JPWO2023012930A1 - - Google Patents
Info
- Publication number
- JPWO2023012930A1 JPWO2023012930A1 JP2023539447A JP2023539447A JPWO2023012930A1 JP WO2023012930 A1 JPWO2023012930 A1 JP WO2023012930A1 JP 2023539447 A JP2023539447 A JP 2023539447A JP 2023539447 A JP2023539447 A JP 2023539447A JP WO2023012930 A1 JPWO2023012930 A1 JP WO2023012930A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2021/028946 WO2023012930A1 (en) | 2021-08-04 | 2021-08-04 | Phase change material and phase change memory element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2023012930A1 true JPWO2023012930A1 (en) | 2023-02-09 |
Family
ID=85155424
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023539447A Pending JPWO2023012930A1 (en) | 2021-08-04 | 2021-08-04 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPWO2023012930A1 (en) |
| WO (1) | WO2023012930A1 (en) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4865248B2 (en) * | 2004-04-02 | 2012-02-01 | 株式会社半導体エネルギー研究所 | Semiconductor device |
| KR100609699B1 (en) * | 2004-07-15 | 2006-08-08 | 한국전자통신연구원 | 2-terminal semiconductor device using abrupt metal-insulator transition semiconductor material |
| KR100871880B1 (en) * | 2006-05-30 | 2008-12-03 | 삼성전자주식회사 | Method for reducing a reset current for resetting a portion of a phase change material in a memory cell of a phase change memory device and the phase change memory device |
| WO2015072228A1 (en) * | 2013-11-15 | 2015-05-21 | 独立行政法人産業技術総合研究所 | Spin electronic memory, information recording method and information reproducing method |
| JP6086097B2 (en) * | 2014-06-17 | 2017-03-01 | 国立大学法人東北大学 | Multistage phase change material and multilevel recording phase change memory device |
| JP7097599B2 (en) * | 2018-02-28 | 2022-07-08 | 国立大学法人東北大学 | Phase change material and phase change type memory element using phase change material |
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2021
- 2021-08-04 WO PCT/JP2021/028946 patent/WO2023012930A1/en active Application Filing
- 2021-08-04 JP JP2023539447A patent/JPWO2023012930A1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023012930A1 (en) | 2023-02-09 |