KR100192477B1 - Structure and manufacturing method for transformer of ic chip - Google Patents
Structure and manufacturing method for transformer of ic chip Download PDFInfo
- Publication number
- KR100192477B1 KR100192477B1 KR1019910023772A KR910023772A KR100192477B1 KR 100192477 B1 KR100192477 B1 KR 100192477B1 KR 1019910023772 A KR1019910023772 A KR 1019910023772A KR 910023772 A KR910023772 A KR 910023772A KR 100192477 B1 KR100192477 B1 KR 100192477B1
- Authority
- KR
- South Korea
- Prior art keywords
- chip
- coil
- transformer
- embedded
- present
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F5/00—Coils
Abstract
본 발명은 집적도를 높이고 시스템의 크기를 줄이기에 적당하도록 한 IC칩에 내장된 트랜스의 구조에 관한 것으로 종래에는 코일의 회전수와 코어의 크기 때문에 그 부피를 줄이는데 한계가 있어 본 발명에서는 IC칩내에 ㅁ자형으로 자성체(5)를 내장시키고 상기 자성체(5)의 좌우측 주위에 코일용 A1(7)을 비어콘택(6) 사이에서 왕복하도록 감으며 2차측 코일(7)에 다수의 트랜지스터(Q1-Q4)를 연결하여 문제점을 개선한 것이다.The present invention relates to a structure of a transformer embedded in an IC chip suitable for increasing the density and reducing the size of a system. Conventionally, the present invention has a limitation in reducing the volume due to the number of turns of the coil and the size of the core. ㅁ The magnetic body (5) is embedded in the shape and wound around the left and right sides of the magnetic material (5) coil A1 (7) to reciprocate between the via contact (6) and a plurality of transistors (Q 1 ) in the secondary coil (7) -Q 4 ) to improve the problem.
Description
제1도는 본 발명 IC칩에 내장된 변압기의 평면도.1 is a plan view of a transformer built in the IC chip of the present invention.
제2도는 본 발명의 IC칩에 내장된 변압기의 종단면도.2 is a longitudinal sectional view of a transformer embedded in an IC chip of the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 기판 2 : 산화막1 substrate 2 oxide film
3, 7, 8, 9 : A1 4 : 절연막3, 7, 8, 9: A1 4: insulating film
5 : 자성체 6 : 비어콘택5: magnetic material 6: beer contact
본 발명은 IC칩에 내장된 변압기(Transformer)에 관한 것으로 특히 집적도를 높이고 시스템의 크기를 줄이기에 적당하도록 한 IC칩에 내장된 변압기의 구조 및 제조방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a transformer embedded in an IC chip, and more particularly, to a structure and a manufacturing method of a transformer embedded in an IC chip suitable for increasing the integration density and reducing the size of a system.
종래의 변압기는 코어에 1차 코일과 2차 코일을 감아 제조되며 1차 코일에 인가된 전압과 회전수 그리고 2차 코일의 회전수에 의해 2차 코일에 유도된 전압이 결정된다.Conventional transformers are manufactured by winding a primary coil and a secondary coil around a core, and the voltage induced in the secondary coil is determined by the voltage and the number of revolutions applied to the primary coil and the number of revolutions of the secondary coil.
그러나, 상기와 같은 종래 기술에 있어서는 코일의 회전수와 코어의 크기 때문에 그 부피를 줄이는데 한계가 있다.However, in the prior art as described above, there is a limit in reducing the volume due to the rotational speed of the coil and the size of the core.
본 발명은 이와 같은 종래의 결점을 해결하기 위한 것으로 트랜스를 IC칩내에 내장시켜 시스템의 부피를 줄일 수 있게 한 IC칩에 내장된 변압기의 구조 및 제조방법을 제공하는데 그 목적이 있다.Disclosure of Invention The present invention has been made to solve the above-mentioned shortcomings, and an object of the present invention is to provide a structure and a manufacturing method of a transformer embedded in an IC chip that can reduce the volume of a system by embedding the transformer in an IC chip.
