KR0149704B1 - Schottky rectifying device and manufacturing thereof - Google Patents
Schottky rectifying device and manufacturing thereofInfo
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- KR0149704B1 KR0149704B1 KR1019940025718A KR19940025718A KR0149704B1 KR 0149704 B1 KR0149704 B1 KR 0149704B1 KR 1019940025718 A KR1019940025718 A KR 1019940025718A KR 19940025718 A KR19940025718 A KR 19940025718A KR 0149704 B1 KR0149704 B1 KR 0149704B1
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- schottky
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- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 238000009792 diffusion process Methods 0.000 claims abstract description 9
- 239000012535 impurity Substances 0.000 claims abstract description 7
- 239000002184 metal Substances 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 16
- 230000005684 electric field Effects 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
본 발명은 쇼트키정류소자에 관한 것으로, 캐소오드전극에 연결되는 엔형반도체 기판과, 상기 반도체 기판상에 형성된 엔형 에피층과, 각각은 상기 에피층의 상부로부터 내부로 신장하도록 형성되고 서로 소정거리 이격되며 애노오드전극과 연결되는 적극막에 공통접속되는 다수개의 피형 불순물영역을 가지는 쇼트키 정류소자에 있어서, 상기 피형 불순물영역의 일부를 관통하여 상기 에피층의 내부로 신장하는 트렌치를 형성하고 그 내부를 상기 전극막으로 충진시키며, 상기 트렌치의 하부는 또다른 피형 확산영역에 의해 둘러싸이도록 형성됨을 특징으로 하는 쇼트키 정류소자에 관한 것이다.The present invention relates to a schottky rectifying device, comprising an en-semiconductor substrate connected to a cathode electrode, an en-type epi layer formed on the semiconductor substrate, each formed to extend inwardly from an upper portion of the epi layer and having a predetermined distance from each other. A Schottky rectifying element having a plurality of corrugated impurity regions spaced apart and commonly connected to an anode film connected to an anode electrode, wherein the trench penetrates a part of the corrugated impurity region and extends into the epi layer. A Schottky rectifier device is characterized in that the inside is filled with the electrode film, and the lower portion of the trench is formed to be surrounded by another shaped diffusion region.
Description
제1도는 본 발명에 따른 쇼트키 정류소자의 구조를 보이는 단면구조도.1 is a cross-sectional view showing the structure of the Schottky rectifying device according to the present invention.
제2도 내지 제4도는 제1도에 도시한 쇼트키 정류소자에서 p+영역(18)과 n-에피층(12)사이의 pn접합에 따른 공핍층을 보이는 도면으로서,2 to 4 are diagrams showing the depletion layer according to the pn junction between the p + region 18 and the n− epilayer 12 in the Schottky rectification device shown in FIG.
제2도는 애노오드-캐소오드 사이의 전계가 0(zero)일 때이고,2 is when the electric field between the anode and the cathode is zero,
제3도는 애노오드-캐소오드 사이의 전계가 순방향 바이어스 되었을 때이고,3 is when the electric field between the anode and the cathode is forward biased,
제4도는 애노오드-캐소오드 사이의 전계가 역방향 바이어스 되었을 때를 각각 나타내는 도면.4 shows when the electric field between the anode and the cathode was reverse biased, respectively.
제5도는 트렌치의 깊이와 간격에 따른 순방향 전압강하 특성을 보이는 도면.5 is a diagram showing forward voltage drop characteristics according to the depth and spacing of trenches.
본 발명은 전력전자용 정류소자에 관한 것으로, 특히 쇼트키장벽 특성을 이용한 쇼트키 정류소자에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to power electronic rectifiers, and more particularly, to Schottky rectifiers using Schottky barrier characteristics.
