KR0146896B1 - Epoxy resin composition for semiconductor insulating - Google Patents
Epoxy resin composition for semiconductor insulatingInfo
- Publication number
- KR0146896B1 KR0146896B1 KR1019940031822A KR19940031822A KR0146896B1 KR 0146896 B1 KR0146896 B1 KR 0146896B1 KR 1019940031822 A KR1019940031822 A KR 1019940031822A KR 19940031822 A KR19940031822 A KR 19940031822A KR 0146896 B1 KR0146896 B1 KR 0146896B1
- Authority
- KR
- South Korea
- Prior art keywords
- epoxy resin
- resin composition
- semiconductor device
- sealing
- present
- Prior art date
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- 239000000203 mixture Substances 0.000 title claims abstract description 34
- 239000003822 epoxy resin Substances 0.000 title claims abstract description 30
- 229920000647 polyepoxide Polymers 0.000 title claims abstract description 30
- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 238000007789 sealing Methods 0.000 claims abstract description 14
- 229910002026 crystalline silica Inorganic materials 0.000 claims abstract description 12
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 12
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 10
- 239000011256 inorganic filler Substances 0.000 claims abstract description 5
- 229910003475 inorganic filler Inorganic materials 0.000 claims abstract description 5
- 239000011342 resin composition Substances 0.000 claims description 7
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 claims description 2
- 229930003836 cresol Natural products 0.000 claims description 2
- 230000003321 amplification Effects 0.000 abstract description 13
- 238000003199 nucleic acid amplification method Methods 0.000 abstract description 13
- 230000008859 change Effects 0.000 abstract description 5
- 239000000463 material Substances 0.000 description 7
- 238000005538 encapsulation Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 239000007822 coupling agent Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- GQHTUMJGOHRCHB-UHFFFAOYSA-N 2,3,4,6,7,8,9,10-octahydropyrimido[1,2-a]azepine Chemical compound C1CCCCN2CCCN=C21 GQHTUMJGOHRCHB-UHFFFAOYSA-N 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 3
- 150000001412 amines Chemical class 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 150000002460 imidazoles Chemical class 0.000 description 3
- 239000012796 inorganic flame retardant Substances 0.000 description 3
- -1 metal complex compound Chemical class 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 150000008065 acid anhydrides Chemical class 0.000 description 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000008393 encapsulating agent Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 150000003003 phosphines Chemical class 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 239000004014 plasticizer Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000012756 surface treatment agent Substances 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 1
- CQOZJDNCADWEKH-UHFFFAOYSA-N 2-[3,3-bis(2-hydroxyphenyl)propyl]phenol Chemical compound OC1=CC=CC=C1CCC(C=1C(=CC=CC=1)O)C1=CC=CC=C1O CQOZJDNCADWEKH-UHFFFAOYSA-N 0.000 description 1
- MKYBYDHXWVHEJW-UHFFFAOYSA-N N-[1-oxo-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propan-2-yl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(C(C)NC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 MKYBYDHXWVHEJW-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 235000013869 carnauba wax Nutrition 0.000 description 1
- 239000004203 carnauba wax Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000010191 image analysis Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229940079865 intestinal antiinfectives imidazole derivative Drugs 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- SMQUZDBALVYZAC-UHFFFAOYSA-N salicylaldehyde Chemical compound OC1=CC=CC=C1C=O SMQUZDBALVYZAC-UHFFFAOYSA-N 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000007916 tablet composition Substances 0.000 description 1
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
- C08L63/04—Epoxynovolacs
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
- C08K3/013—Fillers, pigments or reinforcing additives
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/34—Silicon-containing compounds
- C08K3/36—Silica
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K7/00—Use of ingredients characterised by shape
- C08K7/16—Solid spheres
- C08K7/18—Solid spheres inorganic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
본 발명에 에폭시 수지, 경화제, 경화촉진제, 무기충전재 등으로 이루어진 에폭시 수지조성물에 있어서 구형화 지수가 85이상인 결정성 실리카를 충전재로서 전체 조성물에 대해 10 내지 90중량% 함유시켜서 고온 전기적특성 특히 전류증폭율 변화를 개선시킨 반도체 소자 밀봉용 에폭시 수지조성물에 관한 것이다.In the present invention, the epoxy resin composition composed of an epoxy resin, a curing agent, a curing accelerator, an inorganic filler, and the like contains 10 to 90% by weight of the crystalline silica having a spherical index of 85 or more, based on the total composition, of the high temperature electrical properties, particularly current amplification. The present invention relates to an epoxy resin composition for sealing semiconductor elements with improved rate change.
