KR0165483B1 - Method for forming isolation on a semiconductor device - Google Patents
Method for forming isolation on a semiconductor device Download PDFInfo
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- KR0165483B1 KR0165483B1 KR1019950044268A KR19950044268A KR0165483B1 KR 0165483 B1 KR0165483 B1 KR 0165483B1 KR 1019950044268 A KR1019950044268 A KR 1019950044268A KR 19950044268 A KR19950044268 A KR 19950044268A KR 0165483 B1 KR0165483 B1 KR 0165483B1
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- 238000000034 method Methods 0.000 title claims abstract description 37
- 239000004065 semiconductor Substances 0.000 title claims abstract description 34
- 238000002955 isolation Methods 0.000 title claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 37
- -1 oxy nitride Chemical class 0.000 claims abstract description 28
- 239000003963 antioxidant agent Substances 0.000 claims abstract description 23
- 230000003078 antioxidant effect Effects 0.000 claims abstract description 23
- 150000004767 nitrides Chemical class 0.000 claims abstract description 15
- 238000001039 wet etching Methods 0.000 claims abstract description 9
- 230000001590 oxidative effect Effects 0.000 claims abstract description 6
- 230000003064 anti-oxidating effect Effects 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 abstract description 10
- 239000000463 material Substances 0.000 abstract description 7
- 210000003323 beak Anatomy 0.000 abstract description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 235000016068 Berberis vulgaris Nutrition 0.000 description 1
- 241000335053 Beta vulgaris Species 0.000 description 1
- 241000293849 Cordylanthus Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
Abstract
반도체소자의 소자분리막 형성방법에 대해 기재되어 있다. 이는, 반도체기판 전면에 완충용 산화막을 형성하는 단계, 완충용 산화막 상에 산화방지막을 형성하는 단계, 산화방지막을 패터닝함으로써 필드산화막이 형성될 영역의 완충용 산화막을 노출시키는 모양의 산화방지막 패턴을 형성하는 단계, 노출된 완충용 산화막을 습식식각함으로써 산화방지막 패턴과 반도체기판 사이에 언더컷을 형성하는 단계, 결과물 기판 전면에 옥시 나이트라이드막을 형성하는 단계, 언더컷에 형성되어 있는 것을 제외한 모든 옥시 나이트라이드막을 제거하는 단계 및 결과물 기판을 산화분위기에 노출시킴으로써 필드산화막을 형성하는 단계를 포함하는 것을 특징으로 한다. 따라서, 활성영역을 파고드는 형태로 발생하던 버즈비크를 옥시 나이트라이드막으로 방지하고, 질화막과의 식각선택성이 좋은 물질, 즉 완충용 산화막을 이용하여 반도체기판의 표면이 손상되는 것을 방지하였다.A method of forming a device isolation film of a semiconductor device is described. This method is characterized in that an oxide film pattern is formed in which a buffer oxide film is formed on the entire surface of the semiconductor substrate, an antioxidant film is formed on the buffer oxide film, and the patterned antioxidant film is exposed to expose the buffer oxide film in the region where the field oxide film is to be formed. Forming an undercut between the antioxidant pattern and the semiconductor substrate by wet etching the exposed buffer oxide film, forming an oxy nitride film on the entire surface of the resultant substrate, all oxy nitride except those formed on the undercut Removing the film and forming the field oxide film by exposing the resulting substrate to an oxidizing atmosphere. As a result, it was possible to prevent the Burj beak generated in the form of digging into the active region with an oxynitride film and to damage the surface of the semiconductor substrate by using a material having a good etching selectivity with the nitride film, that is, a buffer oxide film.
Description
제1a도 내지 제1d도는 종래의 소자분리막 형성방법을 설명하기 위해 도시한 단면도들이다.1A to 1D are cross-sectional views illustrating a conventional method of forming a device isolation film.
제2a도 내지 제2e도는 본 발명의 일 실시예에 의한 소자분리막 형성방법을 설명하기 위해 도시한 단면도들이다.2A through 2E are cross-sectional views illustrating a method of forming an isolation layer in accordance with an embodiment of the present invention.
제3a도 내지 제3e도는 본 발명의 다른 실시예에 의한 소자분리막 형성방법을 설명하기 위해 도시한 단면도들이다.3A to 3E are cross-sectional views illustrating a method of forming an isolation layer in accordance with another embodiment of the present invention.
