JPWO2023119693A1 - - Google Patents

Info

Publication number
JPWO2023119693A1
JPWO2023119693A1 JP2023569042A JP2023569042A JPWO2023119693A1 JP WO2023119693 A1 JPWO2023119693 A1 JP WO2023119693A1 JP 2023569042 A JP2023569042 A JP 2023569042A JP 2023569042 A JP2023569042 A JP 2023569042A JP WO2023119693 A1 JPWO2023119693 A1 JP WO2023119693A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023569042A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023119693A1 publication Critical patent/JPWO2023119693A1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2023569042A 2021-12-20 2022-06-16 Pending JPWO2023119693A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021206356 2021-12-20
PCT/JP2022/024141 WO2023119693A1 (ja) 2021-12-20 2022-06-16 半導体装置

Publications (1)

Publication Number Publication Date
JPWO2023119693A1 true JPWO2023119693A1 (ja) 2023-06-29

Family

ID=86901705

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023569042A Pending JPWO2023119693A1 (ja) 2021-12-20 2022-06-16

Country Status (2)

Country Link
JP (1) JPWO2023119693A1 (ja)
WO (1) WO2023119693A1 (ja)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4793390B2 (ja) * 2008-02-13 2011-10-12 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP2011071161A (ja) * 2009-09-24 2011-04-07 Toshiba Corp 半導体素子及びその製造方法
JP6588363B2 (ja) * 2016-03-09 2019-10-09 トヨタ自動車株式会社 スイッチング素子
US10937901B2 (en) * 2018-03-14 2021-03-02 Fuji Electric Co., Ltd. Insulated gate semiconductor device with injuction supression structure and method of manufacturing same
JP7192504B2 (ja) * 2019-01-08 2022-12-20 株式会社デンソー 半導体装置
JP7263178B2 (ja) * 2019-08-02 2023-04-24 株式会社東芝 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機

Also Published As

Publication number Publication date
WO2023119693A1 (ja) 2023-06-29

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Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20230913