KR0137718B1 - Method for stripping a resist - Google Patents

Method for stripping a resist

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Publication number
KR0137718B1
KR0137718B1 KR1019940013483A KR19940013483A KR0137718B1 KR 0137718 B1 KR0137718 B1 KR 0137718B1 KR 1019940013483 A KR1019940013483 A KR 1019940013483A KR 19940013483 A KR19940013483 A KR 19940013483A KR 0137718 B1 KR0137718 B1 KR 0137718B1
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South Korea
Prior art keywords
resist
stripping
film
amorphous carbon
reflection film
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KR1019940013483A
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Korean (ko)
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KR960001909A (en
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문승찬
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김주용
현대전자산업주식회사
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Priority to KR1019940013483A priority Critical patent/KR0137718B1/en
Publication of KR960001909A publication Critical patent/KR960001909A/en
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Publication of KR0137718B1 publication Critical patent/KR0137718B1/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

본 발명은 반도체 제조공정의 레지스트 스트립 공정방법에 관한 것으로, 레지스트를 제작업하기 위하여, 레지스트를 스트립할 때 하부의 저반사막의 카본성질이 제거되는 것을 해결하기 위해 레지스트를 전면 노공하고, 알칼리 현상용액으로 현상시켜 레지스트만 제거하여 공정을 단순화시킴으로써 반도체소자의 고집적화를 용이하게 하는 기술이다.The present invention relates to a method for processing a resist strip in a semiconductor manufacturing process. In order to manufacture a resist, an entire surface of the resist is processed to solve the removal of the carbon property of the low reflective film at the time of stripping the resist. It is a technology that facilitates high integration of a semiconductor device by simplifying the process by developing only the resist by removing the resist.

Description

레지스트 스트립 공정방법Resist Strip Process

본 발명은 반도체 제조공정의 레지스트 스트립 공정방법에 관한 것으로, 특히 레지스트를 제작업하기 위하여 레지스트를 스트립(strip)할 때 하부의 저반 사막에 함유된 카본 성질이 제거되는 것을 해결할수 있도록 하는 레지스트 제거하는 방법에 관한 것이다.The present invention relates to a method for processing a resist strip in a semiconductor manufacturing process, and more particularly, to remove a resist to solve the removal of the carbon properties contained in the lower half desert when stripping the resist in order to manufacture the resist. It is about a method.

일반적으로 알루미늄(Aluminum)이나 텅스텐 실리사이드(W-silicide)등과 같이 고반사도를 갖는 막(film)상에서 광 리소그라피 방식에 의하여 미세패턴을 형성하고자 할 때 입사하는 빛과 기판으로부터 반사되는 빛간의 광간섭현상에 의한 콘트라스트 저하 및 단차상에서 난반사에 의한 나칭(Notching)현상등이 발생하게 된다.In general, optical interference between incident light and light reflected from a substrate when a micropattern is formed by an optical lithography method on a film having high reflectivity such as aluminum or tungsten silicide (W-silicide) Decrease in contrast and notching due to diffuse reflection.

종래에는 이러한 현상을 개선하기 위하여, 기판으로 부터의 반사도를 줄이기 위해 저반사막으로 200 ∼ 1000Å 두께의 티타늄(Ti), 티타늄 나이트라이드(TiN), 실리콘(Si), 실리콘 라이트라이드(Si3N4또는 SiONX) 등의 무기반사막을 고반사막 위해 증착시켜 사용하였다.Conventionally, in order to improve such a phenomenon, in order to reduce the reflectance from the substrate, 200 to 1000 티타늄 thick titanium (Ti), titanium nitride (TiN), silicon (Si), silicon nitride (Si 3 N 4 ) as a low reflection film Or an inorganic reflective film such as SiON X ) was used for the high reflective film.

그러나, 노광파장이 원자외선(ＤＵＶ: λ=248nm)으로 점점 짧아짐에 따라서 이와같은 무기반사막의 무기물질은 ＤＵＶ에 대하여 투과하는 성질을 갖게 되므로써 저반사막으로서 역할을 할 수 없게 된다.However, as the exposure wavelength becomes shorter with far ultraviolet rays (DV: lambda = 248 nm), the inorganic material of such an inorganic reflective film has a property of transmitting to DV, and thus cannot serve as a low reflective film.

