JPWO2024034267A1 - - Google Patents
Info
- Publication number
- JPWO2024034267A1 JPWO2024034267A1 JP2024540295A JP2024540295A JPWO2024034267A1 JP WO2024034267 A1 JPWO2024034267 A1 JP WO2024034267A1 JP 2024540295 A JP2024540295 A JP 2024540295A JP 2024540295 A JP2024540295 A JP 2024540295A JP WO2024034267 A1 JPWO2024034267 A1 JP WO2024034267A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022126501 | 2022-08-08 | ||
| PCT/JP2023/022960 WO2024034267A1 (ja) | 2022-08-08 | 2023-06-21 | 炭化珪素基板、炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2024034267A1 true JPWO2024034267A1 (https=) | 2024-02-15 |
| JPWO2024034267A5 JPWO2024034267A5 (https=) | 2025-04-21 |
Family
ID=89851301
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024540295A Pending JPWO2024034267A1 (https=) | 2022-08-08 | 2023-06-21 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPWO2024034267A1 (https=) |
| WO (1) | WO2024034267A1 (https=) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5465295B2 (ja) * | 2012-08-31 | 2014-04-09 | 富士通株式会社 | 化合物半導体装置、およびその製造方法 |
| JP6030733B2 (ja) * | 2015-11-05 | 2016-11-24 | 住友化学株式会社 | トランジスタ用窒化物半導体エピタキシャルウエハ及び窒化物半導体電界効果トランジスタ |
| KR102192525B1 (ko) * | 2020-02-28 | 2020-12-17 | 에스케이씨 주식회사 | 웨이퍼, 에피택셜 웨이퍼 및 이의 제조방법 |
-
2023
- 2023-06-21 JP JP2024540295A patent/JPWO2024034267A1/ja active Pending
- 2023-06-21 WO PCT/JP2023/022960 patent/WO2024034267A1/ja not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| WO2024034267A1 (ja) | 2024-02-15 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20250131 |
|
| A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20260325 |
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| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20260406 |