쇼트키 정류소자(Schottky rectifier)란 금속과 반도체의 접촉에 의해 반도체 표면에 형성되는 에너지 장벽, 즉 소위 쇼트키 장벽(barrier)을 이용하여 만든 정류소자로서 통상적으로 전력전자 응용회로의 정류소자로서 널리 사용된다. 일반적으로 쇼트키 정류소자는 캐소오드전극에 접속되는 n형의 반도체 기판상에 애노오드전극에 접속되는 금속층을 가지는 형태로 제조되며, 상기 애노오드전극으로부터 금속층에 양의 전압이 인가되면(즉, 순방향 바이어스가 인가되면) 반도체 기판측으로부터 금속층쪽으로 다수의 전자가 흐르게 되고, 반대로 상기 금속층에 음의 전압이 인가되면(즉, 역방향 바이어스가 인가되면) 상기한 전자의 흐름은 거의 없게 된다. 이러한 쇼트키 정류소자는 전도성분이 다수캐리어이므로 소수캐리어의 주입이 거의 없기 때문에 소수캐리어의 축적이 없으며, 그에 따라 스위칭 시간이 짧아서 고속 스위칭 동작에 적합하다는 특성이 있다. 또한, 한쪽이 금속이기 때문에 동일한 반도체 기판농도에 대해 상승 전압이 낮고 직렬저항도 낮을뿐만 아니라 금속의 열전도율이 좋기때문에 열의 발산이 양호하다는 특성도 있다.A Schottky rectifier is a rectifier made using an energy barrier formed on the surface of a semiconductor by the contact of a metal with a semiconductor, that is, a schottky barrier. Used. In general, a Schottky rectifying element is manufactured in a form having a metal layer connected to an anode electrode on an n-type semiconductor substrate connected to a cathode electrode, and when a positive voltage is applied from the anode electrode to the metal layer (that is, forward direction). When a bias is applied, a large number of electrons flow from the semiconductor substrate side toward the metal layer, and conversely, when a negative voltage is applied to the metal layer (that is, when a reverse bias is applied), there is almost no flow of the electrons. Since the Schottky rectifying device has a large number of conductive components, since there is almost no injection of a minority carrier, there is no accumulation of minority carriers. Accordingly, the Schottky rectifying device has a characteristic that it is suitable for a high speed switching operation due to a short switching time. In addition, since one side is a metal, not only the rise voltage is low and the series resistance is low for the same semiconductor substrate concentration, but also the heat conductivity is good because the metal has good heat dissipation.
이러한 쇼트키 정류소자에서 순방향 전류밀도를 높이기 위해 장벽높이가 낮은 금속을 전극으로 사용할 경우, 순방향 전류밀도를 증가시킬 수는 있으나 누설전류도 함께 증가되는 문제점을 갖게 된다.In the Schottky rectifier, when a metal having a low barrier height is used as an electrode to increase the forward current density, the forward current density can be increased, but leakage current is also increased.
상기한 문제점을 해결할 수 있는 새로운 정류소자가 1986년 간행된 Solid State Electronics, Vol.29, page 359-363에 High Current, Low Foward Drop JBS Power Rectifier 라는 제목으로 개시되어 있다. 상기 새로운 정류소자는 JBS(Junction Barrier Schottky)라는 소자로서, 상기 JBS소자는 쇼트키접합 가장자리에 p+ -n접합을 형성하여 가장자리의 전계를 낮추는 효과를 유도함으로써 누설전류를 감소시킨다.A new rectifier that solves the above problem is disclosed in Solid State Electronics, Vol. 29, page 359-363, published in 1986 under the heading High Current, Low Foward Drop JBS Power Rectifier. The new rectifier device is called a JBS (Junction Barrier Schottky), the JBS device forms a p + -n junction at the edge of the Schottky junction to reduce the leakage current by inducing the effect of lowering the electric field at the edge.
그러나, 상기 JBS소자에서는 누설전류를 감소시키는 효과를 갖는 반면에, 쇼트키접합 가장자리의 p+영역에서는 전류가 흐르지 못함에 따라 순방향 전류를 감소시키는 역장용을 일으키는 문제점을 갖고 있다. 그에 따라 전력전자회로에서 사용하기 위한 고전류 정류작용에는 부적합하게 된다.However, the JBS device has the effect of reducing the leakage current, while causing the force field to reduce the forward current as the current does not flow in the p + region of the Schottky junction edge. This makes them unsuitable for high current rectification for use in power electronic circuits.
따라서, 본 발명의 목적은 높은 전류밀도를 가지는 쇼트키 정류소자를 제공하는데 있다.Accordingly, an object of the present invention is to provide a Schottky rectifying element having a high current density.
