KR0128025B1 - Rapid thermal processing apparatus with cooling device - Google Patents

Rapid thermal processing apparatus with cooling device

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Publication number
KR0128025B1
KR0128025B1 KR1019940010552A KR19940010552A KR0128025B1 KR 0128025 B1 KR0128025 B1 KR 0128025B1 KR 1019940010552 A KR1019940010552 A KR 1019940010552A KR 19940010552 A KR19940010552 A KR 19940010552A KR 0128025 B1 KR0128025 B1 KR 0128025B1
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South Korea
Prior art keywords
gas
cooling
cooling device
reaction
pipe
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KR1019940010552A
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Korean (ko)
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KR950034449A (en
Inventor
이경수
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양승택
한국전자통신연구원
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Priority to KR1019940010552A priority Critical patent/KR0128025B1/en
Priority to JP6305096A priority patent/JP2886101B2/en
Publication of KR950034449A publication Critical patent/KR950034449A/en
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Publication of KR0128025B1 publication Critical patent/KR0128025B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The gas cooling device(20) install additionally on the outside of gas pipe(30) that supplies gas to the reaction tube(10) which is heated up by the lamp(11). The gas pipe(30) that runs through the gas cooling device is structured in spring shape to increase heat exchange efficiency by increasing the contact possibility with coolant. The coolant entrance(21) that is inserted inside of the gas cooling device(20) is installed at the one side of bottom area and the coolant exit(23) is made at the other side of upper area. The coolant flow is controlled by installing coolant entrance valve(22) and coolant exit valve(24) at the coolant entrance(21) and the coolant exit(23).

Description

냉각장치가 보강된 급속열처리 장치Rapid heat treatment device with reinforced cooling device

제1도는 본 발명의 일실시예 구성도.1 is a configuration diagram of an embodiment of the present invention.

제2도는 본 발명의 다른 실시예 구성도.2 is a block diagram of another embodiment of the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

10 : 반응관 11 : 램프10: reaction tube 11: lamp

20 : 가스냉각장치 21 : 냉매입구20: gas cooling device 21: refrigerant inlet

22 : 냉매입구밸브 23 : 냉매출구22: refrigerant inlet valve 23: refrigerant outlet

24 : 냉매출구 밸브 30 : 가스관24: refrigerant outlet valve 30: gas pipe

31 : 제1가스관 32 : 제2가스관31: first gas pipe 32: second gas pipe

33 : 3웨이밸브 34 : 2웨이밸브33: 3-way valve 34: 2-way valve

본 발명은 반도체 소자 제조장치에 관한 것으로 특히 반도체 소자제조장치 중에서 급속열처리장치(RTP:Rapid Thennal Processing)에 냉각장치를 보강하여 더욱 빠른 냉각속도를 얻을 수 있도록 한 냉각장치가 보강된 급속열처리 장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a semiconductor device manufacturing apparatus, and more particularly, to a rapid thermal processing apparatus in which a cooling apparatus is reinforced so as to obtain a faster cooling speed by reinforcing a rapid thermal processing apparatus (RTP) in a semiconductor device manufacturing apparatus. It is about.

반도체 제조공성에 있어서 화학중착법으로 선택적인 규소에피(sillicon epltaxy)층을 성장할 경우 성장된 규소에피층의 측벽결함(sidewall defects)은 에피층 성장후 기판의 냉각시 선택적 성장의 마스크 재료인 규소산화막(sillicon oxide)혹은 구소질화막(xillicon nitride)과 규소층의 열팽창계수의 차이로 인해서 냉각시 생성된다고 한다.When growing a selective silicon epitaxial layer by chemical deposition in the process of semiconductor fabrication, sidewall defects of the grown silicon epitaxial layer are a silicon oxide film that is a mask material for selective growth upon cooling of the substrate after epitaxial growth. (sillicon oxide) or due to the difference in the coefficient of thermal expansion of the xillicon nitride and the silicon layer is said to be generated during cooling.

RASHID BASHIR의 연구논문에 의하면, 냉각시 규소 결성에서 결함이 생성되는 것은 결국 전단 열 응력(shear themlal stress)이 전단 최대 항복강도(shear upper vield strength) 보다 클때 결함이 생성된다고 한다.According to the research paper of RASHID BASHIR, the formation of defects in the formation of silicon upon cooling results in defects when the shear themlal stress is greater than the shear upper vield strength.

