KR0181909B1 - Semiconductor wafer diagnosis equipment - Google Patents
Semiconductor wafer diagnosis equipment Download PDFInfo
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- KR0181909B1 KR0181909B1 KR1019960022653A KR19960022653A KR0181909B1 KR 0181909 B1 KR0181909 B1 KR 0181909B1 KR 1019960022653 A KR1019960022653 A KR 1019960022653A KR 19960022653 A KR19960022653 A KR 19960022653A KR 0181909 B1 KR0181909 B1 KR 0181909B1
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- load lock
- wafer
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
- 238000003745 diagnosis Methods 0.000 title 1
- 239000002245 particle Substances 0.000 claims abstract description 11
- 238000005086 pumping Methods 0.000 claims abstract description 9
- 235000012431 wafers Nutrition 0.000 claims description 27
- 238000000034 method Methods 0.000 abstract description 7
- 238000010884 ion-beam technique Methods 0.000 abstract description 3
- 150000004767 nitrides Chemical class 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000003801 milling Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
- G01N33/0095—Semiconductive materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
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Abstract
반도체 소자 진행공정이 진행되어 웨이퍼 상에 적층된 각 막질의 파티클(Particle) 존재여부를 분석하는 포커스 이온 빔(Focus ion beam)설비의 구조를 개선하는 반도체 웨이퍼 분석설비에 관한 것이다.The present invention relates to a semiconductor wafer analyzing apparatus that improves the structure of a focus ion beam facility for analyzing the presence or absence of particles of each film quality deposited on a wafer as a semiconductor device advancing process proceeds.
본 발명은, 로드록챔버에서 대기하는 복수의 막질이 적층된 웨이퍼가 워크챔버로 이동하여 각 막질의 파티클 존재여부를 분석하는 반도체 웨이퍼 분석설비에 있어서, 상기 로드록챔버 및 상기 워크챔버와 드라이 펌프가 각각 연결되어 상기 드라이 펌프의 펌핑동작에 의해서 상기 로드록챔버 및 상기 워크챔버의 진공상태가 제어되도록 구성됨을 특징으로 한다.The present invention relates to a semiconductor wafer analysis equipment for analyzing the presence or absence of particles of each film quality by moving a wafer having a plurality of films stacked in a load lock chamber to a work chamber, And the vacuum state of the load lock chamber and the work chamber is controlled by the pumping operation of the dry pump.
따라서, 로드록챔버와 워크챔버의 진공상태를 형성하는 진공펌프가 드라이 펌프로 단일화할 수 있어서 진공펌프가 설비 내에서 차지하는 면적을 감소시킬 수 있는 효과가 있다.Therefore, the vacuum pump that forms the vacuum state of the load lock chamber and the work chamber can be unified with the dry pump, thereby reducing the area occupied by the vacuum pump in the facility.
Description
제1도는 종래의 반도체 웨이퍼 분석설비를 설명하기 위한 개략적인 구성도이다.FIG. 1 is a schematic diagram for explaining a conventional semiconductor wafer analysis equipment.
제2도는 본 발명에 따른 반도체 웨이퍼 분석설비의 일 실시예를 설명하기 위한 구성도이다.FIG. 2 is a schematic diagram for explaining an embodiment of a semiconductor wafer analysis equipment according to the present invention.
* 도면의 주요부분에 대한 부호의 설명DESCRIPTION OF THE REFERENCE NUMERALS
10 : 러프펌프 11, 14, 22, 26 : 밸브10: rough pump 11, 14, 22, 26: valve
12, 24 : 로드록챔버 16 : 포어펌프12, 24: load lock chamber 16: forepump
18, 28 : 워크챔버 20 : 드라이 펌프18, 28: work chamber 20: dry pump
본 발명은 반도체 웨이퍼 분석설비에 관한 것으로서, 보다 상세하게는 반도체 소자 진행공정이 진행되어 웨이퍼 상에 적층된 각 막질의 파티클(Particle) 존재여부를 분석하는 포커스 이온 빔(Focus ion beam)설비의 구조를 개선하는 반도체 웨이퍼 분석설비에 관한 것이다.The present invention relates to a semiconductor wafer analyzing apparatus, and more particularly, to a structure of a focus ion beam facility for analyzing the presence or absence of particles of each film deposited on a wafer, To a semiconductor wafer analysis facility.
