KR0122873Y1 - Moving position measuring apparatus for stepper - Google Patents

Moving position measuring apparatus for stepper Download PDF

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Publication number
KR0122873Y1
KR0122873Y1 KR2019920008381U KR920008381U KR0122873Y1 KR 0122873 Y1 KR0122873 Y1 KR 0122873Y1 KR 2019920008381 U KR2019920008381 U KR 2019920008381U KR 920008381 U KR920008381 U KR 920008381U KR 0122873 Y1 KR0122873 Y1 KR 0122873Y1
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South Korea
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bar
stage
miller
stepper
axis
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KR2019920008381U
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Korean (ko)
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KR930026519U (en
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신종욱
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문정환
엘지반도체주식회사
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Environmental & Geological Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

본 고안은 노광장치인 스테퍼의 이동시 위치를 측정하는 장치로서 소자의 구조 및 최소 선폭이 감소되어지는 반도체 제조 공정상의 노광장치에 있어서, 정확한 위치를 감지하여 정지 정밀도의 오차를 최소한으로 할 수 있도록 한 스테퍼 이동 위치 측정장치에 관한 광원인 He-Ne 레이저 헤드(1)와, 빛을 반사시키는 빔 벤더(2)와, 상기 빔 벤더(2)에서 반사된 빛을 2방향으로 분산시키는 빔 스플릿터(3)와, X-Y 스테이지의 상단부에 부착되는 각각 2개씩의 X축, Y축 바밀러(5a, 5b, 6a, 6b)와, 상기 바밀러(5a, 5b, 6a, 6b)로부터 반사된 빛을 받아 위상변환된 파형과 위상변환되지 않는 주파수 차이로 위치를 감지하는 리시버(4)로 구성된 것을 특징으로 하는 스테퍼 이동위치 측정장치이다.The present invention is a device for measuring the position when the stepper, which is an exposure device, is moved. In an exposure device in a semiconductor manufacturing process in which the structure of the device and the minimum line width are reduced, it is possible to minimize the error of stopping accuracy by detecting an accurate position. He-Ne laser head 1, which is a light source for a stepper movement position measuring device, a beam bender 2 for reflecting light, and a beam splitter for dispersing the light reflected from the beam bender 2 in two directions ( 3) and two X-axis and Y-axis bar millers 5a, 5b, 6a, and 6b attached to the upper end of the XY stage, and the light reflected from the bar millers 5a, 5b, 6a, and 6b. It is a stepper movement position measuring device, characterized in that consisting of a receiver (4) for detecting the position by the phase difference waveform and the frequency difference that is not phase shift.

Description

스테퍼 이동 위치 측정장치Stepper moving position measuring device

제1도는 종래의 X-Y 스테이지 계통도.1 is a conventional X-Y stage schematic.

제2도는 X-Y 스테이지 검출 계통도.2 is an X-Y stage detection schematic.

제3도는 본 고안의 X-Y 스테이지 위치 검출 상태도.3 is an X-Y stage position detection state diagram of the present invention.

제4도는 X-Y 스테이지 작동 제어의 플로우 챠트.4 is a flowchart of X-Y stage operation control.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

1 : 레이저 헤드 2 : 빔 벤더(Beam Bender)1: laser head 2: beam bender

3 : 빔 스플릿터 4 : 리시버3: beam splitter 4: receiver

5a : X1바밀러 5b : X2바밀러5a: X 1 bar miller 5b: X 2 bar miller

6a : Y1바밀러 6b : Y2바밀러6a: Y 1 bar miller 6b: Y 2 bar miller

본 고안은 노광장치인 스테퍼의 이동시 위치를 측정하는 장치로서, 소자의 구조 및 최소 선폭이 감소되어지는 반도체 제조 공정상의 노광장치에 있어서 정확한 위치를 감지하여 정지 정밀도의 오차를 최소로 줄일수 있도록 한 스테퍼 이동 위치 측정장치에 관한 것이다.The present invention is a device for measuring the position when the stepper, which is an exposure device, is moved, and it is possible to reduce the error of stopping accuracy to the minimum by detecting the exact position of the exposure device in the semiconductor manufacturing process in which the structure of the device and the minimum line width are reduced. It relates to a stepper moving position measuring device.

