KR0119002B1 - Photo mask for semiconductor process - Google Patents
Photo mask for semiconductor processInfo
- Publication number
- KR0119002B1 KR0119002B1 KR1019940002278A KR19940002278A KR0119002B1 KR 0119002 B1 KR0119002 B1 KR 0119002B1 KR 1019940002278 A KR1019940002278 A KR 1019940002278A KR 19940002278 A KR19940002278 A KR 19940002278A KR 0119002 B1 KR0119002 B1 KR 0119002B1
- Authority
- KR
- South Korea
- Prior art keywords
- pattern
- photomask
- metal wiring
- forming
- metal
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title description 7
- 238000000034 method Methods 0.000 title description 4
- 229910052751 metal Inorganic materials 0.000 claims abstract description 28
- 239000002184 metal Substances 0.000 claims abstract description 28
- 230000000694 effects Effects 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims abstract description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- 230000004075 alteration Effects 0.000 abstract description 3
- 238000002834 transmittance Methods 0.000 abstract 3
- 206010010071 Coma Diseases 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000011651 chromium Substances 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
제1도는 라운딩 효과로 인한 포토마스크 상의 라인 패턴과 웨이퍼 상의 라인 패턴과의 차이를 나타내는 평면도.1 is a plan view showing the difference between the line pattern on the photomask and the line pattern on the wafer due to the rounding effect.
제2도는 본 발명에 따른 라운딩 효과 감쇠를 위한 마스크의 일예시도.2 is an illustration of a mask for attenuating rounding effects in accordance with the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 포토마스크 상의금속 배선 패턴 2 : 포토레지스트 패턴1: Metal Wiring Pattern on Photomask 2: Photoresist Pattern
10 : 보조 패턴10: auxiliary pattern
본 발명은 반도체 장치 제조 분야에 관한 것으로, 특히 반도체 장치 제조공정 중 금속 배선 형성을 위한 포토마스크에 관한 것이다. 첨부된 도면 제1도는 종래 기술에 따른 금속 배선 형성을 위한 포토마스크 상의 금속 배선 패턴(1) 및 그를 사용하여 포토리소그래피 공정을 진행한 경우 웨이퍼 상에 형성된 금속 배선 패턴(2)을 도시한 것이다. 도시된 바와 같이 포토마스크 상에 곧게 형성된 금속 배선 패턴(1)은 포토리소그라피 공정을 통해 웨이퍼 상에 전사될 때, 광원의 수차(aberration)중 혜성의 수차(coma aberration)에 기인하는 라운딩 효과(rounding effect)로 인하여 웨이퍼 상의 포토레지스트 패턴(2)의 각진 부분이 둥글게 형성된다. 반도체 장치의 고집적화에 따라 미세한 선폭을 가지는 금속 배선이 요구되고 있으며 또한, 금속 배선 간의 공정 마진이 작아짐에 따라 금속 배선 간의 브릿지(bridge) 현상 등이 유발되어 반도체 장치의 신뢰도를 저하시키는 요인이 된다. 따라서, 금속 배선 형성시의 정확한 패턴의 전사가 절실히 요구되고 있다. 이를 위한 기술로써 이상기(phase shifter)를 사용하여 정확한 패턴을 구현하는 위상반전 마스크가 대두되고 있으나, 이는 통상적인 포토마스크(레티클) 제조시와 비교할 때 제조 비용이 월등히 높아 반도체 장치의 단가를 높이는 문제점이 따른다. 상기와 같은 문제점을 해결하기 위하여 안출된 본 발명은 포토마스크 상의 금속 배선 패턴의 각진 부위에서 발생하는 라운딩 효과를 보상해 주기 위하여 금속 배선 패턴의 각진 부위의 안쪽 및 바깥쪽에 각각 보조패턴을 형성함으로써 웨이퍼 상에 형성되는 포토레지스트 패턴이 정확히 형성되도록 하는 라인 패턴 형성을 위한 포토마스크를 제공하는데 그 목적이 있다. 상기 목적을 달성하기 위하여 본 발명의 금속 배선 형성을 위한 포토마스크는 그 경로 상에 각진 부위를 가지는 금속 배선을 형성하기 위한 포토마스크에 있어서, 상기 금속 배선의 형상을 웨이퍼 상에 전사하기 위한 주 패턴과, 상기 주 패턴의 각진 부위의 안쪽 및 바깥쪽에 각각 배치되어, 라운딩 효과에 의한 상기 금속 배선 패턴의 변형을 보상하기 위한 소정 크기의 보조 패턴을 포함하여 이루어진다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the field of semiconductor device manufacturing, and more particularly, to a photomask for forming metal wirings in a semiconductor device manufacturing process. 