KR100189595B1 - 스프링 접촉 탐침을 사용한 저온에서의 반도체 파라메터 측정 시스템 및 방법 - Google Patents

스프링 접촉 탐침을 사용한 저온에서의 반도체 파라메터 측정 시스템 및 방법 Download PDF

Info

Publication number
KR100189595B1
KR100189595B1 KR1019910013775A KR910013775A KR100189595B1 KR 100189595 B1 KR100189595 B1 KR 100189595B1 KR 1019910013775 A KR1019910013775 A KR 1019910013775A KR 910013775 A KR910013775 A KR 910013775A KR 100189595 B1 KR100189595 B1 KR 100189595B1
Authority
KR
South Korea
Prior art keywords
semiconductor material
chamber
surface portion
under test
specimen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019910013775A
Other languages
English (en)
Korean (ko)
Other versions
KR920005292A (ko
Inventor
첸멘치
Original Assignee
스콧이. 랜시크
레이데온 티아이 시스템즈, 인크.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 스콧이. 랜시크, 레이데온 티아이 시스템즈, 인크. filed Critical 스콧이. 랜시크
Publication of KR920005292A publication Critical patent/KR920005292A/ko
Application granted granted Critical
Publication of KR100189595B1 publication Critical patent/KR100189595B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/286—External aspects, e.g. related to chambers, contacting devices or handlers
    • G01R31/2863—Contacting devices, e.g. sockets, burn-in boards or mounting fixtures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/286—External aspects, e.g. related to chambers, contacting devices or handlers
    • G01R31/2862—Chambers or ovens; Tanks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Environmental & Geological Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Measuring Leads Or Probes (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Testing Resistance To Weather, Investigating Materials By Mechanical Methods (AREA)
  • Sampling And Sample Adjustment (AREA)
KR1019910013775A 1990-08-10 1991-08-09 스프링 접촉 탐침을 사용한 저온에서의 반도체 파라메터 측정 시스템 및 방법 Expired - Fee Related KR100189595B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/565,581 US5309088A (en) 1990-08-10 1990-08-10 Measurement of semiconductor parameters at cryogenic temperatures using a spring contact probe
US565,581 1990-08-10

Publications (2)

Publication Number Publication Date
KR920005292A KR920005292A (ko) 1992-03-28
KR100189595B1 true KR100189595B1 (ko) 1999-06-01

Family

ID=24259258

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910013775A Expired - Fee Related KR100189595B1 (ko) 1990-08-10 1991-08-09 스프링 접촉 탐침을 사용한 저온에서의 반도체 파라메터 측정 시스템 및 방법

Country Status (6)

Country Link
US (2) US5309088A (enExample)
EP (1) EP0470521B1 (enExample)
JP (1) JPH0697246A (enExample)
KR (1) KR100189595B1 (enExample)
DE (1) DE69128052T2 (enExample)
TW (1) TW212828B (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6313649B2 (en) 1992-06-11 2001-11-06 Cascade Microtech, Inc. Wafer probe station having environment control enclosure
US6380751B2 (en) * 1992-06-11 2002-04-30 Cascade Microtech, Inc. Wafer probe station having environment control enclosure
US6002263A (en) 1997-06-06 1999-12-14 Cascade Microtech, Inc. Probe station having inner and outer shielding
US6275060B1 (en) 1997-09-02 2001-08-14 Midwest Research Institute Apparatus and method for measuring minority carrier lifetimes in semiconductor materials
US5929652A (en) * 1997-09-02 1999-07-27 Midwest Research Institute Apparatus for measuring minority carrier lifetimes in semiconductor materials
US6700397B2 (en) 2000-07-13 2004-03-02 The Micromanipulator Company, Inc. Triaxial probe assembly
US6424141B1 (en) 2000-07-13 2002-07-23 The Micromanipulator Company, Inc. Wafer probe station
US6914423B2 (en) 2000-09-05 2005-07-05 Cascade Microtech, Inc. Probe station
US6711961B2 (en) 2000-10-24 2004-03-30 Air Liquide America Corporation Methods and apparatus for recycling cryogenic liquid or gas from test chambers
US6836135B2 (en) 2001-08-31 2004-12-28 Cascade Microtech, Inc. Optical testing device
US7250626B2 (en) 2003-10-22 2007-07-31 Cascade Microtech, Inc. Probe testing structure
KR20050122972A (ko) * 2004-06-26 2005-12-29 삼성전자주식회사 유기 발광소자 분석방법
EP2159580B1 (en) * 2008-08-26 2015-10-07 Lake Shore Cryotronics, Inc. Probe tip
US8319503B2 (en) 2008-11-24 2012-11-27 Cascade Microtech, Inc. Test apparatus for measuring a characteristic of a device under test
US10720372B2 (en) 2018-10-26 2020-07-21 Microsoft Technology Licensing, Llc Conduction cooling for circuit boards
EP4439101A1 (en) * 2023-03-31 2024-10-02 kiutra GmbH Apparatus for testing and/or operating electronic devices