본 발명은 반도체소자의 제조방법에 관한 것으로, 특히 반도체기판의 손상 없이 버즈비크의 발생을 줄일 수 있는 반도체소자의 소자분리막 형성방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and more particularly, to a method of forming a device isolation film of a semiconductor device capable of reducing the occurrence of buzz beets without damaging the semiconductor substrate.
반도체소자 제조 시, 소자와 소자를 전기적으로 분리시키는 소자분리막 형성 방법으로, 일반적으로 국부적 산화 (Local Oxidation of Silicon; 이하 LOCOS라 칭함) 방식이 가장 많이 이용되고 있다.In the fabrication of semiconductor devices, a method of forming a device isolation film that electrically separates a device from a device is generally used as a local oxidation of silicon (hereinafter referred to as LOCOS).
LOCOS 방식으로 소자분리막을 형성할 때, 가장 문제가 되고 있는 것은 버즈비크 (Bird's beak) 발생이다. 버즈비크란 소자분리막의 일부가 활성영역으로 까지 침투하여 형성되는 것을 말한다. 반도체소자의 집적도가 증가함에 따라 소자 간을 분리시키기 위한 분리영역은 점점 작아지고, 이에 따라 소자의 집적도를 저해하는 요인으로 버즈비크가 큰 비중을 차지하게 되었다. 따라서, 버즈비크 발생을 억제하기 위한 여러 가지 방법들이 제안되었다.When the device isolation film is formed in the LOCOS method, the most problematic problem is the occurrence of Bird's beak. The Burj Beek means that a part of the device isolation layer penetrates into the active region and is formed. As the degree of integration of semiconductor devices increases, the separation area for separating devices becomes smaller, and accordingly, Buzzbee becomes a major factor as a factor that inhibits device integration. Accordingly, various methods have been proposed to suppress the occurrence of Buzzbeek.
그 중, 한 방법은, 소자분리막 형성을 위한 산화 공정 시, 반도체기판과 질화막 간의 스트레스를 완화시키기 위해 형성하던 완충막으로 산화막 대신 옥시나이트라이드를 사용하는 것이다.Among them, one method is to use oxynitride instead of the oxide film as a buffer film formed to relieve stress between the semiconductor substrate and the nitride film during the oxidation process for forming the device isolation film.
제1a도 내지 제1d도는 종래의 소자분리막 형성방법을 설명하기 위해 도시한 단면도들이다.1A to 1D are cross-sectional views illustrating a conventional method of forming a device isolation film.
반도체기판(10) 전면에 산화 완충용으로 옥시 나이트라이드막(12)를 형성하고, 이 옥시 나이트라이드막(12) 상에 산화방지막으로 질화막(14)를 형성한다 (제1a도).An oxy nitride film 12 is formed on the entire surface of the semiconductor substrate 10 for oxidation buffer, and a nitride film 14 is formed on the oxy nitride film 12 as an anti-oxidation film (Fig. 1A).
이어서, 소자분리막이 형성될 영역, 즉 비활성영역(1)의 옥시 나이트라이드막(12)이 노출되도록 질화막(14)을 패터닝하고 (제1b도), 결과물 기판을 산화분위기에 노출시킴으로써 소자분리막(16)을 형성한다 (제1c도).Subsequently, the nitride film 14 is patterned to expose the region where the device isolation film is to be formed, that is, the oxy nitride film 12 in the inactive region 1 (FIG. 1b), and the resulting substrate is exposed to an oxidizing atmosphere. 16) (Fig. 1c).
제1d도는 소자분리막(16) 형성을 위해 반도체기판(10) 상에 적층되었던 물질층들 (즉, 질화막(제1c도의 도면부호 14) 및 옥시 나이트라이드막(제1c도의 도면부호 12))을 제거한 후의 단면도이다.FIG. 1D illustrates material layers (ie, nitride film (reference numeral 14 in FIG. 1C) and oxy nitride film (reference numeral 12 in FIG. 1C)) that were stacked on the semiconductor substrate 10 to form the device isolation film 16. It is sectional drawing after removal.
버즈비크 발생을 줄이기 위해, 반도체기판(10)과 질화막(14) 간의 스트레스 완화용으로 사용한 산화막 대신에 옥시 나이트라이드(oxynitride)막(12)을 사용한 종래의 방법에 의하면, 스트레스 완화용으로 형성된 산화막을 파고드는 형태로 형성되던 버즈비크의 발생을 현저하게 줄일 수 있으나, 반도체기판(10) 표면에 여러 가지 손상을 발생시킨다.According to the conventional method using the oxynitride film 12 instead of the oxide film used for stress relaxation between the semiconductor substrate 10 and the nitride film 14 in order to reduce the occurrence of Burj beak, the oxide film formed for stress relaxation Although it is possible to significantly reduce the occurrence of the burj beak was formed in the form of a dent, but causes various damage to the surface of the semiconductor substrate (10).