Description
본 발명은 반도체 소자 밀봉용 에폭시 수지 조성물에 관한 것으로서, 더욱 상세하게는 구상화된 결정성 실리카를 사용하여 마이크로 디바이스의 고온전류 특성을 개선시킨 반도체 소자 밀봉용 에폭시 수지조성물에 관한 것이다.The present invention relates to an epoxy resin composition for semiconductor element sealing, and more particularly, to an epoxy resin composition for semiconductor element sealing that improves high temperature current characteristics of a micro device using spherical crystalline silica.
에폭시 수지 조성물은 우수한 내습특성, 기기적 특성 및 전기적 특성으로 인해 전기, 전자 및 반도체 분야에 널리 사용되어지고 있다. 특히 직접회로(IC), 고집적회로(LSI), 초고집적회로(VLSI), 트랜지스터(Transitor) 그리고 다이오드(Diode)등의 봉지재로서 극히 일부분을 제외한 대부분의 반도체소자 밀봉용 재료로 에폭시 수지 조성물이 사용되고 있다.Epoxy resin compositions are widely used in the fields of electricity, electronics, and semiconductors because of their excellent moisture resistance, mechanical properties, and electrical properties. In particular, it is an encapsulant such as integrated circuit (IC), integrated circuit (LSI), ultra high integrated circuit (VLSI), transistor (Transitor) and diode (Diode), and most of the materials for sealing semiconductor devices except for a very small portion of the epoxy resin composition. It is used.
이러한 에폭시 수지조성물은 기타 봉지재로 사용되는 금속 혹은 세라믹 봉지재에 비하여 가격이 저렴하고 생산성이 우수하여 민수용 반도체 제품의 대부분이 에폭시 수지조성물로 생산되고 있으며, 이들 제품의 신뢰도 향상에 꾸중한 노력이 이어지고 있는 실정이다.The epoxy resin composition is cheaper and more productive than the metal or ceramic encapsulation material used for other encapsulation materials, so most of the civilian semiconductor products are produced with epoxy resin compositions, and efforts have been made to improve the reliability of these products. It is being continued.
그러나 에폭시 수지 봉지재의 경우 일반 재료 및 고분자 재료가 가지는 고온 영역에서의 전기적 특성의 저하, 특 체적 고유저항의 저하로 인하여 고온 영역에서의 반도체 소자를 작동시킬 경우 봉지재를 통한 전류 방출(leak current)등이 문제시되고 있어 이에 대한 개선이 요구되어지고 있다.However, in the case of epoxy resin encapsulation material, current is released through encapsulation material when operating semiconductor device in high temperature region due to deterioration of electrical characteristics and high specific resistivity of general materials and polymer materials. Etc. are being questioned and improvement is demanded.
이와같은 문제를 해결시키기 위하여 산 무수물계 경화제에 이미다졸계 촉매를 사용하여 고온에서의 전류증폭률(hFE)을 개선시키는 방법(미국특허 4,013, 612), 인계 촉매인 트리페닐포스핀(triphenyl phosphine), 실리카의 표면처리제인 커플링제의 사용 및 금속 착화합물제를 사용하는 방법 (유럽특허 41,622), DBU(1,8-Diazabicyclo-(5,4,0)-7-Undecene)와 페놀노블락계 및 산 무수물계 경화제를 사용하여 150℃이상에서의 전류증폭율을 개선하는 방법(일본공개특허 소56-94761, 소57-210,647)등에 대한 연구가 진행되어 왔다.In order to solve this problem, a method of improving the current amplification factor (h FE ) at high temperature by using an imidazole catalyst in an acid anhydride curing agent (US Patent 4,013, 612), triphenyl phosphine which is a phosphorus catalyst ), The use of a coupling agent which is a surface treatment agent of silica and a method of using a metal complex compound (European Patent 41,622), DBU (1,8-Diazabicyclo- (5,4,0) -7-Undecene) and phenol noblock system and The use of an acid anhydride-based curing agent has been studied for improving the current amplification factor at 150 ° C or higher (Japanese Patent Laid-Open No. 56-94761, 57-210,647).
