KR0123311Y1 - Exhaust apparatus of semiconductor manufacture device - Google Patents
Exhaust apparatus of semiconductor manufacture deviceInfo
- Publication number
- KR0123311Y1 KR0123311Y1 KR2019950016998U KR19950016998U KR0123311Y1 KR 0123311 Y1 KR0123311 Y1 KR 0123311Y1 KR 2019950016998 U KR2019950016998 U KR 2019950016998U KR 19950016998 U KR19950016998 U KR 19950016998U KR 0123311 Y1 KR0123311 Y1 KR 0123311Y1
- Authority
- KR
- South Korea
- Prior art keywords
- exhaust
- reaction
- pipe
- exhaust pipe
- purge gas
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
본 고안의 반도체 제조장비의 배기장치응 반응실내의 반응부산물을 배기시키는 제1배기관과, 스크루버내로 반응 부산물을 배기시키는 제2배기관과, 제1배기관과 제2배기관 사이에 형성되어 제1배기관의 반응부산물이 제2배기관으로 원활하게 배기되도록 하는 펌프와, 제2배기관내의 반응부산물을 걸러주는 스쿠루버와, 제2배기관과 스쿠루버 인입부의 파우더를 불어내기 위한 정화가스관으로 이루어지는 배기장치에 있어서, 정화가스관의 배기구를 제트노즐로 형성시키고, 정화가스관에 형성되어 제트 노즐로 분사되는 정화가스의 압력과 양을 조절하는 제어수단으로 이루어진다.A first exhaust pipe for exhausting the reaction by-products in the reaction chamber of the semiconductor manufacturing equipment of the present invention, a second exhaust pipe for exhausting the reaction by-products into the scrubber, and formed between the first exhaust pipe and the second exhaust pipe. In the exhaust device comprising a pump for smoothly evacuating the reaction by-products of the second exhaust pipe, a scuba louver for filtering the reaction by-products in the second exhaust pipe, and a purge gas pipe for blowing powder of the second exhaust pipe and the scuba inlet. The exhaust port of the purification gas pipe is formed by a jet nozzle, and the control means is formed in the purification gas pipe to control the pressure and amount of the purification gas injected into the jet nozzle.
Description
제1도는 종래의 반도체 제조장비의 배기장치를 도시한 도면.1 is a view showing an exhaust device of a conventional semiconductor manufacturing equipment.
제2도는 본 고안의 반도체 제조장비의 배기장치를 도시한 도면.2 is a view showing an exhaust device of the semiconductor manufacturing equipment of the present invention.
* 도면의 주요부분에 대한 부호 설명* Explanation of symbols on the main parts of the drawings
10,20 : 제1배기관 11,21 : 제2배기관10,20: first exhaust pipe 11,21: second exhaust pipe
12,22 : 스쿠루버 13,23 : 정화가스관12,22: Scuba lever 13,23: Purification gas pipe
24 : 솔레노이드밸브24: solenoid valve
본 고안은 반응실내에서 파우더(powder)나 공전잔류가스(gas)등의 반응부산물이 배기되는 반도체 제조장비의 배기장치에 관한 것으로 특히, 스쿠루버(scurubber)의 인입부에 반응부산물인 파우더나 공정 잔류가스 등이 적재되는 것을 방지하는 반도체 제조장비의 배기장치에 관한 것이다.The present invention relates to an exhaust device of a semiconductor manufacturing equipment in which reaction by-products such as powder or idle gas are exhausted in a reaction chamber. Particularly, a powder or a process that is a reaction by-product in the inlet of a scurubber. It relates to an exhaust device of a semiconductor manufacturing equipment for preventing the residual gas and the like is loaded.
제1도는 종래의 반도체 제조장비의 배기장치를 도시한 도면이다. 이하 도면을 참고로 하여 설명하면 다음과 같다.1 is a view showing an exhaust device of a conventional semiconductor manufacturing equipment. Hereinafter, description will be given with reference to the drawings.
