KR0179151B1 - Semiconductor memory device - Google Patents
Semiconductor memory device Download PDFInfo
- Publication number
- KR0179151B1 KR0179151B1 KR1019950043914A KR19950043914A KR0179151B1 KR 0179151 B1 KR0179151 B1 KR 0179151B1 KR 1019950043914 A KR1019950043914 A KR 1019950043914A KR 19950043914 A KR19950043914 A KR 19950043914A KR 0179151 B1 KR0179151 B1 KR 0179151B1
- Authority
- KR
- South Korea
- Prior art keywords
- memory device
- semiconductor memory
- semiconductor
- memory
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/10—Decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/025—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in signal lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950043914A KR0179151B1 (en) | 1995-11-27 | 1995-11-27 | Semiconductor memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950043914A KR0179151B1 (en) | 1995-11-27 | 1995-11-27 | Semiconductor memory device |
Publications (2)
Publication Number | Publication Date |
---|---|
KR970029825A KR970029825A (en) | 1997-06-26 |
KR0179151B1 true KR0179151B1 (en) | 1999-04-15 |
Family
ID=19435845
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950043914A KR0179151B1 (en) | 1995-11-27 | 1995-11-27 | Semiconductor memory device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR0179151B1 (en) |
-
1995
- 1995-11-27 KR KR1019950043914A patent/KR0179151B1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR970029825A (en) | 1997-06-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20051021 Year of fee payment: 8 |
|
LAPS | Lapse due to unpaid annual fee |