그러나 에폭시 수지조성물중 60-90 중량부를 차지하는 충전재에 대한 연구 실적은 미흡한 상태이다.However, the results of research on fillers, which account for 60-90 parts by weight of epoxy resin compositions, are insufficient.
따라서 본 발명의 목적은 에폭시 수지조성물에 있어 구상화된(구형화도 85이상) 결정성 실리카를 사용함으로서 고온 영역에서의 전기적 특성, 특히 반도체 소자의 전류증폭율 변화가 적은 반도체 소자 밀봉용 수지 조성물을 제공하는데 있다.Accordingly, an object of the present invention is to provide a resin composition for sealing a semiconductor device having a small change in electrical properties, particularly in the current amplification factor of a semiconductor device, by using crystalline silica that is spherical (more than 85 degree of sphericity) in an epoxy resin composition. It is.
상기 목적을 달성하기 위하여, 본 발명은 구상화된 결정성 실리카를 사용 하였으며, 구상화도의 측정을 위하여 입자의 각 없음 정도인 구형화도(Sphere Index)에 의하여 평가하였다.In order to achieve the above object, the present invention used a spheroidized crystalline silica, and was evaluated by the spherical index (Sphere Index) of the degree of no angle of the particles for the measurement of the degree of sphericity.
구형화도는 입자의 형상을 수치로 표현한 지수로서, (4π×면적)÷(원둘레)2으로 구하는 원형도 계수를 화상 분석장치로 측정하여서 이 계수가 0.8이상의 입자비율을 표시한 것이다.The degree of sphericity is an exponent in which the shape of the particles is expressed numerically, and a circularity coefficient obtained by (4π × area) ÷ (circumference) 2 is measured by an image analysis device, and this coefficient represents a particle ratio of 0.8 or more.
이 방법에 의하면 완전 구형입자의 경우 구형화도 값은 100이 되며 일반분쇄형 실리카의 경우 50 - 60의 구형화도 값을 가지게 된다.According to this method, the degree of sphericity is 100 for fully spherical particles and 50-60 for spherical degree.
이하, 본 발명을 상세히 설명한다.Hereinafter, the present invention will be described in detail.
본 발명은 크레졸 노블락형 에폭시 수지와 페놀 노블락형 경화제, 경화 촉진제 무기충전재 등을 함유하는 반도체 소자 밀봉용 에폭시 수지조성물에 있어서, 전기적 특성이 우수한 반도체 소자 밀봉용 에폭시 수지조성물을 제공 한다.The present invention provides an epoxy resin composition for semiconductor element encapsulation having excellent electrical characteristics in an epoxy resin composition for semiconductor element encapsulation containing a cresol noblock type epoxy resin, a phenol noblock type curing agent, a curing accelerator inorganic filler, and the like.
즉, 본 발명의 반도체 소자 밀봉용 에폭시 수지조성물의 구성은 올소-크레졸 노블락형 에폭시 수지와 페놀 노블락형 경화제, 그리고 유기포스핀계 화합물인 트리페놀포스핀 혹은 아민계 경화제인 이미다졸류 혹은 DBU를 경화 촉진제로 사용하는 유기 조성물과 구형화된 결정성 실리카 혹은 분쇄형 결정성 실리카를 충전재로 사용한 기본 조성에 이형제, 착색제, 표면처리제 그리고 유.무기 난연제 및 개질제등을 첨가하여 구성된다.That is, the composition of the epoxy resin composition for semiconductor element sealing of the present invention is to cure the oligo-cresol noblock type epoxy resin, the phenol noblock type curing agent, and the imidazoles or DBUs, which are triphenolphosphine or amine curing agents, which are organic phosphine compounds. It is composed by adding a release agent, a colorant, a surface treatment agent, an organic / inorganic flame retardant and a modifier to a basic composition using an organic composition used as an accelerator and spherical crystalline silica or pulverized crystalline silica as a filler.
