KR0137913B1 - Capacitor switching voltage controlled oscillator - Google Patents

Capacitor switching voltage controlled oscillator

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Publication number
KR0137913B1
KR0137913B1 KR1019940032893A KR19940032893A KR0137913B1 KR 0137913 B1 KR0137913 B1 KR 0137913B1 KR 1019940032893 A KR1019940032893 A KR 1019940032893A KR 19940032893 A KR19940032893 A KR 19940032893A KR 0137913 B1 KR0137913 B1 KR 0137913B1
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KR
South Korea
Prior art keywords
capacitor
transmission
reception
switching
voltage
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KR1019940032893A
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Korean (ko)
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KR960027344A (en
Inventor
서석철
Original Assignee
정장호
금성정보통신 주식회사
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Priority to KR1019940032893A priority Critical patent/KR0137913B1/en
Publication of KR960027344A publication Critical patent/KR960027344A/en
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Publication of KR0137913B1 publication Critical patent/KR0137913B1/en

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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/1262Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising switched elements
    • H03B5/1265Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising switched elements switched capacitors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1203Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier being a single transistor
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/124Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
    • H03B5/1243Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising voltage variable capacitance diodes

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)

Abstract

본 발명은 캐패시터 스위칭 전압제어 발진기에 관한 것으로, 특히 CT-2시스템의 RF모듈, 단방향 무전기 및 시분할 다원접속(TDMA)방식의 무선통신 시스템에서 캐패시터 스위칭을 통해 송, 수신 국부발진 주파수를 한개의 모듈에서 발생시킬 수 있는 캐패시터 스위칭 전압제어 발진기(VCO)에 관한 것이다.The present invention relates to a capacitor switching voltage controlled oscillator, and in particular, one module for transmitting and receiving local oscillation frequency through capacitor switching in an RF module, a unidirectional radio, and a time division multiple access (TDMA) wireless communication system of a CT-2 system. A capacitor switching voltage controlled oscillator (VCO) that can be generated by

본 캐패시터 스위칭 전압제어 발진기는 인덕터(L)와, 제1캐패시터(C4)와, 상기 인덕터와 병렬 접속된 제2캐패시터(C2)와, 상기 제2캐패시터와 병렬 접속된 제3캐패시터(C1)와, 상기 제3캐패시터와 접지간에 직렬 접속되며 인가 전압에 따라 캐패시턴스가 가변되는 전압가변 캐패시터(Cv)로 이루어진 공진회로(13)와; 상기 제3캐패시터의 일단자가 베이스에 접속되고 에미터에 타단자가 접속되어 상기 공진회로(13)와 함께 발진회로를 형성하는 트랜지스터(Q2)와; 송신 및 수신 스위칭 제어신호(TXEN)와 송, 수신 발진 주파수 제어신호(CONT)를 발생하는 제어수단(11)과; 상기 송,수신 스위칭 제어신호가 입력되는 경우만 상기 제1캐패시터(C4)를 상기 인덕터(L)에 병렬 접속시키기 위한 캐패시터 스위칭 수단(12)과; 상기 송, 수신 발진 주파수 제어신호(CONT)와 상기 발진회로의 출력(Vco)에 응답하여 송, 수신 발진주파수에 대응한 입력전압(Vin)을 상기 전압가변 캐패시터(Cv)로 출력하기 위한 듀얼 주파수 합성기(15)로 구성된다.The capacitor switching voltage controlled oscillator includes an inductor L, a first capacitor C4, a second capacitor C2 connected in parallel with the inductor, and a third capacitor C1 connected in parallel with the second capacitor. A resonant circuit (13) comprising a voltage variable capacitor (Cv) connected in series between the third capacitor and the ground and having a variable capacitance according to an applied voltage; A transistor (Q2) having one end of the third capacitor connected to a base and the other end connected to an emitter to form an oscillation circuit together with the resonance circuit (13); Control means (11) for generating transmission and reception switching control signals (TXEN) and transmission and reception oscillation frequency control signals (CONT); Capacitor switching means (12) for parallel connection of said first capacitor (C4) to said inductor (L) only when said transmission / reception switching control signal is input; Dual frequency for outputting the input voltage Vin corresponding to the transmission and reception oscillation frequency to the voltage variable capacitor Cv in response to the transmission and reception oscillation frequency control signal CONT and the output Vco of the oscillation circuit. It consists of a synthesizer 15.

