultraviolet rays toward the process gas. Growth equipment is provided.
이하, 본 발명을 일 실시예로 도시한 첨부된 도면 제3도를 참고로 하여 더욱 상세히 설명하면 다음과 같다.Hereinafter, the present invention will be described in more detail with reference to FIG. 3 of the accompanying drawings.
첨부도면 제3도는 본 발명의 장비를 나타낸 구성도로써, 본 발명의 구성중 종래의 구성과 동일한 부분은 그 설명을 생략하고 동일부호를 부여하기로 한다.3 is a block diagram showing the equipment of the present invention, the same parts as those of the conventional structure of the present invention will be omitted and the same reference numerals will be given.
본 발명은 가스라인(6)의 일부가 석영관(6a)으로 되어 있고 상기 석영관의 외주면에는 공정가스측으로 좌외선을 쪼여주기 위한 자외선 램프(8)가 설치되어 구성된다.According to the present invention, a part of the gas line 6 is formed of a quartz tube 6a, and an ultraviolet lamp 8 is provided on the outer circumferential surface of the quartz tube for splitting the left ultraviolet rays toward the process gas.
이와 같이 구성된 본 발명의 작용, 효과를 설명하면 다음과 같다.Referring to the operation and effects of the present invention configured as described above are as follows.
먼저, 웨이퍼(2)에 에픽텍셜층을 성장시키기 위해 써셉터(3)의 상면에 복수매의 웨이퍼(2)를 로딩시킨 다음 히터(4)에 전원을 인가하면 챔버내의 온도가 상승하여 로딩된 웨이퍼(2)를 약 1120℃이상 가열시키게 된다.First, in order to grow an epitaxial layer on the wafer 2, a plurality of wafers 2 are loaded on the upper surface of the susceptor 3, and then power is applied to the heater 4 so that the temperature in the chamber is increased and loaded. The wafer 2 is heated to about 1120 ° C. or more.
이러한 상태에서 가스라인(6)을 통해 챔버(1)의 내부에 H2가스를 취입할 때 상기 가스라인(6)상의 석영관(6a) 외주면에 설치된 자외선램프(8)가 취입되는 H2가스측으로 자외선을 쪼여주면 자외선에 의한 방사효과(irradiation effect)에 의해 상기 H2가스가 안정된 상태로 챔버(1)내에 공급되어 웨이퍼를 식각하게 되므로 웨이퍼의 표면에 달라 붙어 있던 불순물(Native oxide, Si paticle 등)이 완전히 제거한다.In this state via a gas line (6) to blow the H 2 gas to the interior of the chamber (1) H 2 gas that is an ultraviolet lamp 8 provided on the outer peripheral surface of quartz tube (6a) on the gas line (6) accepting When the ultraviolet rays are emitted to the side, the H 2 gas is supplied into the chamber 1 in a stable state by the radiation effect of ultraviolet rays, and the wafer is etched. Remove it completely.
즉, 웨이퍼표면의 Cl기가 완전히 제거된다.That is, the Cl group on the wafer surface is completely removed.
상기한 공정으로 웨이퍼의 표면을 식각하고 나면 챔버(1)내의 온도를 1100℃로 낮춘 다음 HCl 가스의 취입을 중단하고, 가스라인(6)을 통해 챔버(1)내에 SiH2Cl2가스 및 AsH3가스를 취입하여 웨이퍼의 표면에 에피텍셜층을 성장시킨 후 웨이퍼의 온도가 상온에 도달할 때 까지 가스라인(6)을 통해 H2가스를 취입하므로써 공정이 완료되는 것이다.After etching the surface of the wafer by the above process, the temperature in the chamber 1 is lowered to 1100 ° C., and then the blowing of HCl gas is stopped, and the SiH 2 Cl 2 gas and AsH in the chamber 1 through the gas line 6. The process is completed by blowing 3 gases, growing an epitaxial layer on the surface of the wafer, and blowing H 2 gas through the gas line 6 until the temperature of the wafer reaches room temperature.
이상에서와 같이 본 발명은 웨이퍼를 식각하기 위해 공급되는 H2가스측으로 자외선을 쪼여주어 웨이퍼의 표면에 달라 붙은 불순물을 완전히 제거하게 되므로 제2도와 같은 결함(Dislocation, projection, pit, spikes 등)이 발생되는 것을 미연에 방지하게 됨은 물론 Si-Cl이 잔류하지 않게 되므로 스태킹결함이 발생되지 않게 된다.As described above, the present invention removes impurities attached to the surface of the wafer by uvting ultraviolet rays toward the H 2 gas supplied to etch the wafer, so that defects (dislocation, projection, pit, spikes, etc.) of FIG. 2 are eliminated. In addition to preventing the occurrence of the Si-Cl of course, the stacking defects are not generated.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950046846A KR100205441B1 (en) | 1995-12-05 | 1995-12-05 | Growth apparatus of epitaxial layer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950046846A KR100205441B1 (en) | 1995-12-05 | 1995-12-05 | Growth apparatus of epitaxial layer |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100674476B1 (en) | 2005-04-28 | 2007-01-30 | (주)티티에스 | Block heater for gas line |
-
1995
- 1995-12-05 KR KR1019950046846A patent/KR100205441B1/en not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100674476B1 (en) | 2005-04-28 | 2007-01-30 | (주)티티에스 | Block heater for gas line |
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