KR0131473Y1 - Vacuum deposition plating apparatus - Google Patents

Abstract

The present invention relates to a vacuum deposition plating apparatus in which arc ion plating and HCD ion plating are performed in one chamber, and sputtering plating can be simultaneously performed.

In order to improve the functional problems caused in the aspect of the installation and the effect of the plating that occurs when performing only one plating in a conventional chamber,

The first chamber (A) and the second chamber (B) for sputter plating can be performed at the same time by performing arc ion plating and HCD ion plating at the same time, thereby preventing economic losses due to mechanical equipment. It is to provide an ion plating apparatus excellent in the adhesion of the film.

Description

Vacuum Deposition Plating Equipment

Figure 1 (a) is a schematic diagram showing the deposition plating principle.

(b) is a schematic diagram showing the principle of arc charge.

(c) is a schematic diagram showing the principle of HCD plating.

(d) is a schematic diagram showing the principle of sputtering plating.

Figure 2 is a schematic diagram showing the operation principle of the vacuum deposition plating apparatus of the present invention.

3 is a block diagram showing a vacuum deposition plating process of the present invention.

Figure 4 (a) is a perspective view showing a vacuum deposition plating apparatus of the present invention.

(b) is a plan view showing the device of the present invention.

(c) is a front view showing the device of the present invention.

* Explanation of symbols for main parts of the drawings

1: arc source 1a: ion beam source

2: HCD source 3: container

4: throttle valve 5: magnetron source

6: viewing window 7: vacuum pump

A: first chamber B: second chamber

H: heater I: atoms of deposited material

M: Molecules of the deposition material P: Plasma region

The present invention relates to a vacuum deposition plating apparatus, and more particularly, to an apparatus capable of simultaneously performing arc ion plating and HCD (hollow cathode discharge) heating and sputtering plating.

Vacuum deposition plating is classified into physical vapor deposition and chemical vapor deposition, and physical vapor deposition may be further classified into evaporation plating, ion plating and stuffing plating.

Ion plating is further subdivided into arc ion plating, HCD ion plating and next electrode ion plating. They are used for different purposes and have different advantages and disadvantages.

In conventional vacuum deposition, plating apparatuses could only perform one plating in one chamber.

That is, the arc ion plating apparatus and the HCD ion plating apparatus are operated separately from each other.

Therefore, there is a problem that it is difficult to improve the coating effect due to excessive installation costs, and also inherent in each plating principle, because it is necessary to purchase a new device necessary for plating different from the one already performed.

In the case of arc heating, the coating surface is not smooth, and the yield of the base material is bad.

The present invention improves the above problems of the prior art, the first object of the present invention is to install a vacuum pump which can be shared by two or more chambers (low pressure, high vacuum plating chamber to be plated), both chambers By providing a throttle valve that can maintain the pressure in the chamber differently, to provide a vacuum deposition plating apparatus capable of simultaneously performing arc ion plating and HCD ion plating in the first chamber,

A second object of the present invention is to provide a vacuum evaporation plating apparatus capable of simultaneously performing sputter plating in the second chamber and plating in the first chamber.

A third object of the present invention is to provide an ion plating apparatus excellent in adhesion of a film by providing an ion beam generator in a first chamber.

The present invention provides an arrangement of an arc source and an HCD source in the chamber so that the arc ion plating and the HCD ion plating can be simultaneously performed in the first chamber, and the sputter plating is performed in the second chamber. It has one vacuum pump and throttle valve to make it work.

The vacuum pump is shared by a first chamber capable of simultaneously performing arc charging and HCD ion plating, and a second chamber performing sputtering plating. Since the pressure required in the first chamber and the second chamber may be different from each other, the throttle valve is provided in the present invention.

In general, the deposition plating principle is to place an object to be coated (the object to be coated) in the chamber appropriately, and to place the coating material (the material to be deposited) beneath it, and to place a heating device under the base material to heat and evaporate the coating material. do. The base material is melted by the heating device and then begins to evaporate. When the coating material evaporates, the molecules of the coating material are separated from the coating material to move the molecules, and the coating material is coated by approaching and attaching the object to be coated by the molecular kinetic energy.

