JPWO2025022643A1 - - Google Patents
Info
- Publication number
- JPWO2025022643A1 JPWO2025022643A1 JP2025535527A JP2025535527A JPWO2025022643A1 JP WO2025022643 A1 JPWO2025022643 A1 JP WO2025022643A1 JP 2025535527 A JP2025535527 A JP 2025535527A JP 2025535527 A JP2025535527 A JP 2025535527A JP WO2025022643 A1 JPWO2025022643 A1 JP WO2025022643A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2023/027570 WO2025022643A1 (ja) | 2023-07-27 | 2023-07-27 | 半導体レーザおよびその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2025022643A1 true JPWO2025022643A1 (https=) | 2025-01-30 |
Family
ID=94374178
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025535527A Pending JPWO2025022643A1 (https=) | 2023-07-27 | 2023-07-27 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPWO2025022643A1 (https=) |
| WO (1) | WO2025022643A1 (https=) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62213117A (ja) * | 1986-03-13 | 1987-09-19 | Oki Electric Ind Co Ltd | 半導体素子の製造方法 |
| JPH05206565A (ja) * | 1991-06-12 | 1993-08-13 | Oki Electric Ind Co Ltd | 半導体レーザ素子 |
| WO2021005700A1 (ja) * | 2019-07-09 | 2021-01-14 | 日本電信電話株式会社 | 半導体光素子 |
| US11437781B2 (en) * | 2020-02-27 | 2022-09-06 | Qualcomm Incorporated | Distributed feedback (DFB) laser on silicon and integrated device comprising a DFB laser on silicon |
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2023
- 2023-07-27 JP JP2025535527A patent/JPWO2025022643A1/ja active Pending
- 2023-07-27 WO PCT/JP2023/027570 patent/WO2025022643A1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2025022643A1 (ja) | 2025-01-30 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20260415 |