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3710251A (en) * 1971-04-07 1973-01-09 Collins Radio Co Microelectric heat exchanger pedestal
JPS5492065A (en) * 1977-12-29 1979-07-20 Fuji Electric Co Ltd Measuring method for manufacturing process evaluation of semiconductor device
US4167791A (en) * 1978-01-25 1979-09-11 Banavar Jayanth R Non-volatile information storage arrays of cryogenic pin diodes
US4177093A (en) * 1978-06-27 1979-12-04 Exxon Research & Engineering Co. Method of fabricating conducting oxide-silicon solar cells utilizing electron beam sublimation and deposition of the oxide
USRE32457E (en) * 1981-09-30 1987-07-07 Rca Corporation Scanning capacitance microscope
JP2690908B2 (ja) * 1987-09-25 1997-12-17 株式会社日立製作所 表面計測装置
JPH02205046A (ja) * 1989-02-03 1990-08-14 Hitachi Ltd 半導体表面計則方法およびその装置
US5103183A (en) * 1990-01-26 1992-04-07 Rockwell International Corporation Method of profiling compensator concentration in semiconductors
US5023561A (en) * 1990-05-04 1991-06-11 Solid State Measurements, Inc. Apparatus and method for non-invasive measurement of electrical properties of a dielectric layer in a semiconductor wafer

Also Published As

Publication number Publication date
US5459408A (en) 1995-10-17
US5309088A (en) 1994-05-03
KR920005292A (ko) 1992-03-28
EP0470521A3 (enExample) 1994-03-30
DE69128052T2 (de) 1998-05-14
JPH0697246A (ja) 1994-04-08
TW212828B (enExample) 1993-09-11
EP0470521B1 (en) 1997-10-29
DE69128052D1 (de) 1997-12-04
EP0470521A2 (en) 1992-02-12

Similar Documents

Publication Publication Date Title
KR100189595B1 (ko) 스프링 접촉 탐침을 사용한 저온에서의 반도체 파라메터 측정 시스템 및 방법
US6004029A (en) Method for automated calibration of temperature sensors in rapid thermal processing equipment
KR100315605B1 (ko) 고양된 온도에서의 반도체 소자의 급속테스팅장치및방법
US5023561A (en) Apparatus and method for non-invasive measurement of electrical properties of a dielectric layer in a semiconductor wafer
EP2159580B1 (en) Probe tip
JP7168890B2 (ja) プローバ
KR20020008066A (ko) 온도 제어 장치
JP7273656B2 (ja) プローバおよびプローブカードのプリクール方法
US20150071327A1 (en) Gas coupled probe for substrate temperature measurement
KR101724954B1 (ko) 마이크로 진공 프로브 시스템
US5585736A (en) Contact probe utilizing conductive meltable probing material
JP3058549B2 (ja) イーシーアール装置
CN216160284U (zh) 冷冻芯片、样品台组件、冷冻系统及样品测试系统
KR100479846B1 (ko) 탐침형 깊은 준위 과도 전기 용량 분광기
CN120870624B (zh) 一种变温磁场探针测试平台及操作方法
EP1796157A1 (en) Semiconductor wafer evaluating method and semiconductor wafer evaluating apparatus
Schwarzenbach et al. Systematic evaluation of SOI buried oxide reliability for partially depleted and fully depleted applications
Shevtsov et al. An ultrahigh-vacuum multifunctional apparatus for synthesis and in situ investigation of low-dimensional structures by spectral magnetoellipsometry in the temperature range of 85–900 K
US7063992B2 (en) Semiconductor substrate surface preparation using high temperature convection heating
US12287279B2 (en) Semiconductor laser inspection apparatus
JPH0236341A (ja) 低温測定用プローブボード
JPH0581175B2 (enExample)
US20230273241A1 (en) Semiconductor laser inspection apparatus
JP2000252331A (ja) 電気特性評価装置
JPS63260146A (ja) 半導体ウエハ測定装置

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

N231 Notification of change of applicant
PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20020119

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20020119

R17-X000 Change to representative recorded

St.27 status event code: A-5-5-R10-R17-oth-X000