KR0138869B1 - Sputter chamber for the metal film deposition and high temperature process - Google Patents

Abstract

The present invention relates to a sputtering equipment for the deposition of metal thin films, and more particularly to a sputter reactor capable of metal thin film deposition and high temperature heat treatment to perform the deposition process and the heat treatment process in one reactor. It has a wide range and precise temperature control, and has a structure capable of simultaneously or sequentially performing high temperature heat treatment such as metal thin film deposition and reflow by heating after deposition due to fast heating rate and cooling rate in one reactor. In order to provide a sputter reactor capable of metal thin film deposition and high temperature heat treatment, an infrared lamp is used as a heat source, and wafer heating is performed by direct heating by radiation of infrared light. In particular, deposition of metal thin film and heat treatment after deposition are performed in one reactor. Reactors and collies of sputter equipment, which can be carried out either independently or independently The sputtering process performed far for the improvement of data (collimator) for using the clogging (clogging) phenomenon to characterized in that it is possible.

Description

Sputter reactor for metal thin film deposition and high temperature heat treatment

1 is a cross-sectional view of the sputter reactor for metal thin film deposition and high temperature heat treatment prepared in the present invention.

* Explanation of symbols for main parts of the drawings

101: wafer clamper assembly

102: wafer holder assembly

103: Wafer

104: actuator shaft

105: lamp assembly

106: Bellows A

107: wafer clamper / holder actuator mechanism

108: lamp assembly actuator mechanism

109: feedthrough assembly

110: a mirror

111: I.R lamp

112: quartz window

113: quartz plate for lamp assembly

114: Bellows B

115: vacuum exhaust port

116: gas ahowerhead

117: isolation valve

118: wafer transfer port

119: Ar gas showerhead

120: quartz plate clamper

121: shield assembly

The present invention relates to a sputtering equipment for the deposition of a metal thin film, and more particularly to a sputter reactor capable of metal thin film deposition and high temperature heat treatment to perform the deposition process and heat treatment process in one reactor.

In order to form low-resistance, high-reliability metallization as a wiring process for the manufacture of semiconductor devices, it is basically to maintain high vacuum at base pressure of 1.0E-9torr or lower and E-3torr level, and to improve deposition uniformity of the deposited thin film Optimal magnet design and arrangement of the metal target portion is essential.

In addition, the heating of the wafer is additionally required for improving the deposition rate and improving the film quality of the deposited thin film.

In addition, in order to deposit a thin film having good conformality to a high contact ratio or via, a heat treatment such as reflow of the deposited thin film is required, and precise wafer heating at low pressure is essential for this. to be.

Therefore, there is a need for a reactor for sputtering equipment having the ability to perform reproducible deposition and reflow of thin films with precise adjustment of heat treatment time and temperature.

However, the existing sputtering equipment adopts the wafer heating method by resistance heating, so the wafer heating and cooling rate is very slow, so it is impossible to change the substrate temperature quickly.

Therefore, not only the deposition and reflow of thin films need to be carried out in separate reactors, but also additional high temperature processes are required, resulting in reduced yield, contamination by wafer transfer between reactors, and additional heat treatment cycles.

In the present invention devised to meet such demands, the heating temperature range is wide and precise temperature control is possible, and high temperature heat treatment such as reflowing by deposition after heating and deposition of metal thin film is performed by fast heating rate and cooling rate. It is an object of the present invention to provide a sputtering reactor capable of depositing a metal thin film and having a high temperature heat treatment having a structure that can be simultaneously or sequentially performed in a reactor.

In order to achieve the above object, in the present invention, an infrared lamp is used as a heat source, and wafer heating is performed by direct heating by radiation of infrared light. In particular, deposition of a metal thin film and heat treatment after deposition are sequentially or independently in one reactor. It is characterized in that it is possible to perform a remote sputtering process for improving the clogging phenomenon when using a reactor and a collimator of the sputtering equipment that can be performed.

The sputtering system proposed in the present invention is a shield for preventing deposition on the side wall of the reactor and a target equipped with a magnet rotated by a rotating motor, a substrate heating module for heating the wafer, and a vacuum for maintaining the reactor. It consists of a vacuum system and a wafer transfer system.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

1 is a cross-sectional view showing the internal structure of the reactor of the infrared heating and remote sputterable sputter equipment proposed in the present invention.

The lamp assembly 105 adopting the infrared heating method is a module that heats the wafer by direct heating of infrared light using a bulb type or a linear lamp 111. The reflector which maximizes reflection efficiency and uniformity of temperature 110 was attached to maximize the heating efficiency.

The infrared lamp adopted in the present invention emits a spectrum of high energy in the wavelength range that can be easily absorbed by the semiconductor substrate, and the fast response speed makes it easy to control the closed circuit temperature and excellent in temperature control in the low and high temperature ranges. In addition, it is made of special quartz with high transmittance of infrared light, which can emit infrared light stably for a long time.

This system is different from the heat conduction type indirect heating method in the conventional sputtering system, so the wafer is directly heated by the direct radiation of infrared light from the lamp. Is improved.

Therefore, it is possible to perform the process in a wider temperature range than the indirect heating method by adopting the direct heating method of the wafer, and it is possible to change the instantaneous temperature by fast response speed by precise adjustment of the heat treatment time and temperature. A separate process with a different process temperature range can be performed continuously or sequentially in one reactor while minimizing phosphorous effects, so that the deposition of the metal thin film and the heat treatment of the deposited thin film can be performed.