이를 해결하기 위하여, 고반사막 상부에 저반사막으로 비정질 카본(armorphous Carbon)을 최적화의 조건에서 증착시켜 ＤＵＶ파장에 대한 굴절율(n), 흡수계수(k) 및 막두께(d)를 조절하면 저반사막의 효과가 증가시켰다. 여기서, 상기 비정질 카본은, 웨이퍼 온도 = 300℃, 파우더 = 1.2KW, Ar 압력=0.66Pa(5mT), Ar 플로우 비(flow rate) = 100 ml/min 분위기에서 카본을 약 100 초 동안 스퍼터링하여 300 ∼ 700Å정도로 증착한다.To solve this problem, low-reflective film is deposited on the high-reflective film with low-reflective film by adjusting the refractive index (n), absorption coefficient (k), and film thickness (d) with respect to DW wavelength. Increased the effect. The amorphous carbon may be formed by sputtering carbon for about 100 seconds at a wafer temperature of 300 ° C., a powder of 1.2 KW, an Ar pressure of 0.66 Pa (5 mT), and an Ar flow rate of 100 ml / min. The deposition is carried out at about 700 mW.

그러나, 저반사막의 비정질 카본 증착후 레지스트를 도포하여 패턴을 형성할 때, 레지스트를 도포한 후, 레지스트 박막의 결함 및 두께의 균일도가 저하되거나, 레지스트를 노광 및 현상한 후에 선폭크기(CD)가 스펙(spec)에 못 미치거나, 채턴중첩 정확도가 스펙에 못 미칠 경우에 있어 실시되는 레지스트의 재작업시 레지스트만을 제거하는 스트립 공정은, O2플라즈마로 레지스트를 스트립 하때 카본이 주성분인 레지스트 뿐만 아니라 저반사막의 비정질 카본이 CO2개스로 환원되어 동시에 제거되는 문제가 발생한다.However, when forming a pattern by applying a resist after amorphous carbon deposition of a low reflection film, after applying the resist, the uniformity of defects and thicknesses of the resist thin film is reduced, or after the resist is exposed and developed, the line width (CD) is increased. The strip process that removes only the resist during reworking of the resist, which is performed when the spec is under specifications or when the chatter overlap accuracy is below the spec, is not only a carbon-based resist when stripping the resist with O 2 plasma. A problem arises in that the amorphous carbon of the low reflection film is reduced to CO 2 gas and simultaneously removed.

그로인하여, 레지스트를 제거후 고반사막 상에 저반사막인 비정질 카본을 다시 증착시켜야 하므로 공정이 복잡해지는 문제가 되고 있다.Therefore, since the amorphous carbon, which is a low reflection film, must be deposited again on the high reflection film after removing the resist, the process becomes complicated.

따라서, 본 발명은 상기한 종래기술의 문제점을 해결하기 위하여, 레지스트를 제거하는 스트립 공정시 레지스트 하부막에 형성된 저반사막인 비정질 카본의 손상없이 레지스트를 스트립함으로써 저반사막층의 재증착공정을 생략할 수 있어 고집적화에 따른 반도체소자의 제조공정을 단순화시킬 수 있는 레지스트 스트립 공정방법을 제공하는데 그 목적이 있다.Therefore, in order to solve the above-mentioned problems of the prior art, the step of stripping the resist without damaging the amorphous carbon, which is a low reflection film formed on the resist underlayer during the stripping process of removing the resist, may eliminate the redeposition process of the low reflection film layer. The purpose of the present invention is to provide a resist strip processing method that can simplify the manufacturing process of a semiconductor device due to high integration.

이상의 목적을 달성하기위해 본 발명에 따른 레지스트 스트립 공정방법은,In order to achieve the above object, a resist strip processing method according to the present invention,

알루미늄 이나 텅스텐 실리사이드 등과 같이 고반사막 상부에 저반사막인 비정질 카본막이 증착되고, 그 상부에 도포된 레지스트를 스트립하는 공정방법에 있어서, 상기 레지스트를 전면 노광하는 공정과, 상기 레지스트를 알칼리 현상용액으로 현상시켜 제거하는 공정을 포함하는 것을 특징으로한다.A process for stripping an amorphous carbon film, which is a low reflection film, on top of a high reflection film such as aluminum or tungsten silicide, and stripping the resist applied thereon, the step of exposing the resist to full surface, and developing the resist with an alkaline developer solution. Characterized in that it comprises a step of removing.

이하, 본 발명을 상세히 설명하기로 한다.Hereinafter, the present invention will be described in detail.