이하, 반도체기판(10) 표면의 손상 원인에 대해 자세하게 기술한다.Hereinafter, the cause of the damage on the surface of the semiconductor substrate 10 will be described in detail.
옥시 나이트라이드막(12)에 대한 질화막(14)의 식각선택비는 산화막에 대한 식각선택비 보다 작다. 따라서, 비활성영역의 옥시 나이트라이드막(12)을 노출시키기 위해 질화막(14)을 패터닝하는 공정 시(제1B도 참조), 질화막(14) 하부에 형성되어 있는 옥시 나이트라이드막도 함께 제거되어, 이 옥시 나이트라이드막(12) 하부의 반도체기판 (A 부분)이 손상을 입게 된다.The etching selectivity of the nitride film 14 with respect to the oxy nitride film 12 is smaller than the etching selectivity with respect to the oxide film. Therefore, in the process of patterning the nitride film 14 to expose the oxy nitride film 12 in the inactive region (see also FIG. 1B), the oxy nitride film formed under the nitride film 14 is also removed. The semiconductor substrate (part A) under the oxynitride film 12 is damaged.
또한, 소자분리막(16)을 형성한 후, 소자분리막 형성을 위해 적층되었던 물질층들을 제거하는 공정 시 (제1d도 참조)에도 옥시나이트라이드막에 대한 질화막의 식각선택비가 작기 때문에 활성영역의 반도체기판(B 부분)이 손상된다.In addition, even after the device isolation layer 16 is formed, the etching selectivity of the nitride film with respect to the oxynitride film is small even during the process of removing the material layers stacked to form the device isolation film (see FIG. 1D). The substrate (part B) is damaged.
본 발명의 목적은 소자분리막 형성 공정 시, 반도체기판의 표면이 손상되는 것을 방지할 수 있는 반도체소자의 소자분리막 형성방법을 제공하는데 있다.An object of the present invention is to provide a device isolation film forming method of a semiconductor device that can prevent the surface of the semiconductor substrate from being damaged during the device isolation film forming process.
상기 목적을 달성하기 위한, 본 발명에 의한 소자분리막 형성방법은, 반도체기판 전면에 완충용 산화막을 형성하는 제1 단계; 상기 완충용 산화막 상에 산화방지막을 형성하는 제2 단계; 상기 산화방지막을 패터닝함으로써 필드산화막이 형성될 영역의 상기 완충용 산화막을 노출시키는 모양의 산화방지막 패턴을 형성하는 제3 단계; 노출된 상기 완충용 산화막을 습식식각함으로써 상기 산화방지막 패턴과 반도체기판 사이에 언더컷을 형성하는 제4 단계; 결과물 기판 전면에 옥시 나이트라이드막을 형성하는 제5 단계; 상기 언더컷에 형성되어 있는 것을 제외한 모든 옥시 나이트라이드막을 제거하는 제6 단계; 및 결과물 기판을 산화분위기에 노출시킴으로써 필드산화막을 형성하는 제7 단계를 포함하는 것을 특징으로 한다.In order to achieve the above object, the device isolation film forming method according to the present invention, the first step of forming a buffer oxide film on the entire surface of the semiconductor substrate; Forming an antioxidant film on the buffer oxide film; Patterning the antioxidant film to form an antioxidant pattern having a shape that exposes the buffer oxide film in a region where a field oxide film is to be formed; A fourth step of forming an undercut between the antioxidant pattern and the semiconductor substrate by wet etching the exposed buffer oxide layer; Forming a oxy nitride film on the entire surface of the resulting substrate; A sixth step of removing all oxy nitride films except those formed in the undercut; And a seventh step of forming a field oxide film by exposing the resulting substrate to an oxidizing atmosphere.
본 발명의 일 실시예에 있어서, 상기 제4 단계 후, 상기 제4 단계에 의해 노출된 반도체기판 표면에 패드산화막을 형성하는 단계를 더 포함하는 것이 바람직하다. 더욱 바람직하게는, 상기 패드산화막은 20Å - 80Å 정도의 두께로 형성된다.In one embodiment of the present invention, it is preferable to further include forming a pad oxide film on the surface of the semiconductor substrate exposed by the fourth step after the fourth step. More preferably, the pad oxide film is formed to a thickness of about 20 kPa-80 kPa.