제1도는 종래의 X-Y 스테이지 계통도를 도시한 것으로 X-Y 스테이지의 이동 시작 및 목표 위치는 CPU로부터 전달되어 목표치를 카운터하게 되고, 이동위치 및 속도 지시계와 서보 증폭기를 통해 모터를 구동하여 X-Y 스테이지를 목표치에 따라 소정의 셋팅된 위치로 이동시킨다.FIG. 1 shows a conventional XY stage schematic. The movement start and target positions of the XY stage are transmitted from the CPU to counter the target value, and the motor is driven through the movement position and speed indicator and the servo amplifier to bring the XY stage to the target value. Accordingly move to a predetermined set position.

이때 He-Ne 측정계가 X-Y 스테이지의 이동 위치를 측정하여 현재 위치를 카운터한다.At this time, the He-Ne measuring system measures the moving position of the X-Y stage and counts the current position.

제2도는 X-Y 스테이지 위치검출 과정을 도시한 것으로 He-Ne 레이저 헤드에서 중성 빔을 방출하면 빔 벤더와 빔 스플릿터를 거쳐 X축과 Y축으로 분할되어 X-Y 스테이지에 부착된 바밀러에 반사된다.FIG. 2 illustrates the X-Y stage position detection process. When the He-Ne laser head emits a neutral beam, the beam is split into an X-axis and a Y-axis through a beam bender and a beam splitter, and reflected by a bar miller attached to the X-Y stage.

이때 간섭계를 통해 바밀러에 반사된 중성 빔은 다시 간섭계를 통해 리시버에 전달되어 X-Y 스테이지의 위치조절 신호로 된다.At this time, the neutral beam reflected by the barmill through the interferometer is transmitted to the receiver through the interferometer to become a positioning signal of the X-Y stage.

그러나, 이러한 종래의 기술은 X-Y 스테이지 상단부에 부착된 바밀러가 X축, Y축에 각각 1개씩 형성되어 이동시 발생되는 순간속도의 변동 및 X-Y 스테이지의 진동에 의한 오차 발생 등으로 인해 노광 위치, 즉 정확한 목표치의 이동 편차가 크게 발생되는 문제점이 있었다.However, such a conventional technique has one bar mill attached to the upper end of the XY stage, one on each of the X and Y axes. There was a problem that the deviation of the exact target value is greatly generated.

따라서, 본 고안은 상기한 문제점을 해소하기 위하여 안출한 것으로, 반도체소자의 구조가 복잡해지고 선폭이 감소되어가는 제조 공정에서 보다 정밀한 위치 정지 절밀도를 구현할 수 있는 스테퍼 이동 위치 측정장치에 관한 것이다.Accordingly, the present invention has been made to solve the above problems, and relates to a stepper moving position measuring apparatus capable of realizing a more precise position stop cutting density in a manufacturing process in which the structure of a semiconductor device is complicated and the line width is reduced.

첨부된 도면을 참조하면서 본 고안을 상세히 설명하면 다음과 같다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

제3도는 본 고안의 X-Y 스테이지 위치 검출상태도를 개략적으로 도시한 것으로 광원인 He-Ne 레이저 헤드와, 빛을 반사시키는 빔 벤더와, 빛을 2방향으로 분산시키기 위한 빔 스플릿터와, X-Y 스테이지의 상단부에 부착되는 각각 2개씩의 X축, Y축 바밀러와, 바밀러로부터 반사된 빛을 받아 스테이지의 위치를 감지하는 리시버로 구성된다.3 is a schematic diagram illustrating the XY stage position detection state of the present invention, wherein a He-Ne laser head as a light source, a beam bender for reflecting light, a beam splitter for dispersing light in two directions, and an XY stage Each of the two X-axis and Y-axis bar miller attached to the upper end, and the receiver receives the light reflected from the bar miller to detect the position of the stage.