이와같은 본 발명의 수지 조성물의 바람직한 조성예를 들면 다음과 같다.The preferable composition example of such a resin composition of this invention is as follows.
본 발명의 수지조성물은 상기와 같은 조성으로 하는 것이 가장 좋은데, 본 발명에서 사용하는 에폭시 수지로서는 내열성이 우수한 올소-크레졸 노블락형 에폭시 수지를 사용하며, 특히 에폭시 당량이 190 - 220이고, 불순물의 함량이 10ppm 이하인 고순도 에폭시 수지이어야 한다. 또한, 경화제로서는 페놀 노블락형 수지를 사용하는데, 연화점이 65 - 100℃이어야 하고, 하이드록실 당량이 100 - 120이며, 역시 불순물의 함량이 10ppm이하인 수지를 사용해야 한다.The resin composition of the present invention is best to have the composition as described above, as the epoxy resin used in the present invention is used an oxo-cresol noblock type epoxy resin excellent in heat resistance, in particular the epoxy equivalent of 190-220, the content of impurities It should be a high purity epoxy resin of 10 ppm or less. In addition, a phenol noblock type resin is used as the curing agent, and a softening point of 65-100 ° C., a hydroxyl equivalent weight of 100-120, and a resin having an impurity content of 10 ppm or less should be used.
한편, 본 발명에서 특징적으로 사용되는 구상화된 결정성 실리카의 구형화도는 85이상의 값을 가져야 하며 전체 조성물중 10 - 90 중량%, 바람직하게는 15 중량% 이상을 사용하는 것이 보다 효과적이다. 만일 구형화도가 85미만일 경우 고온 전류 증폭율 변동값에 대한 개선을 기대할 수 없으며, 구형화된 실리카의 함량이 10중량%미만일 경우 역시 전류증폭율 변동을 개선시킬 수 없다.On the other hand, the degree of sphericity of the spherical crystalline silica used characteristically in the present invention should have a value of 85 or more and it is more effective to use 10-90% by weight, preferably 15% by weight or more of the total composition. If the degree of sphericity is less than 85, the improvement of the high temperature current amplification rate fluctuation cannot be expected. If the content of the spherical silica is less than 10% by weight, the current amplification rate fluctuation cannot be improved.
본 발명에서 사용하는 충전재의 입자 크기는 3㎛ - 35㎛ 벙위의 것을 사용하는 것이 좋으며 바람직하게는 평균 입도가 10㎛ - 17㎛ 범위의 것을 사용하는 것이 반도체 소자 밀봉시의 성형성 및 공극 발생저하에 효과적이었다.The particle size of the filler used in the present invention is preferably in the range of 3㎛-35㎛ range, preferably using an average particle size in the range of 10㎛-17㎛ reduced moldability and pore generation when sealing a semiconductor device Was effective.
또한 경화 촉진제로는 통상 아민류, 이미다졸유도체 및 유기포스핀계 화합물이 사용되고 있으며 본 발명에서는 유기포스핀계 화합물인 트리페놀포스핀과 이미다졸 유도체인 1-벤질-2-메틸 아미다졸의 2종을 혼합사용하는 것이 좋았으며, 아민류인 DBU 촉매를 사용하는 것이 전류 증폭율 변화에 보다 효과적이다.In addition, as the curing accelerator, amines, imidazole derivatives and organic phosphine compounds are generally used. In the present invention, two kinds of triphenol phosphine, an organic phosphine compound, and 1-benzyl-2-methyl amidazole, which is an imidazole derivative, are mixed. It was better to use, and the use of DBU catalysts, which are amines, is more effective in changing the current amplification rate.
