KR0131263B1 - Method for fabricating a photomask - Google Patents
Method for fabricating a photomaskInfo
- Publication number
- KR0131263B1 KR0131263B1 KR1019940040772A KR19940040772A KR0131263B1 KR 0131263 B1 KR0131263 B1 KR 0131263B1 KR 1019940040772 A KR1019940040772 A KR 1019940040772A KR 19940040772 A KR19940040772 A KR 19940040772A KR 0131263 B1 KR0131263 B1 KR 0131263B1
- Authority
- KR
- South Korea
- Prior art keywords
- pattern
- photo mask
- size
- present
- photomask
- Prior art date
Links
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
제1도는 본 발명의 8가지의 블라인드 셋팅을 달리하여 노광시킨 후 현상한 웨이퍼상에서의 패턴모양을 나타내는 도면.1 is a view showing a pattern on a wafer developed after exposure with different eight blind settings of the present invention.
제2도는 본 발명의 모의패턴(Dummy Pattern)이 실시된 포토 마스크의 예시도.2 is an exemplary view of a photo mask to which the dummy pattern of the present invention is applied.
제3a도, 제3b도, 제3c도, 제3d도, 제3e도, 제3f도, 제3g도, 제3h도는 본 발명의 포토 마스크에 의하여 실시되는 8가지의 블라인드 셋팅예를 나타내는 도면.3A, 3B, 3C, 3D, 3E, 3F, 3G, and 3H show eight examples of blind settings performed by the photomask of the present invention.
＊ 도면의 주요부분에 대한 부호의 설명＊ Explanation of symbols on main parts of drawing
1 : 패턴 2 : 모의패턴(Dummy Pattern)1: Pattern 2: Dummy Pattern
본 발명은 반도체 소자의 제조시에 포트마스크 패턴의 균일화(uniformity)를 위한 포토 마스크 제작방법에 관한 것으로, 특히 웨이퍼 가장자리 부분의 비노광 지역이 현상(developing)공정시에 근접효과(proximity effect)에 의하여 패턴의 선폭이 변화되는 것을 방지한 포토 마스크 제작방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of fabricating a photomask for uniformity of a port mask pattern in the manufacture of semiconductor devices. In particular, the non-exposed areas at the edges of wafers are affected by the proximity effect during development The photomask manufacturing method which prevented the line width of a pattern from changing by this is related.
포토 마스크 패턴 형성시 웨이퍼 가장자리 부분의 넓은 비노광지역과 필드 가장자리 패턴과의 사이에 현상(developing)공정중 선폭변화 즉, 근접효과(proximity effect)에 의한 감광막 패턴의 선폭이 비정상적으로 작아지는 선폭축소 현상이 매우 흔하게 발생하여 왔다.Line width reduction in which the line width of the photoresist pattern is abnormally reduced due to the change in line width during development, that is, the proximity effect between the wide non-exposed area of the wafer edge and the field edge pattern when forming the photo mask pattern. The phenomenon has been very common.
따라서 균일성 있는 패턴이 요구되는 고집적 장치에서는 이와같은 근접효과에 의한 선폭변화의 문제점을 개선한 포토 마스크 제작방법이 필요로 되어 왔다.Therefore, there is a need for a photomask fabrication method that improves the problem of line width change caused by the proximity effect in a highly integrated device requiring a uniform pattern.
본 발명은 웨이퍼 엣지쪽의 넓은 비노광지역과 필드엣지패턴과의 사이에 발생하는 선폭변화를 방지한 포토 마스크 제작방법을 제공하는 데에 그 목적이 있다.SUMMARY OF THE INVENTION An object of the present invention is to provide a method of fabricating a photo mask which prevents a line width change occurring between a wide non-exposed area on a wafer edge side and a field edge pattern.
보다 구체적으로 본 발명은 포토 마스크 제작방법에 있어서, 프러덕트 다이 패턴을 중심으로 4개의 더미패턴(dummy pattern, 모의패턴이라 함)을 필드모양에 따라 선택적으로 입력하는 단계와, 모의패턴이 입력된 포토 마스크에서 필드의 모양에 따라 블라인드 셋팅을 달리하는 단계를 포함하는 것으로, 모의패턴이 간격(D size)이 100μm에서 150μm 이내로, 모의패턴의 폭(A size)이 20μm로, 모의패턴의 길이(B, C size)는 프러덕트 다이 사이즈와 동일하게 하여서 된다.More specifically, the present invention provides a method for manufacturing a photo mask, the method comprising selectively inputting four dummy patterns (called mock patterns) around a product die pattern according to a field shape, and a mock pattern being input. It includes the step of varying the blind setting according to the shape of the field in the photo mask, the mock pattern is the distance (D size) within 100μm to 150μm, the width (A size) of the mock pattern is 20μm, the length of the mock pattern ( B, C size) should be the same as the product die size.
이와같은 본 발명 포토 마스크에 의하여 웨이퍼를 노광시킴에 있어서는 엣지 쪽의 필드에서 모의패턴을 8가지의 블라인드를 적절하게 셋팅시킨뒤 노광함으로서 소기의 목적을 달성한다.In exposing the wafer by the photomask of the present invention as described above, the desired purpose is achieved by exposing the phantom pattern in the field on the edge side by appropriately setting eight blinds.