In addition, the arc ion plating principle is to properly position the object to be coated in the chamber and to install the coating material in the arc ignitor. In the present invention, in order to simultaneously perform HCD ion plating in the first chamber, they are placed in a space above the middle of the first chamber, and the devices required for HCD ion plating are placed in the space below the middle.

An arc igniter generates an arc in the coating material such that the arc is continuously generated on the coating material. That is, the coating material itself serves as an arc source. When an arc is generated, the coating material melts instantaneously and ionizes to move through the chamber, attaching to the surface of the object to be coated with a strong impact to form a coating.

The chamber is filled with an inert gas, the pressure is maintained at a low pressure close to a vacuum of about 10 ^-2 to 10 ^-3 torr, and generates an arc. At this time, the temperature of the arc is a high temperature of about 4 × 10 ^{3 ~} 4 × 10 ⁴ ° K.

In addition, a voltage of about 800V to 1000V is applied to the object to be coated. An arc spot, initially generated by an arc igniter, melts and ionizes the coating material as it moves over the coating surface at a rate of about 100 m / sec. These ions adhere to the coated object and are coated. A feature of arc ion plating is that, since the coating material is installed in the arc igniter, a container containing the coating material is unnecessary, unlike HCD ion plating.

The HCD ion plating principle installs a container containing a coating material on the bottom surface of the first chamber, and the object to be coated is placed at a suitable position below the middle of the chamber, so that the arc ion plating can be performed simultaneously.

The HCD source is installed at the bottom of the chamber wall so that hot electrons emitted from the HCD source can collide with the substrate.

In the HCD source, a hollow tantalum (Ta) rod is installed in a pipe in which one end is opened. The space between the tantalum rod and the pipe is filled with an inert gas injected into the first chamber. Form a state. This plasma is distinguished from other plasma states formed in the first chamber. When the voltage is applied with the carbon rod as the cathode, it reacts with the gas in the plasma state. That is, when argon ions (Ar ⁺ ) in the plasma state collide with the tantalum rods, the tantalum rods emit hot electrons at a high temperature of 2000 ° C or higher. The flow of these hot electrons is deflected into a container containing the coating material, causing the hot electrons to collide with the coating material, thereby melting the coating material.

When the coating material begins to melt, the atoms escape and evaporate, and in order for these atoms to become ions and adhere to the coated object, the atmosphere in the chamber must be in a plasma state during the evaporation process. Electrons present in the plasma state collide with the atoms of the coating material to evaporate, causing the atoms of the coating material to become ionic. This process is an ionization process. In this way, the coating material becomes an ion and the ion is attached to the object to be coated and coated.

Neutral gases, ions, and electrons coexist in the plasma, and the total number of ions and electrons is almost the same, which is neutral.

The term plasma means ionized gas.

In the space between the tantalum rod and the pipe, an inert gas forms a plasma state, and underneath the object to be coated, atoms of the coating material form a plasma.

In the present invention, sputtering plating is performed in the second chamber.

The second chamber injects an inert gas, but the pressure is about 10 ^-4 torr, it may maintain a lower pressure than the first chamber.

The second chamber, like the first chamber, creates a plasma atmosphere of the inert gas.

A high voltage is applied to the coating and the atoms are released by the magnetron source. The escaped atoms strongly collide with the inert gas ions in the plasma state, forming a separate plasma region.

When voltage is applied using the object to be coated as a cathode, a coating material ionized by plasma is attached to form a film.

In the prior art, only one plating can be performed in each chamber, but the present invention can simultaneously perform arc ion plating and HCD ion plating in one chamber, and simultaneously perform sputter plating in another chamber. Can be. For this purpose, a separate vacuum pump was used for each chamber, and a throttle valve was installed at a portion adjacent to the exhaust port of the chamber in case the pressure in the chamber needs to be different.

The throttle valve plays a very important role in maintaining the pressure in the chamber at low pressure close to vacuum before starting plating.