최근에 반도체 소자가 더욱 고집적화되어 미세한 파티클에 의해서도 소자의 불량이 발생함으로 파티클에 영향을 받지 않고 반도체 소자 제조공정이 진행되도록 최선을 다하고 있다.In recent years, semiconductor devices have become more highly integrated, resulting in defective devices even with fine particles, so that the semiconductor device manufacturing process is carried out without being affected by particles.
또한, 반도체 소자 제조공정이 완료되어 웨이퍼 상에 산화막, 질화막, 게이트, S-폴리, 등의 막질이 적층된 웨이퍼도 포커스 이온 빔(Focus ion beam : 이하 FIB 이라 함)설비를 이용하여 막질에 포함된 파티클을 분석하여 파티클이 존재할 경우에는 파티클이 존재하는 막질이 형성된 설비의 이상여부를 검사하고 있다.In addition, a wafer in which a semiconductor device manufacturing process is completed and a film quality of an oxide film, a nitride film, a gate, and an S-poly film is laminated on a wafer is also included in a film quality by using a focus ion beam (hereinafter referred to as FIB) When the particle is present, it is inspected whether or not there is an abnormality in the film-forming equipment in which the particle exists.
제1도는 종래의 반도체 웨이퍼 분석설비 즉 FIB설비를 설명하기 위한 개략적인 구성도이다.FIG. 1 is a schematic diagram for explaining a conventional semiconductor wafer analyzing apparatus, that is, an FIB apparatus.
제1도를 참조하면, 러프펌프(Rough pump : 10)와 밸브(11) 및 로드록챔버(Lodlock chamber : 12)가 순차적으로 연결되어 밸브(11)가 열리면, 러프펌프(10)의 펌핑작용에 의해서 복수의 막질이 적층된 웨이퍼가 투입된 로드록챔버(12)의 진공상태를 10-3Torr 정도로 형성하도록 되어 있다.Referring to FIG. 1, when the valve 11 is opened by sequentially connecting the rough pump 10, the valve 11 and the load lock chamber 12, the pumping action of the rough pump 10 Lock chamber 12 into which a wafer having a plurality of film layers stacked therein is formed at a vacuum of about 10 -3 Torr.
그리고, 상기 로드록챔버(2)와 분석공정이 진행되는 워크챔버(18) 사이에 대용량의 밸브(14)가 위치하여 로드록챔버(12)의 진공상태가 10-3Torr 정도로 되면 열리도록 되어 있다.A valve 14 of a large capacity is positioned between the load lock chamber 2 and the work chamber 18 where the analysis process is carried out so that the valve 14 is opened when the vacuum state of the load lock chamber 12 is about 10 -3 Torr have.
밸브(14)가 열리면, 로드록챔버(12)의 웨이퍼는 대용량의 밸브(14)를 통해서 분석공정이 진행되는 워크챔버(18)로 이동하고 이 상태에서 워크챔버(18)와 연결된 포어펌프(16)의 펌핑동작에 의해서 5×10-6Torr 정도의 진공상태를 형성하여 분석공정이 진행되도록 되어 있다.When the valve 14 is opened, the wafer in the load lock chamber 12 is transferred through the large-capacity valve 14 to the work chamber 18 where the analysis process proceeds, and in this state, 16) is pumped to form a vacuum state of about 5 x 10 -6 Torr so that the analysis process can proceed.
따라서, 웨이퍼 상에 산화막, 질화막, 게이트, S-폴리, 금속막 등이 적층된 웨이퍼가 로드록챔버(12)에 투입되면, 밸브(11)는 열리고 러프펌프(10)는 펌핑동작을 수행한다.Therefore, when a wafer in which an oxide film, a nitride film, a gate, an S-poly film, a metal film, and the like are stacked on the wafer is loaded into the load lock chamber 12, the valve 11 is opened and the rough pump 10 performs a pumping operation .