상기의 목적을 달성하기 위한 본 발명의 IC칩에 내장된 변압기는 IC칩내에 ㅁ자형으로 자성체(5)를 내장시키고 상기 자성체(5)의 좌우측 주위에 코일용 A1(7)을 비어콘택(6) 사이에서 왕복하도록 감으며 2차측 코일(7)에 다수의 트랜지스터(Q1-Q4)를 연결하여서 이루어진다.The transformer embedded in the IC chip of the present invention for achieving the above object has a magnetic body 5 embedded in the IC chip in a K-shaped shape, and the coil A1 7 is wound around the left and right sides of the magnetic body 5. ) By winding a plurality of transistors (Q 1 -Q 4 ) to the secondary coil (7) while winding to reciprocate.
이하에서 이와 같은 목적을 달성하기 위한 본 발명의 실시예를 첨부된 도면 제1도와 제2도에 의하여 상세히 설명하면 다음과 같다.Hereinafter, an embodiment of the present invention for achieving such an object will be described in detail with reference to FIGS. 1 and 2 of the accompanying drawings.
먼저 제2도는 본 발명의 변압기가 내장된 IC칩의 단면도로 기판(1) 위에 산화막(2)을 형성하고 산화막(2) 위에 A1(3)을 증착한 후 사진식각 공정에 의해 한정(Define)한다.2 is a cross-sectional view of the IC chip in which the transformer of the present invention is embedded. do.
그리고 전표면에 절연막(4)을 증착하고 자성체(5)를 스퍼터링에 의해 ㅁ자형으로 입힌 다음 다시 사진식각 공정에 의해 코어를 한정한다.Then, the insulating film 4 is deposited on the entire surface, the magnetic body 5 is coated in a K-shaped by sputtering, and then the core is defined by a photolithography process.
다음에 다시 절연막을 입히고 비어콘택(6)을 형성한 다음 코일용 A1(7)을 스퍼터링 또는 CVD로 입혀 사진식각 공정에 의해 선택적 식각한다.Next, the insulating film is coated, the via contact 6 is formed, and then the coil A1 7 is sputtered or CVD and selectively etched by a photolithography process.
이때 2차 코일(8)(9) 사이에 트랜지스터(Q1-Q4)를 연결하여 변압기를 완성한다.At this time, the transistors Q 1 to Q 4 are connected between the secondary coils 8 and 9 to complete the transformer.
이와 같은 본 발명은 A1(7)의 1차 코일쪽으로 부터 인가된 AC 전압이 트랜지스터(Q1-Q4)중 선택적으로 온된 출력단자의 한 단자로 출력되어 출력전압이 결정된다.In the present invention as described above, the AC voltage applied from the primary coil side of A1 (7) is output to one terminal of the output terminals selectively turned on among the transistors Q 1 -Q 4 to determine the output voltage.
이와 같은 본 발명은 변압기를 IC칩 내부에 내장시켜 시스템의 부피를 대폭 줄일 수 있으며 이에 따른 집적도를 향상시킬 수 있는 효과가 있다.As such, the present invention can significantly reduce the volume of the system by embedding the transformer inside the IC chip, thereby improving the degree of integration.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019910023772A KR100192477B1 (en) | 1991-12-21 | 1991-12-21 | Structure and manufacturing method for transformer of ic chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019910023772A KR100192477B1 (en) | 1991-12-21 | 1991-12-21 | Structure and manufacturing method for transformer of ic chip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR930014635A KR930014635A (en) | 1993-07-23 |
| KR100192477B1 true KR100192477B1 (en) | 1999-06-15 |
Family
ID=19325460
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019910023772A KR100192477B1 (en) | 1991-12-21 | 1991-12-21 | Structure and manufacturing method for transformer of ic chip |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR100192477B1 (en) |
-
1991
- 1991-12-21 KR KR1019910023772A patent/KR100192477B1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR930014635A (en) | 1993-07-23 |
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