상기한 바와같이 알루미늄(Aluminum)이나 텅스텐 실리사이드(W-silicide)등과 같이 고반사막 상부에 300∼700Å정도의 비정질 카본을 저반사막으로 증착시키고, 레지스트를 도포한 다음, 노광 및 현상공정으로 레지스트 패턴을 형성할 때 레지스트 재작업을 실시해야 하는 경우에 본 발명이 적용된다.As described above, amorphous carbon of about 300 to 700 kPa is deposited on the high reflective film such as aluminum or tungsten silicide (W-silicide) as a low reflective film, a resist is applied, and then a resist pattern is formed by an exposure and development process. The present invention applies to cases where a resist rework has to be performed when forming.

본 발명의 제 1 실시예는, 재작업을 해야하는 레지스트에 G선, I선으로 예정된 노광 에너지 (예를들어 약 200∼400mj, ＤＵＶ의 경우 10∼40 mj 정도의 노광에너지)로 전면 노광한 다음 TMAH(Tetramenthy Ammonia Hydrogem)를 기본으로 하는 알칼리 현상용액에 약 60초 정도 다이나믹(dynamic) 또는 푸들(puddle) 방식에 의하여 레지스트만 제거하는 방법이다. 본 발명의 제 2 실시예는, 재작업을 해야하는 레지스트를 전면노광 공정없이 아세톤 또는 솔벤트와 같이 강한 현상용액으로 레지스트만을 쉽게 제거하는 방법이다.In a first embodiment of the present invention, the resist to be reworked is subjected to full exposure with a predetermined exposure energy (e.g., about 200 to 400 mj, or about 10 to 40 mj in the case of DW) of the G-ray and I-ray. It is a method of removing resist only by dynamic or puddle method for about 60 seconds to alkaline developing solution based on TMAH (Tetramenthy Ammonia Hydrogem). The second embodiment of the present invention is a method of easily removing only the resist with a strong developing solution such as acetone or solvent without the overexposure process of the resist to be reworked.

상기의 제 1 실시예와 제 2 실시예는, 디핑(Dipping), 스핀(Spin)에 의한 다이나믹 방식이나 푸들방식 등 어느것도 가능하며, 약 60초 정도의 현상공정과 약 20 ∼ 30 초 간의 순수(ＤI water)에 의한 세척공정 및 웨이퍼 드라이 공정을 후속공정으로 필요로 한다.The first and second embodiments described above can be any of a dipping method, a dynamic method using a spin, or a poodle method, and may include a developing process of about 60 seconds and a pure water of about 20 to 30 seconds. A washing step with (DI water) and a wafer drying step are required as subsequent steps.

상기한 바와 같이 본 발명은, 왯 스트립(Wet strip) 방식에 의하여 비정질 카본상의 레지스트를 제거하므로서 비정질 카본의 비손상에 의해서 재작업시 비정질 카본을 재증착하지 않게 되므로서 공정의 단순화 및 시간 절약효과를 가져올 수 있다.As described above, the present invention simplifies the process and saves time by eliminating the redeposition of amorphous carbon when reworking the amorphous carbon by removing the resist of the amorphous carbon by a wet strip method. Can be imported.

Claims (3)

알루미늄이나 텅스텐 실리사이드 등과 같이 고반사막 상부에 저반사막인 비정질 카본막이 증착되고, 그 상부에 도포된 레지스트를 스트립하는 공정방법에 있어서, 상기 레지스트를 전면 노광하는 공정과, 상기 레지스트를 알칼리 현상용액으로 현상시켜 제거하는 공정을 포함하는 레지스트 스트립 공정방법.A method of stripping an amorphous carbon film, which is a low reflection film, on top of a high reflection film such as aluminum or tungsten silicide, and stripping the resist applied thereon, the step of exposing the resist to full surface, and developing the resist with an alkaline developer solution. Resist strip processing method comprising the step of removing by. 제 1항에 있어서, 상기 전면노광공정은 G,I 선을 이용하여 200 ∼ 400 mj 의 노광 에너지로 실시하는 것을 특징으로하는 레지스트 스트립 공정방법.The method of claim 1, wherein the front exposure step is performed using exposure energy of 200 to 400 mj using G, I lines. 제 1항에 있어서, 상기 전면노광공정은 ＤUV를 이용하여 10 ∼ 40 mj 정도의 노광에너지로 실시하는 것을 특징으로하는 레지스트 스트립 공정방법.The resist strip process according to claim 1, wherein the front exposure process is performed with exposure energy of about 10 to 40 mj using DUV.
KR1019940013483A 1994-06-15 1994-06-15 Method for stripping a resist KR0137718B1 (en)

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KR0137718B1 true KR0137718B1 (en) 1998-04-27

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