JPWO2023112312A1 - - Google Patents

Info

Publication number
JPWO2023112312A1
JPWO2023112312A1 JP2023567482A JP2023567482A JPWO2023112312A1 JP WO2023112312 A1 JPWO2023112312 A1 JP WO2023112312A1 JP 2023567482 A JP2023567482 A JP 2023567482A JP 2023567482 A JP2023567482 A JP 2023567482A JP WO2023112312 A1 JPWO2023112312 A1 JP WO2023112312A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023567482A
Other versions
JPWO2023112312A5 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023112312A1 publication Critical patent/JPWO2023112312A1/ja
Publication of JPWO2023112312A5 publication Critical patent/JPWO2023112312A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Formation Of Insulating Films (AREA)
JP2023567482A 2021-12-17 2021-12-17 Pending JPWO2023112312A1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/046752 WO2023112312A1 (ja) 2021-12-17 2021-12-17 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JPWO2023112312A1 true JPWO2023112312A1 (ja) 2023-06-22
JPWO2023112312A5 JPWO2023112312A5 (ja) 2024-03-05

Family

ID=86773943

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023567482A Pending JPWO2023112312A1 (ja) 2021-12-17 2021-12-17

Country Status (2)

Country Link
JP (1) JPWO2023112312A1 (ja)
WO (1) WO2023112312A1 (ja)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014060272A (ja) * 2012-09-18 2014-04-03 Sumitomo Electric Ind Ltd 炭化珪素半導体装置およびその製造方法
CN108352407A (zh) * 2015-11-12 2018-07-31 三菱电机株式会社 碳化硅半导体装置及碳化硅半导体装置的制造方法
WO2017138221A1 (ja) * 2016-02-08 2017-08-17 三菱電機株式会社 炭化珪素半導体装置およびその製造方法
JP6692265B2 (ja) * 2016-09-16 2020-05-13 株式会社東芝 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機

Also Published As

Publication number Publication date
WO2023112312A1 (ja) 2023-06-22

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Legal Events

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