본 발명에서 무기충전재의 표면처리에 사용하는 커플링제 및 가소성 부여제의 경우 사용을 하지 않아도 전류증폭율 변화에 크게 영향을 미치지 않으며, 봉지재의 다른 요구특성상 첨가할 경우 커플링제로서는 감마 글리시 독시 플로필 트리메톡시실란을 사용하는 것이 가장 좋으며, 또한 가소성 부여제로서는 통상적으로 실리콘 고무나 에폭시 변성 실로콘 오일을 사용하며 본 발명에서는 제조된 봉지재의 상용성을 증가시키기 위하여 페놀 노블락수지와 에폭시 변성 실리콘 오일의 어덕트를 사용한다.In the present invention, the coupling agent and the plasticizer for the surface treatment of the inorganic filler do not significantly affect the current amplification rate change even when not used, and when added to other required properties of the encapsulant, the coupling agent is gamma glycidoxy flow. It is best to use fill trimethoxysilane, and as a plasticizer, a silicone rubber or epoxy modified silocon oil is generally used, and in the present invention, in order to increase the compatibility of the encapsulated material, phenol noble resin and epoxy modified silicone are used. Use oil adducts.
그 이외에 이형제로서 카라나우바 왁스등을 0.05 - 3.0 중량%, 착색제로는 카본 블랙을 0.05 - 3.0 중량% 사용하였으며, 유기 난연제로는 브롬화 에폭시 수지를, 무기 난연제로는 삼산화안티몬을 사용한다.In addition, 0.05 to 3.0% by weight of carnauba wax and the like and 0.05 to 3.0% by weight of carbon black were used as a release agent, and a brominated epoxy resin was used as an organic flame retardant, and antimony trioxide was used as an inorganic flame retardant.
상기와 같은 본 발명의 조성물 만들기 위하여 먼저 무기충전재와 무기난연제를 커플링제로서 표면처리한 후 헨셀 믹서나 키타 예비 믹서기에서 균일하게 혼합시키고, 나이더나 롤밀을 이용하여 85 - 110℃에서 약 3 - 10분간 용융혼합 시킨 다음 냉각시켜서 분쇄기를 이용하여 분말로 만든다.In order to make the composition of the present invention as described above, the inorganic filler and the inorganic flame retardant are first surface-treated as a coupling agent, and then uniformly mixed in a Henschel mixer or a kita premixer, using a Nader or roll mill at about 3-10 ° C. The mixture is melted for a minute and then cooled to a powder using a grinder.
분말 조성물은 분말상태로 반도체소자 밀봉시 사용하거나 혹은 타정기에 넣어 일정한 형태로 타블렛화하여 반도체소자 밀봉시 활용하게 된다.The powder composition is used to seal a semiconductor device in a powder state or tabletted into a tablet tablet in a predetermined form to be used to seal a semiconductor device.
반도체소자 밀봉시에는 제조된 타블렛형태의 수지조성물을 고주파 예열기를 이용하여 10 - 40초간 예열 시킨 후 170 - 180℃에서 80 - 180초간 트렌스퍼 몰딩프레스로 성형시키면 반도체소자를 밀봉시킬 수 있게 된다.When sealing a semiconductor device, the prepared tablet composition is preheated for 10-40 seconds using a high frequency preheater and then molded in a transfer molding press at 170-180 ° C. for 80-180 seconds to seal the semiconductor device.
상술한 바와같이 본 발명에 의해 제조한 수지조성물을 반도체소자 밀봉용 에폭시 수지조성물을 제조하기 위하기 에폭시 수지로서 기존의 분쇄형 결정성 실리카에 구형화된 결정성 실리카를 혼합 사용하는 것을 특징으로 하며, 특히 사용 실리카의 100%를 구형화된 결정성 실리카를 사용할 경우 고온에서의 전류증폭율 변동율을 현저히 개선시킬 수 있는 수지조성물을 제공할 수 있다.As described above, a spherical crystalline silica is mixed with an existing pulverized crystalline silica as an epoxy resin to prepare an epoxy resin composition for sealing a semiconductor device. In particular, when using the crystalline silica spherical 100% of the used silica can provide a resin composition that can significantly improve the rate of change of the current amplification rate at high temperatures.
본 발명의 실시예는 다음과 같다.Embodiments of the present invention are as follows.