이하 본 발명의 바람직한 실시예를 첨부도면을 참조하여 보다 상세하게 설명한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.
첨부도면중 제1도는 본 발명은 8가지의 블라인드 셋팅을 달리하여 노광시킨후 현상한 웨이퍼상에서의 패턴모양을 나타내고, 제2도는 본 발명의 모의패턴을 포함한 포토 마스크를 예시하며, 제3a도, 제3b도, 제3c도, 제3d도, 제3e도, 제3f도, 제3g도, 제3h도는 본 발명의 8가지의 블라인드 셋팅이 실시된 예를 나타낸다.In the accompanying drawings, FIG. 1 shows the pattern of the wafer on the developed wafer after exposure to eight different blind settings. FIG. 2 shows a photo mask including the simulation pattern of the present invention. 3b, 3c, 3d, 3e, 3f, 3g, and 3h show examples of eight blind settings of the present invention.
본 발명의 모의패턴을 포함한 포토 마스크 제작방법은 엣지부분의 프러덕트 다이패턴(1)을 중심으로 4개의 모의패턴(2)을 필드모양에 따라 선택적으로 입력하는 단계와, 모의패턴(2)이 입력된 포토 마스크에서 필드의 모양에 따라 블라인드 셋팅을 달리하는 단계를 포함하여서 되는 것이다.The photomask manufacturing method including the simulation pattern of the present invention comprises the steps of selectively inputting the four simulation patterns (2) according to the field shape around the product die pattern (1) of the edge portion, and the simulation pattern (2) is And changing the blind settings according to the shape of the field in the input photo mask.
이와같은 본 발명에 있어서, 첨부도면 제2도에서 도시된 바와 같이 모의패턴(2)의 프러덕트다이(1)와의 간격(D size)은 블라인드 셋팅지역을 고려하여 최소 100μm 이상 이격되게 하고 현상(developing)시에는 150μm 이격되지 않도록 하며, 모의패턴(2)의 폭(A size)은 20μm 정도로 하고 길이(B, C size)는 프러덕트 다이(1)사이즈와 동일하게 제작하여서된다.In the present invention, as shown in Figure 2 of the accompanying drawings, the distance (D size) with the product die 1 of the simulation pattern (2) is spaced at least 100μm or more in consideration of the blind setting area and the phenomenon ( During the development, the gap is not spaced 150 μm. The width A size of the simulation pattern 2 is about 20 μm, and the lengths B and C are made to be the same as the size of the product die 1.
이와같은 포토 마스크의 제작방법은 블라인드 셋팅에 의하여 효과적으로 그 목적을 달성하게 된다.Such a method of manufacturing a photo mask effectively achieves its purpose by blind setting.
예를들면 제1도에서 도시된 바와 같은 8가지의 블라인드 셋팅을 달리하여 노광시킨후 현상한 웨이퍼상에서의 패턴모양을 형성기 위에서는 제3a도에서 보는 바와같이 비노광 지역에 블라인드 셋팅이 불필요한 경우(노광부분에 0을 표시)와, 제3b도는 웨이퍼의 하단부에 가상패턴을 주기 위하여 블라인드 셋팅한 경우(노광부분에 1을 표시)와, 같은 방법으로 제3c도는 우측(노광부분에 '2을 표시)에, 제3d도는 상측(노광부분에 3을 표시), 제3e도는 좌측(노광부분에 4를 표시)에, 제3f도는 하단과 우측(노광부분에 5를 표시)에 동시에, 제3g도는 상단과 좌측 지역(노광부분에 6을 표시)에, 제3h도는 좌단과 하단 지역(노과웁분에 7을 표시)에 각각 블라인드 셋팅을 실시하여서 된다. 따라서, 본 발명은 웨이퍼 가장자리 부분의 비노광부분에 발생되던 근접효과에 의한 패턴 사이즈의 변화를 줄일 수 있게 되는 것이다.For example, when the eight different blind settings as shown in FIG. 1 are exposed by different exposures, the pattern shape on the developed wafer is formed. As shown in FIG. In the same way as in the case where the blind is set in order to give a virtual pattern to the lower end of the wafer (shown 1 in the exposed portion), and in the same way, the figure 3c shows the right side ('2 in the exposed portion). 3d is at the upper side (showing 3 in the exposed portion), 3e is at the left side (showing 4 in the exposed portion), 3f is at the bottom and right side (showing 5 in the exposed portion), and 3g is The blinds are set in the upper and left areas (6 on the exposed part) and in the left and lower areas (7 on the noowoob) in Fig. 3h. Therefore, the present invention can reduce the change in the pattern size due to the proximity effect generated in the non-exposed portion of the wafer edge portion.
Claims (4)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940040772A KR0131263B1 (en) | 1994-12-30 | 1994-12-30 | Method for fabricating a photomask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940040772A KR0131263B1 (en) | 1994-12-30 | 1994-12-30 | Method for fabricating a photomask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR960024656A KR960024656A (en) | 1996-07-20 |
| KR0131263B1 true KR0131263B1 (en) | 1998-04-14 |
Family
ID=19406304
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019940040772A KR0131263B1 (en) | 1994-12-30 | 1994-12-30 | Method for fabricating a photomask |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR0131263B1 (en) |
-
1994
- 1994-12-30 KR KR1019940040772A patent/KR0131263B1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR960024656A (en) | 1996-07-20 |
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