JPWO2023223589A1 - - Google Patents
Info
- Publication number
- JPWO2023223589A1 JPWO2023223589A1 JP2024521549A JP2024521549A JPWO2023223589A1 JP WO2023223589 A1 JPWO2023223589 A1 JP WO2023223589A1 JP 2024521549 A JP2024521549 A JP 2024521549A JP 2024521549 A JP2024521549 A JP 2024521549A JP WO2023223589 A1 JPWO2023223589 A1 JP WO2023223589A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022082046 | 2022-05-19 | ||
| PCT/JP2022/046592 WO2023223589A1 (ja) | 2022-05-19 | 2022-12-19 | 半導体チップ |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2023223589A1 true JPWO2023223589A1 (https=) | 2023-11-23 |
Family
ID=88835146
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024521549A Pending JPWO2023223589A1 (https=) | 2022-05-19 | 2022-12-19 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPWO2023223589A1 (https=) |
| WO (1) | WO2023223589A1 (https=) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9716168B2 (en) * | 2014-09-24 | 2017-07-25 | Shindengen Electric Manufacturing Co., Ltd. | Silicon carbide semiconductor device, method of manufacturing silicon carbide semiconductor device and method of designing silicon carbide semiconductor device |
| JP6439460B2 (ja) * | 2015-01-23 | 2018-12-19 | 株式会社デンソー | 駆動装置 |
| US10530360B2 (en) * | 2016-02-29 | 2020-01-07 | Infineon Technologies Austria Ag | Double gate transistor device and method of operating |
| JP6896673B2 (ja) * | 2018-03-23 | 2021-06-30 | 株式会社東芝 | 半導体装置 |
| JP7484093B2 (ja) * | 2019-06-24 | 2024-05-16 | 富士電機株式会社 | 半導体装置 |
-
2022
- 2022-12-19 JP JP2024521549A patent/JPWO2023223589A1/ja active Pending
- 2022-12-19 WO PCT/JP2022/046592 patent/WO2023223589A1/ja not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023223589A1 (ja) | 2023-11-23 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20251121 |
|
| A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20260407 |