JPWO2024141883A1 - - Google Patents
Info
- Publication number
- JPWO2024141883A1 JPWO2024141883A1 JP2024566914A JP2024566914A JPWO2024141883A1 JP WO2024141883 A1 JPWO2024141883 A1 JP WO2024141883A1 JP 2024566914 A JP2024566914 A JP 2024566914A JP 2024566914 A JP2024566914 A JP 2024566914A JP WO2024141883 A1 JPWO2024141883 A1 JP WO2024141883A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022211410 | 2022-12-28 | ||
| JP2022211413 | 2022-12-28 | ||
| PCT/IB2023/063061 WO2024141883A1 (ja) | 2022-12-28 | 2023-12-21 | 半導体装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2024141883A1 true JPWO2024141883A1 (https=) | 2024-07-04 |
Family
ID=91716595
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024566914A Pending JPWO2024141883A1 (https=) | 2022-12-28 | 2023-12-21 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPWO2024141883A1 (https=) |
| WO (1) | WO2024141883A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2026058122A1 (ja) * | 2024-09-13 | 2026-03-19 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9691772B2 (en) * | 2011-03-03 | 2017-06-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device including memory cell which includes transistor and capacitor |
| US8772849B2 (en) * | 2011-03-10 | 2014-07-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device |
| US9343579B2 (en) * | 2013-05-20 | 2016-05-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2016128859A1 (en) * | 2015-02-11 | 2016-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| KR102864089B1 (ko) * | 2020-11-11 | 2025-09-23 | 삼성전자주식회사 | 전계 효과 트랜지스터, 전계 효과 트랜지스터 어레이 구조 및 전계 효과 트랜지스터 제조 방법 |
-
2023
- 2023-12-21 WO PCT/IB2023/063061 patent/WO2024141883A1/ja not_active Ceased
- 2023-12-21 JP JP2024566914A patent/JPWO2024141883A1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2024141883A1 (ja) | 2024-07-04 |