종래의 반도체 제조장비의 배기장치는 반응실내의 반응부산물을 배기시키는 제1개기관(10)과, 스쿠루버(12)내로 반응부산물을 배기시키는 제2배기관(11)과, 제1배기관(10)과 제2배기관(11) 사이에 형성되어, 제1배기관(10)의 반응부산물이 제2배기관(11)으로 원활하게 배기되도록 하는 펌프와, 제2배기관(11)내의 반응부산물을 걸러주는 스쿠루버(13)와, 스쿠루버(12) 인입부의 파우더를 불어내기 위한 정화가스관(13)으로 이루어진다.The exhaust device of the conventional semiconductor manufacturing equipment includes a first open pipe 10 for exhausting the reaction by-products in the reaction chamber, a second exhaust pipe 11 for exhausting the reaction by-products into the scubar 12, and a first exhaust pipe 10. Is formed between the second exhaust pipe 11 and the second exhaust pipe 11 so as to smoothly exhaust the reaction by-products of the first exhaust pipe 10 to the second exhaust pipe 11 and to filter the reaction by-products in the second exhaust pipe 11. It consists of the scuba louver 13 and the purification gas pipe 13 for blowing the powder of the scuba louver 12 inlet part.
종래의 반도체 제조장비의 배기장치는 반응실에서 발생되어 나오는파우더나 공정잔류가스 등의 반응부산물을 제1배기관(10)을 통하여 펌프로 배기시킨 후, 제2배기관(11)을 거쳐서 스쿠루버(12)에서 반응부산물을 걸러준다.The exhaust device of the conventional semiconductor manufacturing equipment exhausts reaction by-products, such as powder or process residual gas, generated from the reaction chamber through a first exhaust pipe 10 through a pump, and then passes through a scuba lever through a second exhaust pipe 11. Filter the reaction by-products in 12).
그리고 반응실내의 반응부산물을 배기시키기 위한 펌프로는 루츠펌프(roots pump)와 리엑트펌프(reactor pump)로 이루어지는데 루츠펌프는 배기진공속도를 증가시키며, 리엑트펌프는 초기진동상태를 만드는 기능을 갖는다.In addition, the pumps for exhausting the reaction by-products in the reaction chamber are composed of a roots pump and a reactor pump. The roots pump increases the exhaust vacuum speed, and the reactor pump makes an initial vibration state. Has
반응무산물인 파우더 및 공정 잔류가스는 스쿠루버(12)의 인입부에 적재되며 적재된 파우더는 스쿠루버(12)의 인입부에 위치한 정화가스관(13)에서 부사되는 정화가스에 의해 스쿠루버(12)내로 날려 보내어 진다.The reaction analyte powder and the process residual gas are loaded into the inlet of the scubar 12 and the loaded powder is scubar 12 by the purge gas adsorbed from the purge gas pipe 13 located in the inlet of the scubar 12. Blown into me.
이때, 반응부산물인 파우더를 걸러주는 스쿠루버 인입부에 적재된 파우더가 보통 2내지 3일이 되면 굳기 때문에 배기관이 막혀 배기가 원활하게 되지 않고 이로 인하여 펌프가 충분한 배기가 되지 않음으로서 반응실내 파티클(particle)이 증가하게 된다.At this time, since the powder loaded on the scuba lever inlet that filters the reaction by-product powder hardens in 2 to 3 days, the exhaust pipe is blocked and the exhaust is not smoothly, and the pump is not sufficiently exhausted. particles increase.