제4도는 본 고안의 플로우 챠트로서, CPU에 의해 다음의 노광위치로 이동명령을 받아 X-Y 스테이지가 이동하게 된다. 이 때, He-Ne 레이저 헤드(1)에서 방출된 빔에 의해 계속적으로 위치 검출을 받아 목표치에 도달여부를 판단하게 된다.4 is a flowchart of the present invention, in which the X-Y stage is moved by receiving a movement instruction to the next exposure position by the CPU. At this time, the position is continuously detected by the beam emitted from the He-Ne laser head 1, and it is determined whether the target value is reached.

X-Y 스테이지에는 X1, X2바밀러(5a, 5b)와 Y1, Y2바밀러(6a, 6b)가 부착되어 있다.X 1 and X 2 bar mirrors 5a and 5b and Y 1 and Y 2 bar mirrors 6a and 6b are attached to the XY stage.

X-Y 스테이지가 목표치에 도달할 경우 X-Y 스테이지는 노광을 위해 정지하게 되며 노광 작업 후 반복작업을 실시하게 된다.When the X-Y stage reaches the target value, the X-Y stage stops for exposure and repeats the exposure operation.

위치검출 과정은, 먼저 He-Ne 레이저 헤드(1)에서 중성 빔은 방출된다.In the position detection process, first, a neutral beam is emitted from the He-Ne laser head 1.

방출된 중성빔은 빔 벤더(2)에 반사되고 반사된 중성빔은 다시 빔 스플릿터(3)에 의해 2개의 중성빔으로 분할된다.The emitted neutral beam is reflected by the beam bender 2 and the reflected neutral beam is again split into two neutral beams by the beam splitter 3.

2개의 중성빔으로 분할된 빛은 각각 X1바밀러(5a), Y1바밀러(6a)와 X2바밀러(5b), Y2바밀러(6b)로 향하게 된다.The light divided into two neutral beams is directed to X 1 bar miller 5a, Y 1 bar miller 6a, X 2 bar miller 5b, and Y 2 bar miller 6b, respectively.

이 때, X1, X2, Y1, Y2바밀러(5a, 5b, 6a, 6b)로부터 반사된 빛은 스테이지의 위치를 감지하는 리시버(4)에 의해 감지된다.At this time, the light reflected from the X 1 , X 2 , Y 1 , Y 2 bar miller 5a, 5b, 6a, 6b is sensed by the receiver 4 sensing the position of the stage.

He-Ne 레이저 빔은 간섭계를 통과하여 반사되는데 한 경우는 반사된 빛이 위상변환이 되지않은 상태로 리시버(4)로 향하게 되고, 또 한 경우는 바밀러(5a, 5b, 6a, 6b) 표면에 반사되어 위상변환된 상태로 리시버(4)로 향하게 된다.The He-Ne laser beam is reflected through the interferometer, in which case the reflected light is directed to the receiver 4 without being phase shifted, and in this case, the surface of the bar miller 5a, 5b, 6a, 6b. It is reflected by the light source and is turned to the receiver 4 in a phase shifted state.

이 때, 위상변환된 파형과 변환되지 않은 주파수 차에 의해 X-Y 스테이지의 현재 위치가 감지되어지며 이 값이 목표치에 도달하였는가를 시간 연속적으로 감지하여 목표치에서 정지하게 한다.At this time, the current position of the X-Y stage is sensed by the phase shifted waveform and the untransformed frequency difference, and it is continuously detected whether the value has reached the target value and stopped at the target value.