That is, in the viscous flow state in which the pressure of the fluid is 10 ^-3 Torr or more, the length of the tube of the vacuum pump becomes an important parameter in the displacement, and the evacuation continues and the pressure in the chamber is 10 ^-3 Torr or less. That is, in a molecular flow state close to high vacuum, the diameter of the tube has a greater influence on the displacement than the length of the tube. Thus, the throttle valve is for adjusting the diameter of the tube in the molecular flow state.

In addition, the present invention improves the adhesion of the coated film by increasing the molecular kinetic energy of the coating material ions by installing an ion beam generator in the first chamber.

Hereinafter, as an embodiment shown in the accompanying drawings, the present invention will be described in more detail.

FIG. 1 (a) is a schematic diagram showing the principle of deposition plating.

FIG. 1B is a schematic diagram showing the principle of arc ion plating.

The to-be-coated object M is installed in a suitable position in the 1st chamber A, and the coating material T is attached to the arc igniter I. In this invention, in order to perform HCD ion plating simultaneously in the 1st chamber A, it installs in the space more than the intermediate part of the 1st chamber A. As shown in FIG. The arc igniter I generates an arc in the coating material T such that the arc is continuously generated on the coating material T.

That is, the coating material T itself serves as an arc source. When the arc is generated, the coating material (T) is instantaneously melted and ionized so as to adhere to the surface of the object to be coated (M) with a strong impact while rapidly moving the space in the first chamber (A).

At this time, the first chamber A is filled with an inert gas such as argon (Ar), the pressure is maintained at a vacuum degree of about 10 ^-2 to 10 ^-3 Torr, and the temperature is maintained at about 450 ℃ high temperature. A voltage of about 800V to 1000V is applied to the object to be coated (M). The arc spot initially generated by the arc igniter I dissolves and ionizes the coating material T while moving the surface of the base material T at a speed of about 100 m / sec. These ions attach to the coated object M to form a film. In the arc ion plating, since the coating material T is combined with the arc igniter I, a container for accommodating the coating material T is unnecessary unlike the HCD ion plating described below.

FIG. 1C is a schematic diagram showing the principle of HCD ion plating.

The container 3 containing the coating material T is installed at the bottom of the bottom surface of the first chamber A, and the object to be coated M is disposed at an appropriate position in the intermediate or lower space in the first chamber in the chamber. Therefore, the first chamber A of the present invention is designed to perform arc ion plating in a space above the middle and to perform HCD ion plating in a space below the middle.

The HCD source (H) is installed at the lower end of the wall of the first chamber (A), and the hot electrons flow through the magnetic field so that the hot electrons emitted from the HCD source (H) can collide with the coating material (T) in the container (3). Deflect.

The coating material (T) is melted instantaneously by hot electrons and becomes an atomic state, thereby leaving the coating material (T) and causing molecular movement in the first chamber (A). These atoms are ionized by colliding with electrons in the plasma in the first chamber A, and form a plasma region in any space below the object to be coated. The ions of the coating material (T) are cations, and if the voltage of the coating object (M) is applied to the cathode, the coating material (T) ions in a plasma state collide with the surface of the coating object (M) to form a film. will be.

FIG. 1D is a schematic diagram showing the sputtering plating principle performed in the second chamber B. As shown in FIG.

The object to be coated M is disposed above the second chamber, and the coating material T is disposed below. An inert gas such as argon is injected into the second chamber to maintain a plasma state. The pressure in the chamber is maintained at about 10 ⁻⁴ torr, but is not at the same high temperature as that of the first chamber which performs ion plating. The coating material T is energized so that the coating material leaves the atomic state due to the atmosphere in the chamber.

The dissociated atoms are in a plasma state in a space adjacent to the coated object M, and these ions are attached to the coated object M to form a film.

The first chamber A and the second chamber B are connected to one vacuum pump. In case the pressure in both chambers needs to be different from each other, in the present invention, the diameter of the pipe can be adjusted by installing the throttle valve 4 at a portion adjacent to the exhaust ports of both chambers.