또한, 스쿠루버의 인입부에 적재된 파우더나 공정 잔류가스가 많으면 많은수록 고압, 다량의 정화가스를 분사하여야 하지만, 종래의 반도체 제조장비의 배기장치에서의 정화가스관에 분사되는 정화가스는 압력과 양의 조절이 불가능하다. 즉, 스쿠루버의 인입부에 적재된 반응부산물인 파우더나 공정 잔류가스의 정도에 따른 정화가스 압력과 양조절이 어렵고 또한 일정한 주기로 정비를 해 주어야 하는 단점이 있다.In addition, the more powder or process residual gas loaded into the intake part of the scubar, the higher pressure and a large amount of purge gas should be injected. However, the purge gas injected into the purge gas pipe in the exhaust device of the conventional semiconductor manufacturing equipment has a pressure and The amount cannot be adjusted. That is, it is difficult to control the purge gas pressure and amount according to the degree of powder or process residual gas, which is a reaction by-product loaded on the intake part of the scubar, and there is a disadvantage in that maintenance is required at regular intervals.
그래서 종래의 반도체 제조장비의 배기장치는 스쿠루버 인입부에 정화가스관이 설치되어 일정한 방향으로만 정화가스를 불어 주므로서 다소한 인입부에서 반응부산물인 파우더의 적재현상을 어느 정도는 줄일 수 있지만 완전히 줄일 수는 없어 일정한 공정조건을 만족시키지 못하므로써 반응실내 파티클이 발생되는 단점이 있다.Therefore, in the exhaust device of the conventional semiconductor manufacturing equipment, the purification gas pipe is installed in the scuba lever inlet and blows the purification gas only in a certain direction, thereby reducing the loading phenomenon of the powder, which is a reaction byproduct, in some inlet. There is a disadvantage in that it is not possible to reduce the particles in the reaction chamber by not satisfying certain process conditions.
본 고안은 스쿠루버의 인입부에 적재된 반응부산물인 파우더나 공정 잔류가스를 보다 원활하게 배기할 수 있도록 한 반도체 제조장비의 배기관을 얻고자 안출된 것이다.The present invention was devised to obtain an exhaust pipe of a semiconductor manufacturing equipment that enables the exhaust of powder or process residual gas, which is a reaction byproduct, loaded on the intake portion of a scubar.
본 고안은 반응실내의 반응부산물을 배기시큰 제1배기관과, 스쿠루버내로 반응부산물을 배기시키는 제2배기관과, 제1배기관과 제2배기관 사이에 형성되어 제1배기관의 반응부산물이 제2배기관으로 원활하게 배기되도록 하는 펌프와, 제2배기관내의 반응부산물을 걸러주는 스쿠루버와, 제2배기관과 스쿠루버 인입부의 파우더를 불어내기 위한 정화가스관으로 이루어지는 배기장치에 있어서, 정화가스관에 형성되어 제트노즐로 분사되는 정화가스의 압력과 양을 조절하는 제어수단으로 이루어진다.The present invention is formed between a first exhaust pipe that exhausts the reaction byproducts in the reaction chamber, a second exhaust pipe that exhausts the reaction byproducts into the scuba lever, and a reaction byproduct of the first exhaust pipe is formed between the first exhaust pipe and the second exhaust pipe. An exhaust device comprising a pump for smoothly evacuating the gas, a scuba louver for filtering reaction by-products in the second exhaust pipe, and a purge gas pipe for blowing powder of the second exhaust pipe and the scuba louver inlet. Control means for adjusting the pressure and amount of the purge gas injected into the jet nozzle.
제2도는 본 고안의 배기장치를 도시하기 도면으로 이하 도면을 참고로 하여 설명하면 다음과 같다.2 is a view showing the exhaust device of the present invention will be described with reference to the drawings below.
