KR0121825Y1 - Membrane enhancing device - Google Patents
Membrane enhancing deviceInfo
- Publication number
- KR0121825Y1 KR0121825Y1 KR2019910019663U KR910019663U KR0121825Y1 KR 0121825 Y1 KR0121825 Y1 KR 0121825Y1 KR 2019910019663 U KR2019910019663 U KR 2019910019663U KR 910019663 U KR910019663 U KR 910019663U KR 0121825 Y1 KR0121825 Y1 KR 0121825Y1
- Authority
- KR
- South Korea
- Prior art keywords
- thin film
- upper electrode
- lower electrode
- electrode
- gas
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
본 고안은 박막증착장치에 관한 것으로 일측에 배출펌프를 설치한 챔버 내부에 상부전극과 하부전극을 구성하고, 상부전극에는 샘플 장착장치를 구비하며, 하부전극에는 프로세스개스가 공급되도록 다수의 개스유입공을 형성한 후, 그 상측에 확산막을 형성하여 구성함으로써 보다 양질의 박막층을 얻기 위한 것이다.The present invention relates to a thin film deposition apparatus comprising an upper electrode and a lower electrode in a chamber in which a discharge pump is installed on one side, a sample mounting device is provided on an upper electrode, and a plurality of gas inflows to supply process gas to a lower electrode. After forming the ball, a diffusion film is formed on the upper side to form a thin film layer of higher quality.
Description
제1도는 종래 박막증착장치의 구성 및 사용상태도.1 is a configuration and use state of the conventional thin film deposition apparatus.
제2도는 본 고안의 구성 및 사용상태도.2 is a configuration and use of the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1:챔버 1a:배출펌프1: Chamber 1a: Discharge pump
2:상부전극 3:하부전극2: upper electrode 3: lower electrode
3a:개스유입공 4:차단막3a: Gas inlet hole 4: Blocking film
본 고안은 양질의 박막을 얻기 위한 PECVD(Plasma Enhanced Chemical Vapor Deposition) 박막증착장치에 관한 것으로, 특히 샘플(Sample)을 상부 전극에 장착하고 하부전극에서 프로세서 개스(Process Gas)가 유입되게 하되 상기 하부전극 상측에 확산막을 형성하여 보다 양질의 박막을 얻도록 한 것이다.The present invention relates to a Plasma Enhanced Chemical Vapor Deposition (PECVD) thin film deposition apparatus for obtaining a high quality thin film, and in particular, a sample is mounted on an upper electrode and a process gas is introduced from the lower electrode, The diffusion film is formed on the upper side of the electrode to obtain a higher quality thin film.
종래에는 TFT 및 포토다이오드 어레이(Photo Diode Array)에서 사용되는 활성층과 보호막을 질화막(s-SiNx)이나 비정질 실리콘(a-SiH) 박막을 증착시키는 PECVD(Plasma Enhanced Chemical Vapor Deposition) 박막증착장치를 구성함에 있어서, 챔버(Cahmber)(1)의 상부에 RF파워(Power)가 인가되는 다수의 개스분출공(2a)을 형성한 상부전극(2)을 설치하고, 하부에 샘플(Sample)(5)을 장착토록 구성된 하부전극(3)을 온도조절 가능하게 설치하며 그 하단에 배출펌퍼(1a)를 구성하였다. 미설명 부호 6은 개스공급구이다.Conventionally, a PECVD (Plasma Enhanced Chemical Vapor Deposition) thin film deposition apparatus is formed by depositing an active layer and a protective film used in a TFT and a photo diode array (s-SiNx) or an amorphous silicon (a-SiH) thin film. The upper electrode 2 having a plurality of gas ejection holes 2a to which RF power is applied is installed on the chamber 1, and a sample 5 at the bottom. The lower electrode 3 configured to be mounted thereon was installed to be temperature-controlled, and a discharge pump 1a was formed at the bottom thereof. Reference numeral 6 is a gas supply port.