본 발명의 다른 목적은 누설전류와 순방향 전압강하를 감소시킬 수 있는 쇼트키 정류소자를 제공하는데 있다.Another object of the present invention is to provide a Schottky rectifying device capable of reducing leakage current and forward voltage drop.
상기 목적에 따른 본 발명은, 캐소오드전극에 연결되는 엔형 반도체 기판과, 상기 엔형 반도체 기판상에 형성된 엔형 에피층과, 상기 엔형 에피층의 상부로부터 내부로 신장되도록 형성되고 서로 소정거리 이격되며 애노오드전극과 연결되는 전극막에 공통접속되는 다수개의 피형 불순물영역들을 가지는 쇼트키 정류소자에 있어서, 상기 피형 불순물영역의 일부를 관통하여 상기 엔형 에피층의 내부로 신장되는 트렌치가 형성되고 그 내부는 상기 전극막으로 충진되며, 상기 트렌치의 하부는 또다른 피형 확산영역에 의해 둘러싸이도록 형성됨을 특징으로 한다.According to the present invention, an N-type semiconductor substrate connected to a cathode electrode, an N-type epitaxial layer formed on the N-type semiconductor substrate, and formed to extend inwardly from an upper portion of the N-type epitaxial layer and are spaced apart from each other by a predetermined distance. In a Schottky rectifier having a plurality of impurity regions commonly connected to an electrode film connected to an anode electrode, a trench extending through a portion of the impurity region and extending into the N-type epitaxial layer is formed therein. It is filled with the electrode film, characterized in that the lower portion of the trench is formed so as to be surrounded by another shaped diffusion region.
상기 트렌치의 내벽에 충진된 전극막은, 순방향 바이어스시에 쇼트키 접합영역의 면적을 확장시키는 동작을 갖게 되며, 상기 트렌치의 하부를 둘러싸는 또다른 피형 불순물영역은 역방향 바이어스시에 쇼트키접합 면적을 공핍층으로 변환시켜 누설전류를 차단시키는 동작을 하게 된다.The electrode film filled in the inner wall of the trench has an operation of expanding the area of the Schottky junction region in the forward bias, and another shaped impurity region surrounding the lower portion of the trench reduces the Schottky junction area in the reverse bias. It converts to the depletion layer to cut off the leakage current.
따라서 본 발명에 따르게 되면 종래의 일반적은 JBS 소자에 비해 순방향 전압강하 및 역방향 누설전류가 모두 감소되는 쇼트키 정류소자가 얻어진다.Accordingly, according to the present invention, a Schottky rectifier device is obtained in which both forward voltage drop and reverse leakage current are reduced as compared with the conventional JBS device.
이하 본발명의 전반적인 이해를 돕기 위하여 첨부된 도면들을 참조하여 본 발명에 따른 바람직한 실시예를 상세히 설명한다. 도면들중 동일한 구성요소들은 어디에서든지 같은 인용번호로 참조되어질 것이다. 하기의 설명에 따르면, 당 분야의 통상지식인에게 본 발명이 자명해질 것이다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings in order to help general understanding of the present invention. Like elements in the figures will be referred to by the same reference numerals everywhere. According to the following description, the present invention will become apparent to those skilled in the art.