[실시예 1 - 4][Examples 1-4]
다음 표 1에 나타낸 조성대로 각 성분들을 평량한 후 헨셀믹서에서 균일하게 혼합한 후 분말 상태의 1차 조성물을 만든다. 그 다음에는 니이더를 이용하여 95℃에서 5분간 혼련시킨 후 냉각 공정을 거쳐 분쇄한 다음 타블렛 공정을 거쳐 에폭시 수지조성물을 제조하였다.Next, the ingredients are weighed according to the composition shown in Table 1, and then uniformly mixed in a Henschel mixer to prepare a primary composition in powder form. Next, the mixture was kneaded at 95 ° C. for 5 minutes using a kneader, pulverized through a cooling process, and then subjected to a tablet process to prepare an epoxy resin composition.
이렇게 하여 얻어진 에폭시 수지조성물에 대하여 다음과 같은 방법으로 물성을 측정하였고, 반도체소자 밀봉시에는 고주파 예열기에서 25초간 예열한후 170℃의 트랜스퍼 몰딩 프레스를 이용하여 반도체 소자를 밀봉한 후 175℃에서 6시간 후경화시킨 반도체 소자를 이용하여 전류증폭율 변화값을 측정하였으며 그 결과를 표-2에 나타내었다.The physical properties of the epoxy resin composition thus obtained were measured by the following method.In the case of sealing a semiconductor device, after preheating for 25 seconds in a high frequency preheater, the semiconductor device was sealed using a transfer molding press at 170 ° C., and then at 6 ° C. at 175 ° C. The change in current amplification factor was measured using a semiconductor device cured after time, and the results are shown in Table 2.
1) 스파이랄 플로우(Spiral Flow)1) Spiral Flow
EMMI 규격에 준해 금형을 제작하여 성형도로 175℃,175 ℃ according to EMMI standard
성형압력 70kgf/cm2에서 측정Measured at molding pressure 70kgf / cm 2
2) 유리전이온도 (Tg)2) Glass transition temperature (Tg)
TMA 설비를 이용하여 측정Measurement using a TMA facility
3) 굴곡강도 및 굴곡탄성율3) Flexural Strength and Flexural Modulus
UTM을 사용하여 ASTM D190에 의해 측정Measured by ASTM D190 using UTM
4) 열팽창 계수 (α)4) coefficient of thermal expansion (α)
ASTM D696에 의해 측정Measured by ASTM D696
5) 전류증폭율5) Current Amplification Rate
성형시킨 반도체소자를 175℃에서 6시간 후 경화시킨 후 IB및 IC를 측정하고, 150℃ 오븐에서 168시간 동안 Reverse Vias를 가한 후 실온으로 냉각하여 IB및 IC를 측정한다.The molded semiconductor device was cured after 6 hours at 175 ° C., and then I B and I C were measured, and reverse vias were added in a 150 ° C. oven for 168 hours, and then cooled to room temperature to measure I B and I C.
각 측정된 IB, IC로부터 전류증폭율을 계산하고 시험전후의 전류증폭을 비를 구한다.Current amplification factor from each measured I B , I C Calculate and calculate the ratio of current amplification before and after the test.
[비교예][Comparative Example]
다음 표-1의 조성에 따라 상기 실시예 1-4와 동일한 방법으로 제조하고 물성을 측정하여 그 결과를 표-2에 나타내었다.According to the composition of the following Table-1 was prepared in the same manner as in Example 1-4 and measured the physical properties and the results are shown in Table-2.
상기 표-2에서 나타난 결과에서 보듯이 본 발명에 의한 수지조성물에 비교예에 비하여 월등히 우수한 고온특성을 나타내고 있으며, 따라서 반도체 소자의 고온 환경실험인 고온 역전압 시험 (HTRB; High Temperature Reverse Vias)시 우수한 특성을 나타낼 수 있는 반도체 소자 밀봉용 수지 조성물임을 알 수 있다.As shown in the results shown in Table 2, the resin composition according to the present invention exhibits excellent high temperature characteristics as compared with the comparative example, and thus, during the high temperature reverse test (HTRB), which is a high temperature environmental test of a semiconductor device. It can be seen that the resin composition for sealing semiconductor elements can exhibit excellent properties.
Claims (2)
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| KR100797967B1 (en) * | 2006-12-31 | 2008-01-24 | 제일모직주식회사 | Epoxy resin composition for encapsulating semiconductor device and semiconductor device??using the same |
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