Description

캐패시터 스위칭 전압제어 발진기Capacitor Switching Voltage Controlled Oscillators

제1도는 종래의 콜피츠형 전압제어발진기의 회로구성도,1 is a circuit diagram of a conventional Colpitts voltage controlled oscillator,

제2도는 본 발명에 따른 캐패시터 스위칭 전압제어 발진기의 블록도.2 is a block diagram of a capacitor switching voltage controlled oscillator according to the present invention.

제3도는 콘드롤러의 송,수신 스위칭제어신호에 대란 신호천이도,3 is a signal transition diagram corresponding to the transmission and reception switching control signals of the controller,

제4도는 제2도에 도시된 본 발명의 상세회로도이다.4 is a detailed circuit diagram of the present invention shown in FIG.

*도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

11:콘트롤러12:캐패시터 스위치11: Controller 12: Capacitor switch

13:공진기14:발진기13: Resonator 14: Oscillator

15:듀얼주파수합성기16:저역통과필터15: dual frequency synthesizer 16: low pass filter

17:전압가변 캐패시터17: voltage variable capacitor

본 발명은 캐패시터 스위칭 전압제어 발진기에 관한 것으로, 특히 CT-2 시스템의 RF모듈, 단방향 무전기 및 시분할 다원접속(TDMA)방식의 무선통신 시스템에서 캐패시터 스위칭을 통해 송,수신 국부발진 주파수를 한개의 모듈에서 발생시킬 수 있는 캐패시터 스위칭 전압제어 발진기(VCO)에 관한 것이다.The present invention relates to a capacitor switching voltage controlled oscillator, and in particular, a single module for transmitting and receiving local oscillation frequency through capacitor switching in an RF module, a unidirectional radio and a time division multiple access (TDMA) wireless communication system of a CT-2 system. A capacitor switching voltage controlled oscillator (VCO) that can be generated by

헤테로다인 방식의 무선통신 시스템은 신호의 송,수신에 필요한 별도의 송수신 극부발진주파수를 발생하기 위해 별도의 송,수신 국부발진회로를 구비하고 있다.The heterodyne wireless communication system is provided with separate transmission and reception local oscillation circuits to generate separate transmission and reception polarization frequency required for signal transmission and reception.

제1도에는 종래의 캐패시터 피드백 콜피츠형 발진기를 변형한 클랩-고리엘(Clapp-Gouriet) VCO가 도시되어 있으며, 이 VCO는 한개의 트랜지스터(Q1)와 두개의 캐패시터(C1,C2)를 사용한 피드백 회로를 형성하여 부성저항을 발생시킨다.FIG. 1 shows a Clap-Gouriet VCO modified from a conventional capacitor feedback Colpitts oscillator, which uses one transistor Q1 and two capacitors C1 and C2. A feedback circuit is formed to generate negative resistance.

이때 발생된 부성저항은 공진기의 부하(RL)의 손실을 상쇄시켜 발진을 일으키게 한다. 이때 입력임피던스는 두 캐패시터(C1,C2)와 가변 캐패시터(CV) 및 인덕터(L)의 조합에 따라 변한다.The negative resistance generated at this time cancels the loss of the load RL of the resonator to cause oscillation. At this time, the input impedance is changed according to the combination of the two capacitors C1 and C2, the variable capacitor CV and the inductor L.

결국 입력전압(Vin)의 레벨젼화에 따라 가변캐패시턴스(Cv)가 변하여 전체회로의 캐패시턴스가 변하게 되며, 그 결과 발진주파수가 정해진 발진범위내에서 제어된다.As a result, the variable capacitance Cv changes according to the level transition of the input voltage Vin, thereby changing the capacitance of the entire circuit. As a result, the oscillation frequency is controlled within the defined oscillation range.

제1도에서 미설명부호 Cc는 커플링 캐패시터이고, R1과 R2는 저항을 나타낸다.In FIG. 1, reference numeral Cc denotes a coupling capacitor, and R1 and R2 denote resistances.