그런데 전단 최대 항복 강도는 응력비(strai1l rate)가 클수록 큰값을 갖게 된다.However, the shear maximum yield strength has a larger value as the stress ratio (strai1l rate) is larger.

그리고 응력비는 냉각속도를 크게 할 수록 커지게 된다.And the stress ratio increases as the cooling rate increases.

따라서 냉각속도를 빠르게 하면 응력비가 커지고, 따라서 전단 최대 항복 강도가 증가한다.Therefore, increasing the cooling rate increases the stress ratio, thus increasing the shear maximum yield strength.

따라서 선택적 규소에피층의 성장지 에피층의 측벽 결정결함의 생성을 피할 수 있게 된다.Therefore, it is possible to avoid the generation of sidewall crystal defects of the growth layer epitaxial layer of the selective silicon epitaxial layer.

종래에 사용되고 있는 급속 열처리장치는 램프를 사용하여 반도체 기판을 가열하여 열처리를 하거나 반응가스불 이용하여 특정물질을 도포하는 공정에 사용하여 왔다.Conventional rapid heat treatment apparatus has been used in the process of heating a semiconductor substrate using a lamp to heat treatment or coating a specific material using a reaction gas fire.

이와 같은 램프를 사용하면 반도체 기판의 표면을 급속하게 가열할 수 있고, 또한 냉각할 수 있기 때문에 공정시간을 단축할 수 있으며, 따라서 전체적인 열에너지를 절약할 수 있는 잇점이 있다.The use of such a lamp can rapidly heat and cool the surface of the semiconductor substrate, thereby reducing the process time and thus saving the overall thermal energy.

특히 반도체 소자의 제조단계에서 고온에서 머무는 시간은 줄일 수 있어 제조 공정상 원하지 않는 확산이나 반응을 피할 수 있고 얕은 접합(shallow junction) 형성이나 저온 에피(epitaxial)성장 등의 공정에 이용할 수 있다.In particular, the time spent at high temperature in the manufacturing stage of the semiconductor device can be shortened, so that unwanted diffusion or reaction can be avoided in the manufacturing process, and it can be used for processes such as shallow junction formation or low temperature epitaxial growth.

열처리나 물질 도포, 확산등을 위해서 기존에 사용하던 노(furnace)에 비하면 급속열처리 장치는 굉장히 빠른 가열과 냉각을 할 수 있다.Compared to the furnace used in the past for heat treatment, material application, diffusion, etc., the rapid heat treatment apparatus can perform very fast heating and cooling.

일반적으로 기존의 급속열처리 장치의 가열속도는 약 150∼250℃/초 정도이고, 냉각속도는 두단계로 나눠서 첫째 단계에서는 30∼50℃/초로 비교적 빨리 냉각되다가, 약 600℃ 이후부터는 60∼80℃/분의 냉각속도로 상기 첫단계에 비하여 서서히 냉각이 이루어지는 특징이 있다.In general, the heating speed of the conventional rapid heat treatment apparatus is about 150 ~ 250 ℃ / second, the cooling rate is divided into two stages in the first stage is cooled relatively quickly to 30 ~ 50 ℃ / second, after about 600 ℃ 60 ~ 80 Cooling is slower than the first step at a cooling rate of ℃ / min.

따라서 열처리 과정후 냉각단계에서 반도체 기판상에 결정결함이 생성되는 문제점이 있었다.Therefore, there is a problem that crystal defects are generated on the semiconductor substrate in the cooling step after the heat treatment process.

이와 같은 문제점을 해소하기 위하여 안출된 본 발명에서는 열처리 과정후 더욱 빠른 냉각속도를 갖도록 하므로서 생성된 반도체의 결정결함(systalline defects)을 줄일 수 있도록 한 냉각장치가 보강된 급속열처리장치를 제공하는데 그 목적이 있다.The present invention devised to solve such a problem is to provide a rapid heat treatment apparatus reinforced with a cooling device to reduce the crystalline defects of the semiconductor produced by having a faster cooling rate after the heat treatment process. There is this.