러프펌프(10)의 펌핑동작에 의해서 로드록챔버(12)의 진공상태가 10-3Torr 정도로 형성되면 대용량의 밸브(14)가 열리고 복수의 막질이 적층된 웨이퍼는 밸브(14)를 통과하여 워크챔버(18)로 이동한다.When the vacuum state of the load lock chamber 12 is formed at about 10 -3 Torr by the pumping operation of the rough pump 10, the large capacity valve 14 is opened and the wafer having the plurality of laminated films passes through the valve 14 And moves to the work chamber 18.
이 상태에서 포어펌프(16)의 펌핑동작에 의해서 워크챔버(18)의 진공상태는 10-5Torr 정도의 초진공상태를 형성하여 복수의 막질이 형성된 웨이퍼의 각 막질에 포함된 파티클의 존재여부를 검사하는 분석공정이 진행된다.In this state, the vacuum state of the work chamber 18 by the pumping operation of the forepump 16 forms an ultra-vacuum state of about 10 -5 Torr, so that the presence or absence of particles contained in each film quality of the wafer Is carried out.
분석공정은 웨이퍼 상에 산화막, 질화막, 게이트, 금속막 등이 적층된 웨이퍼 상에 아이온 소스(Ion source)를 가하는 밀링(Milling)작업을 수행함으로 시작된다.The analysis process starts by performing a milling operation of applying an ion source onto a wafer on which an oxide film, a nitride film, a gate, a metal film, and the like are stacked.
밀링작업에 의해서 웨이퍼 상에 적층된 각 막질은 식각되고 식각된 각 막질을 분석함으로서 파티클의 존재여부를 분석할 수 있다.Each film deposited on the wafer by milling can be analyzed for the presence of particles by analyzing each etched and etched film.
그러나, 로드록챔버와 워크챔버의 진공상태를 형성하는 진공펌프가 러프펌프와 포어펌프로 이분화되어 진행됨으로 인해서 설비의 단순화를 이루는데 문제점으로 작용하고 있으며, 각 진공펌프가 차지하는 면적도 설비 내부에 마련해야 하는 문제점이 있었다.However, since the vacuum pump that forms the vacuum state of the load lock chamber and the work chamber is divided into the rough pump and the forepart, the vacuum pump has a problem in simplifying the facility, As shown in Fig.
본 발명의 목적은, 복수의 막질이 적층된 웨이퍼의 각 막질에 포함된 파티클의 존재여부를 검사하는 FIB설비의 구조를 단순화하는 반도체 웨이퍼 분석설비를 제공하는 데 있다.It is an object of the present invention to provide a semiconductor wafer analysis equipment that simplifies the structure of an FIB facility for inspecting the presence or absence of particles included in each film quality of a wafer having a plurality of film layers stacked thereon.
상기 목적을 달성하기 위한 본 발명에 따른 반도체 분석설비는, 로드록챔버에서 대기하는 복수의 막질이 적층된 웨이퍼가 워크챔버로 이동하여 각 막질의 파티클 존재여부를 분석하는 반도체 웨이퍼 분석설비에 있어서, 상기 로드록챔버 및 상기 워크챔버와 드라이 펌프가 각각 연결되어 상기 드라이 펌프의 펌핑동작에 의해서 상기 로드록챔버 및 상기 워크챔버의 진공상태가 제어되도록 구성됨을 특징으로 한다.According to an aspect of the present invention, there is provided a semiconductor wafer analyzing apparatus for analyzing whether a wafer having a plurality of film layers stacked thereon in a load lock chamber moves to a work chamber, The load lock chamber, the work chamber, and the dry pump are connected to each other to control the vacuum state of the load lock chamber and the work chamber by the pumping operation of the dry pump.
이하, 본 발명의 구체적인 실시예를 첨부한 도면을 참조하여 상세히 설명한다.Hereinafter, specific embodiments of the present invention will be described in detail with reference to the accompanying drawings.
제2도는 본 발명에 따른 반도체 웨이퍼 분석설비의 일 실시예를 설명하기 위한 구성도이다.FIG. 2 is a schematic diagram for explaining an embodiment of a semiconductor wafer analysis equipment according to the present invention.
