JPWO2023144652A1 - - Google Patents

Info

Publication number
JPWO2023144652A1
JPWO2023144652A1 JP2023576252A JP2023576252A JPWO2023144652A1 JP WO2023144652 A1 JPWO2023144652 A1 JP WO2023144652A1 JP 2023576252 A JP2023576252 A JP 2023576252A JP 2023576252 A JP2023576252 A JP 2023576252A JP WO2023144652 A1 JPWO2023144652 A1 JP WO2023144652A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023576252A
Other languages
Japanese (ja)
Other versions
JPWO2023144652A5 (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023144652A1 publication Critical patent/JPWO2023144652A1/ja
Publication of JPWO2023144652A5 publication Critical patent/JPWO2023144652A5/ja
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/06Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/10Arrangements for interconnecting storage elements electrically, e.g. by wiring for interconnecting capacitors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B41/00Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/01Manufacture or treatment
    • H10D30/021Manufacture or treatment of FETs having insulated gates [IGFET]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/68Floating-gate IGFETs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/69IGFETs having charge trapping gate insulators, e.g. MNOS transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
JP2023576252A 2022-01-28 2023-01-16 Pending JPWO2023144652A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022012185 2022-01-28
PCT/IB2023/050352 WO2023144652A1 (ja) 2022-01-28 2023-01-16 記憶装置

Publications (2)

Publication Number Publication Date
JPWO2023144652A1 true JPWO2023144652A1 (https=) 2023-08-03
JPWO2023144652A5 JPWO2023144652A5 (https=) 2026-01-20

Family

ID=87470853

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023576252A Pending JPWO2023144652A1 (https=) 2022-01-28 2023-01-16

Country Status (3)

Country Link
US (1) US20250131949A1 (https=)
JP (1) JPWO2023144652A1 (https=)
WO (1) WO2023144652A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025078928A1 (ja) * 2023-10-13 2025-04-17 株式会社半導体エネルギー研究所 半導体装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013065638A (ja) * 2011-09-15 2013-04-11 Elpida Memory Inc 半導体装置
JP6607681B2 (ja) * 2014-03-07 2019-11-20 株式会社半導体エネルギー研究所 半導体装置
WO2020157553A1 (ja) * 2019-01-29 2020-08-06 株式会社半導体エネルギー研究所 記憶装置

Also Published As

Publication number Publication date
WO2023144652A1 (ja) 2023-08-03
US20250131949A1 (en) 2025-04-24

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Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20260109

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Effective date: 20260109