JPWO2023136183A1 - - Google Patents

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Publication number
JPWO2023136183A1
JPWO2023136183A1 JP2023573998A JP2023573998A JPWO2023136183A1 JP WO2023136183 A1 JPWO2023136183 A1 JP WO2023136183A1 JP 2023573998 A JP2023573998 A JP 2023573998A JP 2023573998 A JP2023573998 A JP 2023573998A JP WO2023136183 A1 JPWO2023136183 A1 JP WO2023136183A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2023573998A
Other languages
Japanese (ja)
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JP7480927B2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication of JPWO2023136183A1 publication Critical patent/JPWO2023136183A1/ja
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Publication of JP7480927B2 publication Critical patent/JP7480927B2/en
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Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Laminated Bodies (AREA)
JP2023573998A 2022-01-13 2022-12-28 Reflective mask blank, reflective mask, and method for manufacturing reflective mask Active JP7480927B2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022003847 2022-01-13
JP2022003847 2022-01-13
PCT/JP2022/048684 WO2023136183A1 (en) 2022-01-13 2022-12-28 Reflection-type mask blank, reflection-type mask, and method for producing reflection-type mask

Publications (2)

Publication Number Publication Date
JPWO2023136183A1 true JPWO2023136183A1 (en) 2023-07-20
JP7480927B2 JP7480927B2 (en) 2024-05-10

Family

ID=87279029

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023573998A Active JP7480927B2 (en) 2022-01-13 2022-12-28 Reflective mask blank, reflective mask, and method for manufacturing reflective mask

Country Status (3)

Country Link
JP (1) JP7480927B2 (en)
TW (1) TW202331406A (en)
WO (1) WO2023136183A1 (en)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001291661A (en) 2000-04-07 2001-10-19 Fujitsu Ltd Method of manufacturing reflection type mask
JP4163038B2 (en) 2002-04-15 2008-10-08 Ｈｏｙａ株式会社 Reflective mask blank, reflective mask, and semiconductor manufacturing method
US20040159538A1 (en) 2003-02-13 2004-08-19 Hans Becker Photo mask blank, photo mask, method and apparatus for manufacturing of a photo mask blank
US11500282B2 (en) * 2020-06-18 2022-11-15 Taiwan Semiconductor Manufacturing Co., Ltd. EUV photo masks and manufacturing method thereof

Also Published As

Publication number Publication date
JP7480927B2 (en) 2024-05-10
WO2023136183A1 (en) 2023-07-20
TW202331406A (en) 2023-08-01

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