상기의 목적을 달성하기 위하여 본 발명에서는 빠른 냉각속도를 얻기 위하여 반응관에 입력되는 가스라인에 별도의 냉각장치를 부착하여 반응(혹은 열처리)이 끝난 후 램프(lamp)가 꺼지고 냉각단계가 시작되면 냉각장치를 통과하여 충분히 냉각된 가스가 반도체 기판의 표면에 닿아 반도체 기판 표면을 매우 빠르게 냉각할 수 있도록 함을 특징으로 한다.In order to achieve the above object, in the present invention, a separate cooling device is attached to the gas line input to the reaction tube in order to obtain a fast cooling rate, and then the lamp is turned off after the reaction (or heat treatment) is finished. The gas sufficiently cooled by passing through the cooling device reaches the surface of the semiconductor substrate so that the surface of the semiconductor substrate can be cooled very quickly.

이하 첨부된 도면에 의거하여 본 발명의 실시예를 상세히 설명한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[실시예]EXAMPLE

제1도는 본 발명 냉각장치가 보강된 급속열처리의 일실시예를 나타내는 구성도이다.1 is a configuration diagram showing an embodiment of a rapid heat treatment in which the present invention cooling apparatus is reinforced.

램프(11)에 의해 가열되는 반응관(10)에 가스를 공급하는 가스관(30)의 외부에 가스냉각장치(20)가 부가설치된 것이다.The gas cooling device 20 is additionally installed outside the gas pipe 30 for supplying gas to the reaction tube 10 heated by the lamp 11.

상기 가스냉각장치(20)내를 통과하는 가스관(30)은 냉각매체와의 접촉기회를 확대하므로써 열교환 효율을 높이기 위하여 용수철 형상으로 구성하여 가스냉각장치(20)내의 가스관 표면적을 확대하며, 상기 가스냉각장치(20)내에 주입되는 냉매입구(21)는 가스냉각장치(20)의 일측 하단에 설치하고, 냉매출구(23)를 타측상단에 형성하여구성한다.The gas pipe 30 passing through the gas cooling device 20 is formed in a spring shape in order to increase the heat exchange efficiency by expanding the contact opportunity with the cooling medium to enlarge the surface area of the gas pipe in the gas cooling device 20, and the gas The refrigerant inlet 21 injected into the cooling device 20 is installed at one lower end of the gas cooling device 20, and a refrigerant outlet 23 is formed at the other upper end.

상기 냉매입구(21)와 냉매출구(23)에는 각각 냉매입구밸브(22)와 냉매출구밸브(24)를 설치하여 냉매의 주입을 조절할 수 있다.The refrigerant inlet 21 and the refrigerant outlet 23 may be provided with a refrigerant inlet valve 22 and a refrigerant outlet valve 24, respectively, to control the injection of refrigerant.

이와 같이 구성된 급속열처리장치의 작용 및 효과를 살펴보면 일반적인 반응단계로서 먼지 반응판(10)내의 반도체 기판을 장입한 후, 가스관(30)을 통하여 비활성가스를 주입하여 반응관(10)의 내부를 치환한다음, 다시 상기 가스관(30)을 통하여 캐리어(carrier) 가스와 반응가스를 주입하고 온도를 올려 반응시켜준다.Referring to the operation and effects of the rapid heat treatment apparatus configured as described above, after charging the semiconductor substrate in the dust reaction plate 10 as a general reaction step, inert gas is injected through the gas pipe 30 to replace the inside of the reaction pipe 10. Then, the carrier gas and the reaction gas are injected again through the gas pipe 30 and reacted by raising the temperature.

반응이 끝나면 온도를 내림과 동시에 반응가스의 공급을 중단하고 냉각가스인 캐리어 가스나 비활성기체를 유입시킨다.At the end of the reaction, the temperature is lowered and the supply of the reaction gas is stopped and the carrier gas or inert gas, which is a cooling gas, is introduced.

즉 반응관(10)의 온도를 내리기 시작할때 가스냉각장치(20)의 냉매입구(21)와 냉매출구(23)의 밸브(22),(24)를 동시에 열어 냉각매체를 주입공급하여 줌으로써 상기 가스냉각장치(20)를 통과하여 반응관(10)내에 유입되는 가스가 냉각되게 된다.That is, when the temperature of the reaction tube 10 starts to be lowered, the refrigerant inlet 21 of the gas cooling device 20 and the valves 22 and 24 of the refrigerant outlet 23 are simultaneously opened to supply and supply the cooling medium. The gas flowing into the reaction tube 10 through the gas cooling device 20 is cooled.

