JPWO2023079957A1 - - Google Patents
Info
- Publication number
 - JPWO2023079957A1 JPWO2023079957A1 JP2022564208A JP2022564208A JPWO2023079957A1 JP WO2023079957 A1 JPWO2023079957 A1 JP WO2023079957A1 JP 2022564208 A JP2022564208 A JP 2022564208A JP 2022564208 A JP2022564208 A JP 2022564208A JP WO2023079957 A1 JPWO2023079957 A1 JP WO2023079957A1
 - Authority
 - JP
 - Japan
 - Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
 - Pending
 
Links
Classifications
- 
        
- H—ELECTRICITY
 - H01—ELECTRIC ELEMENTS
 - H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
 - H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
 - H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
 - H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
 - H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
 - H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
 - H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
 
 - 
        
- H—ELECTRICITY
 - H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
 - H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
 - H10F71/00—Manufacture or treatment of devices covered by this subclass
 
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
 - Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
 - Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
 - Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
 - Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
 
 
Landscapes
- Engineering & Computer Science (AREA)
 - Physics & Mathematics (AREA)
 - Condensed Matter Physics & Semiconductors (AREA)
 - General Physics & Mathematics (AREA)
 - Manufacturing & Machinery (AREA)
 - Computer Hardware Design (AREA)
 - Microelectronics & Electronic Packaging (AREA)
 - Power Engineering (AREA)
 - Photovoltaic Devices (AREA)
 
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title | 
|---|---|---|---|
| JP2021180761 | 2021-11-05 | ||
| PCT/JP2022/038911 WO2023079957A1 (ja) | 2021-11-05 | 2022-10-19 | p型不純物拡散組成物、それを用いた太陽電池の製造方法 | 
Publications (1)
| Publication Number | Publication Date | 
|---|---|
| JPWO2023079957A1 true JPWO2023079957A1 (forum.php) | 2023-05-11 | 
Family
ID=86240949
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date | 
|---|---|---|---|
| JP2022564208A Pending JPWO2023079957A1 (forum.php) | 2021-11-05 | 2022-10-19 | 
Country Status (3)
| Country | Link | 
|---|---|
| JP (1) | JPWO2023079957A1 (forum.php) | 
| CN (1) | CN118202443A (forum.php) | 
| WO (1) | WO2023079957A1 (forum.php) | 
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title | 
|---|---|---|---|---|
| BE548647A (forum.php) * | 1955-06-28 | |||
| AU2010279659A1 (en) * | 2009-08-04 | 2012-03-01 | Precursor Energetics, Inc. | Methods for photovoltaic absorbers with controlled stoichiometry | 
| JP2012234990A (ja) * | 2011-05-02 | 2012-11-29 | Hitachi Chem Co Ltd | p型拡散層形成組成物、p型拡散層の製造方法、及び太陽電池素子の製造方法 | 
| EP2819149A4 (en) * | 2012-02-23 | 2015-11-25 | Hitachi Chemical Co Ltd | COMPOSITION FOR FORMING AN N-LEADING DIFFUSION LAYER, METHOD FOR PRODUCING A SEMICONDUCTOR SUBSTRATE WITH AN N-LEADING DIFFUSION LAYER, AND METHOD FOR PRODUCING A SOLAR CELL ELEMENT | 
| JP2018174276A (ja) * | 2017-03-31 | 2018-11-08 | 日立化成株式会社 | p型拡散層付き半導体基板の製造方法、p型拡散層付き半導体基板、太陽電池素子、及び太陽電池素子の製造方法 | 
| CN113169248B (zh) * | 2018-12-07 | 2024-10-01 | 东丽株式会社 | 半导体元件的制造方法和太阳能电池的制造方法 | 
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        2022
        
- 2022-10-19 CN CN202280070587.6A patent/CN118202443A/zh active Pending
 - 2022-10-19 WO PCT/JP2022/038911 patent/WO2023079957A1/ja not_active Ceased
 - 2022-10-19 JP JP2022564208A patent/JPWO2023079957A1/ja active Pending
 
 
Also Published As
| Publication number | Publication date | 
|---|---|
| CN118202443A (zh) | 2024-06-14 | 
| WO2023079957A1 (ja) | 2023-05-11 |