In addition, the existing sputter systems are installed by using a separate heat source for the baking (BAKING) of the reactor, the system proposed in the present invention can be used as a wafer heating lamp without a separate baking lamp.

The wafer 103 enters the reactor through the wafer carrier 118, is placed on the wafer holder assembly 102, and the reactor is isolated from the outside by the isolation valve 117, and then the wafer clamp assembly 101 during the process. It is fixed by).

At this time, nitrogen or helium gas having high thermal conductivity was uniformly sprayed on the back surface of the wafer from the ring-type gas injection hole 116 provided in the quartz plate clamper 120 so that the temperature distribution of the wafer was uniform.

The position of the wafer is varied by the wafer clamper / holder driving mechanism 107, the drive shaft 104, and the bellows A 106, so that the position of the wafer can be changed during the transfer and the distance sputtering process.

In addition, the position between the lamp assembly 105 and the quartz plate 112 is also changed by the lamp assembly driving mechanism 108, thereby changing the wafer position during the distance sputtering process and the temperature caused by the distance between the wafer and the lamp. Changes in uniformity and heating rate were made possible.

Therefore, the reactor can be repositioned while the vacuum is maintained by the bellows B 114, and the infrared lamp module is isolated by the quartz plate 113 for the lamp assembly.

The feed-through assembly 109 for supplying power and cooling water of the lamp module, thermocouple for detecting compressed air and temperature, pyrometer, etc. is installed on the inner wall of the lamp assembly driving mechanism 108 so as to locate the lamp assembly 105. Variables were facilitated.

A coolant line was installed inside the reactor wall, and the temperature of the reactor wall and the temperature of the shield 121 were measured in-situ to control the chiller to maintain a constant temperature.

A vacuum exhaust port 115 was installed on the side of the reactor, and the internal pressure could be measured by a vacuum gauge.

In addition, a circular argon gas injector 119 is installed on the side wall of the target to uniformly supply the argon gas, so that uniform spraying is performed on the surface of the target so that the influence of nitrogen or helium gas remaining can be ignored. .

The sputtering reactor capable of depositing the metal thin film and the high temperature heat treatment of the present invention allows the wafer to be directly radiated and heated by radiation of infrared light, thereby improving the heating rate and cooling rate of the wafer, and thus performing additional heat treatment after deposition and deposition of the metal thin film. It can be carried out sequentially or independently in one reactor, and it is possible to perform a long distance sputtering process to prevent deterioration of step coverage characteristics and deposition rate due to the blockage of the collimator when using the collimator. The lamp module provides the advantage of performing the baking of the system without installing a separate baking heating module.

As described above, the present invention uses an infrared lamp as a heat source, and in order to increase the heating efficiency, the lamp assembly with a reflector and the infrared light transmitting window are composed of a quartz window having excellent infrared light transmitting characteristics. Direct heating type substrate heating mechanism is used to perform heat treatment process such as thin film deposition and reflow process sequentially or independently in one reactor.

In addition, the position of the heating plate and the position of the wafer holder can be changed up and down to adjust the temperature uniformity of the wafer and to change the heating and cooling rates.

This is done by an infrared light heating source for heating the substrate without using a separate heat source for baking the reactor.

In addition, the distance between the target and the wafer can be varied so that the sputtering process can be performed through the change of the position of the wafer holder and the position of the heating substrate to improve the step coverage characteristics of the thin film, and a ring installed under the quartz plate clamper. Nitrogen or helium gas is heated and supplied inside the gas supply line in the form, and argon gas line in the form of a ring is installed on the side wall surface of the target so that the argon gas is uniformly sprayed on the surface of the target, thereby preventing Can be ignored.

Claims (5)

A sputtering apparatus for depositing a metal thin film, comprising: a target equipped with a magnet rotated by a rotating motor; A shield portion for preventing deposition on the sidewalls of the reactor and a substrate heating module for heating the wafer; A vacuum system for maintaining the vacuum in the reactor; A sputter reactor capable of thin film deposition and high temperature heat treatment, characterized in that to perform a heat treatment process such as thin film deposition and reflow process sequentially or independently in one reactor composed of a wafer transfer system. According to claim 1, wherein the substrate heating module for heating the wafer is an infrared light lamp 111 of the direct radiation heating method as a heat source; A reflector 110 to increase heating efficiency; A sputtering reactor capable of depositing a metal thin film and performing high temperature heat treatment, wherein the infrared light transmitting window is composed of a quartz plate 112 having excellent infrared light transmitting characteristics. The method of claim 1, wherein the substrate heating module is configured to change the position of the wafer holder up and down by the lamp assembly drive mechanism 108 to be able to adjust the temperature uniformity of the wafer and the heating, cooling rate. Sputter reactor for metal thin film deposition and high temperature heat treatment. The method of claim 1, wherein the target is coupled to the target by the wafer clamper / holder driving mechanism 107, the drive shaft 104, and the bellows A 106 to allow a remote sputtering process through the positional change of the wafer holder and the heating substrate. A sputter reactor for metal thin film deposition and high temperature heat treatment, wherein the spacing between wafers can be varied. According to claim 1, wherein the lower portion of the quartz plate clamper of the target to form a gas supply line in the form of a ring so that nitrogen or helium gas is heated and supplied therein, the argon gas is uniformly on the surface of the target sidewall surface A sputter reactor capable of thin film deposition and high temperature heat treatment, wherein the argon gas line in the form of a ring is sprayed so that the effects of nitrogen and helium gas can be ignored.