따라서 반응관(10) 내에서 반도체 기판은 더욱 빨리 냉각되게 되는 것이다.Therefore, the semiconductor substrate in the reaction tube 10 is cooled faster.

제2도는 본 발명의 다른 실시예를 나타내는 것으로서 반응관(10)에 주입하는, 가스를 분리하여 공급하도록 한 것이다.2 shows another embodiment of the present invention, in which gas to be injected into the reaction tube 10 is separated and supplied.

즉 반응관(10)에 인입되는 가스관을 3 웨이밸브(33)에 의해 연결하여 일측은 반응가스를 주입하는 제2가스관(32)과 캐리어 가스나 비활성 가스를 주입하는 제1가스관(31)으로 구분하여 설치한다.That is, the gas pipe drawn into the reaction tube 10 is connected by the three-way valve 33, and one side thereof is connected to the second gas pipe 32 for injecting the reaction gas and the first gas pipe 31 for injecting the carrier gas or inert gas. Install separately.

상기 제2가스관(32)은 가스냉각장치(20)를 통과하지 않고 3 웨이밸브(33)를 통하이 직접 반응관(10)에 연결되도록 하며. 제1가스관(31)은 가스냉각장치(10)를 통과하여 상기 3 웨이밸브(33)를 통하여 반응관(10)에 연결되어 있다.The second gas pipe 32 is connected to the reaction tube 10 directly through the three-way valve 33 without passing through the gas cooling device 20. The first gas pipe 31 passes through the gas cooling device 10 and is connected to the reaction pipe 10 through the three-way valve 33.

미설명 부호(34)는 2 웨이가스밸브이다.Reference numeral 34 is a two-way gas valve.

이와 같이 구성된 본 발명의 다른 실시예의 작용 및 효과를 살펴보면 고온의 반응단계까기는 제2가스관(32)을 통하여 반응가스를 반응관(10)에 직접 주입시켜 반응시긴다.Looking at the action and effect of another embodiment of the present invention configured as described above, the reaction step of the high temperature reaction step is injected directly into the reaction tube 10 through the second gas pipe (32).

반응이 완전히 이루어진 후 온도를 내리는 단계에서는 제1가스관(31)을 통하여 캐리어 가스나 비활성가스를 가스냉각장치(20)를 통과하면서 냉각되어 주입되도록 한다.In the step of lowering the temperature after the reaction is completed, the carrier gas or the inert gas is cooled and injected while passing through the gas cooling device 20 through the first gas pipe 31.

이때 주입가스의 흐름을 바꾸기 위해서는 3 웨이가스밸브(33)를 사용한다.At this time, the three-way gas valve 33 is used to change the flow of the injection gas.

이와 같이 반응단계와 냉각단계의 가스의 흐름을 바꾸어 주는 것은 쓸모없는 가스 흐름 양을 줄이기 위한 것이다.As such, changing the gas flow in the reaction and cooling steps is to reduce the amount of useless gas flow.

다시 말하면, 급속열처리 장치를 이용한 화학증착(chemical vapor deposidorl) 장치에서 반응가스를 빨리 바꾸어서 연속적으로 다른 물질을 도포하는 방법을 이용할 수 있는데, 이처럼 물질을 바꿔 도포할때 그 도포물질 간에 명확한 경계면을 얻기 위해서는 반응가스를 빨리 바꿔주어야 한다.In other words, in a chemical vapor deposidorl apparatus using a rapid heat treatment apparatus, it is possible to change the reaction gas quickly and apply another substance continuously. Thus, when changing the substance, obtaining a clear interface between the coating substances. In order to change the reaction gas quickly.

이를 위해서는 반응가스의 주입을 조절하는 밸브로부터 반응관(10)에 이루는 부피가 가능한 작아야 반동가스가 빨리 바뀔 수 있다.To this end, the reaction gas may change quickly when the volume of the reaction tube 10 from the valve for controlling the injection of the reaction gas is as small as possible.

따라서 이런 경우 상기 제1실시예에 의한 방법에 의해서는 반응가스 주입 밸브로부터 반응관까지의 부피가 커져 반응가스를 빨리 바꿀 수 없는 문제점이 있었다.Therefore, in this case, the method according to the first embodiment has a problem in that the volume from the reaction gas injection valve to the reaction tube becomes large so that the reaction gas cannot be changed quickly.