본 발명에 있어서, 상기 산화방지막은 질화막으로 형성하는 것이 바람직하다. 또한, 상기 제6 단계는 습식식각 공정으로 행해지는 것이 바람직하다.In the present invention, the antioxidant film is preferably formed of a nitride film. In addition, the sixth step is preferably performed by a wet etching process.
따라서, 본 발명에 의한 소자분리막 형성방법에 의하면, 활성영역과 비활성영역의 경계부분에만 옥시 나이트라이드막을 형성함으로써, 옥시 나이트라이드막이 형성되지 않은 영역의 반도체기판이 손상되는 것을 방지할 수 있다.Therefore, according to the device isolation film forming method according to the present invention, by forming the oxy nitride film only at the boundary between the active region and the inactive region, it is possible to prevent damage to the semiconductor substrate in the region where the oxy nitride film is not formed.
이하, 첨부한 도면을 참조하여, 본 발명을 더욱 자세하게 설명하고자 한다.Hereinafter, with reference to the accompanying drawings, it will be described in more detail the present invention.
제2a도 내지 제2e도는 본 발명의 일 실시예에 의한 소자분리막 형성방법을 설명하기 위해 도시한 단면도들이다.2A through 2E are cross-sectional views illustrating a method of forming an isolation layer in accordance with an embodiment of the present invention.
먼저, 제2a도는 완충용 산화막(22) 및 산화방지막(24)을 형성하는 단계를 도시한 것으로서, 이는 반도체기판(20) 전면에, 예컨대 산화막을 성장시킴으로써 상기 완충용 산화막(22)을 형성하는 제1 공정 및 상기 완충용 산화막(22) 전면에, 예컨대 질화막과 같은 내산화물질을 도포함으로써 상기 산화방지막(24)을 형성하는 제2 공정으로 진행된다.First, FIG. 2A illustrates the steps of forming the buffer oxide film 22 and the antioxidant film 24, which form the buffer oxide film 22 by growing an oxide film on the entire surface of the semiconductor substrate 20, for example. The first step and the second step of forming the anti-oxidation film 24 by applying an oxide-resistant material such as a nitride film to the entire surface of the buffer oxide film 22, for example.
이때, 상기 완충용 산화막(22)는 160Å 정도의 두께로 형성하고, 상기 산화방지막(24)은, 예컨대 화학기상증착법으로 1,500Å 정도의 두께로 형성한다.At this time, the buffer oxide film 22 is formed to a thickness of about 160 kPa, and the antioxidant film 24 is formed to a thickness of about 1,500 kPa by, for example, chemical vapor deposition.
제2b도는 활성영역과 비활성영역의 경계부분에 언더컷(UC)을 형성하는 단계를 도시한 것으로서, 이는 비활성영역(1)의 상기 완충용 산화막이 노출되도록 상기 산화방지막을 부분적으로 식각하는 제1 공정 및 노출된 상기 완충용 산화막을 습식 식각함으로써 산화방지막(24)과 반도체기판(20) 사이에 언더컷(UC)을 형성하는 제2 공정으로 진행된다.FIG. 2B illustrates a step of forming an undercut (UC) at a boundary between an active region and an inactive region, which is a first process of partially etching the antioxidant layer to expose the buffer oxide layer of the inactive region 1. And wet etching the exposed buffer oxide film to form an undercut UC between the antioxidant film 24 and the semiconductor substrate 20.
상기 제1 공정 시, 완충용 산화막에 대한 산화방지막의 식각선택성이 우수하기 때문에, 산화방지막 식각에 대한 스톱층(stop-layer)으로 상기 완충용 산화막을 이용한다. 따라서, 산화방지막 식각 시 완충용 산화막도 함께 식각되어 반도체기판의 표면이 손상되는 경우는 발생하지 않는다.In the first step, since the etching selectivity of the antioxidant film is superior to the buffer oxide film, the buffer oxide film is used as a stop layer for the etching of the antioxidant film. Therefore, the buffer oxide film is also etched when the antioxidant film is etched so that the surface of the semiconductor substrate is not damaged.