이와 같이 구성된 PECVD 박막증착장치는, 질화막(a-SiNx)을 증착시 사용개스는 NH3, SiH4, N2등이며 비정질 실리콘(a-SiH)을 증착시 사용되는 개스는 NH3, SiH4, H2등이다. 이런막을 증착시키기 위해 프로세서개스(Process Gas)를 상부전극(2)을 통하여 챔버(1)에 흘린상태에서 13.56MHy의 RF파워(Power)를 양 전극간에 걸어주면 프로세스개스가 분해되면서 활성분자가 형성된다.Thus configured PECVD film deposition apparatus includes a nitride (a-SiNx) using gas during the deposition of the NH 3, SiH 4, N 2, etc. The gas that is used when depositing the amorphous silicon (a-SiH) is NH 3, SiH 4 , H 2 and the like. In order to deposit such a film, the process gas decomposes and active molecules are formed by applying 13.56MHy RF power between both electrodes while the process gas flows through the upper electrode 2 to the chamber 1. do.
이와 같이 형성된 활성분자들은 기판인 샘플(5)로 확산됨과 동시에 샘플(5)의 표면에서 흡착분자의 표면반응으로 증착이 이루어진다.The active molecules formed as described above are diffused into the sample 5 which is a substrate and are deposited by the surface reaction of the adsorption molecules on the surface of the sample 5.
즉 상부전극쪽으로 여러 프로세스 개스가 유입되며 RF(13.56MHy)파워역시 상부전극쪽에 걸어준다.That is, several process gases flow into the upper electrode and RF (13.56MHy) power is also applied to the upper electrode.
그러면 유입된 프로세스개스가 양 전극간 RF파워에 의해 활성종(Radical)이 생성되어 하부전극쪽으로 확산되면서 기판표면에 반응하여 증착되어 간다. 그러나 이와 같은 박막증착장치에서는 증착시키고자 하는 샘플이 하부전극 상면에 위치하고 있기 때문에 활성종등이 위치에 아래로 확산될 때 상부전극 및 챔버 벽에 붙어있던 미분자등이 함께 증착될 수 있어 양질의 박막을 얻기 어렵다. 특히 단일 챔버에서 서로 다른 종류의 박막을 증착시 더욱 심한 현상이 나타날 뿐만 아니라 큰 면적을 증착할 경우 개스가 나오는 부근과 그 이외의 바깥쪽 부분의 두께차가 생겨서 유니포미티(Uniformity)면에서 나쁜 영향을 미치는 등 많은 문제점이 있었다.Then, the introduced process gas is generated by the active species (Radical) by the RF power between the two electrodes and diffused toward the lower electrode is deposited in response to the surface of the substrate. However, in such a thin film deposition apparatus, since the sample to be deposited is located on the upper surface of the lower electrode, when the active species is diffused down to the position, fine particles attached to the upper electrode and the chamber wall can be deposited together. Difficult to get. In particular, when depositing different types of thin films in a single chamber, not only the more severe phenomenon occurs, but when a large area is deposited, there is a bad effect on the uniformity due to the difference in thickness between the gas exit and the outside portion. There were many problems such as exaggeration.
본 고안은 상기한 종래의 제결함을 감안하여 PECVD(Plasma Enhanced Chemical Vapor Deposition)장치를 개량하여 질화막(a-SiNx) 및 비정질실리콘(a-Si:H) 박막증착시 발생되는 미분자(Particle)을 없애고 대면적에 증착할 경우 생길 수 있는 두께 유니포미티(Uniformity)를 최소한으로 하여 보다 양질의 박막을 얻기위한데 그 목적을 둔것으로 이를 첨부도면 제2도에 의거 상세히 설명하면 다음과 같다.The present invention improves the Plasma Enhanced Chemical Vapor Deposition (PECVD) device in view of the above-mentioned conventional defects, thereby reducing the particles generated during the deposition of a nitride film (a-SiNx) and amorphous silicon (a-Si: H) thin film. The purpose is to obtain a thin film of higher quality by minimizing the thickness uniformity that can occur when the deposition is carried out in a large area. The purpose of this is as described in detail with reference to FIG.