제1도는 본 발명에 따른 쇼트키 정류소자의 구조를 보이는 단면구조도이다. 제1도를 참조하면, n+도핑된 실리콘기판(10)상에 n-에피층(12)이 형성되어 있다. 상기 기판(10)의 하부면은 캐소오드전극(14)에 접속되어 있고, 상기 에피층(12)의 상부에는 절연막(16)이 형성되어 있다. 상기 에피층(12)의 상부 표면으로부터 내부로 신장하는 p+확산층(18)이 다수개 형성되고, 절연막(16)이 제거되어 표면이 노출된 p+확산층(22)들의 내부로 신장하는 트렌치를 통하여 금속전극(20)이 형성되어 있다. 각 트렌치를 채우는 금속전극(20)은 공통접속되어 애노오드전극에 연결된다. 상기 트렌치의 하단부에 인접되는 에피층(12)은 p+도핑된 p+확산층(122)에 둘러싸여 있다. 상기 제1도에서, 금속전극(20)과 n-에피층(12)이 서로 접촉하는 부위가 쇼트키 접합부위이며, 트렌치내부를 금속전극으로 채움에 따라 쇼트키접합 면적이 확대됨은 당연하다.1 is a cross-sectional structural view showing the structure of the Schottky rectifying device according to the present invention. Referring to FIG. 1, an n− epitaxial layer 12 is formed on an n + doped silicon substrate 10. The lower surface of the substrate 10 is connected to the cathode electrode 14, and an insulating film 16 is formed on the epi layer 12. A plurality of p + diffusion layers 18 extending inwardly from the upper surface of the epitaxial layer 12 are formed, and the insulating layer 16 is removed to expose metals through trenches extending into the p + diffusion layers 22 having exposed surfaces. The electrode 20 is formed. The metal electrodes 20 filling each trench are commonly connected and connected to the anode electrode. An epitaxial layer 12 adjacent the lower end of the trench is surrounded by a p + doped p + diffusion layer 122. In FIG. 1, a portion where the metal electrode 20 and the n-epi layer 12 contact each other is a Schottky junction, and the Schottky junction area is enlarged by filling the trench with a metal electrode.
제2도 내지 제4도는 제1도에 도시한 쇼트키 정류소자에서 p+영역(18,22)과 n-에피층(12)사이의 pn접합에 따른 공핍층을 보이는 도면으로서, 제2도는 애노오드-캐소오드 사이의 전계가 0(zero)일때이고, 제3도는 애노오드-캐소오드 사이의 전계가 순방향 바이어스되었을 때이고 제4도는 애노오드-캐소오드 사이의 전계가 역방향 바이어스 되었을 때를 각각 나타낸다.2 to 4 show a depletion layer according to the pn junction between p + regions 18 and 22 and n-epitaxial layer 12 in the Schottky rectification device shown in FIG. 1, and FIG. When the electric field between the anode and the cathode is zero, FIG. 3 shows when the electric field between the anode and the cathode is forward biased, and FIG. 4 shows when the electric field between the anode and the cathode is reverse biased. .
이제 제2도 내지 제4도를 참조하여, 제1도에 도시한 본 발명에 따른 쇼트키 정류소자의 특성 및 그 동작을 설명한다.Referring now to FIGS. 2 to 4, the characteristics and operation of the Schottky rectifying element according to the invention shown in FIG. 1 will be described.
제2도를 참조하면, 애노오드-캐소오드 사이의 전계가 0일때, p+확산층(18,22)과 n-에피층(12)의 접촉부에는 pn접합에 따른 공핍층(26a,26b,26c,26d)이 형성되고, 트렌치의 측벽 및 n-에피층(12)의 상부에 상기 n-에피층(12)과 금속전극이 접촉되는 영역이 쇼트키 접속영역이다.Referring to FIG. 2, when the electric field between the anode and the cathode is 0, the contact portions of the p + diffusion layers 18 and 22 and the n-epi layer 12 are depleted layers 26a, 26b, 26c according to the pn junction. 26d) is formed, and a region where the n-epi layer 12 and the metal electrode are in contact with the sidewall of the trench and the n-epi layer 12 is a Schottky connection region.
제3도를 참조하면, 애노오드-캐소오드 사이의 전계가 순방향 바이어스되면, 주지된 바와 같이, p+확산층(18,22)과 n-에피층(12) 사이의 pn접합에 따른 공핍층(26a,26b,26c,26d)은 축소됨에 따라, 트렌치의 측벽 및 n-에피층(12)의 상부에서 상기 n-에피층(12)과 금속전극이 접촉되는 쇼트키 접속영역의 면적이 확대된다. 따라서, 이때에는 종래의 JBS와 동일한 쇼트키접속영역을 확보함은 물론 상기 트렌치의 측벽에서도 쇼트키 접속영역이 확보됨에 따라, 정류작용에 핵심적인 요소인 쇼트키접합의 유효면적이 확대되므로, 본 발명에 따른 쇼트키 정류소자는 순방향 접합강하가 줄어듦은 당연하다.Referring to FIG. 3, if the electric field between the anode and the cathode is forward biased, as is well known, the depletion layer 26a according to the pn junction between the p + diffusion layers 18 and 22 and the n− epilayer 12 is known. As 26b, 26c, and 26d are reduced, the area of the Schottky connection region in which the n-epi layer 12 and the metal electrode are in contact with each other on the sidewalls of the trench and the n-epi layer 12 is enlarged. Therefore, in this case, the same schottky connection area as in the conventional JBS is secured, and as the schottky connection area is also secured on the sidewalls of the trench, the effective area of the schottky junction, which is a key factor in the rectifying action, is enlarged. In the Schottky rectifying device according to the invention, it is natural that the forward junction drop is reduced.
