JPWO2024172018A1 - - Google Patents
Info
- Publication number
- JPWO2024172018A1 JPWO2024172018A1 JP2025501149A JP2025501149A JPWO2024172018A1 JP WO2024172018 A1 JPWO2024172018 A1 JP WO2024172018A1 JP 2025501149 A JP2025501149 A JP 2025501149A JP 2025501149 A JP2025501149 A JP 2025501149A JP WO2024172018 A1 JPWO2024172018 A1 JP WO2024172018A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023020278 | 2023-02-13 | ||
| PCT/JP2024/004790 WO2024172018A1 (ja) | 2023-02-13 | 2024-02-13 | プラズマ処理方法、プリコートの形成方法及びプラズマ処理装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2024172018A1 true JPWO2024172018A1 (enExample) | 2024-08-22 |
Family
ID=92419942
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025501149A Pending JPWO2024172018A1 (enExample) | 2023-02-13 | 2024-02-13 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20250364221A1 (enExample) |
| JP (1) | JPWO2024172018A1 (enExample) |
| KR (1) | KR20250150569A (enExample) |
| CN (1) | CN120712639A (enExample) |
| TW (1) | TW202439441A (enExample) |
| WO (1) | WO2024172018A1 (enExample) |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7316785B2 (en) | 2004-06-30 | 2008-01-08 | Lam Research Corporation | Methods and apparatus for the optimization of etch resistance in a plasma processing system |
| US7323401B2 (en) * | 2005-08-08 | 2008-01-29 | Applied Materials, Inc. | Semiconductor substrate process using a low temperature deposited carbon-containing hard mask |
| JP2010003807A (ja) * | 2008-06-19 | 2010-01-07 | Toshiba Corp | 半導体装置の製造方法 |
| JP7382761B2 (ja) * | 2019-08-21 | 2023-11-17 | 東京エレクトロン株式会社 | 処理装置および成膜方法 |
| CN115298798A (zh) * | 2020-03-18 | 2022-11-04 | 朗姆研究公司 | 调节等离子体处理室的方法 |
| JP7403382B2 (ja) * | 2020-05-01 | 2023-12-22 | 東京エレクトロン株式会社 | プリコート方法及び処理装置 |
| JP7580264B2 (ja) * | 2020-12-21 | 2024-11-11 | 東京エレクトロン株式会社 | 基板処理方法 |
-
2024
- 2024-02-13 JP JP2025501149A patent/JPWO2024172018A1/ja active Pending
- 2024-02-13 WO PCT/JP2024/004790 patent/WO2024172018A1/ja not_active Ceased
- 2024-02-13 CN CN202480010271.7A patent/CN120712639A/zh active Pending
- 2024-02-13 KR KR1020257029531A patent/KR20250150569A/ko active Pending
- 2024-02-15 TW TW113105277A patent/TW202439441A/zh unknown
-
2025
- 2025-08-04 US US19/289,276 patent/US20250364221A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| TW202439441A (zh) | 2024-10-01 |
| KR20250150569A (ko) | 2025-10-20 |
| US20250364221A1 (en) | 2025-11-27 |
| CN120712639A (zh) | 2025-09-26 |
| WO2024172018A1 (ja) | 2024-08-22 |