일측에 배출펌퍼(1a)를 설치한 챔버(1) 내부에 상부전극(2)과 하부전극(3)을 구성하고 상부전극(2)에는 샘플장착장치를 구비하며 하부전극(3)에는 다수의 개스유입공(3a)을 형성하여 프로세서개스를 공급토록 하였으며 상기 하부전극(3) 상측에 확산막(4)을 형성하여 구성하는 것이다.The upper electrode 2 and the lower electrode 3 are formed in the chamber 1 in which the discharge pump 1a is installed on one side, and the upper electrode 2 is provided with a sample mounting device. The gas inlet hole 3a is formed to supply the processor gas, and the diffusion film 4 is formed on the lower electrode 3.
이와 같이 구성된 본 고안은 박막처리하고자 하는 샘플(5)을 상부전극(2)에 장착하고 하부전극(3)을 통하여 프로세서개스를 챔버(1) 내부로 주입시키는 상태에서 13.56MHy의 RF파워(Power)를 양 전극간에 걸어주면 프로세서 개스가 분해되면서 활성분자가 형성되어 샘플(5)의 표면에서 흡착분자의 표면방으로 증착이 이루어지는데 이때 프로세스개스가 주입되는 하부 전극(3) 상측에 설치된 확산막(4)에 의하여 활성분자는 고르게 확산되어 샘플(5)에 증착된다.The present invention configured as described above has a RF power of 13.56MHy in a state in which the sample 5 to be thin film is mounted on the upper electrode 2 and the processor gas is injected into the chamber 1 through the lower electrode 3. ) Is placed between the two electrodes to decompose the processor gas, so that active molecules are formed and vapor deposition is carried out from the surface of the sample 5 to the surface of the adsorption molecules. At this time, the diffusion film is installed above the lower electrode 3 into which the process gas is injected. By (4), the active molecules are evenly diffused and deposited on the sample 5.
이때 증착시 발생된 미분자(Particle)은 자중으로 떨어지던중 챔버(1) 일측에 형성된 배출펌프(1a)를 통하여 배출된다.At this time, the particles generated during deposition are discharged through the discharge pump 1a formed at one side of the chamber 1 while falling to its own weight.
상기한 바와 같이 본 고안은 샘플을 상부전극에 장착하여 박막증착을 하기 때문에 프로세스 개스가 챔버내에 주입된 상태에서 RF파워를 하부전극에 인가하면 프로세스개스가 활성종(Radical)으로 분해되어 상부전극측으로 확산 증착됨으로 챔버 벽등에 붙었던 미분자의 영향을 최소화할 수 있어 샘플에 미분자가 떨어져 박리현상이 발생될 우려가 없는 양질의 박막을 증착할 수 있으며 프로세스개스 주입부분에 차단막을 설치하여 개스가 샘플에 직접 분사되지 않고 확산 분포되어 분사되므로써 면적이 큰 샘플을 증착하여도 유니포미티(Uniformity)를 ±5% 이하로 줄일 수 있는 유용한 고안이다.As described above, the present invention mounts a sample on the upper electrode and deposits a thin film. Therefore, when RF power is applied to the lower electrode while the process gas is injected into the chamber, the process gas is decomposed into active species to the upper electrode side. It is possible to minimize the effect of fine particles stuck to the chamber wall by diffusion evaporation, so that it is possible to deposit high quality thin film without fear of peeling phenomenon due to fine particles falling on the sample. It is a useful design that can reduce uniformity to ± 5% or less even by depositing a large area by spraying by diffusion distribution rather than direct spraying.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019910019663U KR0121825Y1 (en) | 1991-11-16 | 1991-11-16 | Membrane enhancing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019910019663U KR0121825Y1 (en) | 1991-11-16 | 1991-11-16 | Membrane enhancing device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR930012104U KR930012104U (en) | 1993-06-25 |
| KR0121825Y1 true KR0121825Y1 (en) | 1998-08-17 |
Family
ID=19322345
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR2019910019663U KR0121825Y1 (en) | 1991-11-16 | 1991-11-16 | Membrane enhancing device |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR0121825Y1 (en) |
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1991
- 1991-11-16 KR KR2019910019663U patent/KR0121825Y1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR930012104U (en) | 1993-06-25 |
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