제4도를 참조하면, 애노오드-캐소오드 사이의 전계가 역방향 바이어스되면, 주지된 바와 같이, p+확산층(18,22)과 n-에피층(12) 사이의 pn접합에 따른 공핍층(26a,26b,26c,26d)이 확장됨에 따라, 트렌치의 측벽 및 n-에피층(12)의 상부에서 상기 n-에피층(12)과 금속전극이 접촉되는 쇼트키 접합영역의 면적은 모두 공핍층으로 변환된다. 따라서, 이때에는 종래의 JBS에 비해 더욱 확실한 공핍영역의 확보가 가능하므로, 역방향 누설전류의 발생도 대폭 감소된다.Referring to FIG. 4, if the electric field between the anode and the cathode is reverse biased, as is well known, the depletion layer 26a according to the pn junction between the p + diffusion layers 18 and 22 and the n-epi layer 12 is known. And 26b, 26c, and 26d, the area of the Schottky junction region in which the n-epi layer 12 and the metal electrode are in contact with each other on the sidewalls of the trench and the n-epi layer 12 is all depleted. Is converted to. Therefore, at this time, since the depletion region can be more surely secured as compared with the conventional JBS, the generation of reverse leakage current is greatly reduced.
제5도는 트렌치의 깊이 td와 트렌치 사이의 간격 m에 따른 순방향 전압강하의 특성을 나타내는 도면이다. 본 출원의 발명자는 하기의 표1의 조건으로 본 발명에 따라 제작된 쇼트키 정류소자의 특성을 검사하여 제5도에 도시된 결과를 얻었다.5 is a diagram showing the characteristics of the forward voltage drop according to the distance m between the trench depth td and the trench. The inventor of the present application examined the characteristics of the Schottky rectifying device manufactured according to the present invention under the conditions of Table 1 below to obtain the results shown in FIG.
제5도를 참조하면, 트렌치 간격이 같은 경우에는 트렌치 깊이가 깊은 쪽이 더 낮은 순방향 전압강하를 가짐을 알수 있다. 이는 전술한 바와 같이, 금속전극과 n-에피층이 서로 접촉되는 쇼트키 접합영역이 트렌치의 깊이가 깊어질수록 증가되기 때문임을 알 수 있다. 또한 트렌치 깊이가 일정한 경우에는 트렌치 사이의 간격이 클수록 순방향 전압강하가 줄어들게 된다.Referring to FIG. 5, it can be seen that when the trench intervals are the same, the deeper trench depth has a lower forward voltage drop. As described above, it can be seen that the Schottky junction region in which the metal electrode and the n-epi layer are in contact with each other increases as the depth of the trench increases. In addition, when the trench depth is constant, the forward voltage drop decreases as the interval between the trenches increases.
상술한 바와 같이, 본 발명에 따라 트렌치를 형성한 쇼트키 정류소자에서는 순방향 전압강하 및 역방향 누설전류가 감소되는 효과를 갖는다. 따라서, 단위 면적당 전류밀도를 높일 수 있기 때문에 대단히 유효한 전력전자용 정류소자가 제공된다.As described above, in the Schottky rectifying element in which the trench is formed according to the present invention, the forward voltage drop and the reverse leakage current are reduced. As a result, since the current density per unit area can be increased, a highly effective power electronic rectifier is provided.
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| KR1019940025718A KR0149704B1 (en) | 1994-10-07 | 1994-10-07 | Schottky rectifying device and manufacturing thereof |
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| KR1019940025718A KR0149704B1 (en) | 1994-10-07 | 1994-10-07 | Schottky rectifying device and manufacturing thereof |
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