JPWO2023126991A5 - - Google Patents

Description

A non-contact voltage sensor device according to the present disclosure includes a probe electrode, a first resistance element to which the probe electrode is connected to an input point and which simulates the insulation resistance of a coating material covering a core wire of an electric wire, a probe electrode and a coating material. an impedance circuit having a first capacitor element that simulates the coupling capacitance generated between the core wire of the electric wire and the ESR simulating circuit that simulates the dielectric loss in the coating material that constitutes the coupling capacitance, and a positive input terminal; An operational amplifier having a negative input terminal and an output terminal, a positive input terminal connected to a reference potential point, a negative input terminal connected to an input point of an impedance circuit, and an output terminal connected to an ESR simulation circuit.

According to the present disclosure, the impedance circuit includes an ESR simulating circuit that simulates the dielectric loss occurring between the probe electrode and the core wire of the electric wire via the sheathing material as an equivalent series resistance, and the dielectric loss is simulated as the complex impedance of the observation system. Simulates complex impedance. The negative input terminal of the operational amplifier is connected to the input point of the impedance circuit, and the input point is virtually short-circuited, so that the output waveform of the operational amplifier follows the observed waveform input to the impedance circuit with its phase reversed. works. As a result, the non-contact voltage sensor device according to the present disclosure is capable of suppressing the phase error of the observed waveform caused by the complex impedance of the observation system including the dielectric loss caused by the coupling capacitance in the coating material covering the core wire of the electric wire. can.

Claims (6)

a probe electrode;
a first resistance element to which the probe electrode is connected to an input point and which simulates the insulation resistance of a sheathing material covering a core wire of an electric wire; a coupling occurring between the probe electrode and the core wire of the electric wire via the sheathing material; an impedance circuit having a first capacitor element simulating capacitance, and an ESR simulating circuit simulating dielectric loss in the coating material constituting the coupling capacitance ;
It has a positive input terminal, a negative input terminal, and an output terminal, the positive input terminal is connected to a reference potential point, the negative input terminal is connected to the input point of the impedance circuit, and the output terminal is connected to the ESR simulation circuit. An operational amplifier connected to a non-contact voltage sensor device. The impedance circuit is characterized in that the first capacitor element is connected in series with the ESR simulation circuit, and the first resistance element is connected in parallel with the first capacitor element and the ESR simulation circuit. The non-contact voltage sensor device according to claim 1. The non-contact voltage sensor device according to claim 2 , wherein the ESR simulation circuit includes a second resistance element and a second capacitor element connected in parallel with the second resistance element. . The non-contact voltage sensor device according to claim 3, wherein the second resistance element has a variable resistance value. The non-contact voltage sensor device according to claim 1, further comprising an AD converter that converts an analog signal output from the output terminal of the operational amplifier into a digital signal and outputs the digital signal. The non-contact voltage sensor device according to claim 1, wherein the impedance circuit simulates a real number multiple of a complex impedance from the core wire of the electric wire to the input point.