상기한 바와 같이 종래의 전압제어발진기는 어느 일정한 범위내에서 입력되는 신호의 전압레벨에 따라 캐패시터가 가변되어 개패시턴스의 가변범위내에서 발진주파수를 발생시키는 구조를 가지고 있으나 100MHz이상 주파수차가 나는 신호를 발생시키기에는 불가능한 구조로 보통 20MHz 이내의 주파수 대역에서만 부성저항을 발생시킬 수 있다는 문제가 있었다.As described above, a conventional voltage controlled oscillator has a structure in which a capacitor is variable according to a voltage level of a signal input within a certain range to generate an oscillation frequency within a variable range of capacitance, but having a frequency difference of 100 MHz or more. There is a problem that the negative resistance can be generated only in the frequency band within 20MHz as a structure that is impossible to generate a.

따라서 본 발명의 목적은 캐패시터 스위칭을 통해 송,수신 국부 발진 주파수를 한개의모듈에서 발생시킬 수 있는 캐패시터 스위칭 전압제어 발진기를 제공하는 것이다.Accordingly, an object of the present invention is to provide a capacitor switching voltage controlled oscillator capable of generating a transmitting and receiving local oscillation frequency in one module through capacitor switching.

상기한 목적을 달성하기 위하여 본 발명은 인덕터와, 제1캐패시터와, 상기 인덕터와 병렬 접속된 제2캐패시터와, 상기 제2캐패시터와 병렬 접속된 제3캐패시터와, 상기 제3캐패시터와 접지간에 직렬 접속되며 인가 전압에 따라 캐패시턴스가 가변되는 전압가변 캐패시터로 이루어진 공진회로와; 상기 제3캐패시터의 일단자가 베이스에 접속되고 에미터에 타단자가 접속되어 상기 공진회로와 함께 발진회로를 형성하는 트랜지스터와; 송신 및 수신 스위칭 제어신호와 송, 수신 발진 주파수 제어신호를 발생하는 제어수단과; 상기 송,수신 스위칭 제어신호가 입력되는 경우만 상기 제1캐패시터를 상기 인덕터(L)에 병렬 접속시키기 위한 캐패시터 스위칭 수단과; 상기 송, 수신 발진 주파수 제어신호와 상기 발진회로의 출력에 응답하여 송, 수신 발진주파수에 대응한 입력전압을 상기 전압가변 캐패시터로 출력하기 위한 듀얼 주파수 합성기로 구성되는 것을 특징으로 하는 캐패시터 스위칭 전압제어 발진기를 제공한다.In order to achieve the above object, the present invention provides an inductor, a first capacitor, a second capacitor connected in parallel with the inductor, a third capacitor connected in parallel with the second capacitor, and a series between the third capacitor and ground. A resonant circuit connected to the capacitor and having a variable voltage capacitor having a variable capacitance according to an applied voltage; A transistor having one end of the third capacitor connected to a base and another end connected to an emitter to form an oscillation circuit together with the resonance circuit; Control means for generating transmission and reception switching control signals and transmission and reception oscillation frequency control signals; Capacitor switching means for connecting the first capacitor to the inductor L in parallel only when the transmission / reception switching control signal is input; Capacitor switching voltage control comprising a dual frequency synthesizer for outputting the input voltage corresponding to the transmission and reception oscillation frequency to the voltage variable capacitor in response to the transmission and reception oscillation frequency control signal and the output of the oscillation circuit. Provide an oscillator.

이하에 첨부도면을 참고하여 본 발명을 더욱 상세하게 설명한다.Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings.

제2도에는 본 발명의 바람직한 일실시예에 따른 캐패시터 스위칭 전압제어 발진기의 블록도가 도시되어 있고, 제3도는 콘트롤러의 송, 수신 스위칭 제어신호(TXEN)에 대한 신호 천이도가 도시되어 있다.FIG. 2 is a block diagram of a capacitor switching voltage controlled oscillator according to a preferred embodiment of the present invention, and FIG. 3 is a signal transition diagram of a transmission and reception switching control signal TXEN of a controller.

