KR0124148B1 - Forming method of dielectric film - Google Patents

Forming method of dielectric film

Info

Publication number
KR0124148B1
KR0124148B1 KR89008563A KR890008563A KR0124148B1 KR 0124148 B1 KR0124148 B1 KR 0124148B1 KR 89008563 A KR89008563 A KR 89008563A KR 890008563 A KR890008563 A KR 890008563A KR 0124148 B1 KR0124148 B1 KR 0124148B1
Authority
KR
South Korea
Prior art keywords
forming method
dielectric film
dielectric
film
forming
Prior art date
Application number
KR89008563A
Other languages
Korean (ko)
Other versions
KR900001011A (en
Inventor
Sinichi Ito
Yosio Honma
Eiji Sasaki
Naki Yokoyama
Original Assignee
Hitachi Mfg Kk
Hitachi Choelesai Engineering
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Mfg Kk, Hitachi Choelesai Engineering filed Critical Hitachi Mfg Kk
Publication of KR900001011A publication Critical patent/KR900001011A/en
Application granted granted Critical
Publication of KR0124148B1 publication Critical patent/KR0124148B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Formation Of Insulating Films (AREA)
KR89008563A 1988-06-21 1989-06-21 Forming method of dielectric film KR0124148B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63-151102 1988-06-21
JP63151102A JP2829301B2 (en) 1988-06-21 1988-06-21 Method of forming insulating film

Publications (2)

Publication Number Publication Date
KR900001011A KR900001011A (en) 1990-01-31
KR0124148B1 true KR0124148B1 (en) 1997-11-25

Family

ID=15511387

Family Applications (1)

Application Number Title Priority Date Filing Date
KR89008563A KR0124148B1 (en) 1988-06-21 1989-06-21 Forming method of dielectric film

Country Status (2)

Country Link
JP (1) JP2829301B2 (en)
KR (1) KR0124148B1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010015499A1 (en) 2000-02-23 2001-08-23 Hiroshi Yuasa Semiconductor device and method for fabricating the same
JP2004056123A (en) * 2000-02-23 2004-02-19 Matsushita Electric Ind Co Ltd Manufacturing method of semiconductor device
JP2001313333A (en) * 2000-02-23 2001-11-09 Matsushita Electric Ind Co Ltd Semiconductor device and its manufacturing method
JP2001338978A (en) 2000-05-25 2001-12-07 Hitachi Ltd Semiconductor device and its manufacturing method
US6917110B2 (en) 2001-12-07 2005-07-12 Sanyo Electric Co., Ltd. Semiconductor device comprising an interconnect structure with a modified low dielectric insulation layer
JP4742503B2 (en) * 2004-02-27 2011-08-10 セイコーエプソン株式会社 Deposition method

Also Published As

Publication number Publication date
JPH01319942A (en) 1989-12-26
JP2829301B2 (en) 1998-11-25
KR900001011A (en) 1990-01-31

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