따라서 쓸모없는 가스 흐름 양이 커져 도포물질의 명확한 계면을 얻을 수 없게 되나 제2실시예와 같이 반응가스와 냉각가스를 분리 공급할 수 있도록 함으로씨 상기의 문제점을 해소할 수 있게 된다.Therefore, the amount of useless gas flow is increased to obtain a clear interface of the coating material, but as described in the second embodiment, the reactive gas and the cooling gas can be supplied separately to solve the above problem.

이상 살펴본 바와 같이 본 발명에서는 반도체 제조공정에서 열처리 과정을 거친 후 냉각단계에서 반도체 기판에 생성되는 결정 결함을 줄일 수 있도록 한 것으로서 반도체 제조공정에 있어 매우 유용한 기술이다.As described above, the present invention is to reduce the crystal defects generated in the semiconductor substrate in the cooling step after the heat treatment process in the semiconductor manufacturing process is a very useful technology in the semiconductor manufacturing process.

Claims (3)

장입되는 반도체 기판을 램프(11)에 의해 가열하거나 가스관을 통해 주입되는 캐리어 가스나 반응가스에 의해 가열 또는 냉각하기 위한 반응관(10)을 포함하여 반도체 제조공정시 급속열처리를 하는 장치에 있어서, 상기 반응관(l0)에 인입되어 이 반응관(l0)에 공급되는 가스가 냉각시 냉각매체와의 접촉면적이 최대로 확대되도록 가스를 통과시키는 용수철 형상의 가스관(30)과; 상기 가스관(30)이 통과되고 상기 공급되는 가스의 냉각을 위해 일측 하단 및 타측 하단에 각기 설치되어 냉각매체를 주입 및 배출시키기 위한 냉매입구 밸브(22) 및 냉매 출구 밸브(24)를 포함한 가스냉각장치(20)가 상기 반응관(10)에 부설된 것을 특징으로 하는 냉각장치가 보강된 급속열처리장치.In the apparatus for rapid heat treatment during the semiconductor manufacturing process, including a reaction tube 10 for heating or cooling the charged semiconductor substrate by the lamp 11 or by the carrier gas or the reaction gas injected through the gas pipe, A spring-shaped gas pipe (30) passing through the gas such that the gas introduced into the reaction pipe (10) and supplied to the reaction tube (10) passes through the gas to maximize the contact area with the cooling medium; The gas pipe 30 is passed through the gas cooling including a refrigerant inlet valve 22 and a refrigerant outlet valve 24 for injecting and discharging the cooling medium are respectively installed at one lower end and the other lower end for cooling the supplied gas Rapid heat treatment apparatus reinforced with a cooling device, characterized in that the device 20 is attached to the reaction tube (10). 제1항에 있어서, 반응관(10)에 연결되는 가스관(30)은 가스의 흐틈을 신속히 바꾸어줄 수 있도록 반응가스가 주입되는 제2가스관(32)과; 캐리어 가스나 비활성가스를 주입하는 제1가스관(31)으로 분리 설치됨을 특징으로 하는 냉각장치가 보강된 급속열처리 장치.The method of claim 1, wherein the gas pipe 30 connected to the reaction tube 10 includes a second gas pipe 32 into which the reaction gas is injected so as to quickly change the flow of gas; Rapid heat treatment apparatus reinforced with a cooling device, characterized in that separated by the first gas pipe 31 for injecting carrier gas or inert gas. 제2항에 있어서, 반응단계의 가스를 공급하는 제2가스관(32)은 가스냉각장치(20)를 통과하지 않도록하며, 냉각단계의 가스를 공급하는 제l가스관(31)은 가스냉각장치(20)를 통과하도록 구성됨을 특징으로 하는 냉각장치가 보강된 급속열처리 장치.According to claim 2, wherein the second gas pipe (32) for supplying the gas of the reaction step does not pass through the gas cooling device 20, the first gas pipe (31) for supplying the gas of the cooling step is a gas cooling device ( Rapid heat treatment apparatus reinforced with a cooling device, characterized in that configured to pass through 20).
KR1019940010552A 1994-05-14 1994-05-14 Rapid thermal processing apparatus with cooling device KR0128025B1 (en)

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JP6305096A JP2886101B2 (en) 1994-05-14 1994-12-08 Rapid heat treatment system with enhanced cooling system

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