먼저 제2도를 참고하면 콘트롤러(11)의 송, 수신 스위칭 제어신호(TXEN)에 따라 캐패시터 스위치(12)가 동작하고 콘트롤러(11)로부터의 제어신호(CONT)와 발진기(14)로부터의 출력(VCO)에 따라 주파수 합성기(15)로부터 발생된 입력전압(Vin)이 저역통과필터(16)를 거쳐 전압가변 캐패시터(17)의 캐패시턴스를 제어하여 원하는 채널 주파수를 맞춘다.First, referring to FIG. 2, the capacitor switch 12 operates according to the transmission and reception switching control signal TXEN of the controller 11, and outputs the control signal CONT from the controller 11 and the output from the oscillator 14. According to V CO , the input voltage Vin generated from the frequency synthesizer 15 controls the capacitance of the voltage variable capacitor 17 via the low pass filter 16 to adjust the desired channel frequency.

이때 캐패시터 스위치(12)는 송, 수신시에 발생되어야 할 주파수를 결정하며 전압 가변 캐패시터(17)는 채널 주파수를 결정하는 데 사용된다.At this time, the capacitor switch 12 determines the frequency to be generated during transmission and reception, and the voltage variable capacitor 17 is used to determine the channel frequency.

캐패시터 스위치(12)와 전압가변 캐패시터(17)의 조합에 따라 공진 주파수가 결정되고 그 결과 발진기(14)내에서 공진 주파수를 갖는 신호가 발생된다.The resonant frequency is determined according to the combination of the capacitor switch 12 and the voltage variable capacitor 17, resulting in a signal having the resonant frequency in the oscillator 14.

이하에 제3도를 참고하여 제4도에 도시된 본 발명의 상세회로를 설명한다.Hereinafter, the detailed circuit of the present invention shown in FIG. 4 will be described with reference to FIG.

제3도의 TXEN의 신호천이도에서 송신(TX)버스트 타임(Burst Time)(TBI)시에는 TXEN 제어신호의 상태가 온이 되고 나머지 시간, 즉 수신(RX)버스트 타임시에는 오프가 된다.In the TXEN signal transition diagram of FIG. 3, the state of the TXEN control signal is turned on during the transmission (TX) burst time (TBI) and turned off during the remaining time, that is, the reception (RX) burst time.

여기서 TBI과 RBI을 제외한 나머지 TB2-----TBN, RB2-----RBN은 다른 채널에 할당된 버스트 타임 구간을 나타낸다.In this case, except for TBI and RBI, TB2 ----- TBN and RB2 ----- RBN represent burst time intervals allocated to other channels.

따라서 제4도에서 콘트롤러(11)에 의해 제어되는 TXEN제어신호가 온인 경우 PNT 트랜지스터(Q1)의 바이어스 조건은 오프가 되어 차단상태로 된다. 이 경우 캐소드가 Q1의 콜렉터에 접속된 스위칭 다이오드(D1)는 온상태가 되어 캐패시터(C4)에 전류가 흐르게 되고 캐패시터 스위칭은 온상태가 된다.Therefore, when the TXEN control signal controlled by the controller 11 in FIG. 4 is on, the bias condition of the PNT transistor Q1 is turned off to be in a blocking state. In this case, the switching diode D1 whose cathode is connected to the collector of Q1 is turned on so that a current flows in the capacitor C4, and the capacitor switching is turned on.

한편 콘트롤러(11)의 송, 수신 선택신호, 송수신 발진주파수에 대한 데이타 등을 포함한 제어신호(CONT)와 발진 트랜지스터(Q2)의 에미터에서 커플링 캐패시터(Cc)를 통해 입력된 발진 출력(Vco)에 응답하여 송수신 발진주파수에 대응한 입력전압(Vin)을 듀얼주파수합성기(15)에서 발생하면 입력전압(Vin)역시 캐패시터(C5,C6) 및 저항(R7)에 의해 구성되어 고주파 성분을 바이패스시키는 루프(loop)필터를 거쳐 전압가변 캐패시터(Cv)에 인가되므로 인가된 전압에 따라 가변 캐패시터(Cv)값이 결정된다.On the other hand, the oscillation output Vco input through the coupling capacitor Cc from the control signal CONT and the emitter of the oscillation transistor Q2 including the transmission / reception selection signal of the controller 11 and data on the transmission / reception oscillation frequency. When the input voltage Vin corresponding to the transmit / receive oscillation frequency is generated by the dual frequency synthesizer 15, the input voltage Vin is also composed of the capacitors C5 and C6 and the resistor R7. Since it is applied to the voltage variable capacitor Cv through a loop filter to pass, the variable capacitor Cv value is determined according to the applied voltage.