1 shows a metal wiring pattern 1 on a photomask for forming metal wirings according to the prior art, and a metal wiring pattern 2 formed on a wafer when a photolithography process is performed using the same. As shown, when the metallization pattern 1 formed straight on the photomask is transferred onto the wafer through a photolithography process, a rounding effect due to the comea aberration during the aberration of the light source is rounded. effect), the angular portion of the photoresist pattern 2 on the wafer is rounded. As the integration of semiconductor devices is increased, metal wirings having a fine line width are required, and as the process margin between the metal wirings is reduced, a bridge phenomenon between the metal wirings is caused, which causes a decrease in reliability of the semiconductor device. Therefore, the accurate pattern transfer at the time of metal wiring formation is urgently required. As a technology for this purpose, a phase shift mask that realizes an accurate pattern by using a phase shifter has emerged. However, this is a problem that increases the cost of semiconductor devices due to a significantly higher manufacturing cost compared with a conventional photomask (reticle) manufacturing. This follows. The present invention has been made in order to solve the problems described above, the wafer by forming an auxiliary pattern on the inside and the outside of the angled portion of the metal wiring pattern to compensate for the rounding effect occurring at the angled portion of the metal wiring pattern on the photomask An object of the present invention is to provide a photomask for forming a line pattern to accurately form a photoresist pattern formed on the substrate. In order to achieve the above object, a photomask for forming a metal wiring of the present invention is a photomask for forming a metal wiring having an angled portion on a path thereof, the main pattern for transferring the shape of the metal wiring onto a wafer. And an auxiliary pattern having a predetermined size to be disposed inside and outside the angled portions of the main pattern to compensate for deformation of the metal wiring pattern due to a rounding effect.
이하, 첨부된 도면 제2도를 참조하여 본 발명의 일실시예를 상술한다. 제2도에 도시된 바와 같이 빛 투과를 억제하는 크롬(Cr)과 같은 물질이 형성하고자 하는 패턴과 동일한 형상의 패턴으로 형성된 포토마스크 상의 금속 배선 패턴(1) 경로 상의 각진 부위에서 빛의 회절 등에 의해 유발되는 라운딩 효과에 기인한 웨이퍼 상의 포토레지스트 패턴(2)의 변형을 보상하기 위하여, 각진 부위의 안쪽 및 바깥쪽에 각각 보조 패턴(10)을 형성한다. 이때, 보조 패턴(10)을 이루는 물질은 포토마스크 상의금속 배선 패턴(1)을 이루는 물질 즉, 크롬 패턴을 사용한다. 또한, 상기한 포토마스크를 사용하여 포지티브(Positive) 포토레지스트를 노광하고, 이를 현상하여 금속 배선 형성을 위한 포토레지스트 패턴(2)을 형성한다. 이후, 이를 식각 마스크로 하여 하부의 금속막을 선택적 식각함으로써 정확한 금속 배선을 형성할 수 있게 된다. 이상에서 설명한 본 발명은 전술한 실시예 및 첨부된 도면에 의해 한정되는 것이 아니고, 본 발명의 기술적 사상을 벗어나지 않는 범위 내에서 여려 가지 치환, 변형 및 변경이 가능하다는 것이 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에게 있어 명백할 것이다. 상기와 같이 이루어지는 본 발명은 금속 배선 형성시 경제성이 없는 이상기(Phase Shifter)를 이용하지 않고, 보조 패턴을 사용하여 포토마스크 상의 금속 배선 패턴을 웨이퍼 상에 충실히 전사할 수 있게 되어 금속 배선 등의 라인 패턴 형성시에 브리지(bridge) 등을 방지하는 효과가 있다. 또한, 이로 인하여 반도체 장치의 신뢰도 및 수율의 향상을 기대할 수 있다.Hereinafter, an embodiment of the present invention will be described in detail with reference to FIG. 2. As shown in FIG. 2, diffraction of light at an angled portion on a metal wiring pattern 1 path on a photomask formed in a pattern having the same shape as a pattern to be formed by a material such as chromium (Cr) that suppresses light transmission. In order to compensate for the deformation of the photoresist pattern 2 on the wafer due to the rounding effect caused by the rounding effect, the auxiliary pattern 10 is formed inside and outside the angled portions, respectively. In this case, the material forming the auxiliary pattern 10 uses a material forming the metal wiring pattern 1 on the photomask, that is, a chromium pattern. In addition, a positive photoresist is exposed using the above-described photomask and developed to form a photoresist pattern 2 for forming metal wirings. Subsequently, by using this as an etching mask, the lower metal film may be selectively etched to form accurate metal wiring. The