본 고안은 반응실내의 반응부산물을 배기시키는 제1배기관(20)과, 스쿠루버내로 반응부산물을 배기시키는 제2배기관(21)과, 제1배기관(20)과 제2배기관(21) 사이에 형성되어 제1배기관(20)의 반응부산물이 제2배기관(21)으로 원활하게 배기되도록 하는 펌프와, 제2배기관(21)내의 반응부산물을 걸러주는 스쿠루버(22)와, 제2배기관(21)과 스쿠루버(22) 인입부의 파우더를 불어내기 위한 정화가스관(23)으로 이루어지는 배기장치에 있어서, 정화가스관(23)의 배기구를 제트노즐(zet nozzle)로 형성시키고, 정화가스관(23)에 형성되어 제트노즐로 분사되는 정화가스의 압력과 양을 조절하는 제어수단으로 이루어진다.The present invention provides a first exhaust pipe 20 for exhausting the reaction byproducts in the reaction chamber, a second exhaust pipe 21 for exhausting the reaction byproducts into the scubar, and between the first exhaust pipe 20 and the second exhaust pipe 21. The pump is formed to smoothly exhaust the reaction by-products of the first exhaust pipe 20 to the second exhaust pipe 21, the scuba lever 22 for filtering the reaction by-products in the second exhaust pipe 21, and the second exhaust pipe ( 21) and a purge gas pipe 23 for blowing powder of the intake portion 22, the exhaust port of the purge gas pipe 23 is formed by a jet nozzle, and the purge gas pipe 23 It is formed in the control means for controlling the pressure and amount of the purge gas injected into the jet nozzle.
이때, 정화가스의 압력과 양을 조절하는 제어수단으로는 솔레노이드밸브(24)와 솔레노이드밸브를 동작시키기 위한 구형파인가부로 이루어지며, 솔레노이드밸브(24)는 구형파인가부에서 인가되는전압의 최대치가 24볼트(V)의 구형파로 동작되어 정화가스관(23)을 2초간격으로 온오프(on~off)시킨다.At this time, the control means for regulating the pressure and amount of the purge gas is composed of a solenoid valve 24 and a square wave applying unit for operating the solenoid valve, the solenoid valve 24 is the maximum value of the voltage applied from the square wave applying unit 24 It is operated by the square wave of the bolt (V) to turn on and off the purifying gas pipe (23) at intervals of 2 seconds.
즉, 본 고안의 반도체 제조장비의 배기장치는 종래의 스쿠루버(22) 인입부가 반응부산물인 파우더나 공정잔류가스에 의해 막히는 것을 정화가스관(23) 배기구를 제트 노즐로 형성하여 정화가스를 분사시키므로서 인입부에 쌓인 반응부산물을 스쿠루버(22)로 불어내도록 구성되며, 또한 솔레노이드밸브(24)는 구형파인가부에서 인가되는 구형파에 의해 동작되므로 정화가스의 압력과 양을 일정하게 조절가능하도록 하여, 스쿠루버(22) 인입부에 적재된 파우더의 양이 많으면 많을수록 고압으로, 다량의 정화가스를 분사시켜서 반응부산물인 파우더나 공정잔류가스를 스쿠루버(22) 내로 날려 보내준다.That is, in the exhaust device of the semiconductor manufacturing equipment of the present invention, since the inlet portion of the conventional scuba louver 22 forms a jet nozzle by forming the exhaust port of the purification gas pipe 23 as a jet nozzle, it is blocked by the powder or process residual gas which is a reaction byproduct. It is configured to blow the reaction by-products accumulated in the inlet to the scuba lever 22, and the solenoid valve 24 is operated by the square wave applied from the square wave applying unit so that the pressure and amount of the purification gas can be constantly adjusted. , The greater the amount of powder loaded in the intake portion of the scuba louver 22, the higher pressure, and a large amount of purge gas is injected to blow the powder or process residual gas, which is a by-product of the reaction, into the scuba lever 22.
본 고안의 반도체 제조장비의 배기장치는 스쿠루버 인입부에 제어수단인 솔레노이드밸브를 부착하므로써, 적재된 반응부산물인 파우더나 공정 잔류가스의 양을 줄일 수 있으며 또한, 정화가스의 압력과 양을 조절하므로써 스쿠루버의 인입부에 적재된 반응부산물을 정제하기 위한 시간을 줄일 수가 있어 공정불량의 감소로 안정된 공정조건을 유지할 수 있는 효과를 갖는다.The exhaust device of the semiconductor manufacturing equipment of the present invention attaches a solenoid valve, which is a control means, to the scuba lever inlet, thereby reducing the amount of powder or process residual gas loaded as a reaction by-product, and controlling the pressure and amount of the purification gas. Therefore, it is possible to reduce the time for purifying the reaction by-product loaded on the inlet portion of the scubar, thereby reducing the process defects, thereby maintaining a stable process condition.