이때 트랜지스터(Q2)의 에미터와 베이스간에 접속된 캐패시터(C1)는 부성저항을 발생시키는 피드백회로를 구성하며 발진기 전체 회로에 입력 임피던스는 캐패시터(Cv,C1,C2,C3 및 C4) 및 인덕터(L)의 조합형태로 되어 송신시의 발진 주파수를 발생하게 된다.At this time, the capacitor C1 connected between the emitter of the transistor Q2 and the base constitutes a feedback circuit for generating a negative resistance, and the input impedance of the entire oscillator circuit is the capacitors Cv, C1, C2, C3 and C4 and the inductor ( The combination of L) generates an oscillation frequency at the time of transmission.

한편 콘트롤러(11)에 의해 제어되는 TXEN제어신호가 오프인 경우 PNP트랜지스터(Q1)은 저항(R3,R4 및 R5)의 바이어스 조건에 따라 도통상태가 되고, 이때 트랜지스터(Q1)의 콜렉터 전위는 스위칭 다이오드(D1)의 캐소드 전위보다 높게 되므로 다이오드(D1)는 차단상태가 된다.On the other hand, when the TXEN control signal controlled by the controller 11 is off, the PNP transistor Q1 is in a conductive state according to the bias conditions of the resistors R3, R4, and R5, and the collector potential of the transistor Q1 is switched. Since diode D1 is higher than the cathode potential of diode D1, diode D1 is blocked.

그 결과 발진기 전체회로의 입력임피던수는 캐패시턴스(C1,Cv,C3 및 C2)와 인덕터(L)의 조합형태에 따라 좌우되어 수신시의 발진주파수를 발생하게 된다.As a result, the input impedance of the entire circuit of the oscillator depends on the combination of the capacitances C1, Cv, C3 and C2 and the inductor L to generate the oscillation frequency upon reception.

제3도에서 미설명부호 R1과 R2는 바이어스 설정용 저항을 가리킨다.In FIG. 3, reference numerals R1 and R2 denote resistors for bias setting.

상기한 바와 같은 본 발명에서는 콘트롤러로부터의 TXEN제어신호에 의해 캐패시터(C4)를 LG공진회로에 접속 또는 분리시켜 기본 송, 수신 발진 주파수를 선택하고, 입력 전압(Vin)에 의해 전압가변 캐패시터(Cv)를 가변시켜 채널 주파수를 결정함에 의해, 현재 서비스 중인 CT-2 또는 TDMA방식을 사용하는 무선통신 시스템에서 송, 수신 국부발진 주파수를 발생시키기 위하여 2개의 VCO가 필요하였던 종래 기술에 비하여 본 발명은 송수신을 겸용하여 사용할 수 있으므로 원가절감 및 서로 다른 국부발진 주파수의 계속적인 사용으로 인한 RF 신호의 상호 간섭을 완전히 배제할 수 있는 효과가 있다.In the present invention as described above, by connecting or disconnecting the capacitor (C4) to the LG resonant circuit by the TXEN control signal from the controller, the basic transmission and reception oscillation frequency is selected, and the voltage variable capacitor (Cv) by the input voltage Vin By determining the channel frequency by varying the < RTI ID = 0.0 > Since the transmission and reception can be used in combination, it is possible to completely eliminate mutual interference of RF signals due to cost reduction and continuous use of different local oscillation frequencies.

Claims (4)