따라서, X축과 Y축에 각각 2개의 X1, X2바밀러(5a, 5b)와 Y1, Y2바밀러(6a, 6b)로 형성되어 각각의 이동 위치를 측정하므로 보다 정밀한 목표치에 도달할 수 있다.Therefore, two X 1 and X 2 bar millers 5a and 5b and Y 1 and Y 2 bar millers 6a and 6b are formed on the X and Y axes, respectively, and the respective moving positions are measured. Can be reached.

X-스테이지의 임의시간 t2에서의 위치 X2는, X2={(Xo1+β+e2)+(Xo2+γ+e3)}÷2, 여기서, (e2, e3는 바밀러 X1과 X2에서 측정된 위치 오차, β, γ는 X1과 X2의 이동량, Xo1, Xo2는 최초 바밀러의 위치)로 인식되어지면 오차항이1/2로 감소된 정밀한 목표치에 도달할 수 있다.Position X 2 in the arbitrary time t 2 of the X- stage, X 2 = {(Xo 1 + β + e 2) + (Xo 2 + γ + e 3)} ÷ 2, wherein, (e 2, e 3 of the bar mirror X 1 and the position error measured by X 2, β, γ is the amount of movement of the X 1 and X 2, Xo 1, Xo 2 is recognized as the position of the first bar mirror) when the error term is reduced to 1/2 Precise targets can be reached.

상술한 바와 같이 본 고안은 고정 밀도를 요구하는 반도체 장비 중 스테퍼의 위치 정지 정밀도를 향상시킬 수 있다.As described above, the present invention can improve the position stop accuracy of the stepper among the semiconductor equipment requiring high precision.

따라서, 초소형 반도체 회로 구성에 대단히 유리한 잇점이 있다.Therefore, there is an extremely advantageous advantage in the construction of a micro semiconductor circuit.

Claims (1)

광원인 He-Ne 레이저 헤드(1)와, 빛을 반사시키는 빔 벤더(2)와, 상기 빔 벤더(2)에서 반사된 빛을 2방향으로 분산시키는 빔 스플릿터(3)와, X-Y 스테이지의 상단부에 부착되는 각각 2개씩의 X축, Y축 바밀러(5a, 5b, 6a, 6b)와, 상기 바밀러(5a, 5b, 6a, 6b)로부터 반사된 빛을 받아 위상변환된 파형과 위상변환되지 않는 주파수 차이로 위치를 감지하는 리시버(4)로 구성되고, 상기 두개씩의 X축 Y축 바밀러는 X-Y 스테이지에 부착된 X1바밀러(5a), Y1바밀러(6a)와, X2바밀러(5b), Y2바밀러(6b)을 상호 각각 대응시켜 평행을 유지하도록 하여 He-Ne 레이저 광원을 직교성을 유지할수 있도록 구성된 것을 특징으로 하는 스테퍼 이동위치 측정장치.He-Ne laser head 1 as a light source, a beam bender 2 for reflecting light, a beam splitter 3 for dispersing the light reflected from the beam bender 2 in two directions, and an XY stage Each of the two X-axis and Y-axis bar millers 5a, 5b, 6a, and 6b attached to the upper end, and the phases of the waveforms and phases converted from the light reflected from the bar millers 5a, 5b, 6a and 6b And a receiver 4 for detecting a position by an unconverted frequency difference, wherein the two X-axis Y-axis bar miller are X 1 bar miller 5a, Y 1 bar miller 6a attached to the XY stage, A stepper movement position measuring device, characterized in that the He-Ne laser light source is configured to maintain orthogonality by keeping the X 2 bar miller (5b) and the Y 2 bar miller (6b) parallel to each other.
KR2019920008381U 1992-05-16 1992-05-16 Moving position measuring apparatus for stepper KR0122873Y1 (en)

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KR2019920008381U KR0122873Y1 (en) 1992-05-16 1992-05-16 Moving position measuring apparatus for stepper

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KR0122873Y1 true KR0122873Y1 (en) 1999-02-18

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