JPWO2023162161A1 - - Google Patents

Info

Publication number
JPWO2023162161A1
JPWO2023162161A1 JP2024502392A JP2024502392A JPWO2023162161A1 JP WO2023162161 A1 JPWO2023162161 A1 JP WO2023162161A1 JP 2024502392 A JP2024502392 A JP 2024502392A JP 2024502392 A JP2024502392 A JP 2024502392A JP WO2023162161 A1 JPWO2023162161 A1 JP WO2023162161A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024502392A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023162161A1 publication Critical patent/JPWO2023162161A1/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0431Apparatus for thermal treatment
    • H10P72/0434Apparatus for thermal treatment mainly by convection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • H01J37/32449Gas control, e.g. control of the gas flow
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F25REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
    • F25DREFRIGERATORS; COLD ROOMS; ICE-BOXES; COOLING OR FREEZING APPARATUS NOT OTHERWISE PROVIDED FOR
    • F25D3/00Devices using other cold materials; Devices using cold-storage bodies
    • F25D3/10Devices using other cold materials; Devices using cold-storage bodies using liquefied gases, e.g. liquid air
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32458Vessel
    • H01J37/32522Temperature
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32715Workpiece holder
    • H01J37/32724Temperature
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/20Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/20Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/73Etching of wafers, substrates or parts of devices using masks for insulating materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0402Apparatus for fluid treatment
    • H10P72/0418Apparatus for fluid treatment for etching
    • H10P72/0421Apparatus for fluid treatment for etching for drying etching
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/002Cooling arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001Maintaining constant desired temperature
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Combustion & Propulsion (AREA)
  • Mechanical Engineering (AREA)
  • Thermal Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2024502392A 2022-02-25 2022-02-25 Pending JPWO2023162161A1 (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/007982 WO2023162161A1 (ja) 2022-02-25 2022-02-25 温調システム、温調方法、基板処理方法及び基板処理装置

Publications (1)

Publication Number Publication Date
JPWO2023162161A1 true JPWO2023162161A1 (https=) 2023-08-31

Family

ID=87765101

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024502392A Pending JPWO2023162161A1 (https=) 2022-02-25 2022-02-25

Country Status (5)

Country Link
US (1) US20240412955A1 (https=)
JP (1) JPWO2023162161A1 (https=)
KR (1) KR20240153992A (https=)
TW (1) TW202414572A (https=)
WO (1) WO2023162161A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202539010A (zh) * 2024-02-22 2025-10-01 日商東京威力科創股份有限公司 調溫系統及調溫系統之控制方法
CN121359240A (zh) * 2024-02-22 2026-01-16 东京毅力科创株式会社 温度调节系统以及温度调节系统的控制方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003139423A (ja) * 2002-08-12 2003-05-14 Sanyo Electric Co Ltd 冷媒回路
JP2006269944A (ja) * 2005-03-25 2006-10-05 Tokyo Electron Ltd 温度調整方法,温度調整装置,プラズマ処理装置
JP2009523859A (ja) * 2006-01-13 2009-06-25 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー パーフルオロポリエーテルを含有する冷媒添加剤組成物
JP2013544135A (ja) * 2010-10-27 2013-12-12 クライオメディクス、エルエルシー 改良された熱交換領域を有する冷凍アブレーション装置及び関連方法
JP2019529982A (ja) * 2016-09-02 2019-10-17 エーエスエムエル ネザーランズ ビー.ブイ. リソグラフィ装置
JP2021174985A (ja) * 2020-04-30 2021-11-01 東京エレクトロン株式会社 基板処理方法、プラズマ処理装置、及びエッチングガス組成物

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003347283A (ja) 2002-05-30 2003-12-05 Tokyo Electron Ltd 真空処理装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003139423A (ja) * 2002-08-12 2003-05-14 Sanyo Electric Co Ltd 冷媒回路
JP2006269944A (ja) * 2005-03-25 2006-10-05 Tokyo Electron Ltd 温度調整方法,温度調整装置,プラズマ処理装置
JP2009523859A (ja) * 2006-01-13 2009-06-25 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー パーフルオロポリエーテルを含有する冷媒添加剤組成物
JP2013544135A (ja) * 2010-10-27 2013-12-12 クライオメディクス、エルエルシー 改良された熱交換領域を有する冷凍アブレーション装置及び関連方法
JP2019529982A (ja) * 2016-09-02 2019-10-17 エーエスエムエル ネザーランズ ビー.ブイ. リソグラフィ装置
JP2021174985A (ja) * 2020-04-30 2021-11-01 東京エレクトロン株式会社 基板処理方法、プラズマ処理装置、及びエッチングガス組成物

Also Published As

Publication number Publication date
TW202414572A (zh) 2024-04-01
KR20240153992A (ko) 2024-10-24
US20240412955A1 (en) 2024-12-12
WO2023162161A1 (ja) 2023-08-31

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