JPWO2025022733A1 - - Google Patents
Info
- Publication number
- JPWO2025022733A1 JPWO2025022733A1 JP2025535576A JP2025535576A JPWO2025022733A1 JP WO2025022733 A1 JPWO2025022733 A1 JP WO2025022733A1 JP 2025535576 A JP2025535576 A JP 2025535576A JP 2025535576 A JP2025535576 A JP 2025535576A JP WO2025022733 A1 JPWO2025022733 A1 JP WO2025022733A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
- H03K17/605—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors with galvanic isolation between the control circuit and the output circuit
- H03K17/61—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/689—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
- H03K17/691—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Power Conversion In General (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023120840 | 2023-07-25 | ||
| PCT/JP2024/014814 WO2025022733A1 (ja) | 2023-07-25 | 2024-04-12 | 駆動回路および動作方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2025022733A1 true JPWO2025022733A1 (https=) | 2025-01-30 |
| JPWO2025022733A5 JPWO2025022733A5 (https=) | 2026-04-23 |
Family
ID=94374200
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025535576A Pending JPWO2025022733A1 (https=) | 2023-07-25 | 2024-04-12 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPWO2025022733A1 (https=) |
| WO (1) | WO2025022733A1 (https=) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0153423B1 (en) * | 1984-02-20 | 1988-02-10 | HONEYWELL BULL ITALIA S.p.A. | Power fet driving circuit |
| US8283896B1 (en) * | 2009-06-03 | 2012-10-09 | Polarity, Inc. | Method and system for charging and discharging high-voltage energy storage devices |
| AT515848B1 (de) * | 2014-05-15 | 2020-09-15 | Fronius Int Gmbh | Schaltungsanordnung und Verfahren zum Ansteuern eines Halbleiterschaltelements |
| EP3186888B1 (en) * | 2014-11-06 | 2021-05-05 | Ideal Power Inc. | Circuits, methods, and systems with optimized operation of double-base bipolar junction transistors |
| JP5930560B1 (ja) * | 2015-01-30 | 2016-06-08 | 株式会社京三製作所 | 高周波絶縁ゲートドライバ回路、及びゲート回路駆動方法 |
-
2024
- 2024-04-12 JP JP2025535576A patent/JPWO2025022733A1/ja active Pending
- 2024-04-12 WO PCT/JP2024/014814 patent/WO2025022733A1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2025022733A1 (ja) | 2025-01-30 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20251030 |