Claims (4)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019950016998U KR0123311Y1 (en) | 1995-07-11 | 1995-07-11 | Exhaust apparatus of semiconductor manufacture device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019950016998U KR0123311Y1 (en) | 1995-07-11 | 1995-07-11 | Exhaust apparatus of semiconductor manufacture device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR970007234U KR970007234U (en) | 1997-02-21 |
| KR0123311Y1 true KR0123311Y1 (en) | 1998-10-01 |
Family
ID=19417956
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR2019950016998U KR0123311Y1 (en) | 1995-07-11 | 1995-07-11 | Exhaust apparatus of semiconductor manufacture device |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR0123311Y1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100523384B1 (en) * | 2002-05-11 | 2005-10-24 | 최경수 | Controller of gas scrubber |
| KR20100062020A (en) * | 2008-12-01 | 2010-06-10 | 이유형 | Industrial air purifiers |
-
1995
- 1995-07-11 KR KR2019950016998U patent/KR0123311Y1/en not_active IP Right Cessation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100523384B1 (en) * | 2002-05-11 | 2005-10-24 | 최경수 | Controller of gas scrubber |
| KR20100062020A (en) * | 2008-12-01 | 2010-06-10 | 이유형 | Industrial air purifiers |
Also Published As
| Publication number | Publication date |
|---|---|
| KR970007234U (en) | 1997-02-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5996834B2 (en) | Vacuum exhaust device | |
| US7278831B2 (en) | Apparatus and method for control, pumping and abatement for vacuum process chambers | |
| JP2009513330A (en) | Gas processing method | |
| JP2010504847A5 (en) | ||
| US6090222A (en) | High pressure gas cleaning purge of a dry process vacuum pump | |
| KR0123311Y1 (en) | Exhaust apparatus of semiconductor manufacture device | |
| US20080041414A1 (en) | Pump Cleaning | |
| US5312466A (en) | Pumping installation for pumping out an enclosure containing gases which are mixed with solid particles or which generate solid condensates or particles | |
| WO2002040738A3 (en) | Installation wherein is performed an operation requiring control of atmosphere inside a chamber | |
| KR20040013096A (en) | Exhaust gas pretreating method and exhaust gas pretreating device and dedusting device used therefor | |
| JPH09909A (en) | Exhauster | |
| US7553356B2 (en) | Exhaust gas scrubber for epitaxial wafer manufacturing device | |
| KR101092962B1 (en) | Plasma exhaust gas circulation system | |
| EP0980701A1 (en) | Gas recovery unit | |
| WO2007066141A1 (en) | Method of inhibiting a deflagration in a vacuum pump | |
| EP1937392A1 (en) | Method of treating a gas stream | |
| KR200283870Y1 (en) | Low pressure chemical vapour deposition device | |
| JPH03183693A (en) | Method and apparatus for cleaning vapor growth device | |
| JP2520592Y2 (en) | Decompression exhaust device | |
| KR100270754B1 (en) | Exhaust pipe line auto purge method | |
| KR200203865Y1 (en) | 3-way valve for gas separation | |
| KR200267601Y1 (en) | Waste-gas cleaning device with Plazma | |
| KR0136328Y1 (en) | Gas exhausting line for semiconductor vacuum chamber | |
| KR200220791Y1 (en) | A silencer of vacuum pump | |
| JPH02102194A (en) | Vapor phase growth apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E701 | Decision to grant or registration of patent right | ||
| REGI | Registration of establishment | ||
| FPAY | Annual fee payment |
Payment date: 20090427 Year of fee payment: 12 |
|
| LAPS | Lapse due to unpaid annual fee |