2 is a schematic view showing the operation principle of the vacuum deposition plating apparatus of the present invention.

In the first chamber A, the arc source 1 and the HCD source 2 are disposed on the wall surface of the first chamber A in the vertical direction. The object to be coated M for arc ion plating is disposed at a distance adjacent to the position of the arc source 1, and the object to be coated M for HCD ion plating is provided below.

At the bottom of the chamber, a container 3 containing a coating material T for plating HCD ions is installed.

In selected embodiments of the present invention, two arc sources, two HCD sources, and two containers are provided, but the present invention is not limited thereto.

3 is a flowchart showing the sequence of the vacuum deposition plating process.

First, the object to be coated is cleaned to remove impurities on the surface of the object to be coated, and then the object to be coated is set in the first chamber A or the second chamber B. The waste gas remaining in the first chamber A or the second chamber B is exhausted until the pressure is about 5 × 10 ⁻⁶ Torr. The reason for this is to remove impurities other than the coating material in the chamber.

The object to be coated is heated to about 500 ° C. to remove oxides or other harmful substances remaining on the surface of the object to be coated. In this process, the exhaust continues to remove waste.

After this process, an inert gas such as argon is injected into the chamber to perform plasma cleaning.

The deposition plating is performed by operating the arc source, the HCD source or the magnetron source. At this time, the thickness of the coating film is about 3 to 5㎛. During plating, an intermediate layer is formed on the surface of the object to be coated in order to enhance the adhesion of the film. In other words, the initial coating is applied as a part of forming the final coating before forming the final coating.

For example, coating is performed initially with titanium (Ti) before coating with titanium nitride (Ti N).

In the present invention, since the arc ion plating and the HCD ion plating can be performed simultaneously in the same chamber, the formation of the intermediate layer is very advantageous.

When the coating is finally completed, the coated object is cooled.

Figure 4 (a) is a perspective view showing a vacuum deposition plating apparatus of the present invention.

Two viewing ports are installed on the front side of the first chamber and the second chamber to observe the progress of plating.

(B) is a top view of (a). Referring to the drawings, it can be seen that the throttle valve is installed near the exhaust ports of the first chamber and the second chamber.

(C) is a front view of (a).

While the present invention has been described according to the drawings showing selected embodiments of the present invention, it will be understood by those skilled in the art that various embodiments are not limited to the above embodiments.

The present invention as described above by installing a vacuum pump that can be shared between the two chambers, and by installing a throttle valve that can maintain the pressure in both chambers differently, arc ion plating and HCD ion plating in the first chamber Simultaneously, the second chamber can be sputtered at the same time, thereby improving only the disadvantages of arc ion plating and the disadvantages of HCD ion plating, thereby achieving high quality plating. In addition, there is an effect of facilitating the coating of the multilayer film while improving productivity and greatly reducing the cost.

Claims (4)

The first chamber (A) capable of simultaneously or selectively performing arc ion plating and HCD ion plating, the second chamber (B) capable of performing sputter plating exclusively, and the both chambers can be shared. Vacuum deposition plating apparatus, characterized in that the vacuum pump (7) is installed, and the throttle valve (4) is installed to maintain the pressure in both chambers differently. According to claim 1, wherein the arc source (1) and the HCD source (2) is located in the first chamber (A) up and down separately and the object to be coated (M) is disposed adjacent to each source (1) (2) , The vacuum deposition plating apparatus, characterized in that the bottom surface in the chamber is installed a container (3) containing the coating material (T) for plating HCD ions. The method of claim 1, wherein the inert gas is injected into the second chamber B to maintain the plasma state, and the sputter plating can be applied by applying a voltage to the coating material T at an internal pressure of about 10 ^-4 Torr. Vacuum deposition plating apparatus characterized in that. According to claim 1, wherein the intermediate layer of about 3 ~ 5μ is formed on the coated object subjected to ion washing after heating in the process of vacuum deposition on the coated object set in each chamber (A) (B). Vacuum deposition plating apparatus.