제2도를 참조하면, 산화막, 질화막, 게이트, S-폴리, 금속막, 등의 복수의 막질이 적층된 웨이퍼가 분석공정 진행을 위하여 대기하는 로드록챔버(24)와 대용량의 밸브(26) 그리고 아이온 소스를 이용한 분석공정이 진행되는 워크챔버(28)가 순차적으로 연결되어 있다.2, a wafer in which a plurality of films such as an oxide film, a nitride film, a gate, an S-poly film, and a metal film is stacked is provided with a load lock chamber 24 waiting for the analysis process, And a work chamber 28 in which an analysis process using an ion source is performed are sequentially connected.
또한, 드라이 펌프(20)와 밸브(22) 및 로드록챔버(24)와 순차적으로 연결되고, 드라이 펌프(20)와 워크챔버(28)가 직접 연결되어 드라이 펌프(20)의 펌핑동작에 의해서 로드록챔버(24) 및 워크챔버(28)의 진공상태가 5×10-6Torr 정도로 함께 제어되도록 되어 있다.The dry pump 20 and the load lock chamber 24 are sequentially connected to the dry pump 20 and the load lock chamber 24. The dry pump 20 and the work chamber 28 are directly connected to each other by the pumping operation of the dry pump 20 And the vacuum state of the load lock chamber 24 and the work chamber 28 is controlled to be about 5 × 10 -6 Torr.
따라서, 산화막, 질화막, 게이트, 금속막, S-폴리, P-폴리 등이 적층된 웨이퍼가 로드록챔버(24)에 투입되어 대기시간을 가지면 밸브(22)가 열리고 드라이 펌프(20)는 펌핑동작을 수행한다.Therefore, when the wafer in which the oxide film, the nitride film, the gate, the metal film, the S-poly, the P-poly or the like is stacked in the load lock chamber 24 and has a waiting time, the valve 22 is opened and the dry pump 20 is pumped And performs an operation.
드라이 펌프(20)의 펌핑동작에 의해서 로드록챔버(24) 및 워크챔버(28)의 진공상태가 5×10-6Torr 정도로 형성된다.The vacuum state of the load lock chamber 24 and the work chamber 28 is formed at about 5 × 10 -6 Torr by the pumping operation of the dry pump 20.
이어서, 대용량의 밸브(26)가 열리면, 복수의 막질이 형성된 웨이퍼가 밸브(26)를 통과하여 워크챔버(28)에 투입되어 아이온 소스를 이용하여 웨이퍼 상에 적층된 막질을 식각하는 밀링작업이 진행된다.Subsequently, when a large-capacity valve 26 is opened, a plurality of film-formed wafers pass through the valve 26 to the work chamber 28, and a milling operation is performed to etch the deposited film on the wafer using an ion source It proceeds.
밀링작업이 수행된 후 식각된 각 막질을 분석함으로서 각 막질에 포함된 파티클의 존재여부를 확인할 수 있다.After the milling operation is performed, each etched film quality can be analyzed to confirm the presence of particles contained in each film quality.
본 발명에 따라서, 로드록챔버와 워크챔버의 진공상태를 형성하는 진공펌프가 드라이 펌프로 단일화할 수 있어서 진공펌프가 설비 내에서 차지하는 면적을 감소시킬 수 있는 효과가 있다.According to the present invention, the vacuum pump that forms the vacuum state of the load lock chamber and the work chamber can be unified with the dry pump, thereby reducing the area occupied by the vacuum pump in the apparatus.
이상에서 본 발명은 기재된 구체예에 대해서만 상세히 설명되었지만 본 발명의 기술사상 범위 내에서 다양한 변형 및 수정이 가능함은 당업자에게 있어서 명백한 것이며, 이러한 변형 및 수정이 첨부된 특허청구범위에 속함은 당연하다.While the invention has been shown and described with reference to certain preferred embodiments thereof, it will be understood by those skilled in the art that various changes and modifications may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960022653A KR0181909B1 (en) | 1996-06-20 | 1996-06-20 | Semiconductor wafer diagnosis equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960022653A KR0181909B1 (en) | 1996-06-20 | 1996-06-20 | Semiconductor wafer diagnosis equipment |
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| KR980005955A KR980005955A (en) | 1998-03-30 |
| KR0181909B1 true KR0181909B1 (en) | 1999-04-15 |
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| KR1019960022653A KR0181909B1 (en) | 1996-06-20 | 1996-06-20 | Semiconductor wafer diagnosis equipment |
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1996
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