인덕터(L)와, 제1캐패시터(C4)와, 상기 인덕터와 병렬 접속된 제2캐패시터(C2)와, 상기 제2캐패시터와 병렬 접속된 제3캐패시터(C1)와, 상기 제3캐패시터와 접지간에 직렬 접속되며 인가 전압에 따라 캐패시턴스가 가변되는 전압가변 캐패시터로 이루어진 공진회로(13)와; 상기 제3캐패시터의 일단자가 베이스에 접속되고 에미터에 타단자가 접속되어 상기 공진회로와 함께 발진회로를 형성하는 트랜지스터(Q2)와; 송신 및 수신 스위칭 제어신호(TXEN)와 송, 수신 발진 주파수 제어신호(CONT)를 발생하는 제어수단(11)과; 상기 송,수신 스위칭 제어신호가 입력되는 경우만 상기 제1캐패시터(C4)를 상기 인덕터(L)에 병렬 접속시키기 위한 캐패시터 스위칭 수단(12)과; 상기 송, 수신 발진 주파수 제어신호(CONT)와 상기 발진회로의 출력(Vco)에 응답하여 송, 수신 발진주파수에 대응한 입력전압(Vin)을 상기 전압가변 캐패시터(Cv)로 출력하기 위한 듀얼 주파수 합성기(15)로 구성되는 것을 특징으로 하는 캐패시터 스위칭 전압제어 발진기.Inductor L, first capacitor C4, second capacitor C2 connected in parallel with the inductor, third capacitor C1 connected in parallel with the second capacitor, and the third capacitor and ground A resonant circuit 13 made of a voltage variable capacitor connected in series and having a variable capacitance according to an applied voltage; A transistor (Q2) having one end of the third capacitor connected to the base and the other end connected to the emitter to form an oscillation circuit together with the resonance circuit; Control means (11) for generating transmission and reception switching control signals (TXEN) and transmission and reception oscillation frequency control signals (CONT); Capacitor switching means (12) for parallel connection of said first capacitor (C4) to said inductor (L) only when said transmission / reception switching control signal is input; Dual frequency for outputting the input voltage Vin corresponding to the transmission and reception oscillation frequency to the voltage variable capacitor Cv in response to the transmission and reception oscillation frequency control signal CONT and the output Vco of the oscillation circuit. Capacitor switching voltage controlled oscillator, characterized in that composed of a synthesizer (15). 제1항에 있어서, 상기 듀얼 주파수 합성기(15)후단에 입력전압(Vin)의 고주파 성분을 바이패스 시키기 위한 저역통과필터(16)를 더 포함하는 것을 특징으로 하는 캐패시터 스위칭 전압제어 발진기.The oscillator according to claim 1, further comprising a low pass filter (16) for bypassing the high frequency component of the input voltage (Vin) after the dual frequency synthesizer (15). 제1항에 있어서, 상기 송, 수신 스위칭 제어신호는 송신시에 출력되는 것을 특징으로 하는 캐패시터 스위칭 전압제어 발진기.The oscillator of claim 1, wherein the transmission and reception switching control signals are output at the time of transmission. 제1항에 있어서, 상기 캐패시터 스위칭 수단(12)은 상기 송수신 스위칭 제어신호가 베이스에 인가되고, 콜렉터에 상기 제1캐패시터(C4)와 저항(R3)이 접속된 PNP형 캐패시터(Q1)와, 상기 송수신 스위칭 제어신호가 저항(R4)을 통해 애노드에 인가되고 캐소드가 상기 PNP형 트랜지스터의 콜렉터에 접속된 스위칭 다이오드(DI)로 구성되는 것을 특징으로 하는 스위칭 전압제어 발진기.2. The capacitor switching device of claim 1, wherein the capacitor switching means 12 includes a PNP type capacitor Q1 to which the transmission / reception switching control signal is applied to a base, and the first capacitor C4 and the resistor R3 are connected to a collector; And a switching diode (DI) connected to the anode via a resistor (R4) and a cathode connected to a collector of the PNP type transistor.
KR1019940032893A 1994-12-06 1994-12-06 Capacitor switching voltage controlled oscillator KR0137913B1 (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR980010693A (en) * 1996-07-01 1998-04-30
US6724274B2 (en) 1999-10-29 2004-04-20 Murata Manufacturing Co., Ltd. Frequency-switching oscillator and electronic device using the same

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100414924B1 (en) * 1998-12-22 2004-02-14 서창전기통신 주식회사 Radio frequency transmission and reception system using voltage control diode
KR100385588B1 (en) * 2000-08-25 2003-05-27 삼성전기주식회사 Voltage Control Oscillator for transmitting/receiving type
KR100821126B1 (en) 2006-07-31 2008-04-11 한국전자통신연구원 An apparatus having a variable capacitor circuit with a linear capacitance variation
KR101666726B1 (en) * 2014-12-30 2016-10-17 중앙대학교 산학협력단 Sensor using micro structure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR980010693A (en) * 1996-07-01 1998-04-30
US6724274B2 (en) 1999-10-29 2004-04-20 Murata Manufacturing Co., Ltd. Frequency-switching oscillator and electronic device using the same

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