present invention described above is not limited to the above-described embodiments and the accompanying drawings, and various substitutions, modifications, and changes are possible in the art without departing from the technical spirit of the present invention. It will be clear to those of ordinary knowledge. According to the present invention as described above, the metal wiring pattern on the photomask can be faithfully transferred onto the wafer using an auxiliary pattern without using a phase shifter which is not economical in forming the metal wiring. There is an effect of preventing a bridge or the like during pattern formation. In addition, it is possible to expect the improvement of the reliability and the yield of the semiconductor device.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940002278A KR0119002B1 (en) | 1994-02-07 | 1994-02-07 | Photo mask for semiconductor process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940002278A KR0119002B1 (en) | 1994-02-07 | 1994-02-07 | Photo mask for semiconductor process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR950025906A KR950025906A (en) | 1995-09-18 |
| KR0119002B1 true KR0119002B1 (en) | 1997-09-30 |
Family
ID=19376943
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019940002278A KR0119002B1 (en) | 1994-02-07 | 1994-02-07 | Photo mask for semiconductor process |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR0119002B1 (en) |
-
1994
- 1994-02-07 KR KR1019940002278A patent/KR0119002B1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR950025906A (en) | 1995-09-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5723236A (en) | Photomasks and a manufacturing method thereof | |
| US6010807A (en) | Phase-shifting mask for photolithography in semiconductor fabrications | |
| TW201421148A (en) | Photo mask for manufacturing a display device and pattern transfer method | |
| TWI777402B (en) | Photomask for use in manufacturing a display device and method of manufacturing a display device | |
| KR20020074546A (en) | Phase shifting mask for manufacturing semiconductor device and fabricating method thereof | |
| KR19980025511A (en) | Masks used in stitching exposure process | |
| JPH11143047A (en) | Photomask and its production | |
| JP3283624B2 (en) | Photo mask | |
| KR100219079B1 (en) | Phase shift mask | |
| JP3241628B2 (en) | Semiconductor device manufacturing equipment | |
| KR100280035B1 (en) | Phase Shift Photomask | |
| KR0119002B1 (en) | Photo mask for semiconductor process | |
| JPH1115128A (en) | Photomask and pattern formation using the same | |
| KR100236075B1 (en) | Mask pattern | |
| JP3462650B2 (en) | Resist exposure method and method of manufacturing semiconductor integrated circuit device | |
| US5908718A (en) | Phase shifting photomask with two different transparent regions | |
| JPH09288346A (en) | Photomask | |
| KR102555946B1 (en) | Photomask | |
| JPH06289590A (en) | Photomask and exposing method | |
| KR970006722B1 (en) | Phase shift mast and fabrication method | |
| KR0151228B1 (en) | Photomask for preparing resist pattern | |
| US7476472B2 (en) | Method for designing photomask | |
| US20020177047A1 (en) | Photomask and method for manufacturing the same | |
| JPH04269749A (en) | Photomask and its manufacture | |
| JPH04268556A (en) | Formation of resist pattern |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| G160 | Decision to publish patent application | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20100624 Year of fee payment: 14 |
|
| LAPS | Lapse due to unpaid annual fee |