또한, 상기 언더컷(UC)은 비활성영역(1)과 활성영역 (비활성영역을 제외한 영역)의 경계부분에만 형성한다. 이때, 언더컷(UC) 형성을 위해 행하는 상기 습식식각은 완충용 산화식각액 (Bufferd Oxide Etchant;이하 BOE라 칭함)를 사용하여 10초 동안 진행한다. 상기 습식식각에 의해 산화방지막(14) 하부의 완충용 산화막은 약 200Å - 300Å 정도로 식각된다.Further, the undercut UC is formed only at the boundary between the inactive region 1 and the active region (the region other than the inactive region). In this case, the wet etching performed to form the undercut (UC) is performed for 10 seconds using a buffered oxide etchant (hereinafter referred to as BOE). By the wet etching, the buffer oxide film under the antioxidant layer 14 is etched to about 200 kPa-300 kPa.
제2c도는 옥시 나이트라이드막(26)을 형성하는 단계를 도시한 것으로서, 이는 언더컷(제2b도의 UC 참조)이 형성되어 있는 결과물 기판 전면에, 예컨대 3,000Å 정도 두께의 옥시 나이트라이드를 증착함으로써 상기 옥시 나이트라이드막(26)을 형성하는 공정으로 진행된다.FIG. 2C illustrates the step of forming the oxy nitride film 26, which is formed by depositing oxy nitride having a thickness of, for example, about 3,000 kPa on the entire surface of the resultant substrate on which the undercut (see UC in FIG. 2B) is formed. It proceeds to the process of forming the oxy nitride film 26.
이때, 상기 옥시 나이트라이드는 언더컷을 완전히 채우도록 증착되어야 한다.At this time, the oxy nitride should be deposited to completely fill the undercut.
제2d도는 플럭된 옥시 나이트라이드막(26a)을 형성하는 단계를 도시한 것으로서, 이는 상기 옥시 나이트라이드막(제2c도의 도면부호 26)을, 예컨대 BOE를 사용하여 식각함으로써 상기 언더컷 (제2b도의 UC 참조)에 플럭된 옥시 나이트라이드막(26a)을 제외한 모든 옥시 나이트라이드막을 제거하는 공정을 진행된다.FIG. 2d shows the step of forming a flocculated oxy nitride film 26a, which etches the oxy nitride film (reference numeral 26 in FIG. 2c) using, for example, BOE, for example, the undercut (of FIG. 2b). The process of removing all the oxy nitride films except the oxy nitride film 26a which is plugged into UC is performed.
이때, 상기 옥시 나이트라이드막을 제거하는 상기 식각은, 분당 60Å - 90Å 정도의 제거량으로 3분정도 진행된다.At this time, the etching for removing the oxynitride film is performed for about 3 minutes with a removal amount of about 60 kPa-90 kPa per minute.
제2e도는 소자분리막(28)을 형성하는 단계를 도시한 것으로서, 이는 플럭된 옥시 나이트라이드막(26a) 사이로 노출된 반도체기판을 산화시킴으로써 비활성영역에 상기 소자분리막(28)을 형성하는 공정으로 진행된다.FIG. 2E shows the step of forming the device isolation film 28, which proceeds to the process of forming the device isolation film 28 in the inactive region by oxidizing the semiconductor substrate exposed between the oxy nitride films 26a. do.
이때, 활성영역을 침범하는 버즈비크의 발생은 상기 플럭된 옥시 나이트라이드막(26a)에 의해 방지된다. 상기 옥시 나이트라이드막은 내산화성 물질이다. 소자분리막(28)은 3,500Å 정도의 두께로 형성한다.At this time, the generation of the burj bevy invading the active region is prevented by the oxy nitride film 26a. The oxynitride film is an oxidation resistant material. The device isolation layer 28 is formed to a thickness of about 3,500 Å.
소자분리막(28) 형성 후, 산화방지막, 완충용 산화막 및 플럭된 옥시 나이트라이드막 (제2도의 도면부호 24, 22 및 26a)을 제거하는 공정시, 완충용 산화막(22)은 산화방지막(24) 제거 공정시 스톱층으로 작용하므로, 산화방지막(24) 제거 공정에 의해 반도체기판 표면이 손상되는 경우는 발생하지 않는다.After the device isolation film 28 is formed, in the process of removing the antioxidant film, the buffer oxide film, and the flecked oxy nitride film (reference numerals 24, 22, and 26a of FIG. 2), the buffer oxide film 22 is formed of the antioxidant film 24. Since it acts as a stop layer during the removal process, the semiconductor substrate surface is not damaged by the removal of the antioxidant film 24.
따라서, 본 발명에 의한 소자분리막 형성방법에 의하면, 활성영역과 비활성영역의 경계부분에만 옥시 나이트라이드막을 형성하고, 활성영역에는 완충용 산화막을 형성함으로써, 첫째, 활성영역을 파고드는 형태로 발생하던 버즈비크를 옥시 나이트라이드로 방지하고, 둘째, 질화막과의 식각선택성이 좋은 물질, 즉 완충용 산화막을 이용하여 반도체기판의 표면이 손상되는 것을 방지하였다.Therefore, according to the method of forming an isolation layer according to the present invention, an oxynitride film is formed only at a boundary between an active region and an inactive region, and a buffer oxide film is formed in the active region. Buzz be prevented with oxynitride, and second, the surface of the semiconductor substrate was prevented by using a material having a good etching selectivity with the nitride film, that is, a buffer oxide film.
제3a도 내지 제3e도는 본 발명의 다른 실시예에 의한 소자분리막 형성방법을 설명하기 위해 도시한 단면도들이다.3A to 3E are cross-sectional views illustrating a method of forming an isolation layer in accordance with another embodiment of the present invention.
상기 제2b도에서 설명한 방법으로 언더컷(UC)까지 형성한 후(제3a도), 상기 언더컷(UC) 및 산화방지막(24)에 의해 노출된 반도체기판 표면에, 예컨대 20Å - 80Å 정도 두께의 패드산화막(30)을 형성한다 (제3b도). 이어서, 상기 제2C도에서 설명한 방법으로 옥시 나이트라이드막(26)을 형성하고 (제3c도), 언더컷에만 플럭된 옥시 나이트라이드막(26a)이 남도록 습식식각 공정을 진행한 후 (제3d도), 결과물 기판을 산화시킴으로써 비활성영역에 소자분리막(28)을 형성한다 (제3e도).After the formation of the undercut UC (Fig. 3a) by the method described with reference to Fig. 2b (Fig. 3a), a pad having a thickness of, for example, 20 Å to 80 Å on the surface of the semiconductor substrate exposed by the under cut (UC) and the antioxidant film 24 An oxide film 30 is formed (FIG. 3B). Subsequently, the oxynitride film 26 is formed by the method described with reference to FIG. 2C (FIG. 3C), and the wet etching process is performed such that the oxy nitride film 26a that is plugged only in the undercut remains (FIG. 3D). ), The device isolation film 28 is formed in the inactive region by oxidizing the resultant substrate (FIG. 3E).
상술한 본 발명의 다른 실시예에 의하면, 옥시 나이트라이드막을 형성하기 전에 패드산화막을 형성함으로써 버즈비크 발생을 본 발명의 일 실시예 보다 감소시켰다.According to another embodiment of the present invention described above, by forming the pad oxide film before the oxy nitride film is formed, the occurrence of burj bevy is reduced than that of the embodiment of the present invention.
따라서, 본 발명에 의한 소자분리막 형성방법에 의하면, 활성영역을 파고드는 형태로 발생하던 버즈비크를 옥시 나이트라이드막으로 방지하고, 질화막과의 식각선택성이 좋은 물질, 즉 완충용 산화막을 이용하여 반도체기판의 표면이 손상되는 것을 방지하였다.Therefore, according to the method of forming a device isolation film according to the present invention, the semiconductor film is prevented by using an oxynitride film to prevent the Burj beak generated in the form of digging into the active region, and using a material having a good etching selectivity with the nitride film, that is, a buffer oxide film. The surface of the substrate was prevented from being damaged.
본 발명은 상기 실시예에 한정되지 않으며, 많은 변형이 본 발명이 속한 기술 분야에서 통상의 지식을 가진 자에 의해 가능함은 명백하다.The present invention is not limited to the above embodiments, and it is apparent that many modifications are possible by those skilled in the art.
Claims (5)
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950044268A KR0165483B1 (en) | 1995-11-28 | 1995-11-28 | Method for forming isolation on a semiconductor device |
| JP8309271A JPH09172006A (en) | 1995-11-28 | 1996-11-20 | Formation of device separation membrane of semiconductor element |
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| KR1019950044268A KR0165483B1 (en) | 1995-11-28 | 1995-11-28 | Method for forming isolation on a semiconductor device |
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| KR0165483B1 true KR0165483B1 (en) | 1999-02-01 |
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| KR100440266B1 (en) * | 1997-12-31 | 2004-09-18 | 주식회사 하이닉스반도체 | Method for forming field oxide layer of semiconductor device to improve characteristic of gate electrode and reduce leakage current |
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1995
- 1995-11-28 KR KR1019950044268A patent/